基于SOI的双极场效应晶体管

在分析了双极型晶体管和场效应晶体管各自的特点和不足后，介绍了一种既具有双极型晶体管较大电流容量和功率输出，又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET)，同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流，可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET，分析了其工作原理j与体硅BJMOSFET比较，由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应，使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。     

非线性双极晶体管模型的研究

本文对非线性双极晶体管的模型进行了研究,非线性晶体管模型对微波CAD和无线电系统仿真都是非常关键的。本文采用等效电路模拟非线性双极晶体管,给出了等效电路模型及模型参数,并用这些参数描述了非线性双极晶体管工作过程中的直流特性和各种效应:基区宽度调制效应、电荷储存效应;正向电流增益(BF)随电流的变化以及温度的影响等。为准确地建立不同用途双极晶体管的模型提供了依据。     

BJFET直流特性的PSpice模拟分析

新型双极结型场效应晶体管 (BJFET)兼有双极型和单极场效应两种器件的功能特点。文中分析推导出该新型器件的直流特性 ,然后使用 PSpice软件进行直流特性及其参数扫描模拟分析 ,并验证了理论计算结果的正确性     

沟道基区晶体管

本文报导了一类新的晶体管-沟道基区晶体管(CBT)的实验研究和初步理论分析结果。这种晶体管在原理上同时含有双极晶体管和常闭型结型场效应晶体管的成份,其突出优点是电流增益随温度的变化和小电流区电流增益随电流的变化都远比双极晶体管小。     

双极双栅MOS晶体管静态特性解析模型的模拟与分析

提出了一种应用于VHF和UHF的新型功率电子器件－双极双栅MOS晶体管（BDGMOSFET）,该结构是在单栅MOSFET一侧引入双极型压控晶体管（BJMOSFET）,使之在正向工作时具有MOSFET和BJT的工作特性,通态电较小,同时,减少了寄生双极晶体管效应,改善了频率特性。文章对其静态特性的解析模型进行了详细研究,在该模型基础上运用通用电路模拟软件PSPICE的多瞬态分析法模拟了BDEMOSFET的直流特性,结果表明,在同等条件下,BDGMOSFET的电流密度比双栅MOSFET提高大约30％。     

新型高频硅光电负阻器件的特性模拟及测试分析

给出了达林顿 λ型光电双极晶体管 (DPL BT)的结构及其等效电路 ,并以此等效电路为基础 ,用 PSPICE电路模拟程序对 DPL BT的电学特性 (IC- VCE)进行了模拟 ,对所研制的 DPL BT器件进行了测试 ,并对模拟和实验结果作了深入分析 ,其 IC- VCE特性与模拟结果符合得较好 .研究发现 DPL BT具有良好的特性和多种光电功能 ,在光逻辑、光计算、光通信等领域中具有较好的应用前景     

高温超导场效应晶体管的动态导纳模拟

本文基于我们建立的超声场效应器件的统一信号理论,引进了动态导纳参数。对高温超导场效应晶体管的低频电流－电压特性进行了数值模拟。分别对推广的二流体模拟中正常电流和超导电流在一定的条件下随栅电压、漏电压、温度和频率的变化进行了分析。给出了一种高温超导场效应器件低频特性新的研究方法。     

新型高频硅光电负阻器件的特性模拟及测试分析

给出了达林顿λ型光电双极晶体管(DPLBT)的结构及其等效电路,并以此等效电路为基础,用PSPICE电路模拟程序对DPLBT的电学特性(IC-VCE)进行了模拟,对所研制的DPLBT器件进行了测试,并对模拟和实验结果作了深入分析,其IC-VCE特性与模拟结果符合得较好.研究发现DPLBT具有良好的特性和多种光电功能,在光逻辑、光计算、光通信等领域中具有较好的应用前景.     

场效应器件

除双极晶体管外,场效应晶体管是集成电路中已经采用的重要有源器件。本章将讨论结型和金属—绝缘体—半导体(MIS)场效应晶体管的物理理论、电特性、等效电路、线性和开关电路应用以及大规模集成等。引言 1.电压控制的电阻信号放大的概念与电阻的调制有关。场效应原理可简单地解释为电压控制的电阻,意思是电阻的某些特性是与电压有关。一固体的电导G取决于电导率σ和结构的物理尺寸     

双极型晶体管EM_3模型中欧莱电压的测量

EM 模型是由 Ebers 和 Moll 两人于1954年根据器件物理特性所建立的双极型晶体管非线性模型,以后经过许多人的不断改进,已成为目前最常用的晶体管模型。EM_(?)模型是模拟双极型晶体管的第三级复杂程度的非线性模型。它是在 EM_2模型的基础上对直流特性、电荷储存效应以及温度特性等方面进行了二级修正后改进的模型。它包括了诸如基区宽度调制效应、共发射极电流增益β和正向传输时间τ_F 随电流的变化,更符合实际地表示了分布性的集电结电容,以及器件参数随温度的变化等各种二阶效应。本文主要介绍 EM_3模型中表示基区宽度调制效应的参数欧莱(Early)电压 V_A 的定义和测量原理,     

Temperature Characteristics of BJMOSFET

The resolution expression for the temperature dependence of the current and threshold voltage is deduced as well as the analysis of temperature characteristics of BJMOSFET. Equivalent circuit of analysis and simulation has been established for the BJMOSFET temperature characteristics. By using the general circuit simulation software of PSpice9 and computer simulation, characteristic graphs of the BJMOSFET output characteristic, transient characteristic and amplitude-frequency characteristic with temperature variation are obtained. The results accorded very good with theoretical analysis and proved that BJMOSFET has better temperature characteristics than traditional MOSFET.     

Temperature dependent threshold behavior of depletion mode MOSFETs: Characterization and simulation

During the study of depletion mode MOSFET behavior at low temperatures, unusual changes in the threshold characteristics of the devices were observed. First, the effectiveness of the donor implantation in producing a negative threshold voltage shift was significantly reduced. At the same time the substrate sensitivity was found to be substantially reduced. A third observation was the existence of an unusual structure in the subthreshold region of the device at low temperatures. Computer simulation is used to explore these observations and to demonstrate that they are caused by impurity freezeout as temperature is reduced. The computer simulation program, usable over the temperature range 50–350 K, is discussed, and a threshold definition suitable for numerical analysis of devices with arbitrary channel structures is developed.     

Numerical Simulation of BJMOSFET on Current-Voltage Characteristics

A new power MOSFET Structure with a pn junction--Bipolar Junction MOSFET (BJMOSFET) has been proposed. The device has the advantages of both BJT and FET. The numerical model of the I-V characteristics of BJMOSFET has been obtained on the basis of both numerical and analytical methods. With the software package of Mathematic, we firstly calculate the gain factor, and then simulate the voltage tranmission, voltage output and voltage transfer's characteristic graphs of the BJMOSFET. The simulation result indicates that BJMOSFET has the current density, which is about 25% larger than the power MOSFET, under the same operating conditions and with the same structure parameters, except that the threshold voltage increase a little.     

pH-ISFET器件及其电路的SPICE模拟方法

本文提出用SPICE软件模拟pH-ISFET器件及其电路的方法。通过SPICE内部的MOSFET参数和引入一些信号源来实现对pH-ISFET传感器及其电路的pH灵敏度关系、瞬态响应以及温度特性的模拟,所得结果与实验观测结果基本相符。     

基于Matlab/Simulink的SiC MOSFET建模与分析

针对现阶段SiC MOSFET建模研究无法应用在电机控制系统领域的现状,提出了一种基于Matlab/Simulink的SiC MOSFET仿真电路模型。对功率器件的动态特性和静态特性进行综合分析,采用非分段受控电流源模型模拟功率器件静态特性,具体分析SiC MOSFET的开关过程,同时采用曲线拟合的方法对影响器件开关过程的非线性电容进行表征,在Matlab/Simulink中建立SiC MOSFET等效电路模型。为了验证模型准确性,将仿真结果与数据手册中的数据进行比较分析,仿真结果表明所建模型可以较为准确地描述SiC MOSFET动、静态特性,开通时间和关断时间误差均小于7%,对比结果验证了模型的准确性和有效性。建立的模型为SiC MOSFET在电机控制策略仿真及应用领域提供了参考依据。     

A new equivalent MOSFET representation of a HEMT to analyticallymodel nonlinear charge control for simulation of HEMT devices andcircuits

It is shown that, from the point of view of the behavior of the charge and position of the Two-Dimensional Electron Gas (2-DEG) as a function of gate-source and drain-source voltages, the complex High Electron Mobility Transistor (HEMT) can be regarded as a simple Buried-Channel (BC) MOSFET. Thus, the characteristics of a HEMT, namely channel charge and capacitance/transconductance as a function of gate voltage below and above threshold are akin those of a BC MOSFET. Hence, there are discrepancies in the conventional Surface Channel MOSFET-like approach to HEMT modeling. Existing simple BC MOSFET dc and ac models can be used for on-paper analysis and computer aided simulation of HEMT devices and circuits, if the HEMT is represented by an equivalent BC MOSFET as derived in this paper. The new representation can be useful for modeling of short-channel HEMT phenomena     

The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis

In the recent years, localization of subtle defects has required device electrical data. Nanoprobing systems based on scanning electron microscopy (SEM) or atomic force microscopy (AFM) have become a significant tool for device measurement in failure analysis (FA) Labs. Failure Analysts can use electrical characteristics to isolate failure location in the metal–oxide–semiconductor field-effect-transistor (MOSFET). The missing lightly doped drain (LDD) implant is an example of a critical failure mechanism for the MOSFET and cell in the SRAM which is localized using nanoprobing. In this article, device data analysis and theoretical deductions are discussed related to missing LDD doping. Device data is used to propose a full set of characteristic for missing LDD. The simulation from a mature tool is able to support the electrical characteristics. The capability and challenge of the following physical FA to reveal the defect are also discussed.     

Comparative study of leakage power in CNTFET over MOSFET device

A comparison of the CNTFET device with the MOSFET device in the nanometer regime is reported.The characteristics of both devices are observed as varying the oxide thickness.Thereafter,we have analyzed the effect of the chiral vector and the temperature on the threshold voltage of the CNTFET device.After simulation on the HSPICE tool,we observed that the high threshold voltage can be achieved at a low chiral vector pair.It is also observed that the effect of temperature on the threshold voltage of the CNTFET is negligibly small.After that,we have analyzed the channel length variation and their impact on the threshold voltage of the CNTFET as well as MOSFET devices.We found an anomalous effect from our simulation result that the threshold voltage increases with decreasing the channel length in CNTFET devices; this is contrary to the well known short channel effect.It is observed that at below the 10 nm channel length,the threshold voltage is increased rapidly in the case of the CNTFET device,whereas in the case of the MOSFET device,the threshold voltage decreases drastically.     

深亚微米薄膜SOI MOSFET的二维数值模拟

本文介绍了适合于薄膜亚微米、深亚微米ＳＯＩＭＯＳＦＥＴ的二维数值模拟软件。该模拟软件同时考虑了两种载流子的产生－复合作用，采用了独特的动态二步法求解泊松方程和电子、空穴的电流连续性方程，提高了计算效率和收敛性。利用此模拟软件较为详细地分析了薄膜ＳＯＩＭＯＳＦＥＴ不同于厚膜ＳＯＩＭＯＳＦＥＴ的工作机理及特性，发现薄膜ＳＯＩＭＯＳＦＥＴ的所有特性几乎都得到了改善。将模拟结果与实验结果进行了对比，两者吻合得较好。     

高k栅介质MOSFET电特性的模拟分析

对高k栅介质MOSFET栅极漏电进行研究 ,确定栅介质的厚度 ,然后使用PISCES Ⅱ模拟器对高k栅介质MOSFET的阈值电压、亚阈斜率和Idsat/Ioff进行了详细的分析研究。通过对不同k值的MOSFET栅极漏电、阈值电压、亚阈斜率和Idsat/Ioff的综合考虑 ,得出选用k <5 0且Tk/L≤ 0 .2的栅介质能获得优良的小尺寸MOSFET电性能。