PT种子层对PZT薄膜结晶及压电性能的影响

采用溶胶-凝胶法(Sol-Gel)在Pt/Si衬底上制备了PbTiO3 (PT)薄膜和Pb (Zrx,Ti1-x)O3(PZT)薄膜,研究了退火温度以及PT种子层对PZT薄膜结晶及压电性能的影响。X射线衍射(XRD)结果表明,制备的PZT薄膜为纯钙钛矿结构的多晶薄膜,有PT种子层的PZT薄膜晶粒尺寸更大,(110)面取向度更高,结晶性能更好;原子力显微镜(AFM)结果表明,制备的薄膜表面形貌比较平整、均匀、无裂纹;压电力显微镜(PFM)结果表明,压电力显微镜(PFM)结果表明,有PT种子层时,PZT薄膜的平均压电系数d33为128～237 pm/V,无PT种子层时平均压电系数d33为21～29 pm/V。在升温速率为10 ℃/s的退火条件下保温10 min时,随着退火温度的升高,PZT薄膜晶粒尺寸增大,粗糙度增大,(110)面取向度升高,平均压电系数d33增大。PT种子层能够有效的改善PZT薄膜的结晶性能和压电性能。

Effects of PT Seed Layer on Crystallization and Piezoelectric Properties of PZT Thin Films

Pb (Zrx,Ti1-x)O3 (PZT) and PbTiO3 (PT) thin films were fabricated on Pt/Si substrate by sol gel method.The effects of annealing temperature and PT seed layer on the crystallization and piezoelectric properties of PZT thin films are studied.X ray diffraction (XRD) analysis shows that PZT thin film is of polycrystalline phase with perovskite tetragonal structure.Compared with the PZT film without PT seed layer,PZT thin films with PT seed layer show larger grain size,stronger (100) orientation,and better crystallization.AFM analysis shows that the surface of PZT film is smooth,uniform and crack free.PFM analysis shows that the average piezoelectric coefficient d33 of PZT film with PT seed layer is 128～237 pm/V,and the average d33 of PZT film without PT seed layer is 21～29 pm/V.With increasing of annealing temperature,the grain size and surface roughness as well as the average piezoelectric coefficient of PZT films increases,and the (100) orientation with perovskite structure is preferred when the heating rate is 10 ℃/s and the soaking time is 10 min.PT seed layers can effectively improve the crystallization and piezoelectric properties of PZT thin films.