| 激光结晶a-Si:H SOI离子注入和快速退火 |
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| 引用本文： | 顾清,鲍希茂.激光结晶a-Si:H SOI离子注入和快速退火[J].半导体学报,1989,10(1):72-75. |
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| 作者姓名： | 顾清 鲍希茂 |
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| 作者单位： | 南京大学物理系 南京
(顾清)，南京大学物理系 南京(鲍希茂) |
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| 摘 要： | 本文对激光结晶a-Si∶H SOI结构砷注入和快速退火行为作了研究.a-Si∶H激光结晶有Lp-LCR,OD,FCR-2,FCR-1四个结晶区.用剖面电镜观察了结晶区的结构.扩展电阻测量表明Lp-LCR区中有两种扩散机制,即杂质在晶粒体内扩散和沿缺陷扩散.OD区中有三种扩散形式,除有上述两种以外,还有沿缺陷的扩散.首次比较了沿晶界和缺陷的扩散速度.
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| 关 键 词： | SOL结构 氢化非晶硅 扩散机制 |
Ion-Implantation and RTA in Laser Crystallized a-Si:H SOI |
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| Gu Qing/Departmemt of Physics,Nanjing University. NanjingBao Ximao/Departmemt of Physics,Nanjing University. Nanjing.Ion-Implantation and RTA in Laser Crystallized a-Si:H SOI[J].Chinese Journal of Semiconductors,1989,10(1):72-75. |
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| Authors: | Gu Qing/Departmemt of Physics Nanjing University NanjingBao Ximao/Departmemt of Physics Nanjing University Nanjing |
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| Abstract: | Ion-implantation and rapid thermal annealing (RTA) in laser crystallized a-Si:H SOI arestudied.Four kinds of crystallization zone in SOI structure,LP-LCR,OD, FCR-2 and FCR-1 have been observed.Their structures are analyzed by cross-sectional TEM.Spreading re-sistance measurements show that there are two diffusion mechanisms in LP-LCR,diffusionin grains along grain boundaries.There is another diffusion mechanism in OD, diffusionalong defects,besides the mechanisms metioned above.We have comparel for the first timethe diffusion velocity along grain boundaries with that along defects directly |
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| Keywords: | SOI struture Hydrogenated amorphous silicon Grain boundaries Diffusion mechanism Rapid thermal annealing |
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