五氧化二钽薄膜的制备及其I—U特性

本文利用脉冲直流反应磁控溅射的方法制备了五氧化二钽(Ta205)薄膜，俄歇电子能谱仪测试了薄膜的成分含量，椭偏仪测试了Ta205薄膜的厚度和折射率，XRD分析了薄膜的晶体结构，并且分别研究了氧气含量、基底温度等成膜工艺对薄膜的影响。研究结果表明薄膜的成分主要是由氧气含量决定的。利用金属—绝缘体(介质膜)—金属(MIM)结构初步对Ta2O5薄膜进行了电学性能的测试：皮安电流电压源测试了薄膜的I—U特性，制备出的薄膜折射率在2．1-2．2，MIM的I—U特性曲线显示了较好的对称性和低的漏电流密度。     

热处理对MIM薄膜二极管Ta2O5绝缘膜微结构及其I-U特性的影响

制备了一种用于有源矩阵液晶显示、具有对称结构的MIM薄膜二极管 ,其中Ta2 O5膜采用溅射 /阳极氧化两步法工艺制成。对绝缘膜进行真空热处理 (一步热处理 )和经真空热处理后再进行大气热处理 (真空 /大气两步热处理 )。用原子力显微镜和透射电子显微镜分析了Ta2 O5膜的微结构 ,测试了MIM薄膜二极管的I U特性曲线。讨论了热处理对Ta2 O5绝缘膜微结构和MIM薄膜二极管I U特性的影响 ,并指出了MIM薄膜二极管I U特性和绝缘膜微结构之间的关系     

五氧化二钽薄膜的Ⅰ-Ⅴ特性

采用直流脉冲反应磁控溅射方法制备了高介电常数五氧化二钽(Ta2O5)薄膜.利用Ta/Ta2O5/Ta的MIM电容结构分析了Ta2O5的电学性能,研究了上电极面积对Ⅰ-Ⅴ特性的影响、Ⅰ-Ⅴ曲线的对称性和零点偏移以及薄膜缺陷和基底粗糙度对MIM电学性能的影响.结果表明,随着上电极面积增大,电容的漏电流密度增大,击穿场强减小.氧化钽薄膜中缺陷的存在和粗糙度增大容易引起漏电流增大,击穿强度降低.当上电极直径为1 mm时,MIM电容的性能最佳:击穿强度为2.22MV/cm,漏电流密度低于1×10-8A/cm2.     

阳极氧化法制备非晶Ta2O5及绝缘性能研究

利用阳极氧化法制备Ta2O5绝缘介质薄膜。扫描电子显微镜（SEM）、能谱分析（EDS）和X射线衍射仪（XRD）研究表明Ta2O5绝缘介质薄膜表面平整,致密,呈非晶态。电击穿场强测试系统研究利用Ta-Ta2O5-Al复合薄膜制备FED器件（MIM结构）的绝缘性,表明薄膜具有较高的耐击穿场强,约为2.3MV/cm,分析Ta2O5的导通机理,主要为肖特基效应和F-N效应。     

五氧化二钽薄膜的I—V特性

采用直流脉冲反应磁控溅射方法制备了高介电常数五氧化二钽(Ta_2O_5)薄膜。利用Ta/Ta_2O_5/Ta的MIM电容结构分析了Ta_2O_5的电学性能,研究了上电极面积对I-V特性的影响、I-V曲线的对称性和零点偏移以及薄膜缺陷和基底粗糙度对MIM电学性能的影响。结果表明,随着上电极面积增大,电容的漏电流密度增大,击穿场强减小。氧化钽薄膜中缺陷的存在和粗糙度增大容易引起漏电流增大,击穿强度降低。当上电极直径为1mm时,MIM电容的性能最佳:击穿强度为2.22MV/cm,漏电流密度低于1×10~(-8)A/cm~2。     

离子辅助蒸发(1-x)TiO2-(x)Ta2O5薄膜及其光学性能研究

采用离子辅助蒸发的方法，以不同配比的Ta2O5和TiO2混合物为初始膜料在K9玻璃上制备了TiO2-Ta2O5混合薄膜，并对其透射性能和光学常数进行研究。实验结果表明，薄膜在可见光范围内的平均透射率在82％以上，并随着Ta2O5含量的增加而增加；薄膜的折射率在1．80～2．07范围内变化（550nm）。对同-Ta2O5含量的薄膜来说，退火后TiO2薄膜和80TiO2—20Ta2O5薄膜的折射率较退火前提高，而90TiO2-10Ta2O5薄膜的折射率较退火前降低。     

氧化钽薄膜表面形貌和光学性能的研究

本文采用电子束蒸发配以Kaufman离子源产生的氧离子辅助沉积了Ta2O5薄膜,用原子力显微镜（AFM）表征了薄膜的表面形貌、表面粗糙度,探讨了Ta2O5薄膜在此工艺下的表面质量.用分光光度计测试了不同厚度下薄膜的透射率,计算出了其折射率.实验及分析结果表明：所制备的Ta2O5薄膜表面平整度高,是弱吸收薄膜,随薄膜厚度的增加短波截止波长向长波方向略有漂移;折射率随膜厚的变化不大,此制备工艺的可重复性强,制备薄膜性能稳定;薄膜表面粗糙度随膜厚的增加而增加,但是增加不大,所制备Ta2O5薄膜是理想光学薄膜;离子束的加入,使得薄膜表明形貌变化更加复杂,打破了热蒸发制备薄膜的柱状生长模式.     

Ta2O5薄膜的结构和电学性能研究

采用紫外光诱导热丝CVD沉积技术制备Ta2O5薄膜和Al/Ta2O2/SiMOS电容。利用XRD，AFM测试分析方法研究了紫外光源功率对Ta2O5薄膜结构的影响；通过C-V和，I-V测试对Ta2O5薄膜的介电常数，击穿场强和漏电流等电学性能进行了研究，结果表明：紫外光源的功率越大，Ta2O5薄膜的结晶性越好，介电常数越大，最大值为29，但紫外光功率对击穿场强和漏电流没有明显改善。     

TaOx离子导电薄膜的制备与性能

采用直流反应磁控溅射方法制备Ta2O5薄膜,并研究了其制备工艺;在Amoldussen法的基础上,采用了一种新的方法对Ta2O5薄膜离子导电性能进行了测试。结果表明,制备的Ta2O5,薄膜具有良好的离子导电性能。     

Ta_2O_5薄膜制备的研究现状及进展

Ta2O5薄膜具有很好的电学性能和光学性能,制备方法种类繁多,如溶胶-凝胶法(Sol-gel)、化学气相沉积法、电子束蒸发技术、溅射法、Ta层阳极氧化或热氧化法、离子辅助沉积法(IBAD)、原子层沉积法(ALD)等。评述了现有各种制备方法的优缺点,综述了Ta2O5薄膜各种方法制备的条件、薄膜的功能性质等,并评析了金属有机化合物为前驱体制备性能优良的Ta2O5薄膜的前景。     

How tantalum proceeds phase change on tantalum nitride underlayer with sequential Ar plasma treatment

Tantalum can change its phase from high resistive β-Ta to low resistive α-Ta phase on a TaN substrate with sequential Ar plasma treatment on the TaN layer surface prior to Ta deposition. The underlined mechanism of phase evolution is proposed based on systematic microstructure examination by high-resolution transmission electron microscopy. The images show that, with argon treatment, the upper part of the TaN film is transformed from amorphous-TaN to a composite phase of bcc-Ta(N) and amorphous-TaN mixture, which is also confirmed by X-ray diffraction patterns. The composite film composed of less nitrogen provides an ideal cubic matrix to confine the stable α-Ta phase to be grown. The α-Ta/bcc-Ta(N) film obtained by proper argon treatment results in film resistivity 10 times lower than the traditional Ta/TaN film.     

Effect of tantalum addition on microstructure and optical properties of TiN thin films

Titanium nitride thin films were deposited by direct current magnetron sputtering with various tantalum (Ta) concentrations (2, 4 and 8 at.%). The films were characterized using UV/VIS spectrophotometer. Atomic force microscopy (AFM), high resolution transmission electron microscope (HRTEM) were used to observe the microstructure and X-ray photoelectron spectroscopy was used to investigate the core level and the valence band of the films. It was found that the film with 2 at.% Ta is more reflective in the infrared range and more transparent in the visible region (selective behavior). The AFM showed smooth nanostructured surface for the film without Ta addition. It was found that the films with 2 at.% Ta presented relatively coarser grains with larger roughness and the reflectance are not controlled by the surface morphology. Also, this film presented higher electrical conductivity. HRTEM analysis showed that 2 at.% Ta addition gave rise to well crystallized films with elongated nanocrystallites in comparison with the films having 0, 4 and 8 at.% Ta contents.     

Ta/BDD薄膜材料电极在检测苯胺中的应用

制作钽衬底掺硼金刚石薄膜材料电极(Ta/BDD),并利用此薄膜材料电极为工作电极通过阴极溶出伏安法检测水中的苯胺.用热丝化学气相沉积(HFCVD)方法沉积Ta/BDD薄膜电极,扫描电镜和拉曼光谱表明电极具有良好的物理性质,循环扫描测试表明电极具有宽的电势窗口4.1V(-1.8～+2.3V vs SCE)和低背景电流,此特性对于电化学检测有着明显的优势.发现苯胺在氧化处理的Ta/BDD电极上有可逆的氧化还原峰,检测过程中未发生电极钝化现象.Ta/BDD电极在酸性介质中苯胺检测效果较明显,苯胺在1～40靘ol/L范围内浓度与溶出峰电流值有较好的线性关系.     

Tribological properties of Ta‐C‐N and Ta‐N thin films

The amorphous Ta‐C‐N and Ta‐N thin films were deposited using magnetron sputtering on silicon wafer under the similar condition. The as‐prepared thin films were characterized using scanning electron microscope (SEM), optical profiling system, nano‐indentation and friction test instruments. The results show that, compared with the Ta‐N thin film, the Ta‐C‐N thin film has higher nano‐hardness (9.45 GPa) and elastic modulus (225.71 GPa). Furthermore, the lower friction coefficient and wear rate of the Ta‐C‐N thin film are 0.238 and 5.94×10^–6 mm^–3· N^–1·m^–1, respectively. The wear surface of Ta‐C‐N thin film is smoother than that of the Ta‐N thin film. Therefore, it shows better anti‐wear properties.     

Investigation on the Initial Stage of Film Growth in Situ

The initial stage of Ag film growth on Cu(100). Ta(100) and Ta(110) single crystals as well as YBaCuO on Si single crystal covered by Pd was investigated in situ by means of LAS 600 surface analysis system with a sputtering source in sample preparation chamber. The results show that the initial state for Ag / Cu(100) film growth is typical S-K model, for Ag / Ta(100) and Ag / Ta(110)they have the same S-K characteristics, but due to the different surface energies of two crystalline planes. there is some difference for Ag / Ta (100) and Ag / Ta(110). YBCO sputterjng process is rather complex and Cu is the first element appearing in the film.     

缓冲层Ta对退火Co/Cu/Co薄膜微观结构和界面互扩散的影响

用直流磁控溅射法在Si/SiO₂基底上制备了Co/Cu/Co薄膜和加入缓冲层的Ta/Co/Cu/Co薄膜,用扫描电子显微镜、原子力显微镜、X射线衍射和俄歇电子能谱研究了薄膜的微观结构、表面形貌、织构和界面互扩散现象。结果表明:退火后薄膜中均存在{111}和{002}衍射峰,加入缓冲层Ta后,Co/Cu/Co薄膜的衍射峰强度明显增强,并存在较强的{111}纤维织构,薄膜表面孔洞及粗糙度大幅减小。退火后薄膜界面处产生互扩散现象,层状结构被破坏。缓冲层Ta提高了薄膜与基底材料间的润湿性,可有效缓解界面互扩散现象。     

氧离子束流密度对Ta2O5薄膜的影响

利用氧离子辅助电子束蒸发沉积Ta2O5薄膜,在dd定氧离子能量的条件下研究了氧离子束流密度对Ta2O5薄膜的微观结构、化学计量比和漏电流密度的影响.利用原子力显微镜和X射线衍射仪对Ta2O5薄膜微观结构进行表征研究,发现随着离子束流密度增大,沉积的Ta2O5薄膜致密性提高,粗糙度下降,但薄膜一直保持非晶态;同时能谱仪测试的结果表明,薄膜中O/Ta比例逐渐提高,直至呈现富氧状态.测量了不同薄膜样品的漏电流密度和击穿场强,发现随着离子束流密度增大,薄膜漏电流密度显著降低,击穿场强提高.总之,提高氧离子束流密度能够明显改善Ta2O5薄膜的微观结构和电学性能.     

Si衬底上Ta-N/Cu薄膜性能研究

对Si衬底上Ta-N/Cu薄膜进行了电学和热学分析，结果发现500℃以下薄膜电随几乎不变，600-690℃下的退火引起的电阻率降低是由于Ta-N电阻的热氧化和Cu熔化扩散引起的，而690℃以上的电阻率增加是由于Cu引线传输能力减弱所致，为0.18μm以下的超大规模集成电路中的Cu引线和电阻薄膜的制作提供了有益的借鉴。     

A Novel Method for Preparation of TaC Coating on C/C Composite Material

A new method for preparation of TaC coating on C/C composite material is reported. The amorphous ethylate tantalum jellied as the precursor is prepared and spread densely on the surface of the C/C composite material so as to form a multilayer film. In a graphitization furnace the multilayer film is transformed into TaC coating at various temperatures. Ethylate tantalum film is characterized by FT-IR (Fourier transform infrared) spectra, XRD (X-ray diffraction) and SEM (scanning electron microscopy) and TaC coating is characterized by XRD and SEM. At 1200℃the coating contained TaC and Ta2O5, and at above 1400℃only TaC is formed. The coating formed at 1600℃is a continuous stratum structure, and that formed at 1600℃is a porous net structure. Analysis on thermodynamics and formation mechanism of TaC indicates that, after ethylate tantalum is decomposed, Ta2O5 is first produced and then transformed into Ta2C, and newly formed Ta2C is transformed into TaC by the sufficient C at last.     

反应射频磁控溅射法制备HfTaO薄膜的热稳定性和光学性能

采用反应射频磁控溅射技术制备HfTaO薄膜,利用X射线衍射(XRD)分析了薄膜的微结构,通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了薄膜的折射率和禁带宽度,利用原子力显微镜观察了薄膜的表面形貌。结果表明,随着Ta掺入量(10%,26%,50%)的增加,HfTaO薄膜的结晶化温度分别为800、900、950℃,Ta掺入量继续增加到72%,经过950℃退火处理的HfTaO薄膜仍然保持非晶态,具有优良的热稳定性。AFM形貌分析显示非晶HfTaO薄膜表面非常平整。在550nm处薄膜折射率n随着Ta掺入量的增大而增大,n的变化区间为1.90～2.15。同时HfTaO薄膜的光学带隙Eg随着Ta掺入量的增大而逐渐减小,Eg的变化区间为4.15～5.29eV。