共查询到17条相似文献,搜索用时 109 毫秒
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研究了AZO(ZnO∶Al)替代ITO透明导电膜在GaN基LED中的应用,通过脉冲激光沉积和磁控溅射法制作了AZO薄膜,分析了AZO与p型GaN不良的欧姆接触的物理机理,并利用插入ITO薄层来改善接触电阻,实验用ITO 20nm/AZO 500nm的复合导电薄膜做透明导电薄膜,成功得到了波长为525.74nm、亮度为380.88mcd、电压为3.35V的GaN基绿光LED芯片,相当于单一ITO透明导电膜的性能,整个试验工艺中减少了ITO的使用量,降低了LED芯片的制造成本。 相似文献
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给出了在氧气气氛中利用单束脉冲激光交替作用锌靶和铝靶进行掺铝氧化锌(AZO)透明导电薄膜的脉冲激光沉积(PLD)新方法,分析了该方法的特点与优点,并与利用ZnO陶瓷掺杂靶制备AZO薄膜的方法进行了对比。利用该方法分别在玻璃片和硅片上制备了AZO薄膜,用SEM观察了薄膜的表面型貌,用X射线衍射谱(XRD)研究厂薄膜的结构,最后通过透射光谱分析了制备的透明导电膜在可见光区的透射性能。实验结果表明:利用该方法能够制备出性能优越的AZO功能薄膜。 相似文献
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掺铝氧化锌(AZO)导电薄膜的研究进展 总被引:1,自引:0,他引:1
综述透明导电薄膜的性能、种类、制备工艺、研究及应用状况,重点讨论掺铝氧化锌(AZO)薄膜的结构、导电机理、光电性能和当前的研究焦点。并指出,为了进一步提高透明导电薄膜的性能,应从以材料选择、制备工艺、多层膜光学设计等方面深入研发,以满足尖端技术的需要。 相似文献
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采用磁控溅射法及线棒刮涂法在玻璃衬底上室温生长微纳结构铝掺杂氧化锌(AZO)薄膜,使底层AZO薄膜工作压强从1.5 Pa调整到0.1 Pa。通过扫描电子显微镜(SEM)、X线衍射(XRD)仪、霍尔效应测试系统、分光光度计及光电雾度仪研究了AZO薄膜的表面形貌、晶体结构、电学性能和光学性能。研究结果表明,降低底层AZO薄膜工作压强对微纳结构AZO薄膜光电性能有显著的影响。底层AZO薄膜工作压强0.2 Pa时,薄膜表现最低电阻率为6.17×10-4 Ω·cm,可见光波段平均光学透光率为82.3%。随着底层AZO薄膜工作压强的降低,薄膜表面形貌、生长形态和晶粒大小发生较大变化,并得到具有陷光作用、优良光电性能的微纳结构AZO薄膜。 相似文献
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室温下采用RF磁控溅射技术在石英衬底E制备了多晶ZnO:Al(AZO)透明导电薄膜,通过XRD,AFM,AES,Hall效应及透射光谱等测试研究了RF溅射功率、氩气压强对薄膜的结构、电学和光学性能的影响.分析表明:在最优条件下(溅射功率为250W,氩气压强为1.2Pa时),180nm AZO薄膜的电阻率为2.68×10-3 Ω·cm,可见光区平均透射率为90%,适合作为发光二极管和太阳能电池的透明电极.所制备的AZO薄膜具有c轴择优取向,晶粒问界中的O原子吸附是限制薄膜电学性能的主要因素. 相似文献
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Matj Hla Shohei Fujii Alex Redinger Yukari Inoue Germain Rey Maxime Thevenin Valrie Deprdurand Thomas Paul Weiss Tobias Bertram Susanne Siebentritt 《Progress in Photovoltaics: Research and Applications》2015,23(11):1630-1641
We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n‐type window of low band gap solar cells. We demonstrate that low‐voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non‐reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10−3Ω cm). The films prepared with additional RF biasing possess lower free‐carrier concentration and higher free‐carrier mobility than Al‐doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high‐temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se2, CuInSe2 and Cu2ZnSnSe4‐based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density JSC. This aspect is specifically beneficial in preparation of the Cu2ZnSnSe4 solar cells with band gap down to 0.85 eV; our champion device reached a JSC of nearly 39 mAcm−2, an open circuit voltage of 378mV, and a power conversion efficiency of 8.4 %. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
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Ligand‐Free Synthesis of Aluminum‐Doped Zinc Oxide Nanocrystals and their Use as Optical Spacers in Color‐Tuned Highly Efficient Organic Solar Cells 下载免费PDF全文
Meriem Gaceur Sadok Ben Dkhil David Duché Fatima Bencheikh Jean‐Jacques Simon Ludovic Escoubas Mahdi Mansour Antonio Guerrero Germà Garcia‐Belmonte Xianjie Liu Mats Fahlman Walid Dachraoui Abdou Karim Diallo Christine Videlot‐Ackermann Olivier Margeat Jörg Ackermann 《Advanced functional materials》2016,26(2):243-253
The color of polymer solar cells using an opaque electrode is given by the reflected light, which depends on the composition and thickness of each layer of the device. Metal‐oxide‐based optical spacers are intensively studied in polymer solar cells aiming to optimize the light absorption. However, the low conductivity of materials such as ZnO and TiO2 limits the thickness of such optical spacers to tenths of nanometers. A novel synthesis route of cluster‐free Al‐doped ZnO (AZO) nanocrystals (NCs) is presented for solution processing of highly conductive layers without the need of temperature annealing, including thick optical spacers on top of polymer blends. The processing of 80 nm thick optical spacers based on AZO nanocrystal solutions on top of 200 nm thick polymer blend layer is demonstrated leading to improved photocurrent density of 17% compared to solar cells using standard active layers of 90 nm in combination with thin ZnO‐based optical spacers. These AZO NCs also open new opportunities for the processing of high‐efficiency color tuned solar cells. For the first time, it is shown that applying solution‐processed thick optical spacer with polymer blends of different thicknesses can process solar cells of similar efficiency over 7% but of different colors. 相似文献
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Boateng Onwona‐Agyeman Motoi Nakao Gamaralalege Rajanya Asoka Kumara Sedari Mudiyanselage Migara Lakshitha Karunarathne Sepalage Gaveshana Anuradha Nilupulee Dematage 《Progress in Photovoltaics: Research and Applications》2014,22(6):661-665
A dye‐sensitized solar cell (DSC) made of nanoporous ZnO film on aluminum‐doped zinc oxide (ZnO/AZO) transparent substrate has higher solar‐to‐electric energy conversion efficiency than a DSC consisting of nanoporous ZnO film deposited on conventional fluorine‐doped tin oxide (ZnO/FTO) transparent substrate. The ZnO/AZO DSC gave an overall conversion efficiency of 7.2% whereas the ZnO/FTO yielded a conversion efficiency of 4.5%. The film‐substrate orientation and higher light harvesting of the nanoporous ZnO film on the AZO after heating in air are mainly attributed to the higher energy conversion efficiency of the ZnO/AZO DSC. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
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Modified textured surface boron-doped ZnO (ZnO:B) transparent conductive layers for thin-film solar cells were fabricated by low-pressure metal organic chemical vapor deposition (LP-MOCVD) on glass substrates. These modified textured surface ZnO:B thin films included two layers. The first ZnO:B layer, which has a pyramid- shaped texture, was deposited under conventional growth conditions, and the second layer, which has a sphere- like structure, at a relatively lower growth temperature. Typical bi-layer ZnO:B thin films exhibit a high electron mobility of 27.6 cm^2/(V.s) due to improved grain boundary states. For bi-layer ZnO:B, the haze value increases and the total transmittance decreases with the increasing film thickness of the second modification layer. When applied in hydrogenated microcrystalline silicon (μc-Si:H) thin-film solar cells, the modified textured surface ZnO:B layers present relatively higher conversion efficiency than conventional ZnO:B films. 相似文献