硫钝化GaP(001)表面的结构及电学性质研究

基于第一性原理的密度泛函理论,分析了覆盖度为1 ML(monolayer)的硫吸附在磷截止和镓截止的GAP(001)(1×2)表面的结构和电学属性.能量计算表明,最稳定的吸附模型均是SHB ST4,镓和磷二聚物都被断开,周期单元由(1×2)变成(1×1),硫原子吸附在桥位置,Ga-S键比P-S键更稳定.电学性质分析可知,硫吸附在镓截止GaP表面后能隙中的表面态大幅度减少,而吸附在磷截止的表面时表面态并没有减少且在0.74 eV处多了一个新峰,硫吸附在镓截止表面后的态密度分布与实验结果吻合很好.因此,1 ML的硫吸附在GAP(001)面时表面上最主要形成Ga-S键.     

用高分辨电子能量损失谱方法（HR—EELS）研究铁电薄膜

本文主要利用扫描透射电镜下的高分辨电子能量损失谱方法研究BaTiO3（10nm）／SrTiO3（50nm）铁电多层薄膜和高介电Y2O3／Si（001）结构心的界面化学反应及缺陷形成。在BaTiO3／SrTiO3多膜中，选区电子衍射图像表明BaTiO3薄层的极化方向垂直于基底表面。与体材料相比，BaTiO3薄层的晶格常数在ab方向变短而沿c轴伸长，这表明了错配张力的存在。BaTiO3层的上下两界面由于错配张力的松弛而具有不同的微结构。电子能量损失谱表明，TiL23吸收边的晶体场分裂对错配张力的松弛非常敏感，     

PTC热敏电阻的现状与发展趋势(续一)

基于对1995年以来,国内外PTC热敏电阻的研究,介绍了PTC热敏电阻用原料(BaCO3、TiO2、BaTiO3、SrCO3、PbO、Pb3O4、SrTiO3、PbTiO3、Y2O3、Nb2O5、CaCO3、SiO2等);材料(BaTiO3系、V2O3系及高分子);生产技术(瓷粉制造、烧成、芯片制造、质量评定、理化分析、片式PTC生产);重点产品(消磁、马达启动、限流及加热等用)以及基础研究(相变应力模型、表面势垒模型)等方面的现状及今后的发展趋势。     

PTC热敏电阻的现状与发展趋势

基于对1995年以来,国内外PTC热敏电阻的研究,介绍了PTC热敏电阻用原料(BaCO3、TiO2、BaTiO3、SrCO3、PbO、Pb3O4、SrTiO3、PbTiO3、Y2O3、Nb2O5、CaCO3、SiO2等);材料(BaTiO3系、V2O3系及高分子);生产技术(瓷粉制造、烧成、芯片制造、质量评定、理化分析、片式PTC生产);重点产品(消磁、马达启动、限流及加热等用)以及基础研究(相变应力模型、表面势垒模型)等方面的现状及今后的发展趋势。     

PTC热敏电阻的现状与发展趋势(待续)

基于对1995年以来,国内外PTC热敏电阻的研究,介绍了PTC热敏电阻用原料(BaCO3、TiO2、BaTiO3、SrCO3、PbO、Pb3O4、SrTiO3、PbTiO3、Y2O3、Nb2O5、CaCO3、SiO2等);材料(BaTiO3系、V2O3系及高分子);生产技术(瓷粉制造、烧成、芯片制造、质量评定、理化分析、片式PTC生产);重点产品(消磁、马达启动、限流及加热等用)以及基础研究(相变应力模型、表面势垒模型)等方面的现状及今后的发展趋势.     

PTC热敏电阻的现状与发展趋势(续二)

基于对1995年以来,国内外PTC热敏电阻的研究,介绍了PTC热敏电阻用原料(BaCO3、TiO2、BaTiO3、SrCO3、PbO、Pb3O4、SrTiO3、PbTiO3、Y2O3、Nb2O5、CaCO3、SiO2等);材料(BaTiO3系、V2O3系及高分子);生产技术(瓷粉制造、烧成、芯片制造、质量评定、理化分析、片式PTC生产);重点产品(消磁、马达启动、限流及加热等用)以及基础研究(相变应力模型、表面势垒模型)等方面的现状及今后的发展趋势。     

BaTiO3陶瓷中Nb2O5-Zn0.8Mg0.2TiO3的掺杂效应

研究了BaTiO3-Nb2O5-Zn0.8Mg0.2TiO3系统的介电性能及微观性能。SEM和XRD分析发现,在掺杂x(Nb)=1%的BaTiO3陶瓷中,Zn0.8Mg0.2TiO3的固溶度小于4%。Nb2O5和Zn0.8Mg0.2TiO3用量均为1%时,BaTiO3陶瓷为赝立方相结构,当x(Nb)>2%时,陶瓷样品(002)和(200)衍射峰相互分开,研究表明,BaTiO3陶瓷为四方相,且随着Nb用量增加,四方率增强。此外,Nb用量增加还使BaTiO3陶瓷室温介电常数降低,而同时居里点升高。当x(Nb)=2%和x(ZMT)=1%时,在空气中于1 180℃下烧成的BaTiO3陶瓷材料的主要性能指标为:298 K时介电常数2ε98 K=2 004,介电损耗tanδ=0.84%,密度ρ=1.4×1012Ω.cm,-55~ 150℃,电容量温度变化率△C/C≤±15%。     

锐钛矿型TiO2(101)面吸附CO2分子的光学气敏传感机理

对金属氧化物光学气敏传感材料TiO2的探索与应用是当前研究的热点问题。采用基于密度泛函理论(DFT)中的平面波超软赝势方法, 模拟计算CO2分子在锐钛矿型TiO2(101)表面的吸附行为, 对吸附能, 吸附距离, 电子态密度以及光学性质进行分析。结果表明: CO2分子在含O空位表面的吸附效果优于无氧空位表面, 且表面O空位的浓度越高, 吸附效果越明显;分子平行于表面放置模型的吸附能为正值, 吸附后的结构稳定, 且以O端吸附为主, 为此, 分子平行于表面放置O端吸附于含两个O空位表面为最可能吸附模型;对电子态密度分析发现, 当最佳模型吸附稳定后, 含O空位表面为P型杂质, 又有CO2分子中的2p电子掺入, 在费米能级附近出现新峰值, 改善了TiO2材料的光学性质, 体现出较好的光学气敏传感特性。     

EBCMOS钝化层表面残气吸附特性

基于密度泛函理论，研究了电子轰击互补金属氧化物半导体(EBCMOS)钝化层表面的残气吸附机制，并分析其电学特性。结果表明，以Al₂O₃钝化层为例，真空腔内残余气体H₂在Al₂O₃不同表面的吸附为物理吸附，在(001)面的吸附距离最大，吸附强度最低，电荷转移最少。对比CO,N₂,CO₂,H₂O等残余气体分子在(001)表面的吸附结果发现，(001)面对残气分子的吸附均为物理吸附，(001)面相比于其他表面，对残余气体分子有更好的抑制作用，所生成钝化层能提高EBCMOS器件电子倍增层的电荷收集效率。研究结果对研制寿命长而稳定的EBCMOS器件具有理论指导意义。     

PZT/NFO/LSMO多层磁电外延薄膜微观结构研究

用脉冲激光沉积法在(110)取向的SrTiO3(STO)单晶衬底上制备了Pb(Zr0.52Ti0.48)O3/NiFe2O4/La0.7Sr0.3MnO3(PZT/NFO/LSMO)磁电复合外延薄膜,并用X射线衍射和透射电镜技术研究了外延薄膜的物相和显微结构。原子力显微镜结果表明PZT、NFO和LSMO薄膜表面均平整,晶粒尺寸分布均匀,表面粗糙度分别为1.8,1.7和0.2 nm。X射线衍射、选区电子衍射和高分辨透射电子显微镜(HRTEM)测试结果均证明各层薄膜沿(110)STO衬底外延生长,其外延关系为(110)PZT//(110)NFO//(110)LSMO//(110)STO和[001]PZT//[001]NFO//[001]LSMO//[001]STO。HRTEM结果显示,NFO/LSMO界面和LSMO/STO界面平整外延性好,无缺陷,而PZT/NFO界面较粗糙;NFO薄膜表面呈锯齿状,锯齿状面为立方NFO的能量最低{111}面,而PZT薄膜表面呈岛状,进一步的显微结构分析认为PZT薄膜为层状-岛状生长模式。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.