微器件操作末端执行器研究现状

微纳制造技术和微机电系统(MEMS)的迅猛发展,推动了微器件向微型化、集成化、多功能化方向发展。微器件操作末端执行器是微操作工具与微器件直接作用的部件,具有重要研究意义。综述了微器件操作末端执行器的研究现状和成果;对国内外微器件操作末端执行器进行了汇总和分类;对微器件操作末端执行器的工作原理和结构进行了介绍;基于对接触式和非接触式末端执行器研究现状的总结,分析了各种末端执行器的优势和局限。最后,讨论了微器件操作末端执行器的应用现状和面临的挑战,并对末端执行器的发展进行了展望。该研究为微器件操作末端执行器的选取和开发提供了技术参考。     

微纳操作器运动学分析

微纳操作器是纳米操作系统中的关键部件之一。本文重点分析了并联微纳操作器的运动学正解和道解,推导出了运动学正解的雅可比矩阵。依据微纳操作器的可操作空间最大化,对微纳操作器的雅可比矩阵进行了分析。分析结果对并联微纳机构的参数选择与设计具有一定的指导意义。     

基于压电驱动的靶球筛选操作机理及实验研究

针对惯性约束聚变中靶球筛选操作的粘着问题,提出一种基于压电驱动控制的微操作方法,并结合微机电系统(MEMS)技术和微驱动方法,研制压电驱动操作模块用于实验研究.首先,分析微尺度对象粘着机理并进行粘着接触模型的建立,并在此基础上提出对操作工具施加振动,利用惯性力作用克服粘着力的动态操作方法;同时,结合靶球筛选操作的特点,分析操作控制策略;最后建立了基于压电驱动的微操作实验系统.针对直径Φ50～400 μm的靶球对象进行操作实验,成功实现了靶球样品的高效、准确拾取和释放,拾取和释放成功率大于90％.     

基于微球透镜远场超分辨率成像方法研究

在可见光波段,传统光学显微镜的成像分辨率被限制到200nm。为了突破衍射极限,采用了将微球与传统光学显微镜相结合的方法来获得远场超分辨率成像。首先通过理论分析平行光通过微纳结构物体后物光波在空气中的传输,进而分析微球将倏逝波转换成传输波实现远场超分辨的成像机理;其次通过仿真研究了微球的光纳米喷射特性,可知微球光纳米喷射的半径尺寸小于入射光波长的一半;最后搭建了基于微球与传统光学显微镜相结合的超分辨率成像实验系统。结果表明,将蓝光光盘作为被测物体,通过该成像系统可获得100nm的远场超分辨率成像; 该成像系统可以对微纳元件结构进行检测。这一结果对光刻技术、生物医学等领域是有帮助的。     

一种集成三维微力传感器的微夹持器研制

微操作中力的检测与控制是实现无损伤操作的关键。因此,该文提出了一种以压阻检测技术为基础,集成三维微力传感器的微夹持器。传感器标定实验结果表明,该传感器具有耦合小,测量分辨率高,线性度好的优点。传感器量程为-10~ 10 mN,在x、y向的分辨率均为2.4μN,z向的分辨率为4.2μN。微夹持器采用压电陶瓷驱动两级柔性放大机构,实现张合量300μm,完成了微夹持实验。     

两级位移放大微夹持器的研究

微夹持器是完成微操作、微装配作业任务的重要工具,其体积、质量、张合量、微夹持力等是微夹持器设计过程中的重要指标。利用压电陶瓷作为微驱动元件设计了一种具有两级位移放大的微夹持器,并采用有限元软件对其进行张合量、微夹持力的分析。经实验测试,验证了所设计的微夹持器的合理性和实用性。     

介质微球光场调控制备多级银微纳结构及其表面增强拉曼光谱研究（特邀）

表面增强拉曼光谱(SERS)是一种高灵敏的分子振动指纹光谱技术。光辅助化学还原制备SERS衬底具有成本低、环境适用性强等优势,但在微纳结构多样化制造方面存在局限性,限制了SERS衬底的检出性能。笔者系统研究了介质微球独特的聚焦特性,揭示了微球直径对聚焦光场分布的调控规律,在微球底部实现了可控的光场空间分布,实现了多级银微纳结构的快速光还原合成。进一步,通过优化制备参数(前驱液浓度比、激光辐照功率及辐照时间),成功制备了具有优异拉曼增强效果的多级银纳米颗粒/银微环/介质微球(AgNPs/AgMRs/MS)复合结构。通过介质微球和多级银微纳结构(AgNPs/AgMRs)中的光场耦合,即微球聚焦、多级银微纳结构局域表面等离激元共振以及复合结构定向发射等,实现了10^-14 mol/L的痕量检测,增强因子可达9.50×10⁹,为光化学还原制备高性能介质-金属复合SERS衬底提供了新思路。     

基于SEM的压电式微纳操纵系统

微纳操纵系统是当前先进制造技术领域的一个重要发展方向.为了实现在亚微米及纳米尺度下进行实时观测下的操纵,设计了一种基于扫描电镜(SEM)的压电式微纳操纵系统,本系统由数字式环境扫描电子显微镜系统、精密工件台、微纳操作机构、图形发生器和计算机系统组成,采用数字式环境扫描电子显微镜作为微纳操作的观测器,在SEM的样本室内安装微纳操作臂,计算机系统控制微纳操作臂,使其在SEM的实时观测下对放置在精密工件台上的样本进行操纵,并且还可利用图形发生器进行电子束曝光以制备微纳结构.实验证明,本系统不仅能适于在各种环境下进行微纳操纵,且还可制作微纳结构,具有很强的实用性.     

包覆较厚介质层的金属铜球在聚焦光场中的捕获特性研究

基于核(金属)/壳(介质)微球的单光束梯度阱模型,计算了外面包覆较厚聚苯乙烯的铜微球在聚焦光场中的轴向散射力、梯度力以及合力,分析了表面被高度氧化的铜微球的轴向捕获力。不同于纯金属米氏粒子,外层包覆较厚介质材料的金属粒子在聚焦光场中容易被捕获但不能被捕获在聚焦光束的高强度区域。光学微操作实验显示:高度氧化的铜微球能被聚焦的高斯光束捕获并可以在平面内移动。理论和实验结果便于研究核壳结构金属微粒的光学特性,进一步拓展了光镊技术的应用范围。     

面向三维组装的微纳平台设计与研究

针对20~40μm尺寸范围的微对象夹持需求,设计了一种压电驱动的微组装夹持器平台。使用有限元分析优化了夹持器的结构参数。该平台可以实现两指与三指操作模式的转换及对多种微对象的柔性操作。该文绘制了实验平台中压电陶瓷的驱动电压与执行末端位移的关系,单指的驱动范围0~41μm。压电陶瓷对该平台的输出位移分辨率达到了0.5μm/V。以直径20μm、40μm两种尺寸的硼硅酸盐玻璃球为操作对象,完成了夹持、释放及三维模型组装实验。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.