Numerical Analysis of Characterized Back Interface Traps of SOI Devices by R-G Current |
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Affiliation: | Institute of Microelectronics, Peking University, Beijing 100871, China |
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Abstract: | Characterized back interface traps of SOI devices by the Recombination-Generation (R-G) curren: has been analyzed numerically with an advanced semiconductor simulation tool,namely DESSiS-ISE. The basis of the principle for the R-G current's characterizing the back interface traps of SOI lateral p+p-n+ diode has been demonstrated. The dependence of R-G cur rent on interface trap characteristics has been examined, such as the state density, surface recombination velocity and the trap energy level. The R-G current proves to be an effective tool for monitoring the back interface of SOI devices. |
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Keywords: | recombination-generation current interface traps SOI |
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