利用Photoshop中高斯模糊进行篡改的取证方法北大核心

经过篡改伪造后的数字图像,几乎都需要使用模糊操作对篡改伪造边缘进行润饰处理,以实现篡改区域的不可见性,因此对模糊润饰操作的检测可以作为篡改伪造取证的重要依据之一。通过对JPEG图像中DCT系数块内相关性的分析,得到二维高斯分布描述量化DCT系数的联合概率密度分布,因此,通过提取高斯模糊篡改的图像DCT系数的联合概率密度特征与未篡改图像的DCT系数的联合概率密度进行对比检测取证。实验表明,该方法能够有效地检测经过Photoshop高斯模糊篡改的数字图像。     

数字图像模糊滤波盲取证算法

数字图像模糊滤波操作常用于美化润饰“伪造”图像.针对常用的均值滤波、空域高斯低通滤波与中值滤波,提出了一种能同时检测上述3种操作的盲取证算法.首先将高频残差作为特征提取域,然后分别基于二值局部模式LBP和自回归模型提取特征,最后使用支持向量机构造模糊滤波检测器.实验结果表明,所提算法能有效地检测模糊滤波操作,对抗JPEG压缩的鲁棒性能较好.     

基于数字图像边缘特性的形态学滤波取证技术

针对数字伪造合成图像中最常用的模糊操作,本文提出了一种基于图像形态学滤波边缘特性的盲取证算法;该方法用同态滤波和形态学滤波的方法增强了模糊操作的图像边缘,分析了离焦模糊和人工模糊边界特点,利用离焦模糊和人工模糊的边缘特性实现了针对数字图像伪造的被动盲取证;实验表明,该方法能够有效地检测伪造数字图像的模糊操作痕迹,并能对已模糊操作的图像局部进行准确定位.     

图像模糊检测方法

针对数字伪造图像中最常用的模糊操作手段之一的高斯模糊操作,文中提出了一种基于同态滤波和DCT功率谱的图像模糊检测方法.该方法分析了离焦模糊和人工模糊的边界特点,首先利用同态滤波增强人工模糊操作的边缘,并提取增强后图像的二值边缘,从而区分自然模糊和人工模糊,以减小实验中出现的误判,再利用图像的DCT功率谱的分布检测出模糊篡改的区域.该方法能够有效地检测出图像的模糊操作,并进行准确定位.     

图像伪造中模糊操作的异常色调率取证技术

数字图像取证技术是对图像的完整性和真实性进行鉴别．通过分析由成像系统形成的局部色彩相关性，利用成像系统和模糊操作在数字图像局部色彩属性的差异，定义数字图像异常色调集合和异常色调率的概念，提出了一种基于异常色调率的数字图像取证技术．实验表明，该方法能够有效地检测出对数码相机拍摄图像进行模糊操作的痕迹，并能够对经过模糊操作的图像局部进行准确判断．     

基于DCT系数双量化映射关系的图像盲取证算法

图像篡改过程会留下一些痕迹破坏自然图像的一致性,为图像的盲取证提供了线索。该文针对篡改过程中的JPEG重压缩操作,根据原始离散余弦变换(DCT)系数与重压缩后DCT系数的映射关系,提出一种新的图像重压缩概率模型来描述重压缩前后DCT系数统计特性的变化,并结合贝叶斯准则,利用后验概率表示JPEG篡改图像中存在的 DQ(Double Quantization)效应,通过后验概率密度图实现篡改区域的定位。实验表明,该方法能够快速并准确实现篡改区域的自动检测和定位,尤其是当第2次压缩因子小于第1次压缩因子时,正确率相对于传统算法有明显的提高。该方法不仅能检测Photoshop等图像编辑软件制作的手工合成篡改图像,同样也适用于图像智能编辑算法如图像修复算法和图像重排算法制作的篡改图像。     

利用颜色滤波矩阵估计原图的拼接定位盲取证方法

图像拼接是伪造数字图像最基本的操作,对其的被动盲检测和定位也是数字图像取证亟待解决的关键问题之一。该文通过对图像进行颜色滤波矩阵插值,对图像进行了原图估计,重建其像素邻域一致性。利用待取证图像的边缘点在像素邻域一致性上偏离估计的原始图像的程度,对图像的拼接进行准确定位。实验表明,该方法能够有效地检测图像拼接伪造区域的位置、大小和形状。     

基于MROGH特征描述子的图像局部拷贝-旋转-移动行为取证

各种数字图像编辑软件的普及让人们的生活更加多姿多彩,但同时也带来了更多的安全隐患——恶意的篡改者伪造图像、传播虚假内容的门槛极大地降低了.图像局部拷贝-移动(copy-move)是最为容易操作且有效的图像篡改手段之一,针对这种图像篡改手段的取证技术也在近年来受到了广泛关注.在图像的局部拷贝-移动篡改过程中,通常会包含一定程度的旋转操作,因此取证手段对于旋转的鲁棒性非常重要.本文提出了以筛选后的哈里斯角点结合MROGH(Multi-support Region Order-based Gradient Histogram)特征描述子的图像局部拷贝-旋转-移动篡改取证方法.实验证明,该方法具有良好的特征点覆盖率和旋转鲁棒性.     

基于伪造痕迹的数字图像盲检测综述

随着数字图像处理技术的发展,人们对于数字图像的编辑越来越容易,这给数字图像的安全带来较大的挑战。因此,数字图像伪造盲检测成为了图像安全领域的研究热点。文中对数字图像盲取证的研究现状进行分析;并根据伪造图像盲检测技术的特点,对常见的几类数字图像盲检测进行简单的分析;并最终探讨了未来的研究方向。     

一种基于差分DCT系数对直方图的图像取证方法

提出了一种基于差分DCT域系数对直方图的图像拼接篡改检测方法.该方法首先对图像进行DCT变换,而后分别计算DCT系数矩阵的水平、垂直、主对角线、副对角线四个方向的差分DCT系数矩阵,并对得到的差分DCT系数矩阵进行系数对直方图化,提取特征向量.最后,利用支持向量机对真实图像和篡改后的图像进行分类识别.实验结果表明,在相关的测试数据集上,和现存的一些算法相比,该方法不仅具有较低的计算复杂度,同时,其检测性能在目前所有提出的算法中达到最高,性能优良.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-