FPGA IP核数字水印保护与检测技术

数字水印技术是一种重要的知识产权核(IP)保护技术,也是应用最广泛的IP核保护技术。介绍了常用的数字水印生成方法,分析了在FPGA设计的各个层面(软核、固核、硬核)的IP核数字水印技术。IP核保护数字水印技术可以分为附加保护技术、约束保护技术和检测技术,从附加和约束两个方面分析了水印嵌入技术,介绍了水印检测技术,分析了各种方法的原理和优缺点。从性能影响、资源开销、透明性、安全性、可信度等5个方面,对几种典型的水印技术进行评估比较,最后指出数字水印技术需要解决的问题和发展趋势。     

IP承载网技术新动态

介绍了IP承载网技术的概念，分析了IP承载网技术的热点技术——位置标识和身份标志分离技术、电信级以太网技术以及深度包检测（DPI）技术，以及在IP层之上、应用层之下构建的新的、独立于特定应用的（弹性）重叠网的研究进展。     

弹性分组环技术分析

弹性分组环（RPR）技术是一种新兴的城域网技术,在此主要讨论了弹性分组环的网络体系结构和它的技术特点。从它的技术特点入手,分析研究RPR环形结构中自动拓扑识别、空间复用技术及QOS服务功能等。RPR技术使得运营商在城域网内以低成本提供电信级服务,在提供SDH级网络生存性的同时,降低了传送费用。弹性分组环技术集以太网的经济性、IP的智能化、光纤环网的丰富带宽和可靠性于一体,在功能上具有SDH时分复用、IP路由交换等功能,是目前宽带IP城域网运营商的最佳组网方案。     

基于MPLS技术的波长交换包网络设计

本文在分析了三种优选的未来IP网络解决方案的基础上,提出了一种全新的高速宽带IP网络技术方案－基于光MPLS技术的波长交换分组（包）网络,并对其进行了较深入的研究。     

一种FPGA的高速IP验证方法研究与实现

当前高速串行通信技术已被广泛地应用于电子、计算机等各个领域，高速信号质量的好坏决定了整个系统的好坏，因此对高速信号的验证变得极其重要。现场可编程门阵列（FPGA）作为高速串行通信中不可取代的高性能新品，对电子信息系统的先进性、安全性和可靠性起到决定性作用。FPGA内部集成多个高速知识产权（IP），因此对FPGA的高速IP进行验证测试变得尤为重要。通过误码率测试仪（IBERT）核来监控和评估高速IP，介绍了IBERT的基本功能、实现方法，以及高速串行收发器（GTX）的工作原理和验证方法。同时基于KC705平台搭建验证环境，使用IBERT核调整激励参数，对FPGA的高速串行接口进行验证，并对其误码、抖动和眼图进行详细的分析。实验证明，该方法大大地提高了IP的评估质量和效率。     

移动IP与蜂窝IP技术

人们对以无线方式接入Internet的需求日益增长。首先介绍了移动IP（Mobile IP）的基本原理，并指出其在支持微移动性方面的不足。然后详细介绍和分析了蜂窝IP（Cellular IP）的概念及路由、寻呼和切换等关键技术。最后根据这两种技术的互补性，提出二者进行无缝结合的方案，并认为这种结合将成为未来移动互联技术的发展方向之一。     

SYSTEM DESIGNER：系统级实施与IP集成工具

Synplicity推出System Desjgne——一款独立于器件的知识产权（1P）配置技术与系统级汇编环境，是Synplicity的Synplify Pro与Synplify Premier FPGA设计实施工具中的新成员。System Designer的功能使用户得以使用IP-XACT形式选择、配置并集成内部及第三方IP，并且在Actel、Altera、Lattice Semiconductor和Xilinx等众多不同FPGA产品中轻松实现。这种全新的工具流程为采用IP和系统级模块的FPGA设计人员在实现复杂FPGA系统时提供了一种高效的途径。     

C-to-Silicon Compiler设计工具

Cadence C-to-Silicon Compiler是一种高阶综合产品，能够让设计师在创建和复用系统级芯片IP的过程中，提高生产力。C-to—Silicon Compiler中的创新技术成为沟通系统级模型之间的桥梁，它们通常是用C／C＋＋和SystemC写成的，而寄存器传输级（RTL）模型通常被用于检验、实现和集成SoC。     

IPv6的发展现状

网际协议（Internet Protocol，IP）是TCP／IP协议族中最为核心的协议。属于TCP／IP的网络层协议。本文介绍了一种全新的IP协议IPv6（IP Version 6），首先介绍了IPv6的概念、优势，然后分析讨论了IPv6的技术，展望IPv6的发展。     

不使用MCU对三线DCP进行控制

今天，系统级芯片（SoC）设计师在产品开发中面临的最重要的问题之一，就是如何选择一个知识产权（IP）内核。它能够影响产品的性能和质量，以及上市时间和盈利能力。然而SoC设计师在选择一个内核的时候面临着诸多挑战。他们需要仔细考虑以决定哪种内核对特定的SoC最合适。他们必须决定内核的类型（软内核或是硬内核）、可交付成果的质量、可靠性和IP提供商的承诺等等。本文将就以上每个环节进行讨论，并为如何最好地评估多个相互竞争的IP内核的特性提供一个指导。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its