大功率无衬底N—GaAlAs／P—GaAs：Si单异质结红外发光二极管

报道了一种大功率无衬底Ｎ－ＧａＡｌＡｓ／Ｐ－ＧａＡｓ：Ｓｉ单异质结红光二极管的制造工艺和主要光电特性。该器在５０ｍＡ工作电流下，输出功率典型值７．５ｍＷ，最大功率１１ｍＷ。     

硅基异质结光电探测器用材料的应用研究进展

综述当前ＧｅＳｉ／Ｓｉ、ＧａＡｓ／ＧａＡｌＡｓ、ＨｇＣｄＴｅ、ＰｔＳｉ和ＧａＮ光电探测器用材料的工作原理、特点、研究现状及发展趋势。以新型薄膜外延技术－分子束外延制备的ＧｅＳｉ／Ｓｉ等人工超晶格材料倍受关注,硅基异质子阱材料成为新一代光电探测材料的发展方向。     

AlGaAs／InGaAs功率PHEMT用异质材料的计算机优化与器件实验结果

借助一新的工艺模拟与异质器件模型用ＣＡＤ软件──ＰＯＳＥＳ（Ｐｏｉｓｓｏｎ－ＳｃｈｒｏｅｄｉｎｇｅｒＥｑｕａｔｉｏｎＳｏｌｖｅｒ），对以ＡｌＧａＡｓ／ＩｎＧａＡｓ异质结为基础的多种功率ＰＨＥＭＴ异质层结构系统（传统、单层与双层平面掺杂）进行了模拟与比较，确定出优化的双平面掺杂ＡｌＧａＡｓ／ＩｎＧａＡｓ功率ＰＨＥＭＴ异质结构参数，并结合器件几何结构参数的设定进行器件直流与微波特性的计算，用于指导材料生长与器件制造。采用常规的ＨＥＭＴ工艺进行ＡｌＧａＡｓ／ＩｎＧａＡｓ功率ＰＨＥＭＴ的实验研制。对栅长０．８μｍ、总栅宽１．６ｍｍ单胞器件的初步测试结果为：ＩＤｓｓ２５０～４５０ｍＡ／ｍｍ；ｇｍ０２５０～３２０ｍＳ／ｍｍ；Ｖｐ－２．０－２．５Ｖ；ＢＶＤＳ５～１２Ｖ。７ＧＨｚ下可获得最大１．６２Ｗ（功率密度１．０Ｗ／ｍｍ）的功率输出；最大功率附加效率（ＰＡＥ）达４７％。     

大功率无衬底N－GaAlAs／P－GaAs：Si单异质结红外发光二极管

报道了一种大功率无衬底Ｎ－ＧａＡｌＡｓ／Ｐ－ＧａＡｓ：Ｓｉ单异质结红外发光二极管的制造工艺和主要光电特性。该器件在５０ｍＡ工作电流下，输出功率典型值７．５ｍＷ，最大功率１１ｍＷ。     

SiC异质结双极晶体管的高频性能

用一种简练的异质结双极晶体管（ＨＢＴ）模型来模拟ＳｉＣ基双极晶体管的高频和大功率特性。研究了一种外壳温度在２７℃（３００Ｋ）到６００℃（８７３Ｋ）下的６Ｈ－ＳｉＣ／３Ｃ－ＳｉＣＨＢＴ。将其高频大功率特性与ＡｌＧａＡｓ／ＧａＡｓＨＢＴ作了比较。不出所料，欧姆接触电阻限制了ＳｉＣＨＢＴ的高频性能。现在看来，在ＳｉＣ上只能可靠地产生１×１０￣（－４）Ω－ｃｍ￣２的接触电阻。所以ｆ＿Ｔ和ｆ＿（ｍａｘ）的最高实际值仅分别为４．４ＧＨｚ和３．２ＧＨｚ。但假定发射极、基极和集电极的接触电阻低到１×１０￣（－６）Ω时，则６Ｈ／３ＣＳｉＣＨＢＴ的ｆ＿Ｔ和ｆ＿（ｍａｘ）分别可达到３１．１ＧＨｚ和１２．７６Ｈｚ。     

分子束外延生长InGaAs/GaAs异质结及其在独特场效应晶体管中的应用

用分子束外延技术生长了ＩｎＧａＡｓ／ＧａＡｓ异质结材料,并用ＨＡＬＬ效应法和电化学Ｃ－Ｖ分布研究其特性。讨论了ＩｎＧａＡｓ／ＧａＡｓ宜质结杨效应晶体管（ＨＦＥＴ）的优越性。和ＧａＡｓ ＭＥＳＦＥＴＳ或ＨＥＭＴ相比,由于ＨＦＥＴ没有Ａｌ组份,具有低温特性好,低噪声和高增益等特点。本文研究了具有ＩｎＧａＡｓ／ＧａＡｓ双沟道和独特掺杂分布的低噪声高增益ＨＦＥＴ。     

GaAs、GaP、InP、InGaAsP、AlGaAs、InAlGaAs的化学腐蚀研究

为研制全集成光开关、微片式激光器等，对ＧａＡｓ、ＧａＰ、ＩｎＧａＡｓＰ、ＩｎＡＩＧａＡｓ、ＡｌＧａＡｓ等材料的化学腐蚀进行了实验研究。为了研制ＩｎＡｌＧａＡｓ／ＩｎＡｌＡｓ／ＩｎＡｌＧａＡｓ微片式激光器，开发了Ｈ３ＰＯ４／Ｈ２Ｏ２／Ｈ２Ｏ薄层腐蚀液和ＨＣｌ／Ｈ２Ｏ选择性腐蚀液；为了研制ＩｎＧａＡｓＰ／ＩｎＰ／ＩｎＧａＡｓＰＴｂａｒ型光波导，开发了ＨＣｌ／Ｈ３ＰＯ４／Ｈ２Ｏ２薄层腐蚀液和ＨＣｌ／Ｈ２Ｏ２选择性腐蚀液；为了研制ＧａＰ、ＩｎＧａＰ光波导，开发了ＨＣｌ／ＨＮＯ３／Ｈ２Ｏ薄层腐蚀液。它们都具有稳定、重复性好、速率可控、腐蚀后表面形貌好等特点。除此之外，蚀刻成的ＧａＰ光波导侧壁平滑无波纹起伏。此种结果尚未见报导。     

LP－MOCVD生长InGaAs／GaAs量子阱

用低压ＭＯＣＶＤ（ＬＰ－ＭＯＣＶＤ）生长三种不同的ＩｎＧａＡｓ／ＧａＡｓ应变层量子阱材料，其中两种含ＡｌＧａＡｓ限制层。结果表明，ＡｌＧａＡｓ限制层对量子阱的发光强度影响很大，与没有ＡｌＧａＡｓ限制层的结果相比，带ＡｌＧａＡｓ限制层的结构的发光强度要强一个数量级以上。在低温（１８Ｋ）ＰＬ光谱图中，我们看到，除了存在主峰以外，在主峰两侧还各有一个子峰，这些子峰可能与量子阱的质量有关。     

HBT电压控制振荡器的相位噪声

研究了电压控制振荡器（ＶＣＯ）的相位噪声与构成该振荡器的有源器件的低频噪声的关系,测试了ＳｉＢＪＴ、ＡｌＧａＡｓ／ＧａＡｓ ＨＢＴ和ＧａＩｎＰ／ＧａＡｓ ＨＢＴ的低频噪声,并分析了各自低频噪声产生的原因,提出了选择ＧａＩｎＰ／ＧａＡｓ ＨＢＴ ＶＣＯ来实现微波固体振荡器低相位噪声化这一发展方向。     

GaAs表面及AlxGa1—xAs／GaAsHBT外基区表面（NH4）2S／SiNx钝化工艺研究

分析了ＡｌｘＧａ１－ｘＡｓ／ＧａＡｓＨＢＴ外基区表面复合电流及外基区复面复合速度对直接增益的影响，用光致发光（ＰＬ）谱和Ａｌ／ＳｉＮｘ－Ｓ／ＧａＡｓＭＩＳ结构ＣＶ特性，研究了ＧａＡｓ表面（ＮＨ４）２Ｓ／ＳｉＮｘ钝化工艺的效果及其稳定性。结果表明，ＥＣＲ－ＣＶＤ淀积ＳｉＮｘ覆盖并在Ｎ２气氛中退火有助于改善ＧａＡｓ表面硫钝化效果的稳定性，在此基础上形成了一套包括（ＮＨ４）２Ｓ处理，ＳｉＮｘＥＣＲ－ＣＶ     

NIP型非晶硅薄膜太阳能电池的研究

采用射频等离子体增强化学气相沉积(RF-PECVD)技术制备非晶硅(a-Si)NIP太阳能电池,其中电池的窗口层采用P型晶化硅薄膜,电池结构为Al/glass/SnO2/N(a-Si:H)/I(a-Si:H)/P(cryst-Si:H)/ITO/Al.为了使P型晶化硅薄膜能够在a-Si表面成功生长,电池制备过程中采用了H等离子体处理a-Si表面的方法.通过调节电池P层和N层厚度和H等离子体处理a-Si表面的时间,优化了太阳能电池的制备工艺.结果表明,使用H等离子体处理a-Si表面5 min,可以在a-Si表面获得高电导率的P型晶化硅薄膜,并且这种结构可以应用到电池上;当P型晶化硅层沉积时间12.5 min,N层沉积12 min,此种结构电池特性最好,效率达6.40%.通过调整P型晶化硅薄膜的结构特征,将能进一步改善电池的性能.     

高效硅基异质结太阳能电池的模拟

a-Si:H/c-Si异质结太阳能电池的基本参数,如层厚度、掺杂浓度、a-Si:H/c-Si界面缺陷、功函数等是影响载流子传输特性和电池效率的关键因素。在本文中,利用AFORS-HET程序,研究了这些参数与a-Si:H/c-Si电池的性能的关联性。最后,具有TCO/n-a-Si:H/i-a-Si:H/p-c-Si/p -a-Si:H/Ag结构的太阳能电池的最优化性能被获得,其光电转换效率为27.07%（VOC: 749 mV, JSC: 42.86 mA/cm2, FF: 84.33%）。深入地了解异质结电池的输运特性,对进一步提高电池的效率有很大的帮助,同时对实际太阳能电池的制造也能提供有益的指导。     

引入微晶硅底电池的PIN型三结Si基薄膜太阳电池的制备

为充分利用太阳光谱能量,在玻璃衬底的PIN型a-Si/a-SiGe电池中直接引入了微晶硅(μc-Si:H)底电池.从透明导电氧化物(TCO)衬底的光透过率估算了PIN型a-Si:H/a-SiGe:H/μc-Si:H三结电池实现高转化效率的可行性.通过调整μc-Si:H底电池厚度考察三结电池的性能变化,结果发现,受中间电...     

Optimization of a-Si:H-based three-terminal three-color detectors

Three-terminal three-color n-SiC:H/a-Si:H-based TCO/PINIP/TCO/PIN/metal detectors are presented. Assemblies having different surface roughness of transparent conducting oxide (TCO) layers are compared with regard to the external steady-state characteristics and transient behavior. The roughness of the sputtered TCO surface can be modified by an etching treatment. With the selection of smooth or textured TCO surfaces, the wave propagation of light within the device is controlled. This design technique can be exploited to optimize the color separation and improve the reproducibility of spectral responsivities in the assemblies. The examined assemblies exhibit very selective spectral responsivity for the fundamental chromatic components (red-green-blue) and a linear photocurrent-generation rate relationship over more than five orders of magnitude of illumination intensity. Since the color detection of blue and green light is performed in the PINIP structure by bias switching, the transient current response of the PINIP structures is investigated. A reciprocal relationship between the delay time and illumination intensity is established. An optimum operation region for the switching voltages is determined with regard to the quality of color separation, dynamic range, and transient behavior     

a-Si太阳电池中非线性串联电阻效应(英文)

A non-linear resistance effect has been found in a-Si PIN solar cells. The dark I-V characteristics of the cells are described.Though the dependence of ln(Isc) on Voc under different light intensity for all the cells can be written Voc = nLKTln(Isc/Io') the differences between the dark and illuminated diode parameters(nd and nL, Io and Io') are varied for the cells with different performances. If the nd of the cell is about 2 then nL相似文献   

可用于可穿戴设备的透明非晶硅薄膜太阳能电池的研究

一种可用于可穿戴设备屏幕表面的透明非晶硅薄膜太阳能电池,采用激光刻蚀高密度微纳光通道阵列、TCO薄膜作为透明导电背电极,并减薄I层厚度来提升光线透过率。实验表明随着光刻密度增加或I层厚度的减少,光电转换效率会降低,光线透过率会增加,当I层厚度300nm,光刻孔隙直径30m,阵列间隔55m以内时,可获得50%以上的透过率（最高59%）和2.5%以上的光电转化效率（最高3%）。     

Al/a-Si:H界面反应和热处理行为光发射研究

利用XPS和AES对Al/a-Si∶H界面进行了研究.实验结果表明,最初阶段Al淀积在a-Si∶H上出现金属团.Al淀积量超过一定值后,起化学反应的Al和Si形成了互溶区,同时没有化学反应的Al在表面上形成金属Al层.此外,真空热处理加剧了Al/aSi∶H的界面反应和元素互扩散.     

Ion implanted contacts to a-Si:H thin-film transistors

Fabrication steps to improve ion implanted source-drain contacts to hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFT's) have been determined. After establishing a contact performance baseline using devices made with Al/intrinsic a-Si:H contacts, improvements were made to the metal/a-Si:H contact scheme using unheated and heated implants, single- and double-level phosphorous implants, a buffered HF acid dip just prior to metal deposition, Al and Al-Si-Cu metallization schemes, and a post-metallization anneal.     

Electronic properties of amorphous silicon in solar cell operation

Amorphous silicon (a-Si) solar cells, which have efficiencies up to 5.5 percent, are unique in several ways, and their cell characteristics no longer depend on the same parameters generally considered in single crystal cells. This paper discusses the operation of such cells, and relates the major new parameters to the electronic properties of a-Si which are highly dependent on the densities of gap centers in this disordered material. The effect of the photoconductivity in intrinsic a-Si on the series resistance of the cell, the quality of a-Si junctions and their ability to transport current densities generated under AM1 illumination are presented. Space-charge densities as low as 5 × 10¹⁵cm^-3are found in a-Si junctions, which are orders of magnitude lower than previous estimates for glow discharge produced a-Si. The effects of electric field distributions and diffusion lengths of holes on collection efficiencies and cell characteristics are discussed and illustrated. Although significant trapping of photogenerated holes is found in many of the a-Si films, diffusion lengths of few tenths of a micron are also indicated by the results presented.     

An amorphous SiC/Si heterojunction p-i-n diode for low-noise andhigh-sensitivity UV detector

The authors report the UV photoresponse of an a-SiC/a-Si heterojunction p-i-n diode with the structure of glass/TCO (transparent conducting oxide, SnO₂:F)/p-a-SiC:H/i-a-Si:H/n-a-Si:H/Al. The diode has been designed for a high-sensitivity and low-noise UV detector. The diode has its peak responsivity (0.254 A/W) and quantum efficiency (81.5%) at 385 nm. This structure possesses (1) the window effect by using the wide-bandgap a-SiC:H as the front layer (p-layer) and (2) the carrier confinement effect at the p-SiC:H/i-a-Si:H interface. Enhancements are proposed to raise UV response and suppress long-wave responsivity. The diode was designed to be operated under zero external bias to suppress the dark-current-induced noise. Results show a 200% higher UV sensitivity than a GaAsP Schottky photodiode in the 200-400-nm wavelength region