Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer

Improvement in the time-zero dielectric breakdown (TZDB) endurance of metal-oxide-semiconductor (MOS) capacitor with stacking structure of Al/HfO₂/SiO₂/Si is demonstrated in this work. The misalignment of the conduction paths between two stacking layers is believed to be effective to increase the breakdown field of the devices. Meanwhile, the resistance of the dielectric after breakdown for device with stacking structure would be less than that of without stacking structure due to a higher breakdown field and larger breakdown power. In addition, the role of interfacial layer (IL) in the control of the interface trap density (D_it) and device reliability is also analyzed. Device with a thicker IL introduces a higher breakdown field and also a lower D_it. High-resolution transmission electron microscopy (HRTEM) of the samples with different IL thicknesses is provided to confirm that IL is needed for good interfacial property.     

Interfacial microstructures and properties of aluminum alloys/galvanized low-carbon steel under high-pressure torsion

A new composite processing technology characterized by hot-dip Zn–Al alloy process was developed to achieve a sound metallurgical bonding between Al–7 wt% Si alloy (or pure Al) castings and low-carbon steel inserts, and the variations of microstructure and property of the bonding zone were investigated under high-pressure torsion (HPT). During hot-dipping in a Zn–2.2 wt% Al alloy bath, a thick Al₅Fe₂Zn_x phase layer was formed on the steel surface and retarded the formation of Fe–Zn compound layers, resulting in the formation of a dispersed Al₃FeZn_x phase in zinc coating. During the composite casting process, complex interface reactions were observed for the Al–Fe–Si–Zn (or Al–Fe–Zn) phases formation in the interfacial bonding zone of Al–Si alloy (or Al)/galvanized steel reaction couple. In addition, the results show that the HPT process generates a number of cracks in the Al–Fe phase layers (consisting of Al₅Fe₂ and Al₃Fe phases) of the Al/aluminized steel interface. Unexpectedly, the Al/galvanized steel interface zone shows a good plastic property. Beside the Al/galvanized steel interface zone, the microhardnesses of both the interface zone and substrates increased after the HPT process.     

Microstructural investigation on mechanical behavior of soil-geosynthetic interface in direct shear test

Interface shear strength between soil and geosynthetics mainly depends on the mechanical and physical properties of soil, geosynthetics and the normal stress acting at the interface. This paper presents results of an extensive experimental investigation carried out on sand-geosynthetic interface using modified large direct shear box. The study focusses on the shearing mechanism at the sand-geosynthetic interface and the effect of different parameters on the shearing mechanism. Smooth HDPE geomembrane, nonwoven needle punched geotextile and two types of sand having different mean particle size, have been used in the present study. Microstructural investigation of deformed specimen through Field Emission Scanning Electron Microscope (FESEM) reveals the shearing mechanism which includes interlocking and fiber stretching for sand-geotextile while sliding, indentation and plowing for sand-geomembrane interface. The shearing mechanism for sand-geomembrane interface highly depends on the normal stress and degree of saturation of sand. The critical normal stress that demarcates the sliding and plowing mechanism for sand-geomembrane interface is different for dry and wet sand. The amount of scouring (or plowing) of the geomembrane surface reduces with increase in the mean particle size of sand. FESEM images revealed that the sand particles get adhered to the geotextile fibers for tests involving wet sands. The present microstructural study aided in understanding the shearing mechanism at sand-geosynthetic interface to a large extent.     

Soft x-ray reflectometry,hard x-ray photoelectron spectroscopy and transmission electron microscopy investigations of the internal structure of TiO2(Ti)/SiO2/Si stacks

Abstract

We developed a mathematical analysis method of reflectometry data and used it to characterize the internal structure of TiO₂/SiO₂/Si and Ti/SiO₂/Si stacks. Atomic concentration profiles of all the chemical elements composing the samples were reconstructed from the analysis of the reflectivity curves measured versus the incidence angle at different soft x-ray reflection (SXR) photon energies. The results were confirmed by the conventional techniques of hard x-ray photoelectron spectroscopy (HXPES) and high-resolution transmission electron microscopy (HRTEM). The depth variation of the chemical composition, thicknesses and densities of individual layers extracted from SXR and HXPES measurements are in close agreement and correlate well with the HRTEM images.     

Enhanced the photocatalytic activity of B–C–N–TiO2 under visible light:Synergistic effect of element doping and Z-scheme interface heterojunction constructed with Ag nanoparticles

In order to enhance the photocatalytic activity of TiO₂ under visible light, Ag nanoparticles were introduced into tridoped B–C–N–TiO₂ (TT) catalyst by photoreduction deposition. Ag/B–C–N–TiO₂ (ATT) catalysts with the functions of reducing band gap and carrier recombination were prepared. At the same time, the effect of the amount of Ag on the photocatalytic performance of ATT catalyst was investigated. Through XRD, XPS, PL and other characterization methods, the (211)/(101)/Ag interface heterojunction mechanism similar to the traditional Z-scheme heterojunction was proposed. The intervention of Ag nanoparticles changed the P–N interface heterojunction between (211)/(101) to the (211)/(101)/Ag Z-scheme interface heterojunction. The results show that ATT catalyst exhibits the highest photocatalytic activity when the molar amount of Ag is 0.005% with the MB degradation rate of the ATT catalyst (0.01707 min^?1), which is 14.59 times of TiO₂ (0.00117 min^?1) and 2.02 times of TT (0.00847 min^?1). In addition, the four cycles efficiencies of ATT for MB degradation were all above 94.00%.This study reveals the possibility of construction of Z-scheme heterojunctions between precious metal nanoparticles and different interfaces of TiO₂, and provides a reference for the construction of Z-scheme interface heterojunctions.     

Interface reaction between alloys and submerged entry nozzle controlled by an electric current pulse

To solve the limitations of clogging and erosion of the submerged entry nozzle (SEN) for the production of high-quality special steel, the chemical reactivity between different alloys and the SEN and the interface reaction between alloys and the SEN controlled by an electric current pulse (ECP) were examined in this study. Results revealed that the chemical reactivity between different alloys and the SEN is different. For example, the reactivity between rare-earth metal and the SEN was strong, while that between Al and the SEN was extremely weak. At the same time, some differences between the clogging and interface reaction by ECP control were observed. Typically, at the positive electrode of the SEN, when a stable and dense clogging layer is formed, the internal SEN was effectively protected. However, at the negative electrode of the SEN, the decarburization rate of the SEN was accelerated by ECP, probably leading to a vicious circle of accelerated clogging and erosion of the SEN. Therefore, in the future, issues of clogging, erosion, infiltration, and decarbonization between active alloys and the SEN in the casting process may be solved and regulated by using the positive electric field of ECP. Meanwhile, the gain effect of ECP also helped to promote the homogenization of molten steel.     

Hierarchical composite of biomass derived magnetic carbon framework and phytic acid doped polyanilne with prominent electromagnetic wave absorption capacity

To solve the electromagnetic pollution,herein,a CoFe₂O₄/C/PANI composite was developed by a green route,which was constructed with spinel of metal oxide,graphitized carbon and conductive polymer composites.Benefiting from the designable interfaces and increased dipoles,the microwave dielectric response capability can be boosted significantly and resulted in the enhanced microwave absorbing performance.As revealed by the reflection loss curve,the minimum reflection loss(RLmin) reached-51.81 dB at 12.4 GHz under a matched thickness of 2.57 mm.At 2.5 mm,the effective absorbing band covered 8.88 GHz,suggesting the desirable wideband feature.In our case,the method of utilization of a novel green way to fabricate multiple-component EM absorber can be a promising candidate for high-performance EM absorber.     

Understanding grain refining and anti Si-poisoning effect in Al-10Si/Al-5Nb-B system

Grain refinement is critical for fabricating high-quality Al-Si casting components in the application of automobile and aerospace industries,while the well-known Si-poisoning effect makes it difficult.Nbbased refiners offer an effective method to refine Al-Si casting alloys,but their anti Si-poisoning capability is far from being understood.In this work,the grain refining mechanism and the anti Si-poisoning effect in the Al-10 Si/Al-5 Nb-B system were systematically investigated by combining transmission electron microscope,first-principles calculations,and thermodynamic calculations.It is revealed that NbB₂provides the main nucleation site in the Al-10 Si ingot inoculated by 0.1 wt.%Nb Al-5 Nb-B refiner.The exposed Nb atoms on the(0001)NbB₂and(1-100)NbB₂surface can be substituted by Al to form(Al,Nb)B₂intermedia layers.In addition,a layer of NbAl₃-like compound(NbAl₃')can cover the surface of NbB₂with the orientation relation of(1-100)[11-20]NbB_2//(110)[110]NbAl₃'.Both of the(Al,Nb)B₂and NbAl₃'intermedia layers contribute to enhancing the nucleation potency of NbB₂particles.These discoveries provide fundamental insight to the grain refining mechanism of the Nb-B based refiners for Al-Si casting alloys and are expected to guide the future development of stronger refiners for Al-Si casting alloys.     

Thieno[2,3-b]indole-based organic dyes for dye-sensitized solar cells: Effect of π-linker on the performance of isolated dye and interface between dyes and TiO2

A series of novel D-π-A type organic dyes with different π-linker are theoretically designed and investigated for their potential applications in dye-sensitized solar cells (DSSCs). We mainly focused on the influence of the extension of π-linker on the overall efficiency. The discussions are classified into two aspects: one is the isolated dyes and the other is the dye-TiO₂ system. The calculated results indicate that the isolated dyes THI-2T-C, THI-4T-3C, and THI-6T-5C have the better overall efficiency. Further, the THI-4T-3C and THI-5T-4C have the acceptable performance if the dye-TiO₂ system is considered. Combination of the isolated and the adsorbed systems, the THI-4T-3C with the moderate π-linker is considered to be more suitable choice for thieno[2,3-b]indole-based dyes rather than the longest π-linker.     

Charge selectivity in polymer:Fullerene-based organic solar cells with a chemically linked polyethylenimine interlayer

The power conversion efficiency of solar cells can be optimized via an efficient charge collection by electrodes. In this study, a simple linear polyethylenimine (LPEI), which is an insulating polymer, was adopted as the cathode interfacial layer of poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM)-based bulk-heterojunction organic solar cells (OSCs) with a non-inverted configuration. All photovoltaic parameters of the OSCs were significantly enhanced by depositing LPEI onto the oxygen plasma-treated P3HT:PCBM active layers. The causes of performance enhancement in OSCs were studied. Results revealed that the microstructure and morphology of the P3HT:PCBM layer were almost unaffected by the oxygen plasma treatment and the subsequent LPEI deposition. The X-ray photoelectron spectra of the specimens demonstrated that with the aid of oxygen plasma treatment, the linked LPEI molecules formed a well-aligned dipole layer on top of the P3HT:PCBM layer through the bonding of nitrogen (N) with oxygen (O). The results from quantum chemical calculations showed that the LPEI molecule with an N–O bond had a larger dipole moment at an appropriate direction than that without an N–O bond. By contrast, the LPEI molecules can form a dipole layer with a random orientation in the absence of N–O bonds. The conductive atomic force microscopy images of the specimens showed that the well-aligned dipole layer could facilitate electron transfer and could block hole transfer from the P3HT:PCBM to the cathodes. The well-aligned and augmented interface dipoles improved the charge selectivity at the cathodes and the photovoltaic performance of the devices.