Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations

Si-waveguide-integrated lateral Ge p-i-n photodetectors using novel Si/SiGe buffer and two-step Ge-process are demonstrated for the first time. Comparative analysis between lateral Ge p-i-n and vertical p-Si/i-Ge/n-Ge p-i-n is made. Light is evanescently coupled from Si waveguide to the overlaying Ge- detector, achieving high responsivity of 1.16 A/W at 1550 nm with f_{3 dB} bandwidth of 3.4 GHz for lateral Ge p-i-n detector at 5 V reverse bias. In contrast, vertical p-Si/i-Ge/n-Ge p-i-n has lower responsivity of 0.29 A/W but higher bandwidth of 5.5 GHz at -5 V bias. The higher responsivity of lateral p-i-n detectors is attributed to smaller optical mode overlap with highly doped Ge region as in vertical p-i-n configuration.     

Dark-Current Suppression in Metal–Germanium–Metal Photodetectors Through Dopant-Segregation in NiGe—Schottky Barrier

We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium- metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (~300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400degC/600degC combined with a thin (~10 nm) low-temperature Si/Si_0.8 Ge_0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to ~10 ^-7 A at -1 V bias (width/spacing: 30/2.5 mum). Under normal incidence illumination at 1.55 mum, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under - 1 V bias is up to 6 GHz.     

Efficient exact k-flexible aggregate nearest neighbor search in road networks using the M-tree

The Journal of Supercomputing - This study proposes an efficient exact k-flexible aggregate nearest neighbor (k-FANN) search algorithm in road networks using the M-tree. The state-of-the-art...     

Facile preparation of ultra-low Pt loading graphene-immobilized electrode for methanol oxidation reaction

Pulse current electrodeposition (PCE) technique was used to prepare graphene-supported platinum nanoparticles (GN-PtNPs) electrodes for the methanol electro-oxidation reaction in acidic media. The influences of the PCE parameters (applied current density, concentration of the Pt precursor, and duty cycle) upon the as-prepared GN-PtNPs electrodes for the methanol oxidation reaction (MOR) in terms of catalytic activity and tolerance against poisoning were studied using the Taguchi design of experiment (DOE). The analysis of variance (ANOVA) and signal-to-noise (S/N) ratio analysis provided prediction of optimal electrodeposition conditions to yield GN-PtNPs electrode which give the best MOR performance. The values of confirmatory experiment were demonstrated close to the values predicted using the Taguchi method. Transmission electron microscopy images showed that the Pt crystallites in flower-like structure were deposited evenly on the surface of graphene sheet. The Pt crystallites were predominantly in a zero-valent, metallic Pt state based on the X-ray photoelectron spectroscopy analysis.     

Domain Engineering in ReS2 by Coupling Strain during Electrochemical Exfoliation

Chemical exfoliation has been used for the fast and large‐scale production of 2D nanosheets from graphene and transition metal dichalcogenides; however, it is rarely used for domain engineering of exfoliated nanosheets. Herein, it is found that the use of large sized molecular intercalants during electrochemical intercalation induce atomic row dislocation and parallel mirror twin boundaries (MTBs) on an otherwise pristine rhenium disulfide (ReS₂) crystal, such that the exfoliated flakes possess a parallel, multi‐domain structure. These domains can be distinguished under a polarized microscope owing to the intrinsic in‐plane optical dichroic properties of ReS₂, thereby affording a way to track the number of domains introduced versus the size of the molecular intercalant during electrochemical exfoliation. Ferromagnetism is detected on the intercalated sample using large sized molecular intercalants. Density function theory suggests that these may be due to the coupled effects of lattice strain and S vacancies in the MTBs.     

Surface Strain Redistribution on Structured Microfibers to Enhance Sensitivity of Fiber‐Shaped Stretchable Strain Sensors

Fiber‐shaped stretchable strain sensors with small testing areas can be directly woven into textiles. This paves the way for the design of integrated wearable devices capable of obtaining real‐time mechanical feedback for various applications. However, for a simple fiber that undergoes uniform strain distribution during deformation, it is still a big challenge to obtain high sensitivity. Herein, a new strategy, surface strain redistribution, is reported to significantly enhance the sensitivity of fiber‐shaped stretchable strain sensors. A new method of transient thermal curing is used to achieve the large‐scale fabrication of modified elastic microfibers with intrinsic microbeads. The proposed strategy is independent of the active materials utilized and can be universally applied for various active materials. The strategy used here will shift the vision of the sensitivity enhancement method from the active materials design to the mechanical design of the elastic substrate, and the proposed strategy can also be applied to nonfiber‐shaped stretchable strain sensors.     

Editable Supercapacitors with Customizable Stretchability Based on Mechanically Strengthened Ultralong MnO2 Nanowire Composite

Although some progress has been made on stretchable supercapacitors, traditional stretchable supercapacitors fabricated by predesigning structured electrodes for device assembling still lack the device‐level editability and programmability. To adapt to wearable electronics with arbitrary configurations, it is highly desirable to develop editable supercapacitors that can be directly transferred into desirable shapes and stretchability. In this work, editable supercapacitors for customizable shapes and stretchability using electrodes based on mechanically strengthened ultralong MnO₂ nanowire composites are developed. A supercapacitor edited with honeycomb‐like structure shows a specific capacitance of 227.2 mF cm^?2 and can be stretched up to 500% without degradation of electrochemical performance, which is superior to most of the state‐of‐the‐art stretchable supercapacitors. In addition, it maintains nearly 98% of the initial capacitance after 10 000 stretch‐and‐release cycles under 400% tensile strain. As a representative of concept for system integration, the editable supercapacitors are integrated with a strain sensor, and the system exhibits a stable sensing performance even under arm swing. Being highly stretchable, easily programmable, as well as connectable in series and parallel, an editable supercapacitor with customizable stretchability is promising to produce stylish energy storage devices to power various portable, stretchable, and wearable devices.     

Can Reconstructed Se-Deficient Line Defects in Monolayer VSe2 Induce Magnetism?

There have been several recent conflicting reports on the ferromagnetism of clean monolayer VSe₂. Herein, the controllable formation of 1D defect line patterns in vanadium diselenide (VSe₂) monolayers initiated by thermal annealing is presented. Using scanning tunneling microscopy and q-plus atomic force microscopy techniques, the 1D line features are determined to be 8-member-ring arrays, formed via a Se deficient reconstruction process. The reconstructed VSe₂ monolayer with Se-deficient line defects displays room-temperature ferromagnetism under X-ray magnetic circular dichroism and magnetic force microscopy, consistent with the density functional theory calculations. This study possibly resolves the controversy on whether ferromagnetism is intrinsic in monolayer VSe₂, and highlights the importance of controlling and understanding the atomic structures of surface defects in 2D crystals, which could play key roles in the material properties and hence potential device applications.