基于RSA密码体制（t，n）门限秘密共享方案

基于RSA密码体制,提出了一个新的(t,n)门限秘密共享方案。在该方案中,秘密份额由各参与者自己选择,秘密分发者不知道每个参与者所持有的份额,而且秘密份额长度与秘密长度相同。在秘密恢复过程中,每个参与者能够验证其他参与者是否进行了欺骗。每个参与者只需维护一个秘密份额,就可以实现对多个秘密的共享。方案的安全性是基于RSA密码体制和Shamir的(t,n)门限秘密共享方案的安全性。     

基于RSA密码体制（t，n）门限秘密共享方案

基于RSA密码体制,提出了一个新的(t,n)门限秘密共享方案.在该方案中,秘密份额由各参与者自己选择,秘密分发者不知道每个参与者所持有的份额,而且秘密份额长度与秘密长度相同.在秘密恢复过程中,每个参与者能够验证其他参与者是否进行了欺骗.每个参与者只需维护一个秘密份额,就可以实现对多个秘密的共享.方案的安全性是基于RSA密码体制和Shamir的(t,n)门限秘密共享方案的安全性.     

双重门限秘密共享方案

基于RSA密码体制、Shamir门限方案和哈希函数的安全性,设计了一种双重门限秘密共享方案。方案中,参与者只需维护一个秘密份额,可实现对多个秘密的共享。秘密份额由参与者确定和保管,秘密分发者也不知晓,秘密共享过程中,只需出示伪秘密份额。方案不需要维护安全信道,算法能够保证信息安全传送,以及验证参与者是否进行了欺骗。     

基于双线性变换的可证明安全的秘密共享方案

提出了利用双线性对构建可证明安全的秘密共享方案的新方法.首先,基于公钥密码体制的语义安全的标准定义,提出了适合秘密共享方案的语义安全定义.然后,提出了一个新的基于双线性对的门限秘密共享方案,并对其正确性、安全性和性能进行分析讨论和证明.相比较于现有的大多数方案,此方案是可证明安全的,同时,该方案将参与者私钥计算和秘密分发过程分离,且秘密分发者无需安全保存参与者私钥,具有更好的安全性和效率,更适合实际应用.     

基于椭圆曲线密码体制的动态秘密共享方案

文章给出了一个基于椭圆曲线公钥密码体制的动态秘密共享方案，有效地解决了共享秘密的动态更新，子密钥动态分配和欺诈问题，且易于实现，效率高。方案的安全性基于求解有限域上椭圆曲线离散对数的困难性。     

一种安全的门限多秘密共享方案

提出了一种可认证的门限多秘密共享的新方案,通过成员提供的子密钥的一个影子来恢复秘密,由影子难以得到子密钥本身,因此可以复用,也即通过同一组子密钥共享多个秘密.该方案可以对分发者发布的信息和参与者提供的子密钥影子进行认证,从而可以抵御分发者欺骗和参与者欺骗.方案的安全性基于RSA密码系统和Shamir的(k,n)门限秘密共享方案.另外,本文还提出两种对这类门限多秘密共享方案的欺骗方法,能不同程度的破坏几个已有方案的安全性,但本文所提出的方案对这些欺骗有免疫能力.该方案是计算安全的,并且性能较现有诸方案更好.     

没有SDC的(t，n)门限秘密共享方案

利用椭圆曲线离散问题对数问题的难解性,给出了基于椭圆曲线密码体制的(t,n)门限秘密共享方案。基于门限秘密共享方案一般分为需要SDC和不需要SDC两类,在分布式环境下,一个被所有成员信任的SDC并不存在,不需要SDC的门限秘密共享方案的安全性得到很大的提高,该方案中由组成员共同生成群公钥和私有密钥。并给出了当新成员加入时,无SDC下的周期密钥分片的更新方案。还给出了一个本方案数据实例,最后对本方案的安全性进行了分析。     

一种基于秘密共享的椭圆曲线签名方案

RSA和ECC是目前广泛使用的两种公钥体制，根据现在的研究结果，ECC的应用前景比RSA更好。公钥体制的一个主要应用是数字签名，而基于秘密共享的签名方案是提高数字签名系统安全性的好方法。国内外已有很多基于秘密共享的RSA签名方案，沿着这一思路研究了基于秘密共享的ECC签名方案，给出一个签名和验证速度都比ECDSA更快的签名算法，并在此基础上给出一个简单的基于秘密共享的椭圆曲线签名方案。     

基于椭圆曲线密码体制信息隐藏设计与实现

文中利用椭圆曲线密码体制密钥短,安全性高的特点,并结合改进的LSB算法,将加密通信和信息隐藏相结合,提出基于椭圆曲线密码体制与改进的LSB算法的秘密信息隐藏方案。文中对方案的秘密信息嵌入和提取过程都进行了详细阐述。可以根据BMP图像的特点实现是否有秘密信息嵌入的检测,并给出了方案实现的信息隐藏的效果图。     

适用于任意接入结构的可验证多秘密分享方案

对一般接入结构上的可验证多秘密分享进行了研究，给出了可适用于任意接入结构的一类可验证多秘密分享方案的构造方法。用这种方法构造的可验证多秘密分享方案具有以下性质：可在一组分享者中同时分享多个秘密；分发者发送给每一分享者的秘密份额都是可公开验证的；关于每一秘密的公开信息也是可公开验证的；恢复秘密时可防止分享者提供假的份额。分析表明，用此方法构造的可验证多秘密分享方案不仅是安全的，而且是高效的。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-