MIMO-OFDM中基于KSDA和SQRD的联合检测算法

球形译码算法的检测性能最接近最大似然检测算法,但其计算复杂度仍然较高。为了在计算复杂度和系统性能之间取得良好折中,在研究标准球形译码的基础上,提出一种新的球形译码改进算法。新算法由快速球形译码与基于MMSE准则的SQRD算法构成。该算法在高信噪比时采用SQRD算法,低信噪比时采用KSDA算法。仿真结果表明,该算法在降低球形译码算法复杂度的同时获得了较好的系统性能。     

一种低复杂度的MIMO预处理球形译码算法

提出了一种新的低复杂度MIMO预处理球形译码算法.球形译码算法是MIMO译码方案达到最大似然性能的低复杂度译码算法,但当信噪比较低或调制阶数较高时,该算法的复杂度仍然很大,甚至接近穷尽搜索方法的复杂度.本文利用迫零译码的初始估值作为软信息,对信道矩阵各列进行重排列,从而改变解向量中各维信号的求解顺序,因此大大减少了低信噪比或较高调制阶数的球形译码计算复杂度.仿真结果表明,当Eb/No为0～3时,16QAM调制方式下的V-BLAST译码复杂度减少了近1/3.     

降低高条件数信道下的球形译码算法复杂度的方法

MIMO系统中,球形译码可以在保证接近ML检测性能的前提下大大降低检测复杂度。但当信道矩阵条件数很高时,球形译码的复杂度仍然会很高。在分析了这一现象的原因后,本文提出了在高层对权值进行合并的一种球形译码算法,因为其减小了译码搜索过程中对树的高层节点的访问的概率,由此降低了搜索复杂度。仿真结果表明,这种算法在低信噪比、高条件数时可以节约20％的浮点运算操作次数。     

基于贪心策略的大规模MIMO系统信号检测算法

针对传统球形译码性能和计算复杂度受到初始半径及搜索策略制约的问题,提出了一种新的基于M算法的贪心策略球形译码检测算法,对树搜索的方法进行了改进,先将该层信号集合中的距离增量进行排序,然后选择距离增量最小的M个点为信号点,这样每一次选取的信号点相对该层都是局部最优的.仿真结果表明,相比于传统球形译码检测算法,当M为1时,该算法可以降低约30％的计算复杂度.使球形译码算法的效率得到了很大的提高,可以运用于大规模MIMO系统中.     

极化码序列连续删除译码算法的改进设计

极化码连续删除译码算法性能和传统的LDPC码存在一定差距。序列连续删除算法(SCL)的提出极大地改善译码性能,是极化码推向实际应用中的重要一步。但是该算法复杂度较高,延迟大。改进的序列连续删除(SCL)译码算法是基于改善极化码码长受限的情况,文中描述SCL算法是通过码树上的搜索序列路径来表示译码过程。改进的算法通过减少译码算法在码树上的序列路径来降低时间和空间复杂度。通过仿真表明,改进的算法有效地降低了译码的复杂度同时在性能上也接近最大似然(ML)译码算法。     

编码MIMO系统中一种低复杂度次优软检测算法

提出了一种低复杂度次优编码MIMO系统软检测算法.在编码MIMO系统的迭代译码中,信道译码需要MIMO检测输出每一比特的软信息,而软信息的计算需要巨大的计算量.本文在不同的迭代次数中分别利用球形译码的硬判决信息和编码比特先验信息得到发射向量的估计值.在这个估计值的基础上计算MIMO检测中每一比特的软信息,从而避免了常规的穷尽搜索检测算法,减少了复杂度.通过分析和仿真,本算法在有限性能损失的前提下使复杂度得到了极大减少.在相同没置下,本算法的一帧数据仿真时间不到原算法的1/20,并且对于不同的调制方式复杂度基本不变,达到了性能和复杂度的较好折中.     

分组码的软判决伪序列译码

本文提出一种在形式上类似于卷积码的序列译码的一般线性分组码的软判决伪序列译码算法，利用广义限译码原理及二元有向树的性质与分枝限搜索技术，降低了译码复杂性，其设备复杂度小于Ｃｈａｓｅ译码器，模拟结果表明，该算法的误码输出性能接近维持比较最大似然译码，好于ＣｈａｓｅⅡ算法，且译码速度与ＣｈａｓｅⅡ算法接近。     

基于EM的低复杂度迭代载波同步算法

编码辅助载波同步算法充分利用译码软信息,可获得较理想的同步性能,但是目前这类算法存在复杂度高、处理时间长的问题。首先在推导迭代载波同步中后验均值与译码软信息关系的基础之上,通过选择性地进行译码判决反馈来减少不必要的计算点数,再根据前两次的迭代结果自适应地减小频率搜索区间长度,从而大幅降低同步参数估计的运算量。仿真结果表明,该算法能够有效工作在低信噪比环境下,可获得接近理想同步条件下的译码性能。     

一种用于高频谱利用率非确定性MIMO系统的高效球形译码算法

球形译码是多输入多输出(MIMO)系统中一种高效的检测算法。但对于非确定性MIMO系统,已有球形译码算法不能同时获得最优解和最低搜索树。针对该问题,提出了一种高效球形译码检测算法,通过增加常量对最大似然代价函数进行等价转化,使得球形译码算法获得最优解的同时具有最低搜索树,大大降低了球形译码算法中的搜索复杂度。仿真结果表明,对于高阶正交幅度调制(M-QAM,M>4)方式,本文算法优于修正的CT(Modified Cui and Tellambura,MCT)算法,大大提高了球形译码中的搜索效率。此外,仿真结果给出了最小复杂度下的最优参数值。     

稀疏码分多址系统一种改进的检测算法

稀疏码分多址(SCMA)系统中基于球形译码算法(SD)由于具有优良的性能受到越来越多的关注,然而现有基于SD的算法只能用于某些特定星座结构的检测,导致其应用受限。该文提出一种适用于任意星座且性能达到最大似然(ML)算法性能的改进球形译码(ISD)算法。该算法将用户星座图拆分,并将用户星座图转换为多层树结构,利用对树结构的搜索完成译码操作,并且对树的搜索是从高层向低层进行的。因此,可以将SCMA检测转换成最小化树结构部分度量问题;同时,所提出的改进算法对星座图的结构无任何限制,所以该算法适用于任意类型的星座图。此外,由于SCMA的稀疏性,每一层的部分度量均与分配给每个资源元素的用户无关,从而进一步降低了计算复杂度。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.