基于决策理论的信号调制识别改进算法

针对基于决策判决理论的传统算法对通信信号调制识别在低信噪比下正确识别率较低的问题,提出了一种基于多种特征参数判决的改进算法。利用高阶矩取代了利用零中心归一化瞬时幅值绝对值的标准偏差来区分ASK信号,对FSK信号采用功率谱谱峰数进行识别。仿真使用了包括模拟调制信号在内的多达11种不同类型的调制信号,仿真结果表明,在信噪比不低于8 dB下,该方法具有较高的正确识别率。     

高阶累积量调制识别改进算法的FPGA实现

基于高阶累积量的数字调制信号识别算法在低信噪比环境下识别率较低。针对这一问题,提出了高阶累积量的改进算法,通过调整特征参数的判别顺序先识别出MASK信号的方式,取得了较好的效果。讨论了该算法的FPGA设计,并利用Virtex-4开发板对该设计进行硬件协同仿真测试。测试结果表明,该算法在低信噪比环境下对2ASK,4ASK,4PSK,16QAM信号的识别率有显著提高。在信噪比为4 dB时,对2ASK,4ASK信号的识别率分别为93.4%,100%。在信噪比为2 dB时,对4PSK,16QAM信号的识别率最高,达到了99.7%。     

基于对称相关谱和累积量切片的QAM信号识别

随着正交振幅调制信号(Quadrature Amplitude Modulation,QAM)的广泛应用,对其调制方式的识别显得至关重要。针对M-QAM的四次方谱谱线特征在低信噪比时对调制信号识别率低,且计算复杂度高等问题,提出了一种基于信号四次方的对称相关谱和四阶累积量的一维切片值的M-QAM调制方式的盲识别算法。该算法无需波特率和采样率等先验信息,没有复杂的迭代过程,可以应用于实际信号的调制识别,对NI USRP-2930无线接收平台接收的信号进行识别。实验结果表明,提出的算法在低信噪比下具有较高的识别率、实用性和有效性。     

基于奇异值分解的雷达信号脉内调制类型自动识别

针对低信噪比下传统方法识别雷达信号脉内调制类型准确率低的问题,提出了一种有效的脉内调制类型自动识别方法。该方法首先计算雷达信号的模糊函数,然后利用图像处理算法提取其奇异值特征,将奇异值特征矢量作为神经网络的输入对脉内调制类型自动识别。仿真表明该方法在0dB信噪比下,对常见脉内调制信号识别率均大于84%。该方法需要的特征维数少、分类器结构简单、识别率高、抗噪能力强。     

低信噪比条件下的调制方式识别

传统的调制方式识别方法通常假设接收信号是平稳随机过程,一般要在信噪比不低于10dB时才能取得较高的识别率。本文根据模拟调制信号的谱特性和谱相关特性,给出了低信噪比下的调制方式识别算法,理论分析和仿真结果表明,本文提出的算法,在低信噪比(3dB)条件下,仍然具有很高的识别率。     

基于近似对数似然比的数字调制信号自动识别算法

针对MPSK信号的调制识别问题,本文提出了一种新的近似最大似然比调制分类算法,采用平均似然比检测方法,通过对接收信号的离散化和对主要参数的简化近似,得到了离散情况下的近似分类统计量。仿真结果表明,依据信噪比条件,选择合适的离散化方案,可以得到高识别率与低运算量。     

一种简单高效的MPSK信号调制方式分类方法

文中主要针对多进制相移键控（MPSK）信号给出了一种在不需要对调制信号进行载波同步和码元同步的情况下，采用简单的MPSK信号的高次方谱特征对其进行类内分类的算法，对于信号是否经过基带成形处理对该算法不会产生任何影响。大量的仿真实验结果表明，在信噪比不低于-1dB的情况下，此算法的正确识别率能够达到100％。     

一种有效的脉内调制信号识别方法

文章在相位重构的基础上分析了各种常见脉内调制信号相位差分序列的特征,并给出了它们的识别方法。采用多重相位差分改善了算法对低信噪比环境的适应能力。本文还根据分析给出了脉内识别的系统框图,最后仿真验证了文中分析结论,给出了不同信噪比下各种调制信号的正确识别率。     

自适应编码调制的一种高效半盲检测算法

给出一种基于协议信息的自适应编码调制高效半盲检测算法,该算法同时采用信号多序列抽取和信号多频点滑动匹配两种方法,能够有效克服中频调制信号最佳采样点偏差和频率偏差的影响,可以准确高效地识别出信号类型、信道编码方式、调制类型。实验表明,该算法在低信噪比下就能达到很高的识别率,性能明显优于传统模式识别的检测算法,具有较好的实用前景。     

基于自适应小波消噪的数字调制识别优化算法

为了改善数字调制识别在低信噪比下的识别性能,该文提出了基于瞬时信息的自适应小波阈值消噪的调制识别优化算法。该方法采用自适应小波阈值消噪算法对瞬时信息进行消噪以提高瞬时信息的信噪比,并在已有的两个特征参数ap和df的基础上,改进了特征参数Ra和Ra,以降低判决门限设置的敏感度。仿真结果表明,即使在信噪比低达1 dB时,7种数字调制的成功识别率都达到96%以上。与已有算法相比,该优化算法具有实现简单、计算量小和极低信噪比下识别率高等优点。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its