8通道-1.6nm Si纳米线阵列波导光栅的设计与制作

设计了基于绝缘层上硅(SOI)材料的8通道Si纳米线阵列波导光栅(AWG),器件的通道间隔为1.6nm,面积为420μm×130μm。利用传输函数法模拟了器件传输谱,结果表明,器件的通道间隔为1.6nm,通道间串扰为17dB。给出了结合电子束光刻(EBL)和感应耦合等离子(ICP)刻蚀技术制备器件的详细流程。光谱测试结果分析表明,器件通道间隔为1.3～1.6nm,通道串扰为3dB,中心通道损耗为11.6dB。     

Si纳米线阵列波导光栅制备

采用绝缘层上Si(SOI)材料设计制备了3×5纳米线阵列波导光栅(AWG),器件大小为110μm×100μm。利用简单传输法模拟了器件的传输谱,并采用二维时域有限差分(FDTD)模拟中心通道输出光场的稳态分布,模拟结果表明,器件的通道间隔为11 nm,通道间的串扰为18 dB。通过电子束曝光(EBL)和感应耦合等离子(ICP)刻蚀制备了所设计的器件,光输出谱测试分析表明,器件中心通道的片上损耗为9 dB,通道间隔为8.36～10.40 nm,中心输出通道的串扰为6 dB。在误差允许范围内,设计和测试的结果一致。     

基于SOI的16通道200GHz阵列波导光栅

设计并制作了基于绝缘体上硅(SOI)材料的1×16阵列波导光栅(AWG).该AWG器件的中心波长为1 550 nm,信道间隔为200 GHz,采用了脊型波导结构.首先确定了波导的结构尺寸以保证单模传输,并利用束传播法(BPM)模拟了波导间隔、弯曲半径和锥形波导长度等参数对器件性能的影响,对器件结构进行了优化,同时也利用BPM方法模拟了器件的传输谱.模拟结果显示:器件的最小信道损耗为4.64 dB,串扰小于-30 dB.根据优化的器件结构,通过光刻等半导体工艺制作了AWG,经测试得到AWG器件的损耗为4.52～8.1 dB,串扰为17～20 dB,能够实现良好的波分复用/解复用功能.     

箱型光谱响应聚合物阵列波导光栅的研制

通过减少奇数阵列波导的芯宽度,同时增加偶数阵列波导的芯宽度的技术,构造了箱型光谱. 选用氟化聚芳醚FPE聚合物材料,设计并制备了17×17信道箱型光谱响应阵列波导光栅（AWG）波分复用器. 测试结果表明,器件的中心波长为1550.87nm,波长间隔为0.8nm, 3dB带宽约为0.476nm,串扰低于-21dB,插入损耗为13~15dB.     

箱型光谱响应聚合物阵列波导光栅的研制

通过减少奇数阵列波导的芯宽度,同时增加偶数阵列波导的芯宽度的技术,构造了箱型光谱-选用氟化聚芳醚FPE聚合物材料,设计并制备了17×17信道箱型光谱响应阵列波导光栅(AWG)波分复用器.测试结果表明,器件的中心波长为1550.87nm,波长间隔为0.8nm,3dB带宽约为0.476nm,串扰低于-21dB,插入损耗为13～15dB.     

17×17信道光谱响应平坦化的聚合物阵列波导光栅的研制

选用氟化聚芳醚FPE聚合物材料,设计并制备出了17×17信道光谱响应平坦化阵列波导光栅（AWG）波分复用器. 实验测试结果表明,器件的中心波长为1550.83nm,波长间隔为0.8nm, 3dB带宽约为0.476nm,插入损耗为13~15dB,串扰低于-21dB.     

17×17信道光谱响应平坦化的聚合物阵列波导光栅的研制

选用氟化聚芳醚FPE聚合物材料,设计并制备出了17×17信道光谱响应平坦化阵列波导光栅(AWG)波分复用器.实验测试结果表明,器件的中心波长为1550.83nm,波长间隔为0.8nm,3dB带宽约为0.476nm,插入损耗为13～15dB,串扰低于-21dB.     

SiO2 8×8阵列波导光栅的研制

在Si基SiO2材料上设计并制作了中心波长为1.55 μm、通道间隔为0.8 nm的8×8阵列波导光栅(AWG).详细介绍了器件的设计、制作和测试,并对测试结果及工艺误差进行了深入的分析讨论.封装后的测试结果显示,器件的3 dB带宽为0.22 nm;中央通道输入时,最小和最大插入损耗分别为4.01 dB和6.32 dB;边缘通道输入时,最小和最大插入损耗分别为6.24 dB和9.02 dB;对比不同通道输入时输出通道的中心波长,其偏移量低于0.039 nm;器件的通道间串扰小于-25 dB;偏振依赖损耗(PDL)小于0.3 dB.     

17×17信道光谱响应平坦化的聚合物阵列波导光栅的研制

选用氟化聚芳醚FPE聚合物材料,设计并制备出了17×17信道光谱响应平坦化阵列波导光栅（AWG）波分复用器.实验测试结果表明,器件的中心波长为1550.83nm,波长间隔为0.8nm,3dB带宽约为0.476nm,插入损耗为13-15dB,串扰低于-21dB.     

结构紧凑的高均匀性硅波导阵列波导光栅

基于绝缘体上硅材料平台，设计并制作了一种结构紧凑的高均匀性硅波导阵列波导光栅，其拥有8个输出通道并且通道间隔为200 GHz。分析了绝缘体上硅材料平台中硅波导的弯曲半径对弯曲损耗和有效折射率的影响。测试结果表明，该器件的插入损耗为19.6 dB，串扰为-15 dB，非均匀性为0.87 dB,3 dB带宽为1.06 nm，结构尺寸仅为294μm×190μm。芯片的制作工艺与互补金属氧化物半导体工艺兼容，这使得阵列波导光栅的大批量、低成本生产成为可能，对集成波分复用网络的发展具有重要的意义。     

16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides

A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed.The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB.The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate.The demultiplexing characteristics are observed with crosstalk of 5-8 dB,central channel’s insertion loss of 2.2 dB,free spectral range of 24.7 nm and average channel spacing of 1.475 nm.The cause of the spectral distortion is analyzed specifically.     

硅基竖直耦合三环谐振波分复用器的特性

对1×N信道硅基竖直耦合三环谐振波分复用器的传输特性进行了分析,给出了光学传递函数的公式.在中心波长1550.918nm、波长间隔1.6nm的情况下,对其振幅耦合比率、波谱响应、分光光谱、插入损耗、信道间的串扰进行了数值模拟.计算结果表明,该器件具有以下良好性能:若取小环与信道间的振幅耦合比率为0.27,小环与大环间的振幅耦合比率为0.06,该器件具有箱形波谱响应,输出光谱中的次峰值已被抑制到-25dB,谐振峰平坦且陡峭,3dB带宽约为0.28nm,每条输出信道的插入损耗及串扰较小,插入损耗小于0.71dB,串扰可降至-53dB以下.     

WDM experiment using 1300/1500 nm dual-wavelength LED for single-mode fibre transmission systems

A wavelength-division-multiplexing transmission experiment using a 1300/1500 nm dual-wavelength LED modulated at 140/560 Mbit/s over 10 km of single-mode fibre has been demonstrated. This dual-LED device has a 9 ?m emitter spacing between the active facets with a coupling loss of 2.3 dB through a lens/fibre coupler. The chromatic dispersion penalty for the 1500 nm channel at 560 Mbit/s was about 6-5 dB and the electrical crosstalk penalty was 2.5 dB.     

17×17 硅基聚合物信道箱形光谱阵列波导光栅的制备

Arrayed waveguide grating (AWG) is a key device in wavelength-division multiplexing (WDM) system, and the flat spectral response of the AWG device is required. In this paper, the RIE process has been improved. By using the steam- redissolution technique, the insertion loss and the crosstalk have been reduced. Experimental results show that the central wavelength is 1550.86nm, and 3-dB bandwidth is about 0.478 nm, insertion loss is 10.5 dB, crosstalk is about –22 dB. The insertion loss of an AWG device is reduced by about 3 dB for the central channel and 4.5 dB for the edge channels, and the crosstalk is reduced by 2.5 dB after the steam- redissolution.     

Fabrication of 17 × 17 polymer/Si arrayed waveguide grating with flat spectral response using steam-redissolution technique

Arrayed waveguide grating (AWG) is a key device in the wavelength-division multiplexing (WDM) system, and the flat spectral response of the AWG device is required. In this paper, the RIE process has been improved. By using the steam-redissolution technique, the insertion loss and the crosstalk have been reduced. Experimental results show that the central wavelength is 1550.86 nm, the channel spectral response flatness is about 1.5 dB, 3-dB bandwidth is about 0.478 nm, insertion loss is 10.5 dB, and crosstalk is about-22 dB. The insertion loss of an AWG device is reduced by about 3 dB for the central channel and 4.5 dB for the edge channels, and the crosstalk is reduced by 2.5 dB after the steam- redissolution.     

基于SOI材料的阵列波导光栅的制作

采用ICP刻蚀的方法,在SOI材料上制作出了中心波长为 1. 5509μm、信道间隔为 200GHz的 5×5阵列波导光栅(AWG).测试中心波长与设计值相差 0. 28nm,测试波长间隔与设计值相差在 0. 02nm之内,相邻信道串扰接近10dB,信道插入损耗均匀性为 0. 7dB,测试结果表明该器件能够初步达到分波功能.     

Demonstration of a 15×15 arrayed waveguide multiplexer on InP

By interconnecting two star couplers with a waveguide grating, the authors built a monolithic 15×15 multiplexer on InP. The grating order of 148 gives a free spectral range of 10.5 nm (1.3 THz) and a channel spacing of 0.7 nm (87 GHz) at 1550 nm wavelength. A crosstalk between adjacent channels of less than 18 dB and a residual crosstalk of less than 25 dB were obtained. The on-chip insertion loss is typically 2-4 dB