一种具有三阻带特性的超宽带天线的设计与研究*

提出了一种紧凑型共面波导馈电的具有三阻带特性的超宽带天线。所设计天线的基本几何结构由共面波导(CPW)馈电线、菱形辐射贴片和矩形宽缝隙组成。通过在辐射贴片上刻蚀一个U型槽,以及在共面波导的接地面上增加两对L型的寄生旁枝结构来实现天线的三陷波特性。天线尺寸为32mm×32mm×0.508mm。仿真和实验结果表明,该天线在2.6~11.5GHz的频段内电压驻波比小于2,在3.15~3.80GHz、5.20~5.80GHz和8.2~8.7GHz三个频段内具有陷波特性,分别有效阻隔了Wi MAX系统、WLAN系统和ITU 8GHz频段信号对于超宽带(UWB)系统的干扰。在除三个阻带频段外的其余UWB工作频段范围内,具有良好的辐射方向特性和稳定的增益。仿真结果和实验结果表现出良好的一致性。     

一种共面波导馈电的双陷波渐变槽天线

为了滤除WIMAX(3.3～3.8 GHz)和WLAN(5.125～5.825 GHz)窄带信号对超宽带系统的干扰,该文提出一款共面波导馈电的小型化双陷波渐变槽天线。共面波导结构可以有效地扩展天线的带宽,实现对整个UWB(3.1～10.6 GHz)频段的全覆盖。通过在天线的馈线上开L型缝隙和在辐射贴片上开一对E字型缝隙的方法,有效实现了在3.15～3.97 GHz和4.94～6.05 GHz频段的双陷波特性,能够抑制WIMAX和WLAN对超宽带系统的干扰。该天线结构简单紧凑,尺寸非常小,仅为40 mm×18 mm×0.813 mm。仿真和实测结果表明该天线在超宽带波段内具有良好的陷波特性、增益特性,可以应用于小型化超宽带系统中。文中方法对于陷波渐变槽天线的研究具有一定的借鉴意义。     

一种共面波导馈电的三阻带超宽带天线设计与研究

设计了一种共面波导馈电的超宽带天线(UWB),该天线的辐射体和地板分别由具有渐变结构的类圆辐射贴片和梯形组成,具有良好的宽带阻抗匹配特性。通过在贴片的不同位置上嵌入3种不同形状的缝隙,实现了天线的3陷波特性。并利用HFSS 12软件对所设计的天线进行仿真测试,仿真计算和实测结果表明,该天线在WiMax(3.3～3.7G)、Wlan(5.15～5.825GHz)以及ITU(8.025～8.4GHz)3个频段内具有良好的陷波特性,并且该天线在其它通带频段具有良好的辐射特性和稳定的增益。天线的尺寸仅有25mm×29mm×1mm,利于与微波器件的集成。     

一种新型的超宽频天线的设计

提出了一种微带馈电的新型超宽频的天线,该天线印刷在覆铜介质基板上,介质基板尺寸为30.0 mm×35.0 mm×1.6 mm,材料是介电常数为4.4的FR4介质,利用仿真软件HFSS对天线参数进行仿真和优化.通过在微带面上开缝,可实现天线频带宽度(回波损耗S11＜-10 dB)2.6～11.5 GHz,相对带宽达126％.结果表明,该设计天线不仅满足超宽带要求,且结构简单,体积小,适合在超宽带天线(UWB)通信中应用.     

一种基于遗传算法的超宽带天线自动设计方法

提出了一种基于遗传算法的超宽带天线的自动设计方法,并利用此方法设计了一种紧凑型共面波导馈电超宽带天线。所设计的天线采用印刷电路板上的共面波导(CPW)进行馈电,利用遗传算法对天线的贴片形状轮廓进行自动化设计和优化,最后得到一种新颖的UWB 印刷缝隙天线。天线尺寸为32mm′32mm′0. 787mm。仿真结果和实验结果表现出良好的一致性。实验结果表明,该天线在2. 89 ~12. 6GHz 的频段内电压驻波比小于2,在整个UWB 工作频段范围内有稳定的增益和良好的辐射方向特性。     

一种小型化双陷波可重构UWB天线设计

提出了一种小型化的双陷波可重构超宽带(ultra wide band, UWB)天线,通过在辐射贴片上刻蚀大、小两个C形槽,实现5G (3.3~4.4 GHz)/WiMAX (3.3~3.6 GHz)和WLAN (5.150~5.825 GHz)两个频段的陷波. 采用两个PIN二极管跨接在C形槽上,通过控制PIN二极管的通断状态,在两个频段上实现陷波可重构. 为了实现小型化,天线采用削顶圆形结构的辐射贴片,并将C形槽设计为嵌套结构,天线最终尺寸为18.0 mm×19.5 mm. 仿真与测量结果表明:天线可以在UWB、两种单陷波和双陷波共四种状态下工作,UWB频段为3.1~11.0 GHz,两个单陷波频段分别为3.2~4.9 GHz、5.2~6.0 GHz,双陷波频段为3.25~4.75 GHz和5.3~6.1 GHz. 天线的最大增益为2.8 dBi,具有良好的辐射特性.     

一种基于微带槽天线的带阻性UWB天线的研究

提出了一种新颖的小型平面超宽带天线。该天线由微带槽天线的基本结构变形而来,为获得超宽带的频率特性,设计时馈电微带采用了圆弧形调谐枝节,金属底板的开槽设计成对称多边形之后通过数值计算获得最佳的天线几何尺寸。通过HFSS仿真和测试设计了一种频率覆盖3.1～10.6 GHz的超宽带UWB天线,其对包含在超宽带频段范围内的民用频率范围有一定的滤除作用,结构简单并且驻波特性良好,方向图具有准全向性。     

超宽带阶梯形微带单极子天线的设计与研究

针对当前已有超宽带（ultra-wideband, UWB）微带单极子天线带宽窄、尺寸大等缺陷,设计了一款小型化UWB阶梯形微带单极子天线,采用开槽的矩形辐射贴片、阶梯形微带馈电线和缺陷地面结构(defected ground structure, DGS)实现良好的UWB特性. 对天线的回波损耗、电压驻波比（voltage standing wave ratio, VSWR）、辐射方向图及增益进行了仿真计算和优化设计,实测显示,天线的工作频段为2.6～22.1 GHz,增益最大值为12.9 dBi,仿真和实测结果基本吻合. 所设计天线结构简单、覆盖频率广、尺寸小、工作频带内具有良好的辐射特性,表明该天线适用于各种UWB通信系统中.     

四元超宽带高隔离MIMO槽天线的设计

提出了一款基于FR4的共面波导(CPW)馈电四元超宽带(UWB)高隔离MIMO天线。该天线由4个单元槽天线组成,天线尺寸为65 mm×65 mm×0.8 mm。通过采用缺陷地结构和切角的方式实现了天线的超宽带特性。单元天线相互垂直放置实现了极化分集,同时在天线中间加载隔离栏栅结构,增加了天线的隔离度。对天线进行加工测试,测试结果能覆盖2.86～11.1 GHz并在频段内隔离度大于20 dB,天线具有高隔离、超宽带和较低的包络相关系数(ECC<0.006)的特点。天线采用(CPW)的馈电形式,更易应用于集成电路中,适用于各种超宽带系统。     

共面波导馈电的三陷波超宽带天线的设计

设计了一种共面波导馈电的三陷波超宽带天线。所设计的天线尺寸为30mm×30mm×1.8mm,印刷在介电常数为4.4的FR4介质基板上。通过分别在辐射贴片上加载"哑铃"型缝隙和在共面馈线上加载不对称"U"型缝隙以及共面地板上加载矩形缝隙来实现三陷波特性。利用高频仿真软件HFSS进行仿真、分析和优化,最终实现天线在2.20～11.82GHz的频段内,除了在3.52～3.80GHz、4.60～5.60GHz和7.62～8.30GHz具有陷波特性,回波损耗大于-10dB,则其他频带回波损耗小于-10dB,且具有陷波频带可调的优点。天线能够避免分别来自WiWAX系统、WLAN系统和X波段信号的干扰,同时在超宽带(UWB)天线的通带内能实现良好的远场辐射特性。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.