金属互连结构的电迁移仿真分析

针对集成电路中金属互连线的电迁移现象,应用有限元分析软件ABAQUS,对铝硅合金互连线的电迁移过程进行了电热耦合研究,分析了不同电流密度与电势梯度、热通量、互连线内部总能量之间的相互关系,比较了不同结构尺寸对铝互连线电迁移失效的影响规律.结果表明,在互连线的狭窄部位,电势梯度和热通量达到最大值并具有集中性;电势梯度和热通量与通电时间及电流密度均成正比例关系;随着通电时间的延长,互连线内部总能量的变化趋势为先急剧下降再上升并达到某一平衡值;随着铝互连线宽度的增加,互连线内部的热通量逐渐减小.对于文中分析的结构模型,当互连线宽度低于2μm后,互连线失效的概率将大幅度增加.     

铝硅合金互连线电迁移失效试验

随着微电子技术的发展,作为超大规模集成电路互连线的金属薄膜的截面积越来越小,其承受的电流密度急剧增加,电迁移引起的互连失效变得尤为突出.针对集成电路中金属互连线的电迁移现象,以Black方程为基础,对其进行了修正.并以铝硅合金互连线为研究对象,对其电迁移过程进行了详细的加速寿命试验研究,获取了修正后的Black方程中的相关参数,分析了不同环境温度、不同电流密度、不同初始电阻等因素对铝互连线电迁移的影响规律.结果表明,铝硅合金互连线的电迁移寿命与上述参数均成反比关系.     

电迁移诱发镀层锡须生长行为分析

分析了0.3×104 A/cm2恒定电流密度和四种不同加载时间（0,48,144和240 h）电迁移条件对6.5 μm厚镀锡层表面锡须生长行为的影响,以及不同电流密度对阴极裂纹宽度的影响.结果表明,电迁移加速了镀层表面锡须的形成与生长,随着电迁移时间的延长,锡须长度不断增加.此外,电迁移导致在阴极首先出现了圆形空洞,随后在两极均形成了圆形空洞,并且在阴极处还发现有微裂纹存在,随着电流密度增加,阴极裂纹宽度也随之增加,电流密度为0.5×104 A/cm2时,平均最大裂纹宽度约为9.2 μm.     

单脉冲模式下电参数对镁合金微弧氧化膜耐蚀性的影响

硅铝复合电解液体系中利用单脉冲工作模式在AZ9ID镁合金表面制备了一系列微弧氧化膜层.采用四因素三水平正交实验研究单脉冲工作模式下电流密度、正占空比、氧化时间和频率对膜层耐蚀性的影响.结果表明:各电参数对膜层耐蚀性的影响程度由高到低排列依次是氧化时间、正占空比、电流密度、频率;制备较优耐蚀性膜层的电参数为:电流密度22 A/dm2,正占空比40％,氧化时间12 min,频率500 Hz;在较优工艺方案下制得的试样与镁合金相比,其自腐蚀电位提高了36.4 mV,腐蚀电流密度下降了1个数量级.     

微量元素对无铅焊点电迁移性能的改善

电迁移现象已经成为电子组装焊技术中最受关注的问题之一.焊点在高电流密度下的服役可靠性与焊点钎料成分有关.通过对比分析五种SnAgCu基无铅焊点在高电流密度下的服役表现,分析了添加微量元素对于电迁移现象的影响规律.结果表明,焊球承受一定电流作用之后,阴极金属间化合物（IMC）分解,铜焊盘受侵蚀,阳极形成大量脆性化合物Cu6Sn5;根据IMC层的厚度变化,Sn3.0Ag0.5Cu的抗电迁移性能优于低银钎料;向低银钎料中加入微量元素Bi和Ni后,晶粒得到了明显的细化,界面IMC层较薄,其抗电迁移的能力得到了明显的改善.     

电阻加热金属丝材塑性变形电-热-机械响应分析

电阻加热金属丝材增材制造技术对空间设备的修复和制造具有重要意义，在电阻加热金属丝材熔化沉积成形过程中，金属熔体的塑性变形影响金属零件的成形形貌. 为了精确探究金属熔体的塑性变形，将不同的电流密度通过短路的金属丝材，通过高速摄像机观测金属丝材塑性变化，采用热像仪和电压电流采集系统分别采集了金属丝材熔化过程的温度变化和电信号变化. 数值分析金属丝材塑性变形的机电热响应状态. 结果表明，数值计算得出最大挠度是电流密度的线性函数，与试验结果一致，通过高密度电流的金属丝材会发生显着的塑性变形. 在高电流密度的电流的作用下，释放出大量的焦耳热会引起局部温度的显着升高，从而导致屈服应力的降低，由于电-热-机械相互作用的原因，容易在电子互连中引起塑性变形.     

基于多场耦合的电镦成形工艺有限元模拟

结合实际生产经验在DEFORM软件平台中建立电-热-结构多场耦合的电热镦粗有限元模型,并采用多组工艺参数进行模拟计算,分析不同电流密度和镦粗压力对成形尺寸、温度场和等效应变速率场的影响。结果表明:电镦初期,由于砧座与工件之间接触电阻的存在,温度迅速升高,之后通过工件自身电阻产热,温度基本趋于稳定;等效应变速率最大值存在于工件脖颈段;工件蒜头最大半径和最高温度随电流密度增大而增大;镦粗压力增大使得蒜头最大半径增大而工件最大温度下降。对电镦过程中产生的缺陷进行模拟分析,得到相对优化的工艺参数,模拟结果与试验结果吻合较好。     

Pd-AgNbO3光催化剂的合成及其光催化活性研究

研究了温度为150℃,电流密度为5.0×103A/cm2的条件下电迁移对Ni/Sn/Ni-P(Au)线性接头中界面反应的影响.结果表明电流方向对Ni-P层的消耗起着决定作用.当Ni-P层为阴极时,电迁移加速了Ni-P层的消耗,即随着电迁移时间的延长,Ni-P层的消耗显著增加;电迁移100 h后Ni-P层消耗了5.88 μm,电迁移200 h后Ni-P层消耗了13.46μm.在Sn/Ni-P的界面上形成了一层Ni2SnP化合物而没有观察到Ni3Sn4化合物的存在,多孔状的Ni3P层位于Ni2SnP化合物与Ni-P层之间.当Ni-P层为阳极时,在电迁移过程中并没有发现Ni-P层的明显消耗,在Sn/Ni-P的界面处生成层状的Ni3Sn4化合物,其厚度随着电迁移时间的延长而缓慢增加,电迁移200 h后Ni3Sn4层的厚度达到1.81 μm.     

铝电解槽阴极母线电热状态研究

系统研究了不同因素对铝电解槽母线电热状态的影响.研究表明,对于电流密度较低的铸造大母线,表面积大小对压降和母线温度影响很小,但环境温度对二者影响明显;母线横断面尺寸相同时,电流密度提高,压降加速升高;阴极软带压降和温度受电流密度和钢棒传热的共同影响;软带厚度越大,钢棒传热越起主导作用.     

电-热耦合作用下Cu/SAC305/Cu中IMC的生长及元素扩散

在一定温度及电流密度下对Cu/SAC305(Sn-3.0Ag-0.5Cu)/Cu焊点进行不同加载时间的电迁移时效试验。分析了电-热耦合作用下,焊点界面IMC的生长机理及界面近区元素扩散特征。结果表明:电-热耦合作用下阳极界面IMC(金属间化合物)层厚度变化与加载时间成抛物线关系;阴极界面IMC层形貌变化显著,其厚度随加载时间的延长呈现先增厚后减薄的变化特征;焊点界面近区元素扩散分为两个阶段:初始阶段由于焊点各部分元素浓度相差悬殊,浓度梯度引起的元素扩散起主导作用,促进两极界面IMC厚度增加;扩散到一定程度后界面近区元素浓度梯度相对减小,电子风力引起的元素扩散占主导部分,促进阴极IMC分解阳极IMC形成,导致阴极IMC层厚度减薄,阳极IMC层厚度逐渐增大。     

交流电作用下Au薄膜热疲劳失效行为的研究

本文研究了交流电致循环热应变作用下200 nm厚Au薄膜的失效行为.结合实验结果和理论计算,确定了交流电作用下6μm宽Au薄膜导线上的温度分布,并由此确定了Au互连线在交流电作用下达到稳定状态后的循环热应变范围.结果表明,应变范围△ε≤0.35%,经过5×10~6cyc热循环后,Au互连线中的晶粒出现不同程度的增长,晶界损伤导致Au互连线的最终失效.对Au薄膜热疲劳、机械疲劳失效行为及其机制进行了分析.     

Current density redistribution from no current crowding to current crowding in Pb-free solder joints with an extremely thick Cu layer

In order to remove the effect of current crowding on electromigration, thick Cu under-bump metallization has been widely adopted in the electronics industry. Three-dimensional (3-D) integrated circuits, using through Si via Cu column interconnects, is being developed, and it seems that current crowding may not be a reliability issue. However, statistical experiments and 3-D finite element simulation indicate that there is a transition from no current crowding to current crowding, caused by void growth at the cathode. An analysis of the electromigration-induced failure mechanism in solder joints having a very thick Cu layer is presented. It is a unique failure mechanism, different from that in flip chip technology. Moreover, the study of marker displacement shows two different stages of drift velocity, which clearly demonstrates the back-stress effect and the development of compressive stress.     

Electromigration in solder joints and solder lines

Electromigration may affect the reliability of flip-chip solder joints. Eutectic solder is a two-phase alloy, so its electromigration behavior is different from that in aluminum or copper interconnects. In addition, a flipchip solder joint has a built-in currentcrowding configuration to enhance electromigration failure. To better understand electromigration in SnPb and lead-free solder alloys, the authors prepared solder lines in v-grooves etched on Si (001). This article discusses the results of those tests and compares the electromigration failure modes of eutectic SnPb and SnAgCu flip-chip solder joints along with the mean-timeto-failure.     

结构变化对Cu/Sn-58Bi/Cu微焊点电迁移行为和组织演变的影响

利用SEM观察、聚焦离子束(FIB)微区分析和有限元模拟对比研究了直角型和线型Cu/Sn-58Bi/Cu微焊点在高电流密度下(1.5×10~4A/cm~2)的电迁移行为,从原子扩散距离和微区域电阻变化及阴阳极物相变化的角度研究了焊点结构变化对电迁移影响的机理.结果表明,2种焊点通电112和224 h后均发生了Bi向阳极迁移并聚集及Sn在阴极富集的现象;直角型焊点阳极由于Bi聚集后膨胀而产生压应力进而导致小丘状凸起和微裂纹出现,而阴极存在拉应力引发凹陷和微裂纹,且沿界面呈非均匀变化.微区组织分析表明,电迁移作用下焊点内部Bi原子的扩散速度大于Sn原子的扩散速度.观察分析和模拟结果还表明,具有结构不均匀性的直角型焊点中电子流易向电阻较小区域聚集而产生电流拥挤效应,这是引起直角型焊点电迁移现象严重的根本原因.     

Intrinsic instability of electromigration induced mass transport in a two-dimensional conductor

The instability of electromigration induced mass transport within a thin-film conductor and its relation to catastrophic growth of voids in the later stage of electromigration failure are studied. To isolate intrinsic instability of mass transport from extrinsic defects, a void-free homogeneous conductor is examined in which surface and interface diffusion are neglected. Explicit conditions are derived for linearized instability and the effects of various diffusion mechanisms on instability are identified. It is found that thermomigration and electromigration provide the major driving forces for linear instability of uniform mass transport. In particular, thermomigration plays the dominant role in the onset of linear instability. The parameters which govern the onset of linear instability are the current density and temperature of the conductor. Linear instability can occur when Joule heating due to current crowding leads to sufficiently high temperature rise. The results appear to provide new insight into the understanding of some experiments where catastrophic void growth was observed in the later stage of electromigration failure when the amount of mass loss and temperature rise were sufficiently high.     

Electromigration induced microstructure evolution and damage in asymmetric Cu/Sn-58Bi/Cu solder interconnect under current stressing

The electromigration induced microstructure evolution and damage in asymmetric Cu/Sn-58Bi/Cu solder interconnects were investigated by in-situ SEM observation, focused ion beam (FIB) microanalysis and finite element (FE) simulation. The SEM results show that the electromigration-induced local degradation of microstructures, i.e., segregation of Bi-rich phase and formation of microcracks, in the asymmetric solder interconnects is much severer than that in the symmetrical ones. FIB-SEM microanalysis reveals that the microregional heterogeneity in electrical resistance along different electron flowing paths is the key factor leading to non-uniform current distribution and the resultant electromigration damage. Theoretical analysis and FE simulation results manifest that the current crowding easily occurs at the local part with smaller resistance in an asymmetric solder interconnect. All results indicate that the asymmetric shape of the solder interconnect brings about the difference of the electrical resistance between the different microregions and further results in the severe electromigration damage.     

Effect of Solder Thickness on Electromigration Behavior in Eutectic SnPb Solder Reaction Couples

The trend of miniaturization of electronic products induced the shrinking dimension of interconnects in the chip. When those interconnects are subjected to high current density (usually 10³ to 10⁴ A/cm²), electromigration (EM) could affect the reliability of the chip which would ultimately break the circuit. In this study, eutectic SnPb solders with thickness of 280, 128, and 50 μm were investigated under high current density (10⁴ A/cm²) and high ambient temperature (120 °C). The EM-induced surface undulations were more prominent at the shorter thickness, demonstrating that the diffusion of metal atoms/ions was controlled by the actual temperature in the bulk solder instead of the back stress. Bamboo groove features were observed on the surface of solder extrusion at the anode side for the three solder thickness, which indicated the metal atoms/ions that migrated parallel to the direction of flow of electrons.