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在集成电路封装的质量控制中,键合拉力的地位非常重要。作为键合质量好坏的主要判定基准之一,影响键合拉力的因素有很多,包括键合工艺参数、焊线材料类型、拉力测试吊钩的测试位置、焊线线径以及线弧的长度和高度等。主要讨论在键合线弧投影长度不变的情况下,线弧高度的变化对键合拉力产生的影响。通过对不同线弧高度条件下测得的拉力数据进行整理分析,结果表明:键合线弧越高,拉力就越大;反之,拉力则越小。这为集成电路组装的正常量产过程中,工程技术人员对于键合线弧整体高度的合理有效控制及键合拉力规范的合理定义提供了参考依据。 相似文献
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在厚膜混合IC的基板键合区中,存在玻璃相残留、平整性差、沾污等问题。采用常规安全成球(BBOS)工艺进行芯片与基板互联时,存在键合不粘、短线尾等异常问题。本研究采用先植球后打线(BSOB)键合工艺,消除了键合过程中的异常问题。对比了BSOB、BBOS两种方式的可靠性,研究了劈刀磨损对BSOB方式的可靠性影响。结果表明,BSOB方式在初始拉力和300 ℃/24 h后的拉力及过程能力指数(Cpk)均明显高于规范值,键合40万个点后,无明显变化。BSOB方式是一个键在另一个键上面形成的复合键合,满足GJB548规范要求。 相似文献
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在自动楔焊键合中,要提高键合引线的抗拉强度,最重要的一点就是要减小第一键合点跟部的损伤。文章简述了自动楔焊键合的工艺过程,分析了在自动楔焊过程中造成第一键合点跟部损伤的主要原因:劈刀本身结构会对键合引线造成一定的摩擦损伤,劈刀在键合第一点后垂直上升所产生的应力会对第一键合点根部造成损伤,键合引线在拉弧过程中也会造成键合引线摩擦受损,送线系统的张力也会对第一键合点根部造成一定的损伤。文中还讨论了如何尽量减小摩擦和应力对第一键合点跟部所造成的损伤。 相似文献
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目前,在半导体闪存多芯片的金线键合工艺中,为满足堆叠芯片不断增加等结构需要,键合线弧要求更低、更长,制造工艺变得相对更加复杂。针对生产过程中常遇到的塌线问题,通过对金线键合工艺中线弧形成动作的过程分析,以金线弹动现象为线索,探究了生产过程中塌线问题产生的原因,并给出了相应解决方案。经过此研究,长线键合的生产工艺能力得到加强,其成果对新封装产品的研发及基板设计具有有益的参考价值。 相似文献
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在热超声引线键合过程中,低功率设置和低温下容易导致欠键合,高功率设置和高温下则容易出现过键合。通过实验采集了不同超声功率设置、不同温度下大量键合过程中换能杆末端轴向的速度信号、换能杆两端驱动电压和电流信号,并测量其键合强度,计算得到不同温度下换能杆的振幅。分析了超声功率和键合温度对振幅的影响规律,解释了功率设置和键合温度导致欠键合和过键合的可能原因,建立了功率设置和温度对换能杆振幅影响的模型。这些实验数据和结果有助于进一步研究键合过程中参数间的相互影响规律。 相似文献
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为提高国产陶瓷外壳用于铝丝楔焊键合的可靠性和产品质量,利用Minitab统计软件对一种封装形式为CQFP84的国产陶瓷外壳用于铝丝楔焊键合的工艺参数进行试验设计,并对试验结果进行直观分析和方差分析。讨论过键合功率、键合压力、键合时间及超声功率缓慢上升时间(Ramp)对键合拉力的影响及其显著程度。试验研究表明第2段参数的键合压力、第2段参数的键合功率及第1段参数的Ramp对键合拉力值有显著影响,以键合拉力为参考指标,得到了较优的键合工艺参数,通过验证试验键合拉力相比工艺参数优化前有明显提高,分散度也有明显改善,达到了提高产品可靠性的目标。 相似文献
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The ultrasonic wire bonding (UWB) process has been examined using transmission electron microscopy (TEM) and standard wire
pull testing techniques. Al-0.5 wt.% Mg wires 75 μm in diameter were bonded to pure and alloyed Al substrates. The bonding
parameters, surface roughness, and surface contamination levels were variables in the experiments. Cross-section TEM specimens
were made from these samples. TEM analysis was conducted on the wire, wire/substrate interface and substrate. Pull tests showed
that for the Al substrates the surface roughness or the presence of contamination did not effect the bond strength, whereas
for contaminated stainless steel substrates, a three μm surface finish resulted in the highest bond pull strength. The TEM
observations revealed features such as low-angle grain boundaries, dislocation loops and the absence of a high dislocation
density, indicating that the wire and substrate were dynamically annealed during bonding. Based on the width of a zone near
a grain boundary in the wire which was depleted of dislocation loops, it was estimated that local heating equivalent to a
temperature of 250° C for 90 msec was achieved in the wire during bonding. No evidence was found for melting along the bond
interface, indicating that UWB is a solid-state process. Based on the TEM observationsof the bond interface and the pull tests, it is concluded that the ultrasonic vibrations clean the surfaces to be joined to
the extent that a good bond can be obtained by intimate metal-metal contact in the clean areas. 相似文献
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提出一种由四个干扰阵元呈线阵不等间隔排布而构成的全新多环路反向交叉眼干扰构型,并借助通道回波、矢量合成和角度因子,分别对新构型下多环路反向交叉眼干扰的诱骗角度、诱骗距离和参数容限进行了详细的理论推导和仿真验证.仿真结果表明,在Ku波段,搭载于大型平台上的新环路构型不仅可产生很大的交叉眼增益,引导单脉冲雷达产生更大的诱骗距离和诱骗角度,而且在给定角度因子的情况下,随着干扰距离和干扰机转角的增大,角度因子等高线明显减小,多环路反向交叉眼干扰对参数容限的要求也越来越严苛. 相似文献
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A. Schneuwly P. Gröning L. Schlapbach V. P. Jaecklin 《Journal of Electronic Materials》1998,27(8):990-997
The influence of surface cleanliness of Au/Ni coated multichip materials (MCMs), Ag plated Cu lead frames, and Al bond pads
on semiconductor chips on the strength of Au wire bond contacts has been investigated. A clean surface is important for good
adhesion in any kind of attachment process. Investigations by means of x-ray photoelectron spectroscopy have been performed
on the bond substrates to determine the chemical composition, the nature as well as the thickness of the contamination layer.
The influence of contamination on bond contact quality has been examined by pull force measurements, which is an established
test method in semiconductor packaging industry for evaluating the quality of wire bonds. The results clearly show that a
strong correlation between the degree of contamination of the substrate and pull strength values exists. Furthermore, a contamination
thickness limiting value of 4 nm for Au and Ag substrates was determined, indicating good wire bond contact quality. The effect
of plasma cleaning on wire bondability of metallic and organic (MCMs) substrates has been examined by pull force measurements.
These results confirm the correlation between surface contamination and the strength of wire bond contacts for Au/Ni coated
MCMs and Ag plated Cu lead frames. Atomic force microscopy measurements have been performed to determine the roughness of
bond surfaces, demonstrating the importance of nanoscale characterization with regard to the bonding behavior of the substrates.
Finally, bonding substrates used in integrated circuit packaging are discussed with regard to their Au wire bonding behavior.
The Au wire bonding process first results in a cleaning effect of the substrate to be joined and secondly enables the change
of bonding energy into frictional heat giving rise to an enhanced interdiffusion at the interface. 相似文献
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With the rapid development of advanced microelectronic packaging technologies, research on fine-pitch wire bonding with improved reliability is driven by demands for smaller form factors and higher performance. In this study, thermosonic wire bonding process with a 20 μm wire for fine-pitch interconnection is described. To strengthen stitch bonds made in a gold-silver bonding system when the bonding temperature is as low as 150 °C, ball bumps (security bump) are placed on top of the stitch bonds. The ball-stitch bond and bump forming parameters are optimized using a design of experiment (DOE) method. A comparison of pull test results for stitch bonds with and without security bumps shows a substantial increase of the stitch pull force (PF) due to the use of security bonds. By varying the relative position of the security bumps to the stitch bonds via wedge shift offset (WSO), a WSO window ranging from 15 to 27 μm results in stitch PF higher than 7 gf, which is equivalent to an increase in average stitch PF of 118%. 相似文献