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41.
This letter presents our investigation for the effect of symbol timing errors in orthogonal frequency-division multiple access (OFDMA) uplink systems. We express the symbol timing errors between users as the symbol timing misalignments with respect to the desired user. Then, we derive an explicit expression of the signal-to-noise ratio (SNR) as a function of the maximum value of the symbol timing misalignments. Analyses and simulation results show that, to achieve an SNR of 20 dB, the maximum value of the symbol timing misalignments must be less than the cyclic prefix duration plus 6.25% of the useful symbol duration. Based on the resulting SNR degradation, we evaluate the SNR gain with guard subcarriers in order to mitigate the effect of the symbol timing misalignments.  相似文献   
42.
A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band.  相似文献   
43.
Accidents in different complex sociotechnical systems are rarely compared using the same theoretical framework for risk management. We conducted a comparative analysis of two Canadian public health disasters involving drinking water distribution systems, the North Battleford Cryptosporidium parvum outbreak in April 2001 and the Walkerton E. coli outbreak in May 2000. Both accidents resulted from a complex interaction between all levels of a complex sociotechnical system. However, the low-level physical and individual factors differed in the two cases, whereas, the high-level governmental and regulatory factors tended to be the same. These findings may have implications for the design of public policies to minimize risk in complex sociotechnical systems.  相似文献   
44.
This paper describes some of the key issues associated with the patterning of metal electrodes of sub-micron (especially at the critical dimension (CD) of 0.15 μm) dynamic random access memory devices. Due to reactive ion etching lag, the Pt etch rate decreased drastically below the CD of 0.20 μm and thus K-th storage node electrode with the CD of 0.15 μm could not be fabricated using the Pt electrodes. Accordingly, we have proposed novel techniques to surmountly-the above difficulties. The Ru electrode cannot for the stack-type structure is introduced and alternative multischemes based on the introduction of the concave-type selfstructure upto using semi-Pt or Ru as an electrode material are outlined respectively.  相似文献   
45.
As packet cellular networks are expected to support multimedia services, the authors incorporate the multimedia QoS requirements into the design of a new scheduling algorithm. The proposed wireless-adaptive fair scheduling tries to allocate time slots for each user with fair share by considering the varying channel condition while reflecting the stream requirements and achieving high throughput.  相似文献   
46.
The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions  相似文献   
47.
A number of checkpointing and message logging algorithms have been proposed to support fault tolerance of mobile computing systems. However, little attention has been paid to the optimistic message logging scheme. Optimistic logging has a lower failure-free operation cost compared to other logging schemes. It also has a lower failure recovery cost compared to the checkpointing schemes. This paper presents an efficient scheme to implement optimistic logging for the mobile computing environment. In the proposed scheme, the task of logging is assigned to the mobile support station so that volatile logging can be utilized. In addition, to reduce the message overhead, the mobile support station takes care of dependency tracking and the potential dependency between mobile hosts is inferred from the dependency between mobile support stations. The performance of the proposed scheme is evaluated by an extensive simulation study. The results show that the proposed scheme requires a small failure-free overhead and the cost of unnecessary rollback caused by the imprecise dependency is adjustable by properly selecting the logging frequency.  相似文献   
48.
Tumor suppressor genes such as p53 contribute to the oncogenic process via loss-of-function mechanisms such as genetic mutation or complex formation with other cellular or viral proteins. p53 is mutated in approximately 50% of human tumors and has an important role in the genesis or progression of both colorectal and hepatocellular cancers. Colorectal cancer is leading cause of cancer mortality in the United States, whereas hepatocellular cancer is the leading worldwide cause of cancer death; the liver is a primary site of morbidity in both diseases. Because systemic tumor suppressor gene therapy is currently not feasible, we have chosen to develop a regional form of such therapy directed at primary or metastatic liver neoplasms. Gene replacement therapy with p53 is a promising new strategy to treat advanced human cancers.  相似文献   
49.
Multiple-gate SOI MOSFETs: device design guidelines   总被引:5,自引:0,他引:5  
This paper describes computer simulations of various SOI MOSFETs with double and triple-gate structures, as well as gate-all-around devices. The concept of a triple-gate device with sidewalls extending into the buried oxide (hereby called a "/spl Pi/-gate" or "Pi-gate" MOSFET) is introduced. The Pi-gate device is simple to manufacture and offers electrical characteristics similar to the much harder to fabricate gate-all-around MOSFET. To explore the optimum design space for four different gate structures, simulations were performed with four variable device parameters: gate length, channel width, doping concentration, and silicon film thickness. The efficiency of the different gate structures is shown to be dependent of these parameters. The simulation results indicate that the the Pi-gate device is a very promising candidate for future nanometer MOSFET applications.  相似文献   
50.
Structural evaluation of thermal stratification for PWR surge line   总被引:1,自引:0,他引:1  
Recent observations at operating plants and subsequent US NRC requirements have identified flow stratification in surge lines as a phenomenon that must be considered in the design basis of surge lines. To address these concerns, the stratified loading conditions were included in the design of YGN 3 and 4 surge line as a design basis transient and pipe temperature and displacement measurement were taken during YGN 3 pre-core hot functional testing to determine the degree of surge line flow stratification. The measured displacements and temperatures were extensively reviewed and evaluated in detail: (1) to verify the validity of the thermal hydraulic model used to predict the pipe top-to-bottom temperature differentials; (2) to analytically correlate measured surge line temperatures and displacements; and (3) to confirm the validity of the stratified flow analysis procedure. This paper shows that the stratified flow phenomenon is generic and therefore generic loadings can be developed and evaluated for the surge line analyses.  相似文献   
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