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1.
Semiconductors - In this work, we discuss for the first time the principle of rotation in the constant electric field of a conducting particle with participation of the Lorentz force, which ensures... 相似文献
2.
Zienko S. I. Zhbanova V. L. 《Journal of Communications Technology and Electronics》2022,67(4):395-402
Journal of Communications Technology and Electronics - A quantitative comparison of the spectral characteristics of the human visual system and matrix photodetectors is carried out. Criteria for a... 相似文献
3.
Kuznetsov Yu. A. Markov M. A. Kravchenko I. N. Krasikov A. V. Bykova A. D. 《Refractories and Industrial Ceramics》2021,62(4):421-425
Refractories and Industrial Ceramics - The paper introduces a promising technology for utilizing a traditional scheme for implementing a flow-through micro-arc oxidation method to restore localized... 相似文献
4.
Shannon Lee Scott L. Carnahan Georgiy Akopov Philip Yox Lin-Lin Wang Aaron J. Rossini Kui Wu Kirill Kovnir 《Advanced functional materials》2021,31(16):2010293
Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi4P4 and IrSi3P3 are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and 29Si and 31P magic angle spinning NMR. In agreement with previous report RuSi4P4 crystallizes in NCS space group P1, while IrSi3P3 is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi4P4 and IrSi3P3 to be wide bandgap (Eg) semiconductors, Eg = 1.9 and 1.8 eV, respectively. RuSi4P4 and IrSi3P3 outperform the current state-of-the-art infrared SHG material, AgGaS2, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi4P4 and IrSi3P3 are promising candidates for longer wavelength NLO materials. 相似文献
5.
Seredin P. V. Radam Ali Obaid Goloshchapov D. L. Len’shin A. S. Buylov N. S. Barkov K. A. Nesterov D. N. Mizerov A. M. Timoshnev S. N. Nikitina E. V. Arsentyev I. N. Sharafidinov Sh. Kukushkin S. A. Kasatkin I. A. 《Semiconductors》2022,56(4):253-258
Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid... 相似文献
6.
Boltar K. O. Burlakov I. D. Iakovleva N. I. Vlasov P. V. Lazarev P. S. 《Journal of Communications Technology and Electronics》2022,67(9):1175-1184
Journal of Communications Technology and Electronics - In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of... 相似文献
7.
Automation and Remote Control - A linear-quadratic positional differential game of three persons is considered. Coefficient criteria are established under which there is no Nash equilibrium... 相似文献
8.
Blagoveshchenskii D. I. Kozlovskii V. N. Vasin S. A. 《Russian Engineering Research》2021,41(12):1255-1259
Russian Engineering Research - Digital tools for managing improvements in automobile production are developed. An operative tool provides warnings regarding the operational quality of the vehicles... 相似文献
9.
Zhuchkov V. I. Nazansky S. L. Frolkova A. K. Ganina K. D. 《Theoretical Foundations of Chemical Engineering》2021,55(4):786-791
Theoretical Foundations of Chemical Engineering - Using gas–liquid chromatography, the activity coefficients upon the infinite dilution of the components of the reaction mixture for obtaining... 相似文献
10.
Olga Yu Kurapova Sergey M. Shugurov Evgenia A. Vasil'eva Daniil A. Savelev Vladimir G. Konakov Sergey I. Lopatin 《Ceramics International》2021,47(8):11072-11079
Ceria-based solid solutions are important materials for high- and medium-temperature electrochemical applications. However, the stabilities of both binary and ternary ceria-based solid solutions are insufficient at elevated temperatures, which limits their application as solid electrolytes or SOFC cathodes. Data on the high-temperature stability of ceria-based ceramics are unavailable in the literature. In the present study, we report a thermodynamic stability investigation of Y2O3-CeO2 and Y2O3-ZrO2-CeO2 solid solutions. The thermal prehistories of binary and ternary systems were investigated using STA, XRD, and ESCA techniques. The vaporization processes were investigated in the temperature range of 1577–2227°С via the Knudsen effusion mass spectrometry technique. Using data on the component activity in solid-phase thermodynamic properties of Y2O3-CeO2 solid solutions, which is represented as the Gibbs energy, the excess Gibbs energy was calculated as a function of the ceria mol. %. It was shown that the reduction of Ce4+ to Ce3+ in Y2O3-CeO2 and Y2O3-ZrO2-CeO2 solid solutions corresponds to less-negative Gibbs energy compared to ZrO2-CeO2 solid solutions. 相似文献