Effects of Al2O3–Y2O3/Yb2O3 additives on microstructures and mechanical properties of silicon nitride ceramics prepared by hot-pressing sintering

Silicon nitride (Si₃N₄) ceramics doped with two different sintering additive systems (Al₂O₃–Y₂O₃ and Al₂O₃–Yb₂O₃) were prepared by hot-pressing sintering at 1800℃ for 2 h and 30 MPa. The microstructures, nano-indentation test, and mechanical properties of the as-prepared Si₃N₄ ceramics were systematically investigated. The X-ray diffraction analyses of the as-prepared Si₃N₄ ceramics doped with the two sintering additives showed a large number of phase transformations of α-Si₃N₄ to β-Si₃N₄. Grain size distributions and aspect ratios as well as their effects on mechanical properties are presented in this study. The specimen doped with the Al₂O₃–Yb₂O₃ sintering additive has a larger aspect ratio and higher fracture toughness, while the Vickers hardness is relatively lower. It can be seen from the nano-indentation tests that the stronger the elastic deformation ability of the specimens, the higher the fracture toughness. At the same time, the mechanical properties are greatly enhanced by specific interlocking microstructures formed by the high aspect ratio β-Si₃N₄ grains. In addition, the density, relative density, and flexural strength of the as-prepared Si₃N₄ ceramics doped with Al₂O₃–Y₂O₃ were 3.25 g/cm³, 99.9%, and 1053 ± 53 MPa, respectively. When Al₂O₃–Yb₂O₃ additives were introduced, the above properties reached 3.33 g/cm³, 99.9%, and 1150 ± 106 MPa, respectively. It reveals that microstructure control and mechanical property optimization for Si₃N₄ ceramics are feasible by tailoring sintering additives.     

Fabrication and characterisation of porous silicon nitride ceramics using Yb2O3 as sintering additive

Porous Si₃N₄ ceramics were fabricated by liquid-phase sintering with a Yb₂O₃ sintering additive, and the microstructure and mechanical properties of the ceramics were investigated, as a function of porosity. Low densification was achieved using a lower Yb₂O₃ additive content. Fibrous β-Si₃N₄ grains developed in the porous microstructure, and the grain morphology and size were affected by different sintering conditions. A high porosity, ∼40–60%, with β-Si₃N₄ grain development, was obtained by adjusting the additive content. Superior mechanical properties, as well as strain tolerance, were obtained for porous ceramics with a microstructure of fine, fibrous grains of a bimodal size distribution.     

Nonlinear electrical behaviors and conductivity mechanisms in Ca1-xYbxCeNbWO8 ceramics

In this study, we investigated the nonlinear electrical behaviors and conductivity mechanisms of Ca_1-xYb_xCeNbWO₈ ceramics, which are prepared by the solid-state sintering method. CeO₂ and CeNbO₄ phases occur when the Yb³⁺ doping amount is greater than 0.1 in the CaCeNbWO₈-based ceramics. With the continuous incorporation of Yb³⁺, the grain size of the ceramics first decreases and then increases. The Ce³⁺ concentration in the ceramics decreases with increasing Yb³⁺ content. In the temperature range of 298.15 to 1073.15K, the relationship between ln ρ and 1000/T shows nonlinear electrical behaviors, which is attributed to the different conductivity mechanisms at high and low temperatures (ρ and T are resistivity and temperature, respectively). In the temperature range of 298.15 to 773.15K, the electrical conduction in Ca_1-xYb_xCeNbWO₈ ceramics follows the Efros-Shklovskii variable-range hopping (ES-VRH) conduction mechanism, thermal activation conduction (x < 0.2), and two-dimensional Mott VRH conduction mechanism (x = 0.2). Furthermore, the electrical conduction obeys the thermal activation conduction mechanism in the temperature range of 773.15 to 1073.15K. The activation energy for the electrical conduction is calculated based on the different hopping conduction mechanisms.     

Densification and Thermal Stability of Hot‐Pressed Si3N4–ZrB2 Ceramics

Densification and thermal stability of hot‐pressed Si₃N₄–ZrB₂ ceramics with and without additives were investigated in N₂ atmosphere. The addition of MgO–Yb₂O₃, MgO–Y₂O₃, and Al₂O₃–Yb₂O₃ resulted in significant increase in relative density of the ceramics hot‐pressed at 1500°C from 48.5% to 98.0%, 97.3%, and 95.6%, respectively. There was weak reaction of ZrB₂ with N₂ to form ZrN in hot‐pressed ceramics. Then heat treatment at 1550°C resulted in the further reactions to produce ZrN, ZrSi₂, and BN. The Si₃N₄–ZrB₂ ceramics with MgO–Yb₂O₃ showed much better thermal stability as compared to the ceramics with Al₂O₃–Yb₂O₃. The small difference in density led to the obvious difference in thermal stability. Therefore, Si₃N₄–ZrB₂ ceramics should be densified to full density, to obtain high thermal stability.     

Effect of post-sintering heat-treatment on thermal and mechanical properties of Si3N4 ceramics sintered with different additives

To improve the thermal conductivity of Si₃N₄ ceramics, elimination of grain-boundary glassy phase by post-sintering heat-treatment was examined. Si₃N₄ ceramics containing SiO₂–MgO–Y₂O₃-additives were sintered at 2123 K for 2 h under a nitrogen gas pressure of 1.0 MPa. After sintering, the SiO₂ and MgO could be eliminated from the ceramics by vaporization during post-sintering heat-treatment at 2223 K for 8 h under a nitrogen gas pressure of 1.0 MPa. Thermal conductivity of 3 mass% SiO₂, 3 mass% MgO and 1 mass% Y₂O₃-added Si₃N₄ ceramics increases from 44 to 89 Wm⁻¹ K⁻¹ by the decrease in glassy phase and lattice oxygen after the heat-treatment. Relatively higher fracture toughness (3.8 MPa m^1/2) and bending strength (675 MPa) with high hardness (19.2 GPa) after the heat-treatment were achieved in this specimen. Effects of heat-treatment on microstructure and chemical composition were also observed, and compared with those of Y₂O₃–SiO₂-added and Y₂O₃–Al₂O₃-added Si₃N₄ ceramics.     

Microstructural,electrical, and mechanical properties of conductive SiC ceramics fabricated by spark plasma sintering

Nitrogen (N)-doped conductive silicon carbide (SiC) of various electrical resistivity grades can satisfy diverse requirements in engineering applications. To understand the mechanisms that determine the electrical resistivity of N-doped conductive SiC ceramics during the fast spark plasma sintering (SPS) process, SiC ceramics were synthesized using SPS in an N₂ atmosphere with SiC powder and traditional Al₂O₃–Y₂O₃ additive as raw materials at a sintering temperature of 1850–2000°C for 1–10 min. The electrical resistivity was successfully varied over a wide range of 10⁻³–10¹ Ω cm by modifying the sintering conditions. The SPS-SiC ceramics consisted of mainly Y–Al–Si–O–C–N glass phase and N-doped SiC. The Y–Al–Si–O–C–N glass phase decomposed to an Si-rich phase and N-doped Y_xSi_yC_z at 2000°C. The Vickers hardness, elastic modulus, and fracture toughness of the SPS-SiC ceramics varied within the ranges of 14.35–25.12 GPa, 310.97–400.12 GPa, and 2.46–5.39 MPa m^1/2, respectively. The electrical resistivity of the obtained SPS-SiC ceramics was primarily determined by their carrier mobility.     

Densification behaviors and high-temperature characteristics of Si3N4 sintered bodies using Al2O3–Yb2O3 additives

The densification behaviors (include α–β transformation) and high-temperature characteristics (especially oxidation resistance and high-temperature strength properties) of Si₃N₄ sintered bodies using Al₂O₃–Yb₂O₃ based sintering additive are investigated.Densification and α–β transformation behaviors were investigated by varying the compositions of Al₂O₃–Yb₂O₃ additives. In terms of the influence of the Y₂O₃/Al₂O₃ ratio on densification behavior, a greater Yb₂O₃/Al₂O₃ ratio tends to inhibit densification. The α–β transformation tended to be delayed in sintered bodies with a small additive amount of 3.4 mass%. Compared with the transformation behaviors of the sintered bodies using Al₂O₃–Y₂O₃ additives, those using Al₂O₃–Yb₂O₃ additives exhibited a narrower temperature zone for α–β transformation, which attributed to the finer structure for the sintered body using Al₂O₃–Yb₂O₃ additives. This is affected by the difference in solubility of Si₃N₄ in the two kinds of glass phase.High room temperature strength of 900–1000 MPa was obtained for sintered bodies with a 10.0 mass% addition of additives, and this is considered to be due to the finer micro-structure. Precipitation of a Yb₄Si₂N₂O₇ phase at the grain boundary glass phase, as induced by crystallization processing, enables the improvement of 1300 °C strength to about 650–720 MPa. Crystallization processing resulted in a 30% reduction in the amount of weight change during oxidation (from 3.42 to 2.46 mg/cm²), demonstrating the effectiveness in improving oxidation resistance.     

Effects of different types of sintering additives and post-heat treatment (PHT) on the mechanical properties of SHS-fabricated Si3N4 ceramics

Porous silicon nitride (Si₃N₄) ceramics were fabricated by self-propagating high temperature synthesis (SHS) using Si, Si₃N₄ and sintering additive as raw materials. Effects of different types of sintering additives with varied ionic radius (La₂O₃, Sm₂O₃, Y₂O₃, and Lu₂O₃) on the phase compositions, development of Si₃N₄ grains and flexural strength (especially high-temperature flexural strength) were researched. Si₃N₄ ceramics doped with sintering additive of higher ionic radius had higher average aspect ratio, improved room-temperature flexural strength but degraded high-temperature flexural strength. Besides, post-heat treatment (PHT) was conducted to crystallize amorphous grain boundary phase thus improving the creep resistance and high-temperature flexural strength of SHS-fabricated Si₃N₄ ceramics. Excellent high-temperature flexural strength of 140 MPa~159 MPa and improved strength retention were achieved after PHT at 1400 °C.     

Micro-electrode discharge machining of TiN/Si3 N4 composites

Abstract

The feasibility of machining TiN/Si₃ N₄ composites by a micro-EDM method has been explored. Samples of composites containing two different sizes of TiN particles were prepared by hot pressing and the resulting materials characterised in terms of microstructure, strength, fracture toughness, and electrical resistivity. A low electrical resistivity of 1·25 × 10^-3Ω cm^-1 was obtained in a 40 vol.-% composition. Micropores of 700 μm depth and 70 μm dia. were successfully machined into TiN/Si₃ N₄ composites by the micro-EDM method. The results demonstrated the possibility of machining engineering ceramics by the micro-EDM method through the incorporation of conducting toughening phases. The size and content of TiN particles were found to have substantial effects on the strength, toughness, and electrical resistivity of the composites.     

Influence of rare-earth oxide additives on the oxidation resistance of Si3N4–SiC nanocomposites

The influence of different rare earth oxide additives (La₂O₃, Nd₂O₃, Sm₂O₃, Y₂O₃, Yb₂O₃ and Lu₂O₃) on the oxidation behaviour of carbon derived Si₃N₄–SiC micro-nanocomposites has been investigated. All investigated composites exhibited predominately parabolic oxidation behaviour indicated diffusion as the rate limiting mechanism. Except the Si₃N₄–SiC composite sintered with Lu₂O₃ the rate-limiting oxidation mechanism for all other materials was an outward diffusion of the additive cations along the grain boundary towards the surface. Such diffusion of cation has been strongly suppressed in the Lu-doped composite because of the beneficial effect of stable grain boundary phase and the presence of the SiC particles predominately located at the grain boundaries of Si₃N₄. Nanoparticles at the grain boundaries act as the obstacles for migration of cations of the additives resulting in superior oxidation resistance of Si₃N₄–SiC–Lu₂O₃ where the rate-limiting step is inward diffusion of oxygen through the oxide layer to the bulk ceramics.     

Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

Electrical resistivity of silicon nitride produced by various methods

It has been shown that the grain growth and amount of the glass phase influence the electrical resistivity of pressureless sintered and spark plasma sintered silicon nitride. Sintering additives strongly affect the impurity conductivity of pressureless sintered silicon nitride and slightly influence the intrinsic conductivity due to the longer sintering process as compared with the spark plasma sintering. It was demonstrated that Al₂O₃-Y₂O₃ lead to decrease in the electrical resistivity of SPSed silicon nitride due to increase in the band gap width as opposed to Al₂O₃-MgO. Effect of the sintering additive on the impurity conductivity is practically absent but there is a strong dependence of the sintering temperature for reported spark plasma sintered silicon nitride. However, intrinsic conductivity of SPSed silicon nitride is affected by both sintering temperature and sintering additive. It was also shown that electrical resistivity of produced ceramics is linearly depends on the content of β-Si₃N₄ and microhardness. Electrical resistivity of manufactured silicon nitride varied from 3.16·10⁹ to 1.73·10¹¹ Ω?m. It has been observed strong influence of the sintering additive and sintering temperature on the electrical properties of SPSed and pressureless sintered silicon nitride.     

Enhanced bending strength and microwave dielectric properties of Li2MgTi3O8 ceramics by adding Si3N4 reinforcing phase

In the 5G era, the dielectric materials used in microwave electronic components must have not only have good microwave dielectric characteristics but also excellent structural characteristics. Li₂MgTi₃O₈ (LMT) ceramics have excellent microwave dielectric properties; however, their low bending strength limits their further applications in the 5G era. In this work, the dielectric properties and bending strength of LMT ceramics were optimized by the addition of Si₃N₄ reinforcing phase using a solid-phase method, and the effects of Si₃N₄ addition on the sintering properties, microscopic structure, crystalline phase, dielectric properties and bending strength of ceramics were investigated. The X-ray diffraction pattern indicates that all ceramics exhibit spinel structure. Combined with the phenomenon of grain reduction in the SEM graph, it indicates that the addition of Si₃N₄ can inhibit the grain growth and achieve the purpose of fine-grain strengthening. The dispersion enhancement of second phase particles is also one of the reasons for the increase of bending strength. LMT ceramics doped with 0.5 wt% Si₃N₄ exhibited the maximum bending strength after sintering at 1050 °C for 4 h, which was 76.97% higher than that of pure LMT ceramics. In addition, the ceramics exhibited outstanding dielectric properties: a dielectric constant of 23.20, quality factor of 49344 GHz, and temperature coefficient of ?5.90 ppm/°C. The high bending strength and good microwave dielectric properties indicate that Si₃N₄-added LMT ceramics can be effectively applied in the 5G era.     

Grain boundary blocking effects in Sm/Yb-doped AlN ceramics

The effect of microstructural changes on the electrical and thermal properties of AlN ceramics is studied in terms of cation size and nature of sintering aids (i.e. Sm₂O₃ and Yb₂O₃) in AlN ceramics. It is revealed that the addition of Yb₂O₃ to Sm-bearing AlN ceramics results in 80 % reduction of thermal conductivity with an increase of the grain boundary resistivity that is one order of magnitude larger than for the sample without Yb₂O₃. Additionally, the grain boundary/grain resistivity ratio is significantly increased, when the Sm₂O₃ sintering aid is employed instead of Yb₂O₃, for which the secondary phases at the grain boundaries and the triple junctions are responsible for the increase in the electrical resistivity. The microstructural investigations confirm the tendency of the secondary phase to segregate at the triple junctions in Sm-containing AlN ceramics while it is grain boundaries that are favored as segregation site in the case of Yb.     

Effect of a new nonoxide additive,Y3Si2C2, on the thermal conductivity and mechanical properties of Si3N4 ceramics

Enhancement of the thermal conductivity of silicon nitride is usually achieved by sacrificing its mechanical properties (bending strength). In this study, β-Si₃N₄ ceramics were prepared using self-synthesized Y₃Si₂C₂ and MgO as sintering additives. It was found that the thermal conductivity of the Si₃N₄ ceramics was remarkably improved without sacrificing their mechanical properties. The microstructure and properties of the Si₃N₄ ceramics were analyzed and compared with those of the Y₂O₃-MgO additives. The addition of Y₃Si₂C₂ eliminated the inherent SiO₂ and introduced nitrogen to increase the N/O ratio of the grain-boundary phase, inducing Si₃N₄ grain growth, increasing Si₃N₄ grain contiguity, and reducing lattice oxygen content in Si₃N₄. Therefore, by replacing Y₂O₃ with Y₃Si₂C₂, the thermal conductivity of the Si₃N₄ ceramics was significantly increased by 31.5% from 85 to 111.8Wm⁻¹K⁻¹, but the bending strength only slightly decreased from 704 ± 63MPa to 669 ± 33MPa.     

Rapid fabrication of Si3N4 ceramics with gradient appearance and microstructure

Si₃N₄ ceramics with tailored gradient in color and microstructure were prepared by a rapid cost-effective one-step approach. The gradient microstructure was obtained by the manipulation of the dissolution-reprecipitation process, by controlling the sintering temperature and sintering additive content. In the Si₃N₄ ceramics, the β-phase content gradually changed from 84% to 11%. The Si₃N₄ ceramics exhibited white color on one side and showed a hardness of 19 GPa and fracture toughness of 7 MPa·m^1/2 and may be suitable for bio-implantation applications.     

Porous Si3N4/SiC Ceramics Prepared via Nitridation of Si Powder with SiC Addition

Porous Si₃N₄/SiC ceramics with high porosity were prepared via nitridation of Si powder, using SiC as the second phase and Y₂O₃ as sintering additive. With increasing SiC addition, porous Si₃N₄/SiC ceramics showed high porosity, low flexural strength, and decreased grain size. However, the sample with 20wt% SiC addition showed highest flexural strength and lowest porosity. Porous Si₃N₄/SiC ceramics with a porosity of 36–45% and a flexural strength of 107‐46MPa were obtained. The linear shrinkage of all porous Si₃N₄/SiC ceramics is below 0.42%. This study reveals that the nitridation route is a promising way to prepare porous Si₃N₄/SiC ceramics with favorable flexural strength, high porosity, and low linear shrinkage.     

Effects of Gd2O3 and Yb2O3 on the microstructure and performances of O'-Sialon/Si3N4 ceramics for concentrated solar power

O'-Sialon/Si₃N₄ composite ceramics for solar absorber were prepared in situ through pressureless sintering from Si₃N₄ and low pure Al₂O₃ with different rare-earth oxides (i.e., Yb₂O₃ and Gd₂O₃). This study investigates the effects of Yb₂O₃ and Gd₂O₃ on phase composition, microstructure, densification, oxidation resistance and solar absorptance. The results revealed that Yb₂O₃ and Gd₂O₃, which were applied as flux materials, significantly reduced the sintering temperature and improved the densification, oxidation resistance of the composite ceramics. Moreover, the introduction of the two sintering aids promoted the formation of O'-Sialon through the liquid-phase sintering mechanism. The samples doped with Gd₂O₃ exhibited more O'-Sialon content, lower porosity, and better oxidation resistance compared with those doped with Yb₂O₃. Especially, sample A2 (6 wt% Gd₂O₃ additional) sintered at 1600 °C exhibited the best comprehensive properties for 10.10% water absorption, 23.29% porosity, 105.57 MPa bending strength, 75.16% solar absorption. Dense oxide layers were generated on sample surfaces after oxidation at 1300 °C, which protected the ceramics samples from further oxidation. However, the two additives had characteristic reflection peaks in the ultraviolet–visible region (300–400 nm) and were also blamed for high reflectivity in the near–infrared region, which resulted in the decrease in absorption.     

The effect of BaTiO3 addition on the dielectric constant of Si3N4 ceramics

Si₃N₄ ceramics with different BaTiO₃ contents have been fabricated by pressureless sintering in a N₂ atmosphere at 1680°C for 2 h. Al₂O₃ and Nd₂O₃ were used as sintering additives to promote the densification of Si₃N₄ ceramics. The effect of BaTiO₃ addition on the densification, mechanical properties, phase compositions, microstructure, and dielectric properties of Si₃N₄ ceramics was investigated. The relative density and flexural strength of Si₃N₄ ceramics increased with the addition of BaTiO₃ up to 15 wt% and then decreased, while the dielectric constant increased continuously as the BaTiO₃ contents increased. The dielectric constant of Si₃N₄ ceramics can be tailored in the range from 8.42 to 12.96 by the addition of 5 wt%‐20 wt% BaTiO₃. Meanwhile, these Si₃N₄ ceramics all had flexural strength higher than 500 MPa.     

Low temperature sintering of Si3N4 ceramics by spark plasma sintering technique

Abstract

Abstract

Low temperature sintering of α‐Si₃N₄ matrix ceramics was developed in the present study using 4?wt‐%MgO together with Al₂O₃ or AlPO₄ as the sintering additives and spark plasma sintering technique. The results suggested that α‐Si₃N₄ ceramics could be densified at low sintering temperature by adjusting both the sintering temperature and sintering additive content. For low temperature sintered α‐Si₃N₄ ceramics, using MgO and Al₂O₃ as the sintering additives, the densification is not complete at a temperature lower than 1600°C, and the mechanical strength is <200?MPa. When MgO and AlPO₄ were used as the sintering additives, the increase in AlPO₄ content not only declines the sintering temperature but also promotes the mechanical property of the sintered Si₃N₄ ceramics. It was the AlPO₄ phosphate binder that played a significant role in low temperature sintering of Si₃N₄ ceramics.