ITO衬底上LiTaO3薄膜的制备与介电特性

用溶胶凝胶法在ITO衬底上制备了钽酸锂(LiTaO3)薄膜,利用XRD、SEM和AFM对薄膜的晶向、表面形态等作了表征;研究了不同溶剂对LiTaO3溶胶稳定性的影响和不同退火条件对LiTaO3薄膜结晶的影响;利用Al/LiTaO3/ITO结构,测试了薄膜的介电系数和介电损耗.结果表明:每层薄膜都晶化退火比交替使用焦化、结晶退火能生长出质量更好的LiTaO3薄膜;频率1KHz时,介电损耗约0.4,相对介电系数约53.并讨论了介电损耗增大的原因.     

Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing

Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing (FA) and rapid thermal annealing ( RTA),respectively. From the Raman spectra and scanning electronic microscope(SEM),it found that the thin films made by RTA had smooth and perfect structure,while the thin films annealed by FA had a higher degree of structural disorder.     

快速光热退火法制备多晶硅薄膜的研究

为了制备应用于太阳电池的优质多晶硅薄膜,研究了非晶硅薄膜的快速光热退火技术。先利用 PECVD 设备沉积非晶硅薄膜,然后放入快速光热退火炉中进行退火。退火前后的薄膜利用 X 射线衍射仪(XRD)和扫描电子显微镜(SEM)测试其晶体结构及表面形貌,用电导率设备测试其暗电导率。研究表明退火温度、退火时间对非晶硅薄膜的晶化都有很大的影响,光热退火前先用常规高温炉预热有助于增大多晶硅薄膜的晶粒尺寸和暗电导率。     

LSMCD技术制备PLT铁电薄膜的退火工艺研究

液态源雾化化学沉积(LSMCD)技术自1992年问世以来就引起了各国科学家的广泛关注。目前，已成功制备出了多种铁电薄膜。该文系统的分析了采用LSMCD技术制备PLT铁电薄膜在退火温度和退火方式的选择对其相结构的影响，在保证PbO不挥发的情况下，退火温度越高，薄膜的结晶越好；采用混合热处理(RCA)制备的薄膜晶粒尺寸较大，形成了连续致密的薄膜，而快速热处理(RTA)虽可以消除焦绿石相，但薄膜晶粒较小。     

ZnO缓冲层和退火处理对MgO薄膜结构的影响

采用直流反应磁控溅射法在Si衬底上引入ZnO缓冲层制备了沿(200)晶面择优取向生长的MgO薄膜,然后分别采用快速退火和常规退火两种不同的方式对MgO薄膜进行晶化处理。利用X射线衍射仪(XRD)以及原子力显微镜(AFM)研究了ZnO缓冲层以及两种不同的退火方式对MgO薄膜的结构和形貌的影响。结果表明:具有合适厚度的ZnO缓冲层可以显著地提高MgO薄膜的结晶质量。另外,与快速退火相比,常规退火处理后得到的MgO晶粒均匀圆润,有着较大的(200)衍射峰强度以及较小的表面粗糙度。     

纳米尺度压电薄膜PZT的结构特征和性能

采用改进的溶胶-凝胶(Sol-Gel)方法在Pt/Ti/SiO2/Si基片上制备锆钛酸铅(PZT)纳米晶薄膜,研究了不同的热处理方式对PZT薄膜的晶粒结构、尺寸及电学性能的影响。X-射线衍射(XRD)分析表明:传统的热处理方式更有利于得到具有一定择优取向性的PZT薄膜。原子力显微镜(AFM)显示:快速热处理方式使PZT薄膜的晶粒具有自形晶结构,晶粒的排布更为有序,从而改善了薄膜的致密性。阻抗分析仪的测试结果表明:经快速热处理的薄膜,漏电流大约比传统热处理处理的薄膜的漏电流降低了20倍左右。     

Solid phase crystallization of amorphous silicon on glass by thin film heater for thin film transistor (TFT) application

A new process for solid phase crystallization (SPC) of amorphous silicon (a-Si) using thin film heater is reported. With this localized Ti silicide thin film heater, we successfully crystallized 500 Å-thick a-Si in a few minutes without any thermal deformation of glass substrate. The size of crystallized silicon grain was abnormally big (30-40 μm). Polycrystalline thin film transistors (TFT) fabricated using this unique thin film heater showed better mobility than those of conventional ones by furnace annealing.     

一步溶液法制备有机-无机杂化钙钛矿薄膜

有机-无机杂化钙钛矿薄膜作为太阳电池的光吸收层,其薄膜的形貌、结构以及结晶程度等因素对电池的光电转换效率起到了决定性的作用,而薄膜的质量主要取决于制备工艺.采用一步溶液法制备了有机-无机杂化钙钛矿(CH3NH3PbI3)薄膜,主要分析了在氟掺杂氧化锡(FTO)导电玻璃、玻璃和多晶硅3种不同衬底上生长CH3NH3PbI3薄膜的形貌和结构的差异.结果表明,在FTO导电玻璃和玻璃衬底上生长的薄膜的晶粒尺寸和晶粒分布均匀,而在硅衬底上生长的薄膜的边缘晶粒尺寸大于中心处的晶粒,并详细分析了造成这种现象的原因.此外,在50℃的低温下对在FTO导电玻璃衬底生长的CH3NH3PbI3薄膜进行了不同时间的退火处理.实验结果表明,随着热处理时间的增加,晶粒尺寸也增加,但是合成的CH3NH3PbI3薄膜部分发生了分解.     

Bottom-gate poly-Si thin film transistors using XeCl excimer laserannealing and ion doping techniques

High mobility bottom-gate poly-Si thin film transistors (TFTs) have been successfully fabricated on a hard glass substrate using XeCl excimer laser annealing and ion doping techniques. The authors used an a-Si:H film which is deposited by a plasma-enhanced chemical vapor deposition (PECVD) as a precursor film, and then they crystallized the a-Si film by XeCl excimer laser annealing. The maximum field effect mobility and grain size obtained were 200 cm²/V-s (n-channel), and 250 nm, respectively. The poly-Si TFTs showed excellent transfer characteristics, and an ON/OFF current ratio of over 10⁶ was obtained. Successful control of the threshold voltage within 4 V using an ion doping technique is also demonstrated     

快速退火对Pt/BST/Pt电容器结构和性能的影响

采用脉冲激光沉积(PLD)法在Pt/Ti/SiO2/Si(001)基片上制备了Ba0.6Sr0.4TiO3(BST)薄膜,对Pt/BST/Pt电容器在空气中进行400℃快速退火(RTA)处理,研究了快速退火对Pt/BST/Pt电容器的结构和性能的影响。结果表明:快速退火虽然对BST薄膜的结晶质量影响较小,但却极大改善了Pt/BST/Pt电容器的电学性能。当测试频率为100kHz、直流偏压为0V时,介电损耗从快速退火前的0.07减小到0.03,介电常数和调谐率略有增加。快速退火后负向漏电流过大现象得到了明显抑制,正负向漏电流趋于对称,在300×103V/cm电场强度下,漏电流密度为4.83×10–5A/cm2。     

磁场退火对FePt/Ag薄膜磁性能的影响

采用磁控溅射法室温沉积获得FePt/Ag薄膜,然后在500℃下,于真空磁退火炉中对薄膜进行退火处理。利用XRD和振动样品磁强计(VSM),研究了磁场退火对薄膜结构和磁性能的影响。结果表明,500℃零磁场退火获得了矫顽力为0.763 4 MA.m–1、平均晶粒尺寸21 nm的L10-FePt薄膜。磁场提供了FePt成核生长的驱动力,0.8 MA.m–1磁场退火后FePt的平均晶粒尺寸为26 nm,矫顽力增大至0.804 3 MA.m–1。非磁性Ag的掺杂可有效抑制磁性FePt晶粒的团聚生长。     

Fabrication of CNTs/Cu composite thin films for interconnects application

Carbon nanotubes/copper (CNTs/Cu) composite thin films were fabricated by combined electrophoresis and electroplating techniques. Electrical properties and structure of both CNTs/Cu thin films and the reference pure Cu thin films were investigated after annealing at different temperatures. The sheet electrical resistance of CNTs/Cu films decreases faster than that of pure Cu films with increase of annealing temperature. The grain size of CNTs/Cu film becomes much larger than that of pure Cu film at the same annealing temperature. The peak relative intensity of Cu (1 1 1) plane in CNTs/Cu film was stronger than that of pure Cu film. CNTs/Cu composite thin films, with better electrical properties than that of conventional pure Cu thin films, have been fabricated by electrophoresis and electroplating deposition techniques.     

激光结晶a-Si:H SOI离子注入和快速退火

本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.     

退火温度对纳米ZnO薄膜结构与发光特性的影响

利用溶胶鄄凝胶法在硅衬底上制备了纳米ZnO薄膜。研究了热处理对ZnO薄膜的质量与发光性能的影响。结果表明,纳米ZnO薄膜具有六方纤锌矿结构,并且,随着退火温度的升高,ZnO的晶粒变大,c轴取向性变好,紫外发光强度增强。     

退火对ZnO薄膜结构及缺陷的影响

采用射频反应磁控溅射法在Si(111)基片上制备了高度c轴择优取向的ZnO薄膜,采用X线衍射(XRD)、X线光电子能谱(XPS)分析方法研究了退火对ZnO薄膜结构及缺陷的影响.结果表明,随着退火温度的上升,薄膜的择优取向及取向一致性更好,晶化程度增高,晶粒尺寸变大.退火使更多的Zn间隙原子回到晶格位置,并弥补薄膜中氧的...     

退火温度对PZT薄膜电容器性能的影响

通过简单的溶胶–凝胶法和快速热处理工艺,获得了在Pt/Ti/SiO2/Si基片上生长良好的PZT薄膜。制膜工艺简单,不需要回流和高温去结晶水,即可获得(111)择优取向的PZT薄膜。PZT薄膜经快速热处理在550~650℃退火,薄膜致密和平滑,均具有良好的铁电和介电特性,其最佳退火温度为600℃。     

CH3NH3PbI3钙钛矿太阳电池晶粒尺寸及光电性能调控

钙钛矿薄膜的晶粒尺寸对器件性能影响很大。采用湿润性不同的空穴传输层以及不同浓度的CH3NH3I（MAI）溶液,使用热退火和溶剂气氛退火的方法制备出CH3NH3PbI3薄膜及相应电池。测量了不同制备条件的钙钛矿薄膜的X射线衍射、扫描电子显微镜、光致发光谱,以及器件的电流密度-电压曲线。结果表明,溶剂气氛退火可以有效地增大薄膜的晶粒尺寸,提高器件的电流密度;较高浓度的MAI能将PbI2完全转化为CH3NH3PbI3,增大晶粒尺寸;不湿润的功函数更高的空穴传输层有利于电池效率的提高。制备了最高效率为13.3%的CH3NH3PbI3钙钛矿电池,为制备更大晶粒的钙钛矿薄膜与更高效率的钙钛矿太阳电池奠定了基础。     

Influence of rapid thermal and low temperature processing on theelectrical properties of polysilicon thin film transistors

In this paper rapid thermal processing (RTP) is studied for the crystallization and oxidation of deposited silicon layers. The purpose is to present and compare the results obtained by RTP, low temperature processing (LTP), or a combination of both, for the fabrication of polycrystalline silicon thin film transistors (poly-TFT's). The polysilicon and polyoxide are obtained by low thermal annealing, oxidation (LTA, O) and/or rapid thermal annealing, oxidation (RTA, O) of amorphous silicon films deposited from disilane at a temperature of 465°C. For the Si films annealed at 750°C or higher, using RTA, the grain average sizes are reduced whereas the electron/hole mobilities are increased. We suggest that there is a correlation between the optical extinction coefficient k (at λ=405 nm), the potential barrier height Φ_B due to the grains, and the field-effect mobility, μ_n,p, of the polysilicon film. This correlation indicates that the polysilicon film electrical properties depend not only on the grain size, but also on the crystalline quality of the grains. Moreover, it appears that the large amount of crystalline defects remaining in the so-called “grains” of the films annealed at 600°C (LTA) are partially annihilated when the films are annealed at higher temperatures. With regards to the TFT's electrical characteristics, the work suggests combining RT and LT steps to obtain TFT's with improved electrical performance     

PT种子层对PZT薄膜结晶及压电性能的影响

采用溶胶-凝胶法(Sol-Gel)在Pt/Si衬底上制备了PbTiO3 (PT)薄膜和Pb (Zrx,Ti1-x)O3(PZT)薄膜,研究了退火温度以及PT种子层对PZT薄膜结晶及压电性能的影响。X射线衍射(XRD)结果表明,制备的PZT薄膜为纯钙钛矿结构的多晶薄膜,有PT种子层的PZT薄膜晶粒尺寸更大,(110)面取向度更高,结晶性能更好;原子力显微镜(AFM)结果表明,制备的薄膜表面形貌比较平整、均匀、无裂纹;压电力显微镜(PFM)结果表明,压电力显微镜(PFM)结果表明,有PT种子层时,PZT薄膜的平均压电系数d33为128～237 pm/V,无PT种子层时平均压电系数d33为21～29 pm/V。在升温速率为10 ℃/s的退火条件下保温10 min时,随着退火温度的升高,PZT薄膜晶粒尺寸增大,粗糙度增大,(110)面取向度升高,平均压电系数d33增大。PT种子层能够有效的改善PZT薄膜的结晶性能和压电性能。     

镧钛酸铅铁电薄膜成膜机理探讨

采用快速热处理和传统热处理工艺对金属有机物热分解法制备的镧钛酸铅（ＰＬＴ）铁电薄膜进行了热处理，用扫描电镜对不同热处理工艺和不同厚度的ＰＬＴ薄膜的形貌进行了分析。结果表明，快速热处理工艺有利于活性高，较薄膜层的结晶和致密化反应；ＰＬＴ薄膜在传统和快速热处理过程中的形成过程与蒸发和溅射薄膜的核生长型薄膜的形成过程相似，薄膜的形成经历了岛状－网状－连续的过程，即随层数的增加，薄膜逐渐从不连续转变为连续，而热处理工艺只影响形成连续薄膜的厚度。