铝硅合金互连线电迁移失效试验

随着微电子技术的发展,作为超大规模集成电路互连线的金属薄膜的截面积越来越小,其承受的电流密度急剧增加,电迁移引起的互连失效变得尤为突出.针对集成电路中金属互连线的电迁移现象,以Black方程为基础,对其进行了修正.并以铝硅合金互连线为研究对象,对其电迁移过程进行了详细的加速寿命试验研究,获取了修正后的Black方程中的相关参数,分析了不同环境温度、不同电流密度、不同初始电阻等因素对铝互连线电迁移的影响规律.结果表明,铝硅合金互连线的电迁移寿命与上述参数均成反比关系.

Electromigration failure of Al-Si interconnects

With development of microelectronics technology, the cross-sectional area of metal film used in very large scale integrated circuit interconnects are getting smaller and smaller, causing a sharp increase in its exposure of current density. Interconnects failure induced by electromigration has become particularly prominent. In accordance with the electromigration of metal interconnects in integrated circuits, the Black equation was modified. The electromigration of Al-Si interconnects was investigated by accelerated life time test. The relevant parameters of modified Black equation were obtained. The influence of test temperature, current density, initial resistance on the electromigration of Al-Si interconnects were analyzed. The results indicate that the electromigration life of Al-Si interconnects is inversely proportional to those parameters.