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本文采用离子色谱仪,建立了一种准确测定水泥浆混合水中氯离子含量的测定方法。样品的前处理条件是:在碱性介质中高温焙烧法除去样品中带色有机物,以消除其对色谱柱的污染和对分析数据准确度的干扰,再用热水浸取灰化物,经过滤、定容后制备成待测溶液。最后采用离子色谱法测定水泥浆混合水中氯离子含量。在最佳实验条件下,方法的检出限为0.01mg/L,在1.0~40.0mg/L浓度范围内具有良好的线性关系,相关系数为r2=0.9993。加标回收率均在98%~100%,相对标准偏差(RSD)是1.5~2.5%(n=6)。经实验表明,本方法能较准确地测定水泥浆混合水中氯离子含量。 相似文献
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长垣东部葡萄花油层为低水位期的河流三角洲沉积,属低孔低渗油层,经过多年的注水开发后,产量进入递减期,针对这种形势研究注水开发过程中油层动用特点显得尤其重要。本文利用检查井资料,真实了解油层水淹规律,认识和掌握在不同开发阶段、不同含水阶段的油层水淹特征,搞清了油层动用状况和剩余油分布特征,从宏观上定量地评价了东部葡萄花油层剩余油的分布,使油田能从整体上把握挖潜剩余潜力的方向,使开发决策有的放矢,为油田开发方案设计、井网调整和部署加密井提供科学依据。 相似文献
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采用离子色谱仪,建立了一种快捷测定黄原胶中丙酮酸含量的方法。以20 mmol/L KOH溶液为淋洗液,AS19分离柱(250 mm×4 mm)分离,电导检测器检测,柱温和检测器温度为30℃,进样量为10μL,流速为1.0 mL/min,峰面积定量。丙酮酸的检出限为0.01 mg/L,在2~15 mg/L范围内具有良好的线性关系(R2=0.999 6),加标回收率均在96%以上,相对标准偏差(RSD)为1.0%~1.2%。经实验表明,此方法简单、快速,可便捷地应用于黄原胶样品中丙酮酸含量的测定。 相似文献
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Chemical mechanical planarization(CMP) of amorphous Ge2Sb2Te5(a-GST) is investigated using two typical soft pads(politex REG and AT) in acidic slurry.After CMP,it is found that the removal rate(RR) of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance(Rs) measure shows the higher Rs of a-GST polishing can be gained after CMP using both pads and the high Rs is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction. 相似文献
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大庆外围油田萨葡油层加密井井位优选方法 总被引:1,自引:1,他引:0
针对大庆外围油田萨葡油层砂体分布零散,现井网水驱控制程度低,开发中后期剩余油分布零散等问题,在研究不同井网的剩余油分布类型及合理加密方式基础上,深入研究了以精细油藏描述成果为依据,以可调厚度为加密下限,以周围生产井采出程度和含水为参考的井位优选方法.应用这套方法指导大庆外围油田中高含水萨葡油层的加密调整,提高了井网加密效果和经济效益. 相似文献
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Non-spherical colloidal silica nanoparticle was prepared by a simple new method, and its particle size distribution and shape morphology were characterized by dynamic light scattering(DLS) and the Focus Ion Beam(FIB) system. This kind of novel colloidal silica particles can be well used in chemical mechanical polishing(CMP) of sapphire wafer surface. And the polishing test proves that non-spherical colloidal silica slurry shows much higher material removal rate(MRR) with higher coefficient of friction(COF) when compared to traditional large spherical colloidal silica slurry with particle size 80 nm by DLS. Besides, sapphire wafer polished by non-spherical abrasive also has a good surface roughness of 0.460 6 nm. Therefore, non-spherical colloidal silica has shown great potential in the CMP field because of its higher MRR and better surface roughness. 相似文献
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Silicon-on-insulator (SOI) materials have a number of inherent advantages over bulk silicon substrates owing to their high speed, low power complementary metal-oxide-semiconductor (CMOS) integrated circuits, such as immunity to radiation hardness, high speed, and high tem-perature tolerance [1]. Separation by implantation of oxygen (SIMOX), bonding and etch back (BESOI) and Smart-Cut are the leading technologies for SOI material fabrication. Transitional metal impurities such as Cu, F… 相似文献