Highly In‐Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide

Anisotropic 2D materials exhibit unique optical, electrical, and thermoelectric properties that open up possibilities for diverse angle‐dependent devices. However, the explored anisotropic 2D materials are very limited and the methods to identify the crystal orientations and to study the in‐plane anisotropy are in the initial stage. Here azimuth‐dependent reflectance difference microscopy (ADRDM), angle‐resolved Raman spectra, and electrical transport measurements are used to systematically characterize the influence of the anisotropic structure on in‐plane optical and electrical anisotropy of 2D GeAs, a novel group IV–V semiconductor. It is proved that ADRDM offers a way to quickly identify the crystal orientations and also to directly characterize the in‐plane optical anisotropy of layered GeAs. The anisotropic electrical transport behavior of few‐layer GeAs field‐effect transistors is further measured and the anisotropic ratio of the mobility is as high as 4.6, which is higher than the other 2D anisotropic materials such as black phosphorus. The dependence of the Raman intensity anisotropy on the sample thickness, excitation wavelength, and polarization configuration is investigated both experimentally and theoretically. These data will be useful for designing new high‐performance devices and the results suggest a general methodology for characterizing the in‐plane anisotropy of low‐symmetry 2D materials.     

Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2

Due to the novel optical and optoelectronic properties, 2D materials have received increasing interests for optoelectronics applications. Discovering new properties and functionalities of 2D materials is challenging yet promising. Here broadband polarization sensitive photodetectors based on few layer ReS₂ are demonstrated. The transistor based on few layer ReS₂ shows an n‐type behavior with the mobility of about 40 cm² V^?1 s^?1 and on/off ratio of 10⁵. The polarization dependence of photoresponse is ascribed to the unique anisotropic in‐plane crystal structure, consistent with the optical absorption anisotropy. The linear dichroic photodetection with a high photoresponsivity reported here demonstrates a route to exploit the intrinsic anisotropy of 2D materials and the possibility to open up new ways for the applications of 2D materials for light polarization detection.     

Ultrathin 2D GeSe2 Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy

As a layered p‐type semiconductor with a wide bandgap of 2.7 eV, GeSe₂ can compensate for the rarity of p‐type semiconductors, which are desired for the production of high‐integration logic circuits with low power consumption. Herein, ultrathin 2D single crystals of β‐GeSe₂ are produced using van der Waals epitaxy and halide assistance; each crystalline flake is ≈7 nm thick and shaped as a rhombus. The optical and electrical properties of the flakes are studied systematically, and the temperature‐dependent Raman spectra of the flakes reveal that the intensity of the Raman peaks decrease with increasing temperature. Low‐temperature electrical measurements suggest that the variable‐range hopping model is best for describing the electrical transport at 20–180 K; meanwhile, optical‐phonon‐assisted hopping can account for the transport behavior at 180–460 K. Impressively, the angle‐resolved polarized Raman measurements indicate strong in‐plane anisotropy of the rhombic GeSe₂ flake under a parallel polarization configuration, which may result from the low symmetry of the monoclinic crystal structure of GeSe₂. Furthermore, a photodetector based on a rhombic GeSe₂ flake is constructed and shown to exhibit a high responsivity of 2.5 A W^?1 and a fast response of ≈0.2 s.     

Highly In-Plane Anisotropic 2D PdSe2 for Polarized Photodetection with Orientation Selectivity

Polarized photodetection based on anisotropic two-dimensional materials display promising prospects for practical application in optical communication and optoelectronic fields. However, most of the reported polarized photodetection are limited by the lack of valid tunable strategy and low linear dichroism ratio. A peculiar noble metal dichalcogenide—PdSe₂ with a puckered pentagonal structure and abnormal linear dichroism conversion—potentially removes these restrictions and is demonstrated in this study. Herein, azimuth-dependent reflectance difference microscopy combined with anisotropic electrical transport measurements indicate strong in-plane anisotropic optical and electrical properties of two-dimensional PdSe₂. Remarkably, the typical polarization-resolved photodetection exhibits anisotropic photodetection characteristics with a dichroic ratio up to ≈1.8 at 532 nm and ≈2.2 at 369 nm, and their dominant polarization orientation differs by 90° corresponding to the a-axis and b-axis, respectively. The unique orientation selection behavior in polarization-dependent photodetection can be attributed to the intrinsic linear dichroism conversion. The results make 2D PdSe₂ a promising platform for investigating anisotropic structure–property correlations and integrated optical applications for novel polarization-sensitive photodetection.     

Polarization‐Sensitive Ultraviolet Photodetection of Anisotropic 2D GeS2

Polarization‐sensitive photodetection in the UV region is highly indispensable in many military and civilian applications. UV‐polarized photodetection usually relies on the use of wide bandgap semiconductors with 1D nanostructures requiring complicated nanofabrication processes. Although the emerging anisotropic 2D semiconductors shed light on the detection of polarization with a simple device architecture, bandgaps of such reported 2D semiconductors are too small to be applied for visible–blind UV‐polarized photodetection. Here, germanium disulfide (GeS₂), the widest bandgap (>3 eV) in the family of in‐plane anisotropic 2D semiconductors explored to date, is introduced as an ideal candidate for UV‐polarized photodetection. The structural, vibrational, and optical anisotropies of GeS₂ are systematically investigated from theory to experiment. GeS₂‐based photodetectors show a strong polarization‐dependent photoresponse in the UV region. GeS₂ with a wide bandgap and high in‐plane anisotropy not only enriches the family of anisotropic 2D semiconductors but also expands the polarized photodetection from the current visible and near‐infrared to the brand‐new UV region.     

二维材料在红外探测器中的应用最新进展（特邀）

二维材料,具有原子厚度,以其独特的物理、化学性质,吸引了广大研究人员的关注,成为了众多研究领域（如物理、材料、电子、光电子和化学等）的明星材料。因二维材料具有较高的载流子迁移率、强的光-物质相互作用、电/光学性质各向异性等,使其在光电子领域具有光明的应用前景。其中,窄带隙二维材料,如黑磷、黑磷砷等,在红外光电探测器中表现出巨大的应用潜力,成为了红外探测领域的新宠。文中将对二维材料在红外探测器中的应用,特别是光子型光电探测器的最新进展进行介绍。首先对二维材料的背景进行介绍;然后介绍表征光电探测器的关键参数;接着介绍二维材料在红外探测器中的最新进展,分别展示了单二维材料红外探测器、异质结红外探测器和光波导红外探测器方面的进展;最后对二维材料在红外探测器中的应用进行展望。     

Direct Polarimetric Image Sensor and Wide Spectral Response Based on Quasi-1D Sb2S3 Nanowire

Polarized photodetectors with wide spectral detection and ultra-fast photoresponses based on anisotropic semiconductors have potential applications in military and civilian fields and have been widely studied in recent years. The dual advantages of low-symmetry crystal structure and special electronic band-structure make Sb₂S₃ the perfect choice for polarized photodetection. In this work, the optical, vibrational, and optoelectronic anisotropy of the high-quality orthorhombic Sb₂S₃ nanowires are systematically investigated by experimental and theoretical studies. The metal-semiconductor-metal photodetectors based on a single Sb₂S₃ nanowire exhibit good polarization sensitivity in a broadband range from ultraviolet to near-infrared (360 to 1550 nm) and the obtained maximum dichroic ratio is 2.54 at 638 nm. The polarization-sensitive photocurrent mapping results show that the photocurrent is mainly derived from the Schottky junction at the interface between Au and Sb₂S₃. The effective separation of the photo-generated carriers near the Schottky junction gives a photodetector response time of 470 µs. The direct polarimetric imaging demonstrates that the gray value of the image obtained by the imaging system is sensitive to the object's polarized direction. This natural sensitivity of the Sb₂S₃-based photodetector to polarized objects makes it possible to image polarized objects directly as an image sensor.     

Progress,Challenges, and Opportunities for 2D Material Based Photodetectors

2D material based photodetectors have attracted many research projects due to their unique structures and excellent electronic and optoelectronic properties. These 2D materials, including semimetallic graphene, semiconducting black phosphorus, transition metal dichalcogenides, insulating hexagonal boron nitride, and their various heterostructures, show a wide distribution in bandgap values. To date, hundreds of photodetectors based on 2D materials have been reported. Here, a review of photodetectors based on 2D materials covering the detection spectrum from ultraviolet to infrared is presented. First, a brief insight into the detection mechanisms of 2D material photodetectors as well as introducing the figure‐of‐merits which are key factors for a reasonable comparison between different photodetectors is provided. Then, the recent progress on 2D material based photodetectors is reviewed. Particularly, the excellent performances such as broadband spectrum detection, ultrahigh photoresponsivity and sensitivity, fast response speed and high bandwidth, polarization‐sensitive detection are pointed out on the basis of the state‐of‐the‐art 2D photodetectors. Initial applications based on 2D material photodetectors are mentioned. Finally, an outlook is delivered, the challenges and future directions are discussed, and general advice for designing and realizing novel high‐performance photodetectors is given to provide a guideline for the future development of this fast‐developing field.     

Anisotropic polarization maintaining optical fiber ring resonators

Suppression of the polarization drift of optical fiber ring resonators is investigated both theoretically and experimentally by employing anisotropy in a polarization maintaining fiber ring. A general analytic expression for the transmission of the device is derived allowing the fiber modes to exhibit any combination of polarization crosstalk, differential loss or differential coupling. The analysis shows that a moderate level of ring anisotropy, such as that of 10 dB in line polarizer or polarization selective coupler, is sufficient to greatly suppress the drift of the eigenstates of polarization (ESOPs), finesse and resonant point, restoring the device's suitability for most practical applications. An inevitable consequence of introducing ring anisotropy is the loss of orthogonality of the ESOPs. This effect limits the anticipated benefit in high sensitivity applications. A practical anisotropic PMRR is demonstrated by inserting a thin film of nematic liquid crystal between the two halves of the polished coupler of the ring. This resonator demonstrates a polarization response immune to environmental perturbations     

Mo6S3Br6: An Anisotropic 2D Superatomic Semiconductor

Two‐dimensional (2D) van der Waals materials with in‐plane anisotropy are of great interest for directional transport of charge and energy, as exemplified by recent studies on black phosphorus and α‐phase molybdenum trioxide (α‐MO₃). Here, a layered van der Waals semiconductor with in‐plane anisotropy built upon the superatomic units of Mo₆S₃Br₆ is reported. This material possesses robust 2D characteristics with a direct gap of 1.64 eV, as determined by scanning tunneling spectroscopy and first‐principles calculations. Polarization‐dependent Raman spectroscopy measurement and density functional theory calculation reveal strong in‐plane anisotropy. These results suggest an effective strategy to explore anisotropic 2D electronic and optoelectronic properties from superatomic building blocks with multifunctionality, emergent properties, and hierarchical control.     

2D Materials Based on Main Group Element Compounds: Phases,Synthesis, Characterization,and Applications

2D materials based on main group element compounds have recently attracted significant attention because of their rich stoichiometric ratios and structure motifs. This review focuses on the phases in various 2D binary materials including III–VI, IV–VI, V–VI, III–V, IV–V, and V–V materials. Reducing 3D materials to 2D introduces confinement and surface effects as well as stabilizes unstable 3D phases in their 2D form. Their crystal structures, stability, preparation, and applications are summarized based on theoretical predictions and experimental explorations. Moreover, various properties of 2D materials, such as ferroelectric effect, anisotropic optical and electrical properties, ultralow thermal conductivity, and topological state are discussed. Finally, a few perspectives and an outlook are given to inspire readers toward exploring 2D materials with new phases and properties.     

激光偏振拉曼的CVD多晶石墨烯表征

石墨烯具有优异的物理化学性质,在MEMS器件、光电检测材料、柔性显示屏、新能源电池、复合材料等方面成为研究热点。目前大面积石墨烯制备主要依赖于化学气相沉积技术(chemical vapor deposition, CVD),但其生长的晶体质量直接影响到电化学特性和实际应用,因此需要一种快速而准确的表征方法。实验利用背向散射的偏振激光散射装置测量CVD生长的石墨烯拉曼光谱。通过分析实验获得的300 nm SiO2/Si基底上的单层、五层和十层左右的石墨烯角分辨偏振拉曼光谱,发现单层生长的石墨烯偏振特性与机械剥离单晶石墨烯一致;随着层数的增加,G峰偏振响应差异更加明显,表现出明显的椭圆特性;在不同石墨烯层数上的D峰也呈现出一定的偏振响应差异性。偏振拉曼测试结果表明目前CVD生长的缺陷和多晶特性与石墨烯层数呈现正相关特征。     

Realizing the Intrinsic Anisotropic Growth of 1T′ ReS2 on Selected Au(101) Substrate toward Large-Scale Single Crystal Fabrication

Low-symmetry 2D materials with strong in-plane anisotropy are ideal platforms for building multifunctional optoelectronic devices. However, the random orientations and easy formation of multidomain structures lead to the single-crystal synthesis of these materials remains a big challenge. Herein, for the first time, the orientation-controlled synthesis of ReS₂, a typical low-symmetry 2D material, is explored via interface engineering based on the strong interaction between the material and Au substrates with different symmetries. It is revealed that the lattice orientation and growth behavior of ReS₂ are closely relevant to the lattice symmetry of Au facets. Single crystal ReS₂ domains with two and even one orientations are acquired on the four-fold symmetry Au(001) facet and the two-fold symmetry Au(101) facet, respectively. Combined with density functional theory calculations, it is demonstrated that the synergy of ultra-strong ReS₂-Au interfacial coupling and reduction of symmetry of Au facet is critical to realizing its intrinsic anisotropic growth. Furthermore, great enhancement of electrical and photoelectrical performances are acquired on the well-aligned single crystal ReS₂ device. The progress achieved in this work provides significant guidance for the controllable synthesis of wafer-scale single crystals of low-symmetry 2D materials for their practical device applications.     

Enhanced optical polarization anisotropy in quantum wells under anisotropic tensile strain

Anisotropic in-plane strain in quantum wells leads to an optical polarization anisotropy that can be exploited in optoelectronic devices such as modulators. A theoretical model shows that the behavior of the polarization anisotropy with increasing strain anisotropy is radically different for quantum wells under anisotropic tensile and compressive strains of equal magnitude. This strikingly different behavior arises from the different valence-subband mixing that occurs in the cases of anisotropic tensile and compressive strain. Specifically, the mixing of the first heavy- and light-hole subbands that occurs only under anisotropic tensile strain is central to the polarization anisotropy.     

Hermite-Gauss beams in uniaxially anisotropic crystals

Propagation of Hermite-Gauss beams of any order along the optical axis of a uniaxially anisotropic crystal is investigated. Starting from a general approach for solving boundary value problems in anisotropic materials, closed-form expressions of the electromagnetic field are given for this fundamental class of beams. Any optical beam in an anisotropic crystal is the superposition of ordinary and extraordinary parts, propagating independently. By analyzing the expressions of the fields originated by an input Gaussian beam, the effects of the anisotropy on the diffraction properties of the ordinary and extraordinary beams have been elucidated     

Machine Vision Based on an Ultra-Wide Bandgap 2D Semiconductor AsSbO3

Facing the future development trend of miniaturization and intelligence of electronic devices, solar-blind photodetectors based on ultrawide-bandgap 2D semiconductors have the advantages of low dark current, and high signal-to-noise ratio, as well as the features of micro-nanometer miniaturization and multi-functionalization of 2D material devices, which have potential applications in the photoelectric sensor part of high-performance machine vision systems. This study reports a 2D oxide semiconductor, AsSbO₃, with an ultrawide bandgap (4.997 eV for monolayer and 4.4 eV for multilayer) to be used to fabricate highly selective solar-blind UV photodetectors, of which the dark current as low as 100 fA and rejection ratio of UV-C and UV-A reaches 7.6 × 10³. Under 239 nm incident light, the responsivity is 105 mA W⁻¹ and the detectivity is 7.58 × 10¹² Jones. Owing to the remarkable anisotropic crystal structure, AsSbO₃ also shows significant linear dichroism and nonlinear optical properties. Finally, a simple machine vision system is simulated by combining the real-time imaging function in solar-blind UV with a convolutional neural network. This study enriches the material system of ultrawide-bandgap 2D semiconductors and provides insight into the future development of high-performance solar-blind UV optoelectronic devices.     

Emerging Low‐Dimensional Nanoagents for Bio‐Microimaging

Nanomaterials with unique physical and biological properties have attracted increased attention for bio‐microimaging applications. Among them, low‐dimensional nanomaterials have quantum confinement effect in zero, one, or two dimensions, which have high specific surface area for cargo (such as dye) loading, anisotropic optical properties for polarization, and enhanced infrared absorption for efficient photoluminescence. In this review, recent efforts on bio‐microimaging of low‐dimensional nanomaterials, including confocal imaging, multiphoton imaging, Raman imaging, and super‐resolution imaging, will be highlighted. Bio‐microimaging principle, respective advantages and bottlenecks, and applications of low‐dimensional materials in various imaging technologies will be discussed. Furthermore, the review will shed light on the common synthetic methods of low‐dimensional nanomaterials. Finally, the classification and comparison of various nanomaterials, including carbon, black phosphorus, gold, metal composites, and 2D graphene analogues will also be elaborated.     

Raman Anisotropy Measurements: An Effective Probe of Molecular Orientation in Conjugated Polymer Thin Films

Understanding the molecular alignment of conjugated polymers within thin‐film samples is essential for a complete picture of their optical and transport properties, and hence for the continued development of optoelectronic device applications. We report here on the efficacy of Raman anisotropy measurements as a probe of molecular orientation, presenting results for aligned polyfluorene nematic glass films. Comparison is made with the results of optical dichroism measurements performed on the same samples. We show that in many cases molecular orientation can be more directly characterized by Raman anisotropy, and that it can have a greater sensitivity to the degree of molecular orientation than conventional optical dichroism. The fact that the Raman measurements can be readily performed on the same thin films (～ 100 nm thickness) that are required for optical dichroism means that there is no ambiguity in a direct comparison of results. This situation differs from that for standard X‐ray diffraction measurements (these require film thicknesses of several μm) and electron diffraction or electron energy loss spectroscopy measurements (these require film thicknesses of 10 nm or less). The Raman data allow the angle (relative to the chain axis) for the optical dipole transition moment to be deduced from the dichroic ratio, and confirm the role that its off‐axis component plays in limiting this ratio. The added fact that Raman anisotropy data can be collected in situ, in reflection geometry for standard device structures, and with microscopic resolution and chemical specificity makes the technique even more attractive as a non‐invasive device probe.     

Photoresponsive field-effect transistors based on multilayer SnS2 nanosheets

2D SnS₂ nanosheets are exfoliated by micromechanical exfoliation technique from SnS₂ single crystals which are synthesized by CVT methods. Monolayer SnS₂ nanosheet has been obtained and the Raman spectrum shows that A_1g mode of monolayer SnS₂ shows a slight softening compared with bulk SnS₂ single crystal. The field effect transistors (FETs) based on multilayer SnS₂ nanosheets have been fabricated, of which the electrical and photoelectrical properties have been measured. Under dark condition, with V_sd of 1 V, our SnS₂ FET shows n-type behavior. The carrier mobility of the FETs reach 3.51 cm²V^-1s^-1 and the ‘ON/OFF’ ratio is about 5×10². The SnS₂ FET is also illuminated under 532 nm laser with the power of 500 mW/cm². The light absorption causes an increment of carrier mobility (from 3.51 cm²V^-1s^-1 under dark condition to 3.85 cm²V^-1s^-1 under 532 nm laser illumination with the power of 500 mW/cm²) of SnS₂. The responsivity (R) and detectivity of our multilayer device under 500 mW/cm² 532 nm is 2.08 A/W and 6×10⁶ J, respectively. All the above properties indicate the potential of SnS₂ nanosheets to be used as FETs and phototransistors.     

Recent Progress of Flexible Photodetectors Based on Low-Dimensional II–VI Semiconductors and Their Application in Wearable Electronics

Flexible photodetectors exhibit many advantages such as a good bendability, foldability, and even stretchability as well as weight light, which have triggered a widely concerned in wearable electronics including wearable monitoring, wearable image sensing, self-powered integrated electronics, etc. Recently, various II–VI semiconductor nanostructures have become promising candidates in flexible photodetectors due to their unique characteristics, such as direct bandgap semiconductors, excellent optical and electric properties, high quantum efficiency, and inherent mechanical flexibility. Herein, the most recent progress on low-dimensional (0D, 1D, 2D, and related heterostructures) II–VI semiconductors based flexible photodetectors and their application in wearable electronic is reviewed. First, a brief introduction of the main sensing mechanisms and key figures of merits for photodetectors is presented. Then, the recent progresses on flexible photodetectors are provided, in which the functional materials synthesis methods are also discussed. More importantly, the applications of the flexible photodetectors are summarized, including wearable monitoring sensors, image sensors, and self-powered integrated wearable electronics. Finally, the challenges and the future research direction of the flexible photodetectors are discussed, meanwhile the outlook for the development of flexible photodetectors in the future integration of wearable electronic is also provided.