基于点积差分的弱信号捕获方法性能分析

捕获是GNSS接收机信号处理中的关键部分,在弱信号条件下,传统基于包络检波的捕获方法由于检波损耗太大已不再适用。介绍了一种新的检波方法——点积差分检波来取代传统的包络检波,为弱信号条件下GNSS接收机的捕获设计提供了理论依据。理论分析表明,点积差分检波在弱信号条件下引入的检波损耗远低于包络检波,可用于有频率辅助的GNSS接收机的弱信号捕获。最后,通过仿真实验验证了理论分析的正确性。     

基于共轭差分的弱信号捕获方法性能分析

传统基于包络检波的捕获方法由于平方损耗太大已不适用弱信号条件下的全球导航系统(GNSS)信号捕获。介绍了一种新的检波方法——共轭差分检波来取代传统的包络检波,为弱信号条件下GNSS接收机的捕获设计提供了理论依据。理论分析表明,共轭差分检波在弱信号条件下引入的检波损耗远低于包络检波,并且共轭差分检波通过改善噪声的统计特性提高了后处理增益。通过仿真实验验证了理论分析的正确性。     

低信噪比环境下短扩频码捕获性能的改善

介绍了低信噪比环境下基于FFT的扩频码捕获技术,提出了在相同累加段数情况下提高性能的方案。作为提高相干增益的两种方式,相干累加和非相干累加各有优缺点,在一定的数据长度内合理地设计累加方式对提高捕获性能大有帮助。基于两种累加方式的性能介绍了一种两路非相干积分的累加方式。对于GPS信号,在低信噪比的环境下的仿真证明,在一定长度下优化后的累加方式相比非相干累加和普通混合累加方式能够得到更好的捕获效果(更高的检测概率)。     

极弱GNSS信号高灵敏度快速捕获技术研究

由于相干积分时间较长,检测误码率大,多普勒延迟效应等影响,利用基于混沌阵子的差分相干捕获实现方法计算量大,难以进行快速捕获,本文介绍了一种极弱GNSS信号高灵敏度快速捕获技术,主要包括微弱GNSS信号检测技术、多普勒频率偏差补偿技术及相干积分与非相干累加结合方法,解决了对极弱GNSS信号高灵敏度快速捕获的问题。     

一种GNSS信号捕获中的比特压缩与重构方法

在全球导航卫星系统(GNSS)双模接收机的信号捕获过程中,采用"多段匹配滤波器(MMF)+快速傅里叶变换(FFT)"的方式实现信号的时频二维搜索,采用非相干累加算法以提高捕获灵敏度,这2种算法在硬件实现中需要占用大量的存储资源。由于现场可编程门阵列(FPGA)芯片的存储资源有限,本文提出了一种比特压缩方法,极大地降低了非相关累加后的随机存取存储器(RAM)资源,比特重构方法对压缩数据做还原处理,保证了数据的精确度。该方法只对强信号的非相干累加结果做压缩,对弱信号结果不做压缩处理。仿真结果表明,该算法在满足0.9的检测概率,0.01的虚警概率下,节省了0.64 Mbit的RAM资源。     

微弱GNSS信号捕获中的能量累加方法

文章分析了弱信号条件下全球卫星导航系统（GNSS）信号的特点,较为详细地阐述了基于相干积分与非相干积分的能量累加原理,分析了两种方法的优点和缺点,给出了弱信号捕获中常用相干与非相干相结合的方法。最后介绍了差分相干算法．它可以看作是对非相干方法的一种改进方法。     

级联FFT伪码捕获算法的研究与改进

新一代卫星导航信号体制采用的复合扩频码信号,给信号的捕获带来不利影响。本文深入研究了用于复合扩频码捕获的级联FFT伪码捕获算法,首次推导出算法的数学原理,为算法提供了理论依据。依据算法的数学原理,定量分析了载波多普勒和码多普勒对算法捕获性能的影响。载波多普勒的影响是两级多普勒补偿后的剩余多普勒共同作用的结果,码多普勒将导致算法在弱信号条件下的捕获失效。根据码多普勒的产生机理,结合算法的特点,提出分段码多普勒补偿改进算法,减小捕获性能损失,增加捕获时的能量累加时间。最后对分析结果进行仿真验证,仿真结果表明,算法的性能损失与理论分析结果相互吻合,改进算法能有效性的减小码多普勒影响,实现对微弱导航信号的捕获。      

高动态弱信号环境下基于INS的GNSS捕获方法分析

为保证 GNSS 在挑战环境下的捕获性能，分析了高动态弱信号捕获存在的问题，提出了一种新的 INS 辅助并行码相位捕获方法，在频域利用 INS 辅助信息卫星星历/历书数据估计多普勒，缩小频率搜索范围，在码域利用码相位估计及并行码相位搜索的方法，减少码相位搜索时间，最后结合差分相干累积提高捕获灵敏度，实现高动态弱信号的快速捕获。仿真结果表明， 该算法能显著提升高动态、弱信号环境下 GNSS 接收机的捕获性能。     

一种用于GPS信号快速捕获的自适应算法

采用聂孟-皮尔逊准则,以发现概率为性能指标,对基于FFT非相干累加的GPS信号捕获算法的性能进行了详细的理论推导,给出了该种方法的理论性能上界, 提出了一种用于快速捕获的高效自适应算法,并通过系统仿真对理论结果进行了验证.对实际情况中概率分布的合理近似使理论分析过程得以简化,并使判决门限可根据噪声方差及累加次数进行自适应调整的算法可以直接应用于实时GPS接收机的设计.     

机载GNSS-R海面风场信号处理技术研究

研究GNSS海面散射信号相关功率,对反演海面风速具有非常重要的作用。针对低信噪比下,传统的方法不能成功捕获卫星信号,无法得到海面散射信号相关功率的问题,提出一种延长相干积分时间来获得海面散射信号相关功率的方法,并进行了仿真。将仿真结果与传统方法的仿真结果进行对比分析,发现该方法可以捕获到卫星信号,提高了接收机的灵敏度并准确绘制了海面散射信号相关功率波形图。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm