高可用性应用的电源保护

本文从传统UPS带来的浪费引出了电源可用性理论，介绍了具有冗余特性的电源保护的优点，并对现在市场上的电源保护系统做了分类以及介绍了测量电源可用性指数的方法。     

线性分布式电源在雷达系统中的应用

在介绍雷达系统常用电源形式的基础上，较详细地介绍了一种用于雷达系统的线性分布式电源的及技术性能，并与开关模式的分布式电源进行了比较。     

通信电源的管理和维护

详细介绍了通信电源系统的组成和特点，强调了对通信电源加强管理的重要性。重点介绍了对蓄电池的维护和通信设备的防雷措施方法，以及通信电源和通信设备的接地系统。     

电源集中监控的现状及应用拓展

本文介绍了电源集中监控系统的开发现状，探讨了实现电源集中监控的主要问题，开拓了电源集中监控工程的应用。     

低成本板级电源的几种方案及合理设计

本文简要介绍几种低成本板级电源的解决方案，然后重点介绍如何合理设计，以减小电源纹波和噪音，有更好的电磁兼容性，最后介绍了测试的注意事项。     

中兴新通信电源技术

本文在介绍通信电源技术发展趋势的基础上，着重介绍了中兴新通信电源技术的特点，并给出了几种监控组网方案。     

CF系列晶闸管触发器在整流、充电、浮充电电源中的应用

详细介绍了利用CF系列晶闸管触发器组成的自动稳压、稳流的整流(直流)电源、充电电源和电力操作用的浮充电电源的实例，同时还介绍了浮充电源的工作特性。     

电源抗干扰技术的研究

系统地介绍了电源技术中抑制电源干扰方法，以及在具体应用时应注意的问题，并介绍了非常实用的新材料、新器件。     

基于PA85的新型压电陶瓷驱动电源

压电陶瓷驱动电源是压电陶瓷微位移器应用中关键部件。PA85是一种高压、高精度的MOSFET运算放大器。文章介绍了一种基于PA85的新型压电陶瓷驱动电源，详细介绍了电源复合放大电路部分的设计原理和并对其稳定性进行了分析。该电源具有精度高，驱动能力强，结构简单，稳定性好的特点。     

通信电源的现状和展望

介绍我国通信电源的现状，包括供电体制、供电系统和电源设备的技术水平、使用维护状况，并介绍国内外通信电源的新系统和新电源设备。     

Built-in ESD Protection for RFID Tag ICs

The built-in Electro-Static discharge (ESD) protection circuits for Radio frequency identification (RFID) tag ICs are proposed.The ESD protection function is built into the rectifier and amplitude limiter.The rectifier and limiter are connected directly to the RF interface,and some transistors can discharge the larger current.These transistors can be used to build ESD protection circuits,through the redesign and optimization.The built-in ESD protection circuits can improve the ESD protection level and reduce the layout area.The circuits have been fabricated in 0.18μm CMOS process.The test results show that the built-in ESD protection circuits work well under 4kV ESD pressure and save as much as 72％ of the layout area compare with foundry standard ESD protection cells.     

SCR器件在CMOS静电保护电路中的应用

静电放电(ESD)对CMOS电路的可靠性构成了很大威胁。随着CMOS电路集成度的不断提高，其对ESD保护的要求也更加严格。针对近年来SCR器件更加广泛地被采用到CMOS静电保护电路中的情况，文章总结了SCR保护电路发展过程中各种电路的工作机理。旨在为集成电路设计人员提供ESD保护方面的设计思路以及努力方向。     

开关电源的过载保护电路设计

基于UC3842的反激式开关电源,文中从原理和实验两方面分析了恒功率控制和恒电流控制的过载保护电路,阐述了各自的特点,并提出了一种适用于短暂过载场合的延时锁定关断过载保护电路,实验证明此电路工作于保护模式时开关元件无开关应力,为高峰值负载电源过载保护电路的设计提供了一种有效的方法。     

两种低功耗新型过温保护电路的设计

电源管理芯片中过温保护电路用来检测芯片的温度。当温度过高时,过温保护电路输出保护信号,使芯片停止工作,以免温度过高而损坏芯片。为了实现上述过温保护电路功能,提出了两种新型的过温保护电路,不但能够精确地检测芯片的温度,并且功耗很低。采用0．5μm N-阱CMOS工艺的方法,进行电路设计,并使用CadenceSpectre工具进行了仿真实验验证。仿真实验结果表明两种电路仅消耗3μA的电流就能够实现精确的温度检测,其具有较强的适应性,高灵敏度和高精度的特点,应用前景比较广泛。     

Comprehensive ESD protection for RF inputs

We demonstrate that narrow-band tuned circuits may be used for ESD protection of RF inputs, and a figure of merit for optimization of these circuits is presented. The performance of the ESD-protected RF circuit is dependent on the quality factor of the ESD device, and various protection devices are evaluated in this work. Record-breaking human body model (HBM) protection levels, exceeding 5 kV, have been achieved without significantly degrading the RF performance at 5 GHz. Broadband circuit protection is also addressed.     

ESD–RF co-design methodology for the state of the art RF-CMOS blocks

This paper describes an approach to design ESD protection for integrated low noise amplifier (LNA) circuits used in narrowband transceiver front-ends. The RF constraints on the implementation of ESD protection devices are relaxed by co-designing the RF and the ESD blocks, considering them as one single circuit to optimise. The method is applied for the design of 0.25 μm CMOS LNA. Circuit protection levels higher than 3 kV HBM stress are achieved using conventional highly capacitive ggNMOS snapback devices. The methodology can be extended to other RF-CMOS circuits requiring ESD protection by merging the ESD devices in the functionality of the corresponding matching blocks.     

Power integrated circuits: problems, tradeoffs, and solutions

Current, voltage, and power tradeoffs are presented together with circuits for protection in the case of short circuit, overvoltage, supply voltage reversal, and inductive load transients. The future developments in power integrated circuits are discussed.     

一种健康管理芯片中数字控制保护电路的设计与实现

数字控制保护电路是健康管理芯片的重要组成部分。健康管理芯片对发射组件进行保护,具有电流检测、温度检测、过流保护、过温保护、脉宽占空比保护、寿命记录等功能。数字控制电路进行参数配置与存储,用逻辑运算处理模数转换后的信号,产生控制信号给模拟电路并上报状态。文中采用硬件描述语言设计并实现了一种串行外设接口,具有电可擦除只读存储器读写、电流和温度比较和保护、占空比检测和保护、寿命计数等功能,并采用XFAB 0. 35 um 工艺完成了芯片流片。测试结果表明:实现了组件健康管理的数字控制与保护功能,能够满足组件高可靠性、小型化、低成本的需求。     

High-voltage DMOS integrated circuits using floating-gate protection technique

An efficient low power protection scheme for thin gate oxide of high voltage (HV) DMOS transistor is presented. To prevent gate-oxide breakdown and protect HV transistor, the voltage controlling its gate must be within 5 V from the HV supply. Thus signals from the low voltage domain must be level shifted to control the gate of this transistor. Usually this level shifting involves complex circuits that reduce the speed besides requiring of large power and area. In this paper, a simple and efficient protection technique for gate-oxide breakdown is achieved by connecting a capacitor divider structure to the floating-gate node of HV transistor to increase its effective gate oxide thickness. Several HV circuits, including: positive and negative HV doublers and level-up shifters suitable for ultrasound sensing systems are built successfully around the proposed technique. These circuits were implemented with 0.8 μm CMOS/DMOS HV DALSA process. Simulation and experimental results prove the good functionality of the designed HV circuits using the proposed protection technique for voltages up to 200 V.     

ESD issues in compound semiconductor high-frequency devices and circuits

The need of ESD protection for high frequency devices and circuits is underlined by reviewing the compound semiconductor material properties with emphasis on ESD stress and by collecting their ESD failure thresholds. Basic requirements for possible ESD protection structures in the microwave frequency regime are discussed and possible ESD protection devices and circuit concepts are proposed.