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基于Matlab/Simulink的SiC MOSFET建模与分析
引用本文:郭毅锋,王旭,李霞,李昊龙,李凯莹.基于Matlab/Simulink的SiC MOSFET建模与分析[J].半导体技术,2021,46(3):216-222.
作者姓名:郭毅锋  王旭  李霞  李昊龙  李凯莹
作者单位:广西科技大学电气与信息工程学院,广西柳州 545616;中车唐山机车车辆有限公司,河北唐山 063000
基金项目:国家重点研发计划资助项目(2018YFB1201604-02)。
摘    要:针对现阶段SiC MOSFET建模研究无法应用在电机控制系统领域的现状,提出了一种基于Matlab/Simulink的SiC MOSFET仿真电路模型。对功率器件的动态特性和静态特性进行综合分析,采用非分段受控电流源模型模拟功率器件静态特性,具体分析SiC MOSFET的开关过程,同时采用曲线拟合的方法对影响器件开关过程的非线性电容进行表征,在Matlab/Simulink中建立SiC MOSFET等效电路模型。为了验证模型准确性,将仿真结果与数据手册中的数据进行比较分析,仿真结果表明所建模型可以较为准确地描述SiC MOSFET动、静态特性,开通时间和关断时间误差均小于7%,对比结果验证了模型的准确性和有效性。建立的模型为SiC MOSFET在电机控制策略仿真及应用领域提供了参考依据。

关 键 词:SiC  MOSFET  等效电路  MATLAB/SIMULINK仿真  曲线拟合  动态特征  静态特性

Matlab/Simulink-Based Modeling and Analysis of SiC MOSFETs
Guo Yifeng,Wang Xu,Li Xia,Li Haolong,Li Kaiying.Matlab/Simulink-Based Modeling and Analysis of SiC MOSFETs[J].Semiconductor Technology,2021,46(3):216-222.
Authors:Guo Yifeng  Wang Xu  Li Xia  Li Haolong  Li Kaiying
Affiliation:(School of Electrical and Information Engineering,Guangxi University of Science and Technology,Liuzhou 545616,China;CRRC Tangshan Co.,Ltd.,Tangshan 063000,China)
Abstract:For the current situation that SiC MOSFET modeling research cannot be applied in the field of motor control system,a simulation circuit model of SiC MOSFET based on Matlab/Simulink was proposed.The dynamic and static characteristics of the power device were comprehensively analyzed.The non-segmented controlled current source model was used to simulate the static characteristic of the power device,the switching process of the SiC MOSFET was specifically analyzed,the nonlinear capacitance affecting the switching process of the device was characterized by using curve fitting method,and the SiC MOSFET equivalent circuit model was established in Matlab/Simulink.In order to verify the accuracy of the model,the simulation results were compared with the data in datasheet.The simulation results show that the proposed model can describe the dynamic and static characteristics of the SiC MOSFET accurately,while the turn-on time and turn-off time errors are within 7%,and the comparison results verify the accuracy and validity of the model.The established model provides a reference for the simulation and application of SiC MOSFETs in motor control strategies.
Keywords:SiC MOSFET  equivalent circuit  Matlab/Simulink simulation  curve fitting  dynamic characteristic  static characteristic
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