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1.
The use of metal oxide interlayers in polymer solar cells has great potential because metal oxides are abundant, thermally stable, and can be used in flexible devices. Here, a layer‐by‐layer (LbL) protocol is reported as a facile, room‐temperature, solution‐processed method to prepare electron transport layers from commercial ZnO nanoparticles and polyacrylic acid (PAA) with a controlled and tunable porous structure, which provides large interfacial contacts with the active layer. Applying the LbL approach to bulk heterojunction polymer solar cells with an optimized ZnO layer thickness of ≈25 nm yields solar cell power‐conversion efficiencies (PCEs) of ≈6%, exceeding the efficiency of amorphous ZnO interlayers formed by conventional sputtering methods. Interestingly, annealing the ZnO/PAA interlayers in nitrogen and air environments in the range of 60–300 °C reduces the device PCEs by almost 20% to 50%, indicating the importance of conformational changes inherent to the PAA polymer in the LbL‐deposited films to solar cell performance. This protocol suggests a new fabrication method for solution‐processed polymer solar cell devices that does not require postprocessing thermal annealing treatments and that is applicable to flexible devices printed on plastic substrates.  相似文献   

2.
The influences of morphology and thickness of zinc oxide (ZnO) buffer layers on the performance of inverted polymer solar cells are investigated. ZnO buffer layers with different morphology and thickness varying from several nanometers to ≈55 nm are fabricated by adjusting the concentration of the precursor sol. The ZnO buffer layers with nearly same surface quality but with thickness varying from ≈7 to ≈65 nm are also fabricated by spinning coating for comparison. The photovoltaic performance is found to be strongly dependent on ZnO surface quality and less dependent on the thickness. The use of dense and homogenous ZnO buffer layers enhances the fill factor and short‐circuit current of inverted solar cell without sacrificing the open‐circuit voltage of device due to an improvement in the contact between the ZnO buffer layer and the photoactive layer. Inverted devices with a dense and homogenous ZnO buffer layer derived from 0.1 M sol exhibit an overall conversion efficiency of 3.3% which is a 32% increase compared to devices with a rough ZnO buffer layer made from 1 M sol, which exhibited a power conversion efficiency of 2.5%. The results indicate that the efficiency of inverted polymer solar cells can be significantly influenced by the morphology of the buffer layer.  相似文献   

3.
To further increase the efficiency of multijunction thin‐film silicon (TF‐Si) solar cells, it is crucial for the front electrode to have a good transparency and conduction, to provide efficient light trapping for each subcell, and to ensure a suitable morphology for the growth of high‐quality silicon layers. Here, we present the implementation of highly transparent modulated surface textured (MST) front electrodes as light‐trapping structures in multijunction TF‐Si solar cells. The MST substrates comprise a micro‐textured glass, a thin layer of hydrogenated indium oxide (IOH), and a sub‐micron nano‐textured ZnO layer grown by low‐pressure chemical vapor deposition (LPCVD ZnO). The bilayer IOH/LPCVD ZnO stack guarantees efficient light in‐coupling and light trapping for the top amorphous silicon (a‐Si:H) solar cell while minimizing the parasitic absorption losses. The crater‐shaped micro‐textured glass provides both efficient light trapping in the red and infrared wavelength range and a suitable morphology for the growth of high‐quality nanocrystalline silicon (nc‐Si:H) layers. Thanks to the efficient light trapping for the individual subcells and suitable morphology for the growth of high‐quality silicon layers, multijunction solar cells deposited on MST substrates have a higher efficiency than those on single‐textured state‐of‐the‐art LPCVD ZnO substrates. Efficiencies of 14.8% (initial) and 12.5% (stable) have been achieved for a‐Si:H/nc‐Si:H tandem solar cells with the MST front electrode, surpassing efficiencies obtained on state‐of‐the‐art LPCVD ZnO, thereby highlighting the high potential of MST front electrodes for high‐efficiency multijunction solar cells. Copyright © 2015 John Wiley & Sons, Ltd.  相似文献   

4.
Submicrometer‐sized (830 ± 40 nm) mesoporous TiO2 beads are used to form a scattering layer on top of a transparent, 6‐µm‐thick, nanocrystalline TiO2 film. According to the Mie theory, the large beads scatter light in the region of 600–800 nm. In addition, the mesoporous structure offers a high surface area, 89.1 m2 g?1, which allows high dye loading. The dual functions of light scattering and electrode participation make the mesoporous TiO2 beads superior candidates for the scattering layer in dye‐sensitized solar cells. A high efficiency of 8.84% was achieved with the mesoporous beads as a scattering layer, compared with an efficiency of 7.87% for the electrode with the scattering layer of 400‐nm TiO2 of similar thickness.  相似文献   

5.
We compare the performance of two back reflector designs on the optoelectrical properties of microcrystalline silicon solar cells. The first one consists of a 5‐µm‐thick low‐pressure chemical vapor deposition (LPCVD)‐ZnO electrode combined with a white sheet; the second one incorporates an Ag reflector deposited on a thin LPCVD‐ZnO layer (with thickness below 200 nm). For this latter design, the optical loss in the nano‐rough Ag reflector can be strongly reduced by smoothing the surface of the thin underlying ZnO layer, by means of an Ar‐plasma treatment. Because of its superior lateral conductivity, the thin‐ZnO/Ag back reflector design provides a higher fill factor than the dielectric back reflector design. When decreasing the roughness of the front electrode with respect to our standard front LPCVD‐ZnO layer, the electrical cell performance is improved; in addition, the implementation of the thin‐ZnO/Ag back reflector leads to a significant relative gain in light trapping. Applying this newly optimized combination of front and back electrodes, the conversion efficiency is improved from 8.9% up to 9.4%, for cells with an active‐layer thickness of only 1.1 µm. We thereby highlight the necessity to optimize simultaneously the front and back electrodes. Copyright © 2014 John Wiley & Sons, Ltd.  相似文献   

6.
Silver nanowires (AgNWs) and zinc oxide (ZnO) are deposited on flexible substrates using fast roll‐to‐roll (R2R) processing. The AgNW film on polyethylene terephthalate (PET) shows >80% uniform optical transmission in the range of 550–900 nm. This electrode is compared to the previously reported and currently widely produced indium‐tin‐oxide (ITO) replacement comprising polyethylene terephthalate (PET)|silver grid|poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)|ZnO known as Flextrode. The AgNW/ZnO electrode shows higher transmission than Flextrode above 490 nm in the electromagnetic spectrum reaching up to 40% increased transmission at 750 nm in comparison to Flextrode. The functionality of AgNW electrodes is demonstrated in single and tandem polymer solar cells and compared with parallel devices on traditional Flextrode. All layers, apart from the semitransparent electrodes which are large‐scale R2R produced, are fabricated in ambient conditions on a laboratory roll‐coater using printing and coating methods which are directly transferrable to large‐scale R2R processing upon availability of materials. In a single cell structure, Flextrode is preferable with active layers based on poly‐3‐hexylthiophene(P3HT):phenyl‐C61‐butyric acid methylester (PCBM) and donor polymers of similar absorption characteristics while AgNW/ZnO electrodes are more compatible with low band gap polymer‐based single cells. In tandem devices, AgNW/ZnO is more preferable resulting in up to 80% improvement in PCE compared to parallel devices on Flextrode.  相似文献   

7.
To achieve high‐performance large‐area flexible polymer solar cells (PSCs), one of the challenges is to develop new interface materials that possess a thermal‐annealing‐free process and thickness‐insensitive photovoltaic properties. Here, an n‐type self‐doping fullerene electrolyte, named PCBB‐3N‐3I, is developed as electron transporting layer (ETL) for the application in PSCs. PCBB‐3N‐3I ETL can be processed at room temperature, and shows excellent orthogonal solvent processability, substantially improved conductivity, and appropriate energy levels. PCBB‐3N‐3I ETL also functions as light‐harvesting acceptor in a bilayer solar cell, contributing to the overall device performance. As a result, the PCBB‐3N‐3I ETL‐based inverted PSCs with a PTB7‐Th:PC71BM photoactive layer demonstrate an enhanced power conversion efficiency (PCE) of 10.62% for rigid and 10.04% for flexible devices. Moreover, the device avoids a thermal annealing process and the photovoltaic properties are insensitive to the thickness of PCBB‐3N‐3I ETL, yielding a PCE of 9.32% for the device with thick PCBB‐3N‐3I ETL (61 nm). To the best of one's knowledge, the above performance yields the highest efficiencies for the flexible PSCs and thick ETL‐based PSCs reported so far. Importantly, the flexible PSCs with PCBB‐3N‐3I ETL also show robust bending durability that could pave the way for the future development of high‐performance flexible solar cells.  相似文献   

8.
ZnS is a candidate to replace CdS as the buffer layer in Cu(In,Ga)Se2 (CIGS) solar cells for Cd‐free commercial product. However, the resistance of ZnS is too large, and the photoconductivity is too small. Therefore, the thickness of the ZnS should be as thin as possible. However, a CIGS solar cell with a very thin ZnS buffer layer is vulnerable to the sputtering power of the ZnO : Al window layer deposition because of plasma damage. To improve the efficiency of CIGS solar cells with a chemical‐bath‐deposited ZnS buffer layer, the effect of the plasma damage by the sputter deposition of the ZnO : Al window layer should be understood. We have found that the efficiency of a CIGS solar cell consistently decreases with an increase in the sputtering power for the ZnO : Al window layer deposition onto the ZnS buffer layer because of plasma damage. To protect the ZnS/CIGS interface, a bilayer ZnO : Al film was developed. It consists of a 50‐nm‐thick ZnO : Al plasma protection layer deposited at a sputtering power of 50 W and a 100‐nm‐thick ZnO : Al conducting layer deposited at a sputtering power of 200 W. The introduction of a 50‐nm‐thick ZnO : Al layer deposited at 50 W prevented plasma damage by sputtering, resulting in a high open‐circuit voltage, a large fill factor, and shunt resistance. The ZnS/CIGS solar cell with the bilayer ZnO : Al film yielded a cell efficiency of 14.68%. Therefore, the application of bilayer ZnO : Al film to the window layer is suitable for CIGS solar cells with a ZnS buffer layer. Copyright © 2012 John Wiley & Sons, Ltd.  相似文献   

9.
Optical analysis of hydrogenated amorphous silicon (a‐Si:H) solar cells with a periodic texture applied to the interfaces was carried out by two‐dimensional optical simulator. The optical simulator solves the electromagnetic wave equations by means of finite element method using triangular elements for the discretization of space. The periodic texture with rectangular‐like shape acts as a diffraction grating which scatters light into selective angles and thus gives a potential for significant prolongation of optical paths in thin absorber layers of the cells. Optimization of the geometrical parameters (period, height and duty‐cycle) of the periodic texture was carried out in order to obtain the highest photocurrent from a‐Si:H solar cells. The a‐Si:H solar cell with the optimal periodic texture parameters (period of 300 nm, height of 300 nm and duty cycle of 50%) and the absorber layer thickness of 300 nm generates up to 35% more photocurrent in comparison to the cell with flat interfaces. The optical analysis demonstrates that the optimal periodic texture in the a‐Si:H solar cell results in the best trade‐off between the antireflection effect at front interfaces, light scattering efficiency and the absorption losses at realistic metal back contact. Copyright © 2010 John Wiley & Sons, Ltd.  相似文献   

10.
Silicon based thin tandem solar cells were fabricated by plasma enhanced chemical vapor deposition (PECVD) in a 30 × 30 cm2 reactor. The layer thicknesses of the amorphous top cells and the microcrystalline bottom cells were significantly reduced compared to standard tandem cells that are optimized for high efficiency (typically with a total absorber layer thickness from 1.5 to 3 µm). The individual absorber layer thicknesses of the top and bottom cells were chosen so that the generated current densities are similar to each other. With such thin cells, having a total absorber layer thickness varying from 0.5 to 1.5 µm, initial efficiencies of 8.6–10.7% were achieved. The effects of thickness variations of both absorber layers on the device properties have been separately investigated. With the help of quantum efficiency (QE) measurements, we could demonstrate that by reducing the bottom cell thickness the top cell current density increased which is addressed to back‐reflected light. Due to a very thin a‐Si:H top cell, the thin tandem cells show a much lower degradation rate under continuous illumination at open circuit conditions compared to standard tandem and a‐Si:H single junction cells. We demonstrate that thin tandem cells of around 550 nm show better stabilized efficiencies than a‐Si:H and µc‐Si:H single junction cells of comparable thickness. The results show the high potential of thin a‐Si/µc‐Si tandem cells for cost‐effective photovoltaics. Copyright © 2010 John Wiley & Sons, Ltd.  相似文献   

11.
Recently, the influence of molecular weight (Mn) on the performance of polymer solar cells (PSCs) is widely investigated. However, the dependence of optimal thickness of active layer for PSCs on Mn is not reported yet, which is vital to the solution printing technology. In this work, the effect of Mn on the efficiency and especially optimal thickness of the active layer for PBTIBDTT‐S‐based PSCs is systematically studied. The device efficiency improves significantly as the Mn increases from 12 to 38 kDa, and a remarkable efficiency of 10.1% is achieved, which is among the top efficiencies of wide‐bandgap polymer:fullerene PSCs. Furthermore, the optimal thickness of the active layer is also greatly increased from 62 to 210 nm with increased Mn. Therefore, a device employing a thick (>200 nm) active layer with power conversion efficiency exceeding 10% is achieved by manipulating Mn. This exciting result is attributed to both the improved crystallinity, thus hole mobility, and preferable polymer orientation, thus morphology of active layer. These findings, for the first time, highlight the significant impact of Mn on the optimal thickness of active layer for PSCs and provide a facile way to further improve the performance of PSCs employing a thick active layer.  相似文献   

12.
The analytical potential of radiofrequency pulsed glow discharge optical emission spectrometry (rf‐PGD‐OES) is investigated for quantitative depth profiling analysis of thin‐film solar cells (TFSC) based on hydrogenated amorphous silicon (a‐Si:H). This method does not require sampling at ultra‐high‐vacuum conditions, and so it facilitates higher sample throughput than do reference techniques. In this paper, the determination of compositional depth profiles of a‐Si:H TFSC was performed by resorting to a multi‐matrix calibration procedure. For this purpose, certified reference materials, as well as laboratory standards based on individual layers of doped a‐Si:H, were simultaneously employed to build the analytical calibration curves. Results show that rf‐PGD‐OES allows us to discriminate the different layers of photovoltaic devices: the front contact composed by ZnO:Al2O3 (AZO), the a‐Si:H layer (the B‐doped, intrinsic a‐Si:H and P‐doped films), the AZO/Al back contact and substrate. A good agreement with the nominal values for element concentrations (e.g. 0.4% of H, 1.5% of B and 3.7% of P) and layer thicknesses (in the range of 950 nm for the front contact and 13 nm for the P‐doped a‐Si:H layer) was obtained, demonstrating the ability of rf‐PGD‐OES for a direct, sensitive and high‐depth‐resolution analysis of photovoltaic devices. Moreover, diffusion processes between the coating layers, which could have an important influence on the final efficiency of TFSC, can be identified as well. Hence, the findings support the use of rf‐PGD‐OES as an analysis method in the development of photovoltaic thin films. Copyright © 2013 John Wiley & Sons, Ltd.  相似文献   

13.
The fabrication of a solution‐processed polymer tandem cell by stacking two single cells in series is reported by de Boer and co‐workers on p. 1897. The bottom and top cell are complementary with respect to their absorption spectra and the layer thickness of the bottom cell was optimized in order to create an optical cavity that efficiently transmits the required wavelength for the top cell. The combination of this tandem architecture with more efficient small‐bandgap materials will enable the realization of highly efficient organic solar cells. A solution‐processed polymer tandem cell fabricated by stacking two single cells in series is demonstrated. The two bulk‐heterojunction subcells have complementary absorption maxima at λmax ~ 850 nm and λmax ~ 550 nm, respectively. A composite middle electrode is applied that serves both as a charge‐recombination center and as a protecting layer for the first cell during spin‐coating of the second cell. The subcells are electronically coupled in series, which leads to a high open‐circuit voltage of 1.4 V, equal to the sum of each subcell. The layer thickness of the first (bottom) cell is tuned to maximize the optical absorption of the second (top) cell. The performance of the tandem cell is presently limited by the relatively low photocurrent generation in the small‐bandgap polymer of the top cell. The combination of our tandem architecture with more efficient small‐bandgap materials will enable the realization of highly efficient organic solar cells in the near future.  相似文献   

14.
Nanocomposite buffer layer based on metal oxide and polymer is merging as a novel buffer layer for organic solar cells, which combines the high charge carrier mobility of metal oxide and good film formation properties of polymer. In this work, a nanocomposite of zinc oxide and a commercialized available polyethylenimine (PEI) was developed and used as the cathode buffer layer (CBL) for the inverted organic solar cells and p-i-n heterojunction perovskite solar cells. The cooperation of PEI in nano ZnO offers a good film forming ability of the composite material, which is an advantage in device fabrication. In addition, power conversion efficiency (PCE) of the ZnO:PEI CBL based device was also improved when compared to that of ZnO-only and PEI-only devices. The highest PCE of P3HT:PC61BM and PTB7-Th:PC61BM devices reached to 3.57% and 8.16%, respectively. More importantly, there is no obvious device performance loss with the increase of the layer thickness of ZnO:PEI CBL to 60 nm in organic solar cells, which is in contrast to the PEI based devices, whose device performance decreases dramatically when the PEI layer thickness is higher than 6 nm. Such a nano composite material is also applicable in inverted heterojunction perovskite solar cells. A PCE of 11.76% was achieved for the perovskite solar cell with a thick ZnO:PEI CBL (150 nm) CBL, which is around 1.71% higher than that of the reference cell without CBL, or with ZnO CBL. In addition, stability of the organic and perovskite solar cells having ZnO:PEI CBL was also found to be improved in comparison with that of PEI based device.  相似文献   

15.
We compare standard and inverted bulk heterojunction solar cells composed of PCPDTBT:PC70BM blends. Inverted devices comprising 100 nm thick active layers exhibited short circuit currents of 15 mA/cm2, 10% larger than in corresponding standard devices. Modeling of the optical field distribution in the different device stacks proved that this enhancement originates from an increased absorption of incident light in the active layer. Internal quantum efficiencies (IQEs) were obtained from the direct comparison of experimentally derived and modeled currents for different layer thicknesses, yielding IQEs of ∼70% for a layer thickness of 100 nm. Simulations predict a significant increase of the light harvesting efficiency upon increasing the layer thickness to 270 nm. However, a continuous deterioration of the photovoltaic properties with layer thickness was measured for both device architectures, attributed to incomplete charge extraction. On the other hand, our optical modeling suggests that inverted devices based on PCPDTBT should be able to deliver high power conversion efficiencies (PCEs) of more than 7% provided that recombination losses can be reduced.  相似文献   

16.
High efficiency dye‐sensitized solar cells (DSSCs) are fabricated with a heterostructured photoanode that consists of a 500‐nm‐thick organized mesoporous TiO2 (om‐TiO2) interfacial layer (IF layer), a 7 or 10‐μm thick nanocrystalline TiO2 layer (NC layer), and a 2‐μm‐thick mesoporous Bragg stack (meso‐BS layer) as the bottom, middle and top layers, respectively. An om‐TiO2 layer with a high porosity, transmittance, and interconnectivity is prepared via a sol‐gel process, in which a poly(vinyl chloride)‐g‐poly(oxyethylene methacrylate) (PVC‐g‐POEM) graft copolymer is used as a structure‐directing agent. The meso‐BS layer with large pores is prepared via alternating deposition of om‐TiO2 and colloidal SiO2 (col‐SiO2) layers. Structure and optical properties (refractive index) of the om‐TiO2 and meso‐BS layers are studied and the morphology of the heterostructured photoanode is characterized. DSSCs fabricated with the heterostructured IF/NC/BS photoanode and combined with a polymerized ionic liquid (PIL) exhibit an energy conversion efficiencies of 6.6% at 100 mW/cm2, one of the highest reported for solid‐state DSSCs and much larger than cells prepared with only a IF/NC layer (6.0%) or a NC layer (4.5%). Improvements in energy conversion efficiency are attributed to the combination of improved light harvesting, decreased resistance at the electrode/electrolyte interface, and excellent electrolyte infiltration.  相似文献   

17.
Multilayered polymer thin‐film solar cells have been fabricated by wet processes such as spin‐coating and layer‐by‐layer deposition. Hole‐ and electron‐transporting layers were prepared by spin‐coating with poly(3,4‐ethylenedioxythiophene) oxidized with poly(4‐styrenesulfonate) (PEDOT:PSS) and fullerene (C60), respectively. The light‐harvesting layer of poly‐(p‐phenylenevinylene) (PPV) was fabricated by layer‐by‐layer deposition of the PPV precursor cation and poly(sodium 4‐styrenesulfonate) (PSS). The layer‐by‐layer technique enables us to control the layer thickness with nanometer precision and select the interfacial material at the donor–acceptor heterojunction. Optimizing the layered nanostructures, we obtained the best‐performance device with a triple‐layered structure of PEDOT:PSS|PPV|C60, where the thickness of the PPV layer was 11 nm, comparable to the diffusion length of the PPV singlet exciton. The external quantum efficiency spectrum was maximum (ca. 20%) around the absorption peak of PPV and the internal quantum efficiency was estimated to be as high as ca. 50% from a saturated photocurrent at a reverse bias of ?3 V. The power conversion efficiency of the triple‐layer solar cell was 0.26% under AM1.5G simulated solar illumination with 100 mW cm?2 in air.  相似文献   

18.
A solution‐processed polymer tandem cell fabricated by stacking two single cells in series is demonstrated. The two bulk‐heterojunction subcells have complementary absorption maxima at λmax ~ 850 nm and λmax ~ 550 nm, respectively. A composite middle electrode is applied that serves both as a charge‐recombination center and as a protecting layer for the first cell during spin‐coating of the second cell. The subcells are electronically coupled in series, which leads to a high open‐circuit voltage of 1.4 V, equal to the sum of each subcell. The layer thickness of the first (bottom) cell is tuned to maximize the optical absorption of the second (top) cell. The performance of the tandem cell is presently limited by the relatively low photocurrent generation in the small‐bandgap polymer of the top cell. The combination of our tandem architecture with more efficient small‐bandgap materials will enable the realization of highly efficient organic solar cells in the near future.  相似文献   

19.
An effective method for depositing highly transparent and conductive ultrathin silver (Ag) electrodes using minimal oxidation is reported. The minimal oxidation of Ag layers significantly improves the intrinsic optical and structural properties of Ag without any degradation of its electrical conductivity. Oxygen‐doped Ag (AgOx) layers of thicknesses as low as 6 nm exhibit completely 2D and continuous morphologies on ZnO films, smaller optical reflections and absorbances, and smaller sheet resistances compared with those of discontinuous and granular‐type Ag layers of the same thickness. A ZnO/AgOx/ZnO (ZAOZ) electrode using an AgOx (O/Ag = 3.4 at%) layer deposited on polyethylene terephthalate substrates at room temperature shows an average transmittance of 91%, with a maximum transmittance of 95%, over spectral range 400?1000 nm and a sheet resistance of 20 Ω sq?1. The average transmittance value is increased by about 18% on replacing a conventional ZnO/Ag/ZnO (ZAZ) electrode with the ZAOZ electrode. The ZAOZ electrode is a promising bottom transparent conducting electrode for highly flexible inverted organic solar cells (IOSCs), and it achieves a power conversion efficiency (PCE) of 6.34%, whereas an IOSC using the ZAZ electrode exhibits a much lower PCE of 5.65%.  相似文献   

20.
Electrically conducting aluminum (Al)‐doped ZnO nanorods (NRs) film has been introduced as an anti‐reflective (AR) layer for effective light trapping in chalcogenide thin‐film solar cells. Results indicate that the Al‐doping significantly reduced the electrical contact resistance between the Ag top electrode and the AR layer. The Al‐doped ZnO NRs exhibited low average reflectance (4.5%) over the entire visible and near‐infrared range, and changed the nature of electrical contact between the Ag electrode and the AR layer from Schottky to Ohmic. Finally, the CuInS2 solar cell coated with the Al‐doped ZnO NRs exhibited huge enhancement in photovoltaic efficiency from 9.57% to 11.70% due to the lowering series resistance and the increase in the short‐circuit current density, when compared with that of a solar cell without the AR layer. Copyright © 2014 John Wiley & Sons, Ltd.  相似文献   

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