多能点X射线透射光栅的制作技术

针对X射线自支撑透射光栅在多能点单色成像光栅谱仪中的应用,采用电子束和光学匹配曝光、微电镀和高密度等离子体刻蚀技术,成功制备了周期为500nm、金吸收体厚度为350nm、占空比接近1∶1,满足三个能点成像需求的2000lp/mm X射线自支撑透射光栅。首先利用电子束光刻和微电镀技术制备金光栅图形,然后采用紫外光刻和微电镀技术制作自支撑结构,最后通过腐蚀体硅和感应耦合等离子体刻蚀聚酰亚胺完成X射线自支撑透射光栅的制作。在电子束光刻中,采用几何校正和高反差电子束抗蚀剂实现了对纳米尺度光栅图形的精确控制。实验结果表明,同一个器件分布的三块光栅占空比合理,栅线平滑,可以满足单能点单色成像谱仪的要求。     

啁啾光纤光栅相位掩模槽形控制新方法研究

在啁啾光纤光栅相位掩模的制作中,针对光刻胶光栅槽形要求比较高的问题,提出离子束刻蚀和反应离子束刻蚀相结合的方法,来实现对相位掩模槽形占宽比的控制.运用高级线段运动算法模拟分析刻蚀中的图形演化,用Ar离子束刻蚀对光刻胶光栅掩模形貌进行修正,然后采用CHF3反应离子束刻蚀,实验和模拟均表明,Ar离子束刻蚀能很好的改善掩模与基片交界处的基片侧壁形貌,使得在CHF3反应离子束刻蚀下能得到较小的占宽比.对槽形控制提供了有意义的实验手段.     

反应离子束刻蚀应用于光刻胶灰化技术研究

以AZl500光刻胶为例，将氧气作为工作气体的反应离子束刻蚀工艺用于光刻胶图形的灰化处理，以去除经紫外曝光-显影后光栅中的残余光刻胶。研究结果表明灰化速率有随束流密度呈线性增加的趋势。经过反应离子束刻蚀后，光栅槽底残余光刻胶被去除干净，同时线条的宽度变细，在一定程度上达到修正光刻胶光栅线条占空比的目的。用原子力显微镜检测，无光刻胶的K9基片表面在灰化工艺前后其粗糙度无明显变化。该工艺具有良好的可控性，解决了在厚基片上制作大口径衍射光学元件时残余光刻胶的去除问题。     

离子束刻蚀位相型Ronchi光栅研究

本文报道了采用紫外光刻和离子束刻蚀方法制作位相型Ｒｏｎｃｈｉ光栅的工艺技术，并对其衍射特性进行了讨论，同时给出实验结果。     

离子束刻蚀位相型Ronchi光栅研究

本文报道了采用紫外光刻和离子束刻蚀方法制作位相型Ｒｏｎｃｈｉ光栅的工艺技术，并对其衍射特性进行了讨论，同时给出实验结果。     

用于ICF驱动器的色分离光栅的制作

介绍了色分离光栅的设计原理,并对其制作工艺进行了研究.用套刻法以能量为450 eV、束流密度为80 mA/cm2、30°入射角的离子束对100 mm×100 mm石英基片进行刻蚀,制作出了周期为300 μm色分离光栅.实验测得零级次上3ω(351 nm)光的归一化衍射效率达到了91.9%.结果表明,这套工艺方法在制作高衍射效率的CSG是可行的,并且具有刻蚀图形分辨率高、侧壁较陡等优点,为进一步制作高衍射效率的色分离光栅提供了参考.     

离子束刻蚀正交位相型Ronchi光栅研究

本文报道了采用紫外光刻和离子束刻蚀方法制作正交位相互Ｒｏｎｃｈｉ的工艺技术,并讨伐春衍射效率,给出公式及实验结果。     

离子束刻蚀双频光栅的实验研究

本文利用离子束在玻璃上刻蚀出双频光栅,研究了光栅掩模制作中曝光量和显影条件,离子束刻蚀工艺等因素对光栅衍射效率的影响,并给出一些实验结果。     

基于光刻胶热熔法的全息光栅表面粗糙度平滑处理

根据表面热动力学原理提出了一种成本低廉、制作周期短、易于实现的光刻胶热熔法,阐述了光刻胶热熔法的基本原理,探讨了光刻胶热熔对光刻胶光栅表面刻槽形状的影响。实验中,分别对经过和未经过热熔处理的光刻胶光栅做了离子束刻蚀。结果表明,利用表面张力作用可使熔融状态下的光刻胶光栅刻槽表面变得平滑,粗糙度降低,并且成功地在K9玻璃基底上得到了槽形较好的全息光栅。     

SOI亚微米波导光栅的设计与制作

报道了SOI基亚微米小尺寸波导光栅器件的设计、制作与测试结果。提出了波导与光栅同步制作的方案,避免了套刻,节约了成本。实验中采用电子束光刻(EBL)、感应耦合等离子体(ICP)刻蚀等先进半导体工艺技术,结合图形补偿等技术手段,完成了亚微米波导光栅的制作。光栅周期为350nm,占空比16∶19。采用该光栅做反射镜,制作了法布里-珀罗(F-P)谐振腔,经测试得到了与模拟相吻合的结果,峰谷比达到11dB。     

纳米压印制作半导体激光器的分布反馈光栅

分布反馈(DFB)光栅的制作是半导体激光器芯片的关键工艺,通过纳米压印技术在InP基片表面涂覆的光刻胶上压印出DFB光栅图形,并分别通过湿法腐蚀和干法刻蚀技术将光栅图形转移到InP基片上。所制作的DFB光栅周期为240nm(对应于1 550nm波长的DFB激光器),光栅中间具有λ/4相移结构。采用纳米压印技术制作的DFB光栅相对于通常双光束干涉法制作的光栅具有更好的均匀性以及更低的线条粗糙度,而且解决了双光束干涉法无法制作非均匀光栅的技术难题。相对于电子束直写光刻法,采用纳米压印技术制作DFB光栅具有快速与低成本的优势。采用纳米压印技术在InP基片上成功制作具有相移结构的DFB光栅,为进一步进行低成本高性能的半导体激光器芯片的制作奠定了良好基础。     

Freestanding GaN Resonant Gratings at Telecommunication Range

We theoretically and experimentally demonstrate a freestanding gallium nitride (GaN) resonant grating at telecommunication range. The optical responses of the freestanding GaN resonant gratings are analyzed by the rigorous coupled-wave analysis method. The freestanding GaN resonant gratings are validated on 850-nm freestanding membrane by a combination of electron beam lithography, fast atom beam, etching, and deep reactive ion etching. The polarization properties of such freestanding GaN resonant gratings are demonstrated in reflectance measurements, and the experimental results correspond well to the theoretical model. The strong resonant peaks show a clear dependence on the duty ratio under transverse magnetic polarization, and a promising resonant peak of the fabricated freestanding GaN resonant grating, in which the grating period $P$ is 1500 nm, the grating height $h$ is 230 nm, and the grating width is 280 nm, is observed at 1516.4 nm with a full-width at half-maximum of 4 nm.      

微米亚微米矩形光栅衍射特性的实验研究

本文应用微电子制板技术、电子束扫描曝光和离子刻蚀技术研制成功微米、亚微米级宽度的矩形光栅结构，并对其进行了衍射特性的研究。实验测试数据表明了当光栅的周期接近使用的照明光的波长时，具有明显的矢时衍射特性。     

Investigation of high-efficiency surface-emitting lasers withblazed grating outcouplers

Grating outcouplers for use in grating coupled surface emitting semiconductor lasers were investigated. For this purpose, horizontal cavity InGaAs-AlGaAs laser oscillators, each integrated with one detuned grating outcoupler, were fabricated using electron beam lithography and chemically assisted ion beam etching. Outcouplers with gratings of both rectangular and blazed profile as well as of different toothwidth-to-period ratios were fabricated and evaluated. Superior differential quantum and surface emission efficiencies of 56% and 84%, respectively, were measured for lasers with optimized blazed outcouplers. This shows that efficiencies comparable to those of conventional edge emitting lasers can be achieved. The measured surface emission efficiencies were also compared with predictions from a theoretical grating analysis     

Fabrication of second-order gratings for 1.55 μm DFB lasersusing deep UV lithography

Second-order gratings for 1.55 μm DFB lasers have been fabricated on InP substrate using contact deep UV (220 nm) lithography. Localised gratings with a 0.48 μm pitch were clearly resolved in PMMA photoresist and then transferred in InP by wet chemical etching     

Fabrication of high aspect ratio gratings for X-ray imaging

Grating-based X-ray imaging system is an important tool to investigate the inner structure of thick samples. The key components of the system consist of three golden gratings. The high aspect ratio gratings are fabricated using the SU-8 material. Considering the grating linewidth broadening varies with exposure dose, the relationship between linewidth broadening and exposure dose is studied experimentally. A series of gratings with different periods and different duty cycles are designed by optimizing the linewidth and exposure dose. Finally, the gratings are successfully fabricated by combining UV lithography and electroplating.     

Circular grating coupled DBR laser with integrated focusing outcoupler

We report on the fabrication and operation of a circular grating coupled, AlGaAs-InGaAs surface-emitting distributed Bragg reflector (DBR) SQW laser with an integrated focusing outcoupler. Electron beam lithography and reactive ion beam etching were used to fabricate the laser with a first-order resonant grating for optical feedback and a separate detuned, chirped second-order grating for outcoupling and focusing the beam.