Ionoluminescence decay measured with single ions

A new ion beam analysis-based, single ion technique called the time to first photon has been developed to measure the decay of the luminescence signal of phosphors. Such measurements are currently needed to study luminescence decay mechanisms following high-density excitations and to identify strongly luminescent phosphor coatings with short lifetimes for ion photon emission microscopy (IPEM). The samples for this technique consist of thin phosphor layers placed or coated on the surface of PIN diodes. Single ions from an accelerator strike this sample and simultaneously create ion beam induced luminescence (IBIL) from the phosphor that is measured by a single-photon-detector, and an ion beam induced charge collection (IBICC) signal in the PIN diode. In this case, the IBICC signal provides the start pulse and the IBIL signal the stop pulse to a time to amplitude converter. It is straightforward to show that this approach also measures a signal proportional to activity versus time with an accuracy of 5% as long as the number of detected photons per ion is less than 0.1, which usually requires the use of absorbers for the IBIL detector or electronic discrimination for the IBIL signals. Details of the new analysis are given together with examples of luminescence decay measurements of several ceramic phosphors being considered to coat IPEM samples. IPEM is currently being developed at Sandia National Laboratory (SNL), the University of North Texas in Denton, and the Universities and INFN of Padova and Torino.     

Accurate depth profiling through energy-dependent pulse height deficit compensation in gas ionization detectors

The impact of the pulse height deficit effect in gas ionization detectors on the accurate extraction of depth information from heavy ion elastic recoil detection spectra has been investigated. Thin GaN films and Ge_xSi_1−x/Si heterostructures have been analyzed with a 200 MeV ¹⁹⁷Au beam. Employing an empirical parameterisation of the pulse height deficit, a global energy calibration of the detector can be achieved. Energy spectra have been compared, calibrated with either a constant or a full energy-dependent compensation for the deficit. A constant compensation results in significant distortion of the extracted depth profile for heavier ions, whereas an energy-dependent compensation yields true concentration–depth profiles.     

CHARACTERIZATION OF Si_(1-x-y)Ge_xC_y FILMS GROWN BY ION IMPLANTATION AND SUBSEQUENT SOLID PHASE EPITAXY

Si1-x-yGexCy ternary alloy films were grown on monocrystalline silicon substrates by C ion implantation and subsequent solid phase epitaxy (SPE). Two-step anneal-ing technique was employed in the SPE. The structure and electrical properties of the alloy films were determined using Fourier transform infrared spectroscopy and van der Pauw Hall measurements, respectively. With the optimization of two-step anneal-ing technique for the implanted Si1-x-yGexCy layers, a certain amount of C atoms occupied substitutional sites and no SiC was formed.     

Ion implantation doping of OMCVD grown GaN

Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have indicated a redistribution in the measured profiles of Mg due to annealing.     

GaAs亚微米自对准工艺技术研究

总结了在５０ｍｍＧａＡｓ圆片上实现自对准介质膜隔离等平面工艺技术的研究，着重描述了离子注入、自对准亚微米难熔栅制备、钝化介质膜生长、干法刻蚀、电阻和电容制备等关键工艺的研究结果。这套工艺的均匀性、重复性好，在５０ｍｍＧａＡｓ圆片上获得了满意的成品率。采用这套工艺已成功地研制出多种性能良好的ＧａＡｓＩＣ和ＧａＡｓ功率ＭＥＳＦＥＴ，证明国家自然科学基金委员会这一重大课题的选择对发展我国ＧａＡｓＩＣ确实具有重大意义。     

硅片和硅器件工艺中的背面损伤吸除技术

本文介绍了硅片背面的三种主要损伤吸除技术：机械损伤、激光辐照和离子注入技术。对这三种吸除技术的机理、工艺条件、应用情况和近来进展，作了详细的评述。     

不同剂量BF^＋2注入多晶硅栅氟迁移特性的二次离子质谱分析

借助ＳＩＭＳ技术，系统地分析了８０ＫｅＶ，２．５×１０１４、５×１０１４、１×１０１５、２×１０１５和３×１０１５ｃｍ－２ＢＦ＋２注入多晶硅栅在９００℃、３０ｍｉｎ热退火条件下，氟在多晶硅栅中的分布剖面，并对氟在多晶硅和二氧化硅中的迁移特性进行了深入讨论。     

Studies on the corrosion behavior of cerium-implanted zircaloy-4 with GAXRD

In order to study the influence of cerium ion implantation on the aqueous corrosion behavior of zircaloy-4, specimens were implanted by cerium ions with a fluence range from 1×10¹⁶ to 1×10¹⁷ ions/cm² at maximum 150°C, using MEVVA source at an extracted voltage of 40 kV. The valence and elements penetration distribution of the surface layer were analyzed by X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES) respectively. Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the cerium ion implantation in the oxide films. Three-sweep potentiodynamic polarization measurement was employed to value the aqueous corrosion resistance of zircaloy-4 in a 1 N H₂SO₄ solution. It was found that a significant improvement in the aqueous corrosion behavior of zircaloy-4 implanted with cerium ions compared with that of the as-received zircaloy-4. The improvement effect will declined with raising the implantation fluence. The bigger is the fluence, the less is the improvement. Finally, the mechanism of the corrosion behavior of the cerium-implanted zircaloy-4 is discussed.     

己二酸二乙酯合成新工艺的研究

本文以离子交换树脂作为液固相酯化反应的催化剂 ,甲苯作为带水剂 ,合成己二酸二乙酯。应用本法 ,酯化反应产率高达 78%。同时对影响产率的诸因素进行了考察 ,其最佳反应条件为 :酸醇摩尔比 1∶4 ,催化剂用量为酸质量的 2 5 % ,反应时间为 10小时 ,反应温度 86～ 87℃ ,催化剂重复使用 4次 ,未出现活性明显下降 ,此工艺操作简单 ,反应条件温和 ,产率高 ,具有显著的工业应用价值。