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Local thickness and composition analysis of TEM lamellae in the FIB
Affiliation:1. Oxford Instruments NanoAnalysis, Halifax Road, High Wycombe HP12 3SE, UK;2. Oxford Instruments NanoAnalysis, 10410 Miller Rd., Dallas, TX 75238, USA;1. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles Cedex, France;2. Laboratory of Computer Sciences, Paris 6 (LIP6), Systems On Chips Department, UPMC University, 4 place Jussieu, 75252 Paris Cedex 05, France;1. Le2i, UMR CNRS 6306, University of Burgundy, 9 Avenue Alain Savary, 21000 Dijon, France;2. Centre National d’Etudes Spatiales (CNES), 18 Avenue Edouard Belin, 31401 Toulouse, France;1. SAGE-ENISo, National Engineering School of Sousse, 4023 University of Sousse, Tunisia;2. Al Leith Engineering College, Umm Al-Qura University, Saudi Arabia;3. ISIM, University of Gabes, 6072 Gabes, Tunisia;4. ESTACA Research Center, 92532 Levallois Perret, Paris, France;5. GPM-UMR CNRS 6634, University of Rouen, 76801 Saint Etienne du Rouvray, France;1. Systems Integration Department, IMB-CNM (CSIC), Campus Universitat Autònoma de Barcelona (UAB), 08193 Bellaterra, Barcelona, Spain;2. BSH Home Appliances Group, Avda. Industria 49, Zaragoza 50016, Spain;1. IMS-Bordeaux, Université de Bordeaux – UMR 5218, 351 cours de la Libération, 33405 Talence, France;2. Information Technology Laboratory, Gottfried Wilhelm Leibniz Universität Hannover, Hannover, Germany;1. University of Vienna, Physics of Nanostructured Materials, Vienna, Austria;2. Materials Center Leoben Forschung GmbH, Leoben, Austria;3. Vienna University of Technology, Faculty of Technical Chemistry, Vienna, Austria
Abstract:High-resolution TEM image quality is greatly impacted by the thickness of the TEM sample (lamella) and the presence of any surface damage layer created during FIB–SEM sample preparation. Here we present a new technique that enables measurement of the local thickness and composition of TEM lamellae and discuss its application to the failure analysis of semiconductor devices. The local thickness in different device regions is accurately measured based on the X-ray emission excited by the electron beam in the FIB–SEM. Examples using this method to guide FIB–SEM preparation of high quality lamellae and to characterise redeposition are shown for Si and III–V semiconductor devices.
Keywords:FIB  TEM sample preparation  Thin film analysis
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