具有长程传播和亚波长模式局域性的混合双楔形等离子体波导（英文）

提出一个混合双楔形等离子体波导,该波导由两个楔形介质波导和一个菱形金属线组成.电介质楔形波导模式和长程表面等离子体模式的耦合使得该波导可以获得低损耗的传播和超深的亚波长的模式局域性.混合双楔形等离子体波导在得到一个532μm的传播长度的同时可以得到一个2. 9×10~(-3)的超小的归一化模式面积或者在得到一个6. 2×10~(-3)的归一化模式面积的同时可以得到一个3 028μm的超长的传播距离.此外,还研究了制作过程中可能存在的误差对该波导模式性质的影响.计算结果表明,该混合双楔形等离子体波导具有一定的制作容差性.     

具有亚波长模式局域性的全介质反槽波导及其与输入/输出光纤的高效耦合

由于金属固有的欧姆损耗,表面等离子体波导通常具有较大的传输损耗。基于此,提出了一种全介质反槽波导结构,该波导可以同时实现亚波长模式局域性和理论上无损耗的传输,归一化模式面积可以达到3.4×10^-2。另外,为了实现该小尺寸反槽波导与输入/输出光纤的高效耦合,提出了一种高效的耦合方案,耦合效率可以达到92.7%,在y和z方向上1 dB损耗的耦合偏差均约为2 μm。     

基于SOI材料的刻蚀光栅分波器的制作工艺

研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺．利用电感耦合等离子体刻蚀（ICP）技术，在SOI材料上制作了垂直度大于89°的光滑的光栅槽面．氧化抛光后刻蚀侧壁的表面均方根粗糙度（RMS）有3nm的改善，达到7.27nm（采样面积6.2μm×26μm）．通过采用集成波导拐弯微镜代替弯曲波导使1×4分波器的器件尺寸仅为20mm×2.5mm．测试结果表明器件实现了分波功能．     

金属脊-三角形半导体型混合表面等离子体波导

提出了一种新颖的基于金属脊-三角形半导体的混合表面等离子体波导结构,基于有限元法对该波导结构进行了数值仿真和分析.主要研究了该结构的电场分布、传输长度、归一化模场面积和质量因数.结果表明:在工作波长为1 550 nm时,通过优化参数,其有效模场面积达到0.00193 λ~2,传输长度为37.7μm,质量因数为4853,该结构具有较低的损耗.与金属平板混合波导结构相比,具有更大的质量因数,更强的光场限制能力,波导的综合性能更好.这种波导结构在微纳米光子学、光电子通讯和光信息存储等领域具有广阔应用前景.     

混合双肋型表面等离子体波导的传输特性

设计了一种新颖的混合双肋型表面等离子体波导结构,基于有限元法对该波导在工作波长为1550nm下的传输特性进行了数值仿真和优化分析。研究了该结构的电场分布、传输损耗、归一化模场面积、品质因子和增益系数。结果表明,通过最优参数设计,有效模场面积可达1.5×10~(-4)λ~2,品质因子为135,增益系数为1286cm~(-1),且此时具有较小的损耗。与矩形金属脊混合波导结构相比,所设计的结构具有更强的光场限制能力,可以获得更好的波导传输效果。所设计的波导结构是未来解决光电技术高速化、小型化、集成化的一个重要途径。     

在InGaAsP/InP双异质结构中的光弹效应及其对侧向光的限制作用

从理论上计算了厚度为 110 nm的 W0 .95 Ni0 .0 5 金属薄膜应变条在 In Ga As P/ In P双异质结构中形成的应力场分布 ,及由应力场分布引起的折射率变化 .在 W0 .95 Ni0 .0 5 金属薄膜应变条下半导体中 0 .2— 2μm深度范围内 ,由应变引起条形波导轴中央的介电常数 ε相应增加 2 .3× 10 - 1— 2 .2× 10 - 2 (2 μm应变条宽 )和 1.2× 10 - 1— 4.1× 10 - 2(4μm应变条宽 ) .同时 ,测量了由 W0 .95 Ni0 .0 5 金属薄膜应变条所形成的 In Ga As P/ In P双异质结光弹效应波导结构导波的近场光模分布 .从理论计算和实验结果两方面证实了 In Ga As P/ In P     

三维光场限制的混合表面等离子体纳米激光器

设计了一种带圆角的金属脊和低折射率空气间隙的新型混合表面等离子体波导结构。基于有限元法建立数学模型,在工作波长为489nm的可见光波段研究了该波导的电场分布、归一化模式面积、传输距离、品质因子和珀塞尔因子随金属脊曲率半径的变化情况。结果表明,调整结构参数可使波导实现超深亚波长的光场限制,同时获得较大的SPPs辐射增强倍数。在最优几何参数(纳米线半径为95nm,金属脊曲率半径为20nm)下,波导有效模式面积为0.0037λ2,品质因子为268,珀塞尔因子为65,增益阈值为0.2768μm-1,其表征激光增强值为69800。该激光器谐振腔具有超强的局域能力和激光增强能力,可以实现超深亚波长的低阈值激射。     

光弹效应在光电子器件中的应用

在直流负偏压120V作用下利用射频溅射和光刻剥离技术在InGaAsP/InP双异质结结构外延片表面淀积110nm厚、宽为2μm的W0.95Ni0.05金属薄膜应变条. 实验测得W0.95Ni0.05金属薄膜应变条边缘单位长度产生9.7×105dyn/cm压应变力.在这样压应变力作用下,W0.95Ni0.05金属薄膜应变条下InGaAsP/InP 双异质结结构内0.2～2μm深度范围内形成的条形波导的导波强度为1.5×10-3至1.7 ×10-1.与由W和SiO2应变薄膜所形成的光弹波导及其光弹光电子器件相比较,由W 0.95Ni0.05金属薄膜应变条形成的光弹效应波导结构在平面型光电子器件中有着更重要的实际应用.     

GaAs非对称波导形耦合器研究

在(100)GaAs同质结外延衬底上(波导层厚3μm,杂质浓度n~-≈10~(15)/cm~3)研制了非对称波导X交叉型3dB耦合器,对称波导条宽6μm,分叉角0.8°;非对称波导宽臂条宽6.5μm,窄臂条宽5.5μm。分叉角0.4°,波导脊高1μm。实验结果证明,该器件具有良好的3dB耦合特性,并获得15dB的消光比,可以成为集成光学的基础元件之一,在研制2×2集成光学器件方面有广泛地应用前景。     

用于波导放大器的Er3+/Yb3+共掺磷酸盐玻璃的性能研究

通过优化熔融条件和玻璃组份,成功开发出一种新的Er3+/Yb3+ 共掺磷酸盐玻璃,其在沸水和熔盐中均表现出很好的化学稳定性.通过分析室温下Er3+/Yb3+ 共掺磷酸盐玻璃的吸收光谱,计算得到了Er3+ 离子在波长1533 nm处的峰值发射截面和杜得奥菲而特强度参数;其中Er3+ 离子在波长1533 nm 处的峰值发射截面为0 72×10-20 cm2,大于Schott的IOG1玻璃中Er3+离子的峰值发射截面0 67×10-20 cm2.通过改变离子交换的条件,获得了1 55μm单模光波导的制作条件;制作的波导传输损耗均小于1 dB/cm.初步的离子交换实验表明,Er3+/Yb3+共掺磷酸盐玻璃WM4完全适合波导放大器的制作.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.