一种基于节点移动性的AODV改进协议

移动Ad hoc网络是移动节点动态临时组建的自组织网络,路由协议一直是Ad hoc网络研究的关键问题.文中提出了一种新的AODV改进协议AODV-NM,它能够根据节点速度自适应的调整RREQ泛洪频率,实现稳定路径的选取.仿真结果表明,AODV-NM能够有效降低网络路由负荷,同时改善了时延与分组投递率等性能.     

Ad hoc网络中基于能量的AODV双径路由算法研究

在Ad hoc网络中AODV路由的健壮性、路由开销、网络的生存时间以及分组报文传送率等都是评价该算法优良的指标。为了提高该路由算法的各项指标本文提出了改进的路由算法协议,在Ad hoc网络中避免使用的低于能量阈值的节点作为路由节点以提高整体网络的生存时间,提供主次路径使报文的到达率、网络的健壮性得以提高,同时也减少了链路的修复,减少了路由开销。     

基于OPNET仿真平台的AODV协议的性能研究

AODV(Ad hoc On-demand Distance Vector Routing)路由协议是面向移动Adhoc网络的,在介绍了移动Ad hoc网络的特征、现有路由协议和AODV路由协议的发展过程之后,重点分析了AODV协议的特征、路由建立、维护过程,并基于OPNET平台仿真了AODV协议的性能(包括路由发现时间、协议效率、平均跳数、数据吞吐量),总结了目前AODV协议存在的问题及其改进的主要方法,最后对AODV协议改进的前景进行了预测。     

无线Ad hoc网与Internet的互连

通过移动IP和AODV协议合作,无线Ad hoc网内的移动节点可以与外地代理之间进行多跳通信,从而实现无线Ad hoc网与Internet的互连。本文首先分析了AODV协议,然后对无线Ad hoc网络与Internet互连的技术方案,包括数据结构、代理广播消息、外地代理搜索、注册、路由发现与数据传输、切换与负载平衡问题等进行了详细讨论。     

移动Ad hoc网络路由协议标准

通过重点说明互联网工程任务组(IETF)已通过的两个移动Ad hoc网络路由协议标准,使得相关工程人员在对应用于此种网络的路由协议有一个整体认识基础之上,进一步加深对移动Ad hoc网络原理的理解.     

基于Ad hoc的按需路由协议DSR的优化研究与实现

无线Ad hoc网络是一种不需要基础设施的自组织和自管理网络,网络中所有的节点同时具有终端和路由器的功能。因此网络可以通过节点路由发现机制转发分组,并进行路由维护。文中对DSR(动态源路由协议)的路由发现过程进行了优化,并采用OPNET仿真软件对基于DSR协议的Ad hoc网络的路由开销和时延等关键参数进行了仿真统计,分析了改进后的路由协议对网络质量的影响。     

Ad Hoc网络中一种改进的AODV路由协议

Ad Hoc网络路由协议的设计一直是Ad Hoc网络中的热点问题。本文在AODV协议的基础上,通过为RREQ消息设置时限,将节点的剩余生存周期和负载情况综合考虑,提出了一种改进的AODV协议。仿真结果表明,改进后的协议提高了分组交换率,降低了网络开销,从而延长了网络生存时间并且提高了网络性能。     

基于MAODV的无线自组网设备设计

在移动Ad hoc网络技术的研究中,由于受到节点移动性、带宽和能量等的限制,传统的基于有线网络的多播路由协议无法直接应用到Ad hoc网络中。研究和设计稳定高效的多播路由协议并将其应用到实际的网络中己成为当前Ad hoc网络研究领域的热点。文中结合无线自组网节点设计的项目,论证了系统的设计方案,详细地分析了无线自组网的MAODV路由协议,设计实现了在嵌入式设备中MAODV的改进方案,并且指出了下一步工作的重点。     

一种基于竞争转发的城市场景车载 Ad Hoc网络路由算法

 论文提出了一种适用于城市场景下的基于竞争转发的车载Ad hoc网络路由算法,算法摒弃了HELLO消息的使用,利用分布式的竞争策略根据邻居节点所处的地理位置信息进行下一跳节点的选择.数据转发使用选定点路由同时利用了实时的道路交通信息和网络拓扑结构信息进行选定点选择.采取暂存转发策略处理网络分割现象.仿真结果表明该算法比其他类似算法具有更高的数据包递交率和较低的数据延迟.     

基于UWB的Ad hoc无线网络

介绍了采用超宽带(UWB)技术的Ad hoc无线网络,重点阐述了网络的两个关键技术MAC协议和路由算法协议.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-