共查询到19条相似文献,搜索用时 687 毫秒
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针对金属互连系统上的热点将对集成电路芯片的性能和可靠性产生重大的影响,详细讨论了ULSI金属互连系统上的热点位置和温度分布模型,并通过该模型比较了不同通孔直径和高度情况下,金属互连系统上的热点位置和温度的差别。结果表明,通孔直径和高度对金属互连系统上的热点有重大的影响。 相似文献
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一种新型的集成电路金属连线温度分析解析模型 总被引:4,自引:0,他引:4
研究了金属连线上的焦耳热对连线温度的影响,进而提出了一种新型的集成电路多层金属连线上的温度模拟器(LTem).该模拟器采用一种相对简单的热学解析模型,详细考虑了通孔效应以及边缘效应对温度分布的影响.模拟结果表明,考虑了通孔效应以及边缘效应之后,金属连线上的温度分布情况有了较大程度上的降低,LTem可以得到更贴近实际情况的金属连线温度分布情况 相似文献
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研究了金属连线上的焦耳热对连线温度的影响,进而提出了一种新型的集成电路多层金属连线上的温度模拟器(LTem).该模拟器采用一种相对简单的热学解析模型,详细考虑了通孔效应以及边缘效应对温度分布的影响.模拟结果表明,考虑了通孔效应以及边缘效应之后,金属连线上的温度分布情况有了较大程度上的降低,LTem可以得到更贴近实际情况的金属连线温度分布情况. 相似文献
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ULSI中铜互连线通孔电热性能的数值模拟 总被引:2,自引:0,他引:2
利用三维有限元模型对Cu互连线通孔进行了电流密度、温度和温度梯度的分布进行了模拟,比较了具有不同阻挡层材料的通孔内的电流密度、温度和温度梯度的分布.对于同一阻挡层材料,进行了不同通孔倾斜角的模拟.模拟结果指出,通过优化通孔倾斜角和优选阻挡层材料可有效地改善通孔内的电流密度和温度的分布,提高ULSI通孔互连的可靠性,这对通孔的设计提供了有益的参考. 相似文献
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硅通孔(TSV)技术作为三维封装的关键技术,其可靠性问题受到广泛的关注。基于ANSYS平台,通过有限元方法,对3D堆叠封装的TSV模型进行了电-热-结构耦合分析,并进一步研究了不同的通孔直径、通孔高度以及介质隔离层SiO_2厚度对TSV通孔的电流密度、温度场及热应力分布的影响。结果表明:在TSV/微凸点界面的拐角处存在较大的电流密度和等效应力,容易引起TSV结构的失效;增大通孔直径、减小通孔长度可以提高TSV结构的电-热-机械可靠性;随着SiO_2层厚度的增加,通孔的最大电流密度增大而最大等效应力减小,需要综合考虑合理选择SiO_2层厚度。 相似文献
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使用ANSYS有限元软件建立简化的基于硅通孔技术互连的二维结构模型,用粘塑性本构Anand方程来描述SnPb钎料焊点的力学行为,针对模型中的焊球进行热力耦合计算,研究热循环过程中的热失效问题.根据模拟的温度场、应力应变场找到危险焊点位置,利用修正Coffin-Manson经验方程估算危险焊点的热疲劳寿命,并且讨论了模型中通孔直径、深度和间距等参数对焊点热疲劳寿命的影响.结果表明,在只改变单一参数的情况下,焊点疲劳失效周期通孔各参量值的增加均呈现出下降的趋势,其中通孔直径和通孔间距的大小对焊点的使用寿命影响较大. 相似文献
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由于需要外部电源的接入,传统芯片上的环形结构的物质波波导无法形成完全封闭的环形结构,其产生的环形磁阱存在天然缺陷,阻碍了对冷原子的有效操控。利用硅通孔(TSV)技术能够在垂直于原子芯片表面方向接入导线,有望降低接入导线对环形磁阱的影响。本文通过有限元方法对基于TSV技术的环形原子物质波波导进行仿真研究,对导线加载电流时的磁场进行仿真分析,并系统研究了TSV横截面形状、通孔深度、通孔间隙等因素对环形导线所产生磁阱的影响。最终结合仿真结果,设计一种在加工工艺上切实可行的基于TSV结构的环形波导原子芯片。 相似文献
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Through Silicon Via (TSV) technology is a promising and preferred way to realize the reliable interconnection for 3D IC integration. The temperature changed in the processes of TSV manufacturing and chip using, due to the mismatch in the Coefficient of Thermal Expansion (CTE) of the materials used in TSV structure, significant thermal stress will be induced under the thermal load. These stresses may lead to various reliability issues. Dimension parameters and defects are the two factors affecting the thermal behavior of TSV. In order to optimize TSV design and the quality of via filling, a numerical model of Cu-filled TSV was established to simulate and analyze the effect of diameter, aspect ratio (AR) and defects on TSV thermal stress and deformation in this paper. Simulation results show that the equivalent stress and total deformation of TSV increases as the increase of the diameter of TSV. The effect of aspect ratio on equivalent stress is very little; however, it has a great impact on total deformation, especially for the large diameter of the TSV. Additionally, the effects of shape, size and location of defect on thermal stress were also investigated. 相似文献
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《Microelectronics Reliability》2014,54(9-10):1921-1926
This research aims to enhance the understanding on position and size effects on the electro thermal behaviour of low voltage power MOSFET transistors in forward bias condition. The numerical simulations are based on a fractional design of experiments (DoE). The performance of a finite elements model is discussed by comparing thermal and electrical measurements to results of finite elements simulation on a module of free void and voided solder. The void in the model is afterwards parameterized on position and size, according to the fractional DoE of the study. The combined functions issued from the parametric simulations and the DoE show the main impact of void size on temperature of the device and on the surface temperature of the bonding wires. From the numerical viewpoint, the most impacting position of void depends highly on the void size. The redistribution of current density and temperature on MOSFET chip and bonding wires due to solder void is also observed. A future experimental study in respect to the same DoE is expected in prospect, in order to fulfil the complementarity for this approach. 相似文献
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大功率白光LED的结温测量 总被引:1,自引:1,他引:0
大功率LED器件的结温是其热性能的重要指标之一,温度对LED的可靠性产生重要的影响。采用板上封装的方法,利用大功率芯片结合金属基板封装出了大功率白光LED样品,利用LED光强分布测试仪测试了器件的I—V曲线,用正向电压法测量了器件的温度敏感系数,进而通过测量与计算得到器件的结温和热阻。最后利用有限元对器件进行实体建模,获得了器件的温度场分布。测量结果表明:正向电压与结温有很好的线性关系,温度敏感系数为2mV·℃^-1,LED的结温为80℃,热阻为13℃·W^-1。有限元模拟的结果与实测值具有良好的一致性。 相似文献
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High levels of interconnection line stress are a serious reliability problem for the integrated circuit industry. These stresses, which are due to the thermal expansion coefficient difference between the line and its surroundings, as well as to nonequilibrium film growth, can lead to failure mechanisms such as voiding and cracking. Historically, stresses in these lines have typically been modeled using a fixed configuration at the final process step. The stresses are calculated as the model Is cooled to room temperature. We have developed models to calculate stresses in interconnection structures as a function of process step, such as film deposition, etching, and thermal cycles. During processing both thermal and intrinsic stresses are induced, and continuously changed by subsequent process steps. This paper presents such an analysis of simple interconnection structures which contain two-level aluminum (Al) metal layers and a tungsten (W) via connection. Stress histories of the metal and via layers are obtained and discussed. This paper also discusses the effects on interconnection stress when intrinsic stresses in various layers are taken into account 相似文献
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Sarangapani Murali Narasimalu Srikanth Charles J. Vath III 《Microelectronics Reliability》2006,46(2-4):467-475
Thermosonic bonding process is a viable method to make reliable interconnections between die bond pads and leads using thin gold and copper wires. This paper investigates interface morphology and metallurgical behavior of the bond formed between wire and bond pad metallization for different design and process conditions such as varying wire size and thermal aging periods. Under thermal aging, the fine pitch gold wire ball bonds (0.6 mil and 0.8 mil diameter wires) shows formation of voids apart from intermetallic compound growth. While, with 1-mil and 2-mil diameter gold wire bonds the void growth is less significant and reveal fine voids. Studies also showed void formation is absent in the case of thicker 3 mil wire bonds. Similar tests on copper ball bonds shows good diffusional bonding without any intermetallic phase formation (or with considerable slow growth) as well as any voids on the microscopic scale and thus exhibits to be a better design alternative for elevated temperature conditions. 相似文献
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《Microwave Theory and Techniques》1958,6(2):173-177
This paper presents a theoretical calculation of the eddy current losses of circular electric waves in a closely-wound helix waveguide. The wire diameter is assumed large compared to the skin depth, but small compared to the guide diameter and the operating wavelength, so that the fields near the wire are quasistatic and may be determined by conformal mapping. When the wires are in contact, the waveguide wall is effectively a metal surface with grooves of semicircular cross section, the current flow being parallel to the direction of the grooves. The power loss for this case is computed to be about 8.5 per cent higher than in a waveguide with smooth metal walls. When the wires are not in contact, the wall is treated as a grating of parallel, round wires. The increase in power loss over a smooth surface is approximately 22.5 per cent when the wires are separated by a distance equal to their diameter. 相似文献