基于简单方向场的指纹中心点快速检测方法

指纹中心点周围分布着大量的可以直接识别的特征信息,本文提出了一种检测指纹中心点的快速简单的算法,利用基于块的指纹方向场,二值化后得到简单方向场,基于这种简单方向,可以定位指纹奇异点的所在的块,在由指纹预处理后细化图像,可以快速精确定位指纹中心点所在的位置。     

基于方向图分布及中心点信息的指纹分类算法

在深入研究现有指纹分类算法的基础上,提出了一种基于方向图及中心点信息的指纹分类算法.不同于以往利用core点和delta点进行分类,该算法根据指纹图像的中心点位置对方向图进行区域分割,通过各区域方向码之间的计算近似实现方向滤波,由方向滤波值进行分类.指纹图像大致可分为拱型、左箕型、右箕型和漩涡型4种.该算法为匹配算法提供了指纹类型信息,实验结果表明取得了较好的效果.     

基于指纹分类的模式匹配

深入研究了指纹匹配算法.利用指纹分类获得的信息来进行指纹匹配,实现了一种基于中心点和三角点的快速点模式指纹匹配算法,成功地解决了指纹匹配中的图像旋转、平移和形变不变性问题,并具有良好的快速性.该方法以待识和模板指纹图像的中心点为匹配参考点,并根据它们的位置与方向信息来计算旋转和平移参数.然后将待识图像相对于模板图像进行旋转和平移,进而进行点模式匹配.     

一种改进的指纹分类方法

指纹分类可以大大减少在指纹数据库中的匹配次数,缩短匹配时间。本文在指纹块方向场的基础上,利用其方向方差进行滤波,得出各奇异点的连接路径,并结合核心点与此路径形成一种改进的指纹分类方法。该方法以指纹块方向场为基础,符合指纹分类的全局思想,而非关注于细节特征,并简化计算。经过方向方差滤波后的指纹图像不仅可以利用奇异点的相对位置进行指纹分类,而且克服了奇异点丢失的弊端。本文针对滤波后的图像特征,提出了基于方向方差滤波的分类算法,通过实验验证了本算法的有效性。     

指纹图像质量综合评估方法

提出一种基于3个评估因子(前景比重、Gabor滤波特征值和指纹图像中心点位置)的指纹图像综合评估方法.为此,先将指纹图像分成若干ω×ω图块,计算每一图块内各像素的方向数并由此得出相关参数决定前景比重因子;再对每一图块进行8方向Gabor滤波,计算滤波结果的方差而得到Gabor滤波特征值因子;根据指纹图像相邻图块方向变化得到中心点位置因子;加权平均3个评估因子得到指纹图像质量评估结果.实验证明,该方法能准确有效地评估指纹图像的质量.     

基于Matlab的Sobel算子的指纹中心点定位

为了提高指纹特征点的提取效率,经过反复试验认识到正确定位判断指纹中心点具有重要的意义.通过研究指纹中心点的特征,将指纹图像的点方向图以及直方图与Sobel算予结合,提出了一种新的指纹中心点定位方法,并在Mat-lab下进行仿真.实验证明,该算法编程简单,中心点的定位准确,具有较高的可行性.     

基于Log Gabor滤波和不变矩的指纹识别

文中提出了基于八个方向的Log Gabor滤波和不变矩的指纹匹配算法,遵循找中心点、分扇区、归一化、八个方向的Log Gabor滤波、指纹特征提取、加权混合匹配算法的步骤,能较好的定位指纹,且能解决指纹平移变换的问题,最大可能的容忍指纹的部分缺失和关键点的遗漏,具有较好的容错率。此外,该指纹匹配算法具有准确性高,可移植性强的特点,使其可以在很多领域得到广泛应用。     

基于中心点定位的指纹匹配算法研究

指纹识别算法是自动指纹识别系统的核心技术,基于细节匹配的算法是广泛采用的算法,但是其识别率受到中心点定位精度的限制。借鉴基于滤波的指纹识别算法的中心点识别方法,解决基于细节匹配的指纹识别算法的中心点匹配问题。对实际指纹传感器采集的指纹测试的结果表明,该指纹识别算法的识别率得到提高,具有一定的实用性。     

一种基于中心点的指纹匹配算法的研究

本文提出了一种指纹识别的特征点匹配算法,该算法是在Xiping Luo的算法的基础上经过改进而得到的.该算法首先通过指纹的中心点来确定指纹匹配时的参考点,指纹的中心方向为初始方向,在此基础上将所有的特征点用极坐标表示,对指纹模板特征点和输入指纹特征点实行归一化.其次,在匹配过程中,采用了一个可变限制框,以适应指纹的非线性变化.此外,本算法采用只对有效区内的指纹特征点进行比对来提高指纹识别的鲁棒性,对指纹中心偏移的输入图象有较好的识别效果.通过对指纹库中的指纹图像做实验,结果表明该算法速度快,精度高,更适用于实时指纹识别系统.     

基于非均匀采样和方向扩散的指纹图像压缩感知

提出了一种新的指纹图像压缩感知方法,采样点比传统压缩感知(CS)方法更少。提出了一种交替使用高倍采样块和低倍采样块的非均匀采样方案。首先,根据从指纹图像训练得到的冗余字典,利用正交匹配追踪(OMP)算法恢复初始图像。然后,根据方向扩散法用高质量的低倍采样块来提升高倍采样块的质量。实验结果表明,该方法显著优于两种现有的知名压缩感知方法。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-