用于安全稳定控制的高压直流极闭锁判据

交直流并联运行电网中直流极闭锁后引起的安全稳定问题十分突出，如何正确判别直流极闭锁是安全稳定控制系统研究中的重要课题。采用数值仿真方法分析了直流极闭锁对电力系统稳定的影响，指出稳定控制装置必须正确、快速地判出不同形式的直流极闭锁。通过研究直流极闭锁的电气量特征以及直流控制保护系统的动作行为，提出了可靠的直流极闭锁综合判据，并进行了详细的阐述。通过介绍中国南方交直流混联电网安全稳定控制系统核心部分———高肇直流输电安全稳定控制系统，进一步论述了研究直流极闭锁判据及直流极闭锁后稳定控制的重要性。     

SiCf/SiC陶瓷复合材料的研究进展

SiCf/SiC陶瓷复合材料具有良好的力学性能、高温抗氧化性和化学稳定性，是航空航天和原子能等领域理想的新一代高温结构材料。本文概述了增强体SiCt的发展状况及存在的问题，对SiCt/SiC材料的制备工艺、界面相的研究状态、材料的损伤破坏机理和目前的应用研究进展做了综述，并分析了SiCf/SiC陶瓷复合材料的研究重点和发展前景。     

固体中光声拉曼效应的理论分析

从非线性波动方程出发，运用准平衡模型以及热弹理论，对固体样品中光声拉曼效应进行理论分析，导出了脉冲激光泵浦下光声拉曼信号的解析表达式，并总结分析了固体中光声拉曼效应的一些原理特性、实验问题和应用价值。     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Preparation of Pb(Zr0.52Ti484848)O3 thin films on silicon-on-insulator substrates by excimer laser deposition combined with rapid thermal annealing

In this paper we report the fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films on Si-on-Insulator (SOI) substrates with and without an electrode by pulsed excimer laser deposition combined with rapid thermal annealing. Based on the structural and interfacial characteristics analysis by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (XTEM) and automatic spreading resistance measurement (ASR), the film structure and orientation were revealed to be dependent on the annealing time and annealing temperature as well as deposition temperature. From RBS spectra and XTEM observation it is shown that the PZT thin films did not interact with the top silicon layers of SOI and that the composition of the film was similar to the target. The ASR measurements showed that the electrical properties of PZT/SOI as well as PZT/Pt/SOI were abrupt, and that the electrical properties of the SOI substrates were still good after the PZT growth.     

初论带状光纤缆结构设计

推导出了成叠带状光纤在松套管中余长的两个计算公式，此两公式是带状光纤缆结构设计需要用到的基本公式。此外，还对带状光纤缆结构设计作了初步讨论。     

双臂协调约束系统动力学问题探讨

本文讨论了双臂协调约束系统的动力学问题．文中系统地描述了该系统的适应于计算机程序化的建模方法；推导了系统的动力学方程，并给出了用约束矩阵的正交补矩阵处理系统所受协调约束的方法；编制了相应的计算机辅助分析程序ＤＲＣＲＣＳ，并用该程序对算例进行了动力学的数值分析。     

建立统计宏模型的新方法

本文介绍一个新的建立统计宏模型的系统，它采用新的方法，得到简化的二次多项式，这种形式便于优化处理，适用于容差设计。