共查询到18条相似文献,搜索用时 140 毫秒
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使用半导体器件数值分析工具 DESSISE- ISE,对正向栅控二极管 R- G电流表征 NMOSFET沟道 pocket或halo注入区进行了详尽的研究 .数值分析表明 :由于栅控正向二极管界面态 R- G电流的特征 ,沟道工程 pocket或halo注入区的界面态会产生一个独立于本征沟道界面态 R- G电流特征峰的附加特征峰 .该峰的幅度对应于 pocket或 halo区的界面态大小 ,而其峰位置对应于 pocket或 halo区的有效表面浓度 .数值分析还进一步显示了该附加特征峰的幅度对 pocket或 halo区的界面态变化的敏感性和该峰的位置对 pocket或 halo区的有效表面浓度变化的敏感性 .根据提出的简单 相似文献
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本文完成了热载流子诱生MOSFET/SOI界面陷阱正向栅控二极管技术表征的实验研究。正向栅控二极管技术简单、准确,可以直接测得热载流子诱生的平均界面陷阱密度,从而表征器件的抗热载流子特性。实验结果表明:通过体接触方式测得的MOSFET/SOI栅控二级管R-G电流峰可以直接给出诱生的界面陷阱密度。抽取出来的热载流子诱生界面陷阱密度与累积应力时间呈幂指数关系,指数因子约为0.787。 相似文献
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报道了用新的正向栅控二极管技术分离热载流子应力诱生的SOI-MOSFET界面陷阱和界面电荷的理论和实验研究.理论分析表明:由于正向栅控二极管界面态R-G电流峰的特征,该峰的幅度正比于热载流子应力诱生的界面陷阱的大小,而该峰的位置的移动正比于热载流子应力诱生的界面电荷密度. 实验结果表明:前沟道的热载流子应力在前栅界面不仅诱生相当数量的界面陷阱,同样产生出很大的界面电荷.对于逐渐上升的累积应力时间,抽取出来的诱生界面陷阱和界面电荷密度呈相近似的幂指数方式增加,指数分别为为0.7 和0.85. 相似文献
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报道了用新的正向栅控二极管技术分离热载流子应力诱生的SOI-MOSFET界面陷阱和界面电荷的理论和实验研究.理论分析表明:由于正向栅控二极管界面态R-G电流峰的特征,该峰的幅度正比于热载流子应力诱生的界面陷阱的大小,而该峰的位置的移动正比于热载流子应力诱生的界面电荷密度. 实验结果表明:前沟道的热载流子应力在前栅界面不仅诱生相当数量的界面陷阱,同样产生出很大的界面电荷.对于逐渐上升的累积应力时间,抽取出来的诱生界面陷阱和界面电荷密度呈相近似的幂指数方式增加,指数分别为为0.7 和0.85. 相似文献
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Characterized back interface traps of SOI devices by the Recombination\|Generation (R\|G) current has been analyzed numerically with an advanced semiconductor simulation tool,namely DESSIS\|ISE.The basis of the principle for the R\|G current's characterizing the back interface traps of SOI lateral p\++p\+-n\++ diode has been demonstrated.The dependence of R\|G current on interface trap characteristics has been examined,such as the state density,surface recombination velocity and the trap energy level.The R\|G current proves to be an effective tool for monitoring the back interface of SOI devices. 相似文献
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Characterized back interface traps of SOI devices by the Recombination-Generation (R-G) curren: has been analyzed numerically with an advanced semiconductor simulation tool,namely DESSiS-ISE. The basis of the principle for the R-G current's characterizing the back interface traps of SOI lateral p+p-n+ diode has been demonstrated. The dependence of R-G cur rent on interface trap characteristics has been examined, such as the state density, surface recombination velocity and the trap energy level. The R-G current proves to be an effective tool for monitoring the back interface of SOI devices. 相似文献
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通过数值模拟手段,用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对R-G电流大小的影响规律.结果表明:无论在FD还是在PD SOI MOS器件中,界面陷阱密度是决定R-G电流峰值的主要因素,硅膜厚度和沟道掺杂浓度的影响却因器件的类型而异.为了精确地用R-G电流峰值确定界面陷阱的大小,器件参数的影响也必须包括在模型之中. 相似文献
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Sung Bae Park Young Wug Kim Young Gun Ko Kwang Il Kim Il Kwon Kim Hee-Sung Kang Jin Oh Yu Kwang Pyuk Suh 《Solid-State Circuits, IEEE Journal of》1999,34(11):1436-1445
A 0.25-μm, four-layer-metal, 1.5-V, 600-MHz, fully depleted (FD) silicon-on-insulator (SOI) CMOS 64-bit ALPHA1 microprocessor integrating 9.66 million transistors on a 209-mm2 silicon die has been developed leveraging the existing bulk design. FD-SOI technology is used because it has better immunity for dynamic leakage current than partially depleted SOI in high speed dynamic circuits without body contact. C-V characteristics of metal-oxide-silicon-oxide-silicon with and without source-drain junctions are described to explain the behavior of FD-SOI transistor. Race, speed, and dynamic stability have been simulated to reassure the circuit operation. Key process features are shallow trench isolation, 4-nm gate oxide, 30-nm co-silicide, 46-nm silicon film, and 200-nm buried oxide. The FD-SOI microprocessor runs 30% faster than that of bulk, and it passes the reliability and system test 相似文献
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Yo-Hwan Koh Min-Rok Oh Jong-Wook Lee Ji-Woon Yang Won-Chang Lee Hyung-Ki Kim 《Electron Devices, IEEE Transactions on》1998,45(5):1063-1070
A body-contacted (BC) SOI MOSFET structure without the floating-body effect is proposed and successfully demonstrated. The key idea of the proposed structure is that the field oxide does not consume the silicon film on buried oxide completely, so that the well contact can suppress the body potential increase in SOI MOSFET through the remaining silicon film between the field oxide and buried oxide. The junction capacitance of the proposed structure which ensures high-speed operation can also maintain that of the conventional thin-film SOI MOSFET at about 0.5 V. The measured device characteristics show the suppressed floating-body effect as expected. A 64 Mb SOI DRAM chip with the proposed BC-SOI structure has been also fabricated successfully. As compared with bulk MOSFET's, the proposed SOI MOSFET's have a unique degradation-rate coefficient that increases with increasing stress voltage and have better ESD susceptibility. In addition, it should be noted that the proposed SOI MOSFET's have a fully bulk CMOS compatible layout and process 相似文献
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M. Estrada A. Afzalian D. Flandre A. Cerdeira H. Baez A. de Lucca 《Microelectronics Reliability》2003,43(2):189-193
In this paper we first present the integration of amorphous silicon photodiodes with a fully depleted silicon on isolator (FD SOI) MOSFET circuit. Taking the advantage of the better subthreshold characteristic of FD SOI MOSFETs with respect to bulk devices, a very simple SOI circuit integrated with the amorphous silicon photodiode is presented to significantly improve the ratio of the circuit output current when the diode is illuminated to when it is not. The use of one additional reference source voltage to adjust the operating point of the photodiode, allows to obtain a very significant increase in this current ratio, much higher than what can be obtained using a simple diode. Circuit solutions used to amplify the diode current under illumination are usually more complicated and involve a capacitor or more transistors than the circuit we present. All the other properties of the photodetector, as its spectral characteristic and linear dependence of detection with light intensity are maintained. The circuit can also be used in conjunction with other circuits for further amplification and/or processing. 相似文献
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Xinnan Lin Chuguang Feng Shengdong Zhang Wai-Hung Ho Mansun Chan 《Solid-state electronics》2004,48(12):2315-2319
A simple process to fabricate double gate SOI MOSFET is proposed. The new device structure utilizes the bulk diffusion layer as the bottom gate. The active silicon film is formed by recrystallized amorphous silicon film using metal-induced-lateral-crystallization (MILC). While the active silicon film is not truly single crystal, the material and device characteristics show that the film is equivalent to single crystal SOI film with high defect density, like SOI wafers produced in early days. The fabricated double gate MOSFETs are characterized, which demonstrate excellent device characteristics with higher current drive and stronger immunity to short channel effects compared to the single gate devices. 相似文献
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The implementation of FinFET structure in bulk silicon wafers is very attractive due to low-cost technology and compatibility with standard bulk CMOS in comparison with silicon-on-insulator (SOI) FinFET. SOI and bulk FinFET were analyzed by a three-dimensional numerical device simulator. We have shown that bulk FinFET with source/drain-to-body (S/D) junctions shallower than gate-bottom has equal or better subthreshold performance than SOI FinFET. By reducing S/D junction depth, fin width scaling for suppression of short-channel-effects (SCEs) can be relaxed. On-state performance has also been examined and drain current difference between the SOI and bulk FinFET at higher body doping levels has been explained by investigating enhanced conduction in silicon-oxide interface corners. By keeping the body doping low and junctions shallower than the gate-bottom, bulk FinFET characteristics can be improved with no increase in process complexity and cost. 相似文献