A novel power amplifier structure for RFID tag applications

A novel matching method between the power amplifier(PA) and antenna of an active or semi-active RFID tag is presented.A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240×70μm~2 in a 0.18μm CMOS process due to saving two on-chip integrated inductors.Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal,the PA shows a measured output power of 8 dBm at the 1 dB compression point.     

A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design

A fully monolithic power amplifier(PA) for multi-mode front end IC integration is presented.The PA is fabricated in an IBM 7WL 0.18μm SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization,the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz,the output 1 dB compression point is 21 dBm at 5 dBm input,and the PAE is 18%.This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.     

一种应用于RFID标签的新型功率放大器设计

A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm² in a 0.18 μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point.     

X 波段氮化镓合成固态放大器

Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.     

A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE

正We report a high power Ku band internally matched power amplifier(IMPA) with high power added efficiency(PAE) using 0.3μm AlGaN/GaN high electron mobility transistors(HEMTs) on 6H-SiC substrate.The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm.To improve the bandwidth of the amplifier,a T type pre-matching network is used at the input and output circuits,respectively.After optimization by a three-dimensional electromagnetic(3D-EM) simulator,the amplifier demonstrates a maximum output power of 42.5 dBm(17.8 W),PAE of 30%to 36.4%and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10%duty cycle pulse condition when operated at V_(ds) = 30 V and V_(gs)=—4 V.At such a power level and PAE,the amplifier exhibits a power density of 4.45 W/mm.     

A 2.4 GHz power amplifier in 0.35μm SiGe BiCMOS

This paper presents a 2.4 GHz power amplifier(PA) designed and implemented in 0.35μm SiGe BiCMOS technology.Instead of chip grounding through PCB vias,a metal plate with a mesa connecting ground is designed to decrease the parasitics in the PCB,improving the stability and the gain of the circuit.In addition,a low-pass network for output matching is designed to improve the linearity and power capability.At 2.4 GHz,a P_(1dB) of 15.7 dBm has been measured,and the small signal gain is 27.6 dB with S_(11)<-7 ...     

一种低于1dB噪声系数的单片集成GNSS低噪声放大器

A monolithic integrated low noise amplifier(LNA) based on a SiGe HBT process for a global navigation satellite system(GNSS) is presented. An optimizing strategy of taking parasitic capacities at the input node into consideration is adopted and a method and design equations of monolithically designing the LC load and the output impedance matching circuit are introduced. The LNA simultaneously reaches excellent noise and input/output impedance matching. The measurement results show that the LNA gives an ultra-low noise figure of 0.97 dB, a power gain of 18.6 dB and a three-order input intermodulation point of..6 dBm at the frequency of 1.575 GHz. The chip consumes 5.4 mW from a 1.8 V source and occupies 600×650 μm2 die area.     

一种针对中国超宽带标准的CMOS PA

A 6–9 GHz ultra-wideband CMOS power amplifier (PA) for the high frequency band of China's UWB standard is proposed. Compared with the conventional band-pass filter wideband input matching methodology, the number of inductors is saved by the resistive feedback complementary amplifying topology presented. The output impendence matching network utilized is very simple but efficient at the cost of only one inductor. The measured S₂₂ far exceeds that of similar work. The PA is designed and fabricated with TSMC 0.18 μ m 1P6M RF CMOS technology. The implemented PA achieves a power gain of 10 dB with a ripple of 0.6 dB, and S₁₁ < –10 dB over 6–9 GHz, S₂₂ < –35 dB over 4–10 GHz. The measured output power at the 1 dB compression point is over 3.5 dBm from 6 to 9 GHz. The PA dissipates a total power of 21 mW from a 1.8 V power supply. The chip size is 1.1 × 0.8 mm².     

具有平坦增益的X波段GaN单片功率放大器

A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip Al Ga N/Ga N HEMT technology on a semiinsulating Si C substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 d B with a gain ripple of 0.35 d B over 9.1–11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used Ga N HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9–11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 d Bm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited.     

A 6-9 GHz ultra-wideband CMOS PA for China's ultra-wideband standard

A 6-9 GHz ultra-wideband CMOS power amplifier(PA) for the high frequency band of China's UWB standard is proposed.Compared with the conventional band-pass filter wideband input matching methodology,the number of inductors is saved by the resistive feedback complementary amplifying topology presented.The output impendence matching network utilized is very simple but efficient at the cost of only one inductor.The measured S_(22) far exceeds that of similar work.The PA is designed and fabricated with TSMC 0...     

A 10-bit 100 MSamples/s BiCMOS D/A Converter

This paper presents a 10-bit Digital-to-Analogue Converter (DAC) based on the current steering principle. The DAC is processed in a 0.8µm BiCMOS process and is designed to operate at a sampling rate of 100MSamples/s. The DAC is intended for applications using direct digital synthesis, and focus has been set on reducing dynamic nonlinearities to achieve a high spurious free dynamic range (SFDR) at high generated frequencies. The main part of the DAC consists of a matrix of current cells. Each current cell contains an emitter-coupled logic (ECL) flip-flop, clocked by a global ECL clock to ensure accurate clocking. A bipolar differential pair, with a cascode CMOS current sink, steered by the differential output of the ECL flip-flop, is used in each current cell to steer the current. The DAC operates at 5V, and has a power consumption of approximately 650mW. The area of the chip-core is 2.2mm × 2.2mm. The measured integral nonlinearity (INL) and differential nonlinearity (DNL) are both approximately 2 LSB. At a generated frequency of f _g0.1 f _s(f _s = 100MSamples/s) the measured SFDR is 50dB, and at f _g0.3 f _s the measured SFDR is as high as 43dB. The DAC is operating up to a sampling frequency of approximately 140MSamples/s. The DAC uses the hierarchical switching scheme and therefore the dynamic performance is not described well using the conventional glitch energy. A new energy measure that replaces the conventional glitch energy is therefore proposed. This energy measure is especially useful during the design phase.     

X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001)

The structure and crystal quality of epitaxial films of SiC/AlN/6H-SiC(0001) prepared by chemical vapor deposition were evaluated by high resolution transmission electron microscopy (HRTEM) and x-ray diffraction techniques. Cross-sectional HRTEM revealed an abrupt AlN layer-6H-SiC substrate junction, but the transition between the AlN and SiC layers was much rougher, leading to the formation of a highly disordered SiC region adjacent to the interface. The AlN layer was relatively defect free, while the SiC layer contained many microtwins and stacking faults originating at the top SiC/AlN interface. The SiC layer was the 3C-polytype, as determined by double crystal x-ray rocking curves. The SiC layers were under in-plane compressive stress, with calculated defect density between 2–4×10⁷ defects/cm⁻².     

Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures

Symmetric δ-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties that approach those of MBE grown AlGaAs structures. The 300 and 77K carrier concentrations for the InGaP PHEMT were 2.72 and 2.56 × 10¹² cm^{2 −2} and the mobilities were 5,920 and 22,000 cm^{2 2}/V.s. These excellent values suggest that problems associated with switching the anion at the channel heterojunction have been overcome. The corresponding values for the AlGaAs PHEMT were 2.51 and 2.19 × 10¹² cm^{2 −2} and 6,500 and 20,400 cm²/V.s. The uniformity in the indium concentration in the InGaAs layer as determined by photoluminescence, photoreflection, double crystal x-ray diffraction, and Rutherford backscattering was found to be good, but the percent In in the AlGaAs pseudo-morphic high electron mobility transistor (PHEMT) was less than that in the InGaP PHEMT even though the programmed values were the same. The uniformity in the doping distribution as determined by secondary ion mass spectroscopy and electrochemical capacitance-voltage measurements was found to be good, but it decreased with distance from the center of the susceptor. Also, most of the dopants in the δ-doped InGaP and AlGaAs layers were activated.     

Sharing and Compatibility Study between Fixed Service Using High Altitude Platform Stations (HAPS) and Other Services in the 31/28 GHz Bands

In the World Radiocommunication Conference 2000 (WRC-2000), use of the 31 GHzand 28 GHz bands was permitted for the fixed service (FS) by using highaltitude platform stations (HAPS) in some countries. This paper examines thesharing and compatibility of the HAPS-based FS with the other services usingthe same and adjacent frequency bands and establishes the conditions of thecoexistence with those services. Feasibility of dynamic channel assignment(DCA) scheme among the different communication systems to facilitate thecoexistence is also studied.     

高效率GaAs/InGaAsHFET功率放大器

研制成 Ga As/ In Ga As异质结功率 FET(HFET) ,该器件是在常规的高 -低 -高分布 Ga As MESFET的基础上 ,在有源层的尾部引入 i-In Ga As层。采用 HFET研制的两级 C波功率放大器 ,在 5 .0～ 5 .5 GHz带内 ,当Vds=5 .5 V时 ,输出功率大于 3 2 .3 1 d Bm(0 .1 77W/ mm ) ,功率增益大于 1 9.3 d B,功率附加效率 (PAE)大于3 8.7% ,PAE最大达到 49.4% ,该放大器在 Vds=9.0 V时 ,输出功率大于 3 6.65 d Bm(0 .48W/ mm) ,功率增益大于 2 1 .6d B,PAE典型值 3 5 %     

高折射率聚合物/纳米粒子激光雕刻材料的制备

为了提高双光子聚合立体光雕微结构的应用性,需要提高雕刻材料的折射率。TiO2粒子具有很高的折射率,通过向光敏聚合物中加入TiO2粒子,制成了聚合物/纳米粒子复合材料,有效地提高了雕刻材料的折射率。聚合物/纳米粒子复合材料的透过率和吸收率图显示,这种材料适合进行双光子聚合雕刻。     

Wideband to narrowband/dual band characteristics of monopole antenna using frequency selective surfaces

A monopole antenna having desirable transmission characteristics with high gain is proposed. The monopole antenna comprises 45° tilted square shaped patch and modified rectangular metallic ground plane on FR4 dielectric substrate. The proposed monopole antenna operates from 2.6 GHz to 9.7 GHz with maximum peak gain of 2.3 dBi. Now, a dual-layer aperture-type FSS is designed having a passband from 5.9 GHz to 9.2 GHz and incorporated with the proposed monopole antenna. Thus, the combination only covers the selective frequency band from 5.5 GHz to 8.7 GHz with a stable gain of around 5 dBi. Second, another FSS is designed, which has one stop-band from 4.1 GHz to 5.4 GHz and two passbands on the both sides of this stop-band. This combination does not work from 4.1 GHz to 5.5 GHz but covers dual band from 2.48 GHz to 3.3 GHz with a peak gain of 5 dBi and 5.5 GHz to 10 GHz with a peak gain of 5.5 dBi. Therefore, without modifying the antenna design, any tunable transmission band can be achieved by the proposed combination. The proposed antenna and FSS combination structure may be suitable for military wireless applications for its band selection characteristics.     

Thermal stability of Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure and its improvement by phosphidization

A drastic decrease in the sheet carrier concentration of modulation-doped Al_0.48In_0.52As/Ga_0.47In_0.53As/InP heterostructures has been observed after O₂ plasma treatment followed by thermal treatment up to 350°C. The decrease in sheet carrier concentration, which is speculated to be caused by both plasma damage and impurities penetrating from the surface of the epilayer, can be suppressed substantially by using PH₃ plasma treatment prior to the O₂ plasma and thermal treatments.     

一种基于DSP的高精度轴角模拟器

介绍了一种新型轴角模拟器的设计与实现,该仪器基于单片机与DSP控制,构建20位高精度数字一正余弦转换电路、电子式宽频宽压SCOTY变压器电路等硬件电路,完成了可编程设置等软件功能,实现了高精度、宽频率、宽电压的轴角信号的模拟。该仪器具有双通道、速比可编程功能,可实现激磁信号的电压和频率、轴角信号的类型和电压的叫编程设置。经测试,仪器的单通道精度〈0．0050．分辨率高达0．0003°,可广泛应用于高精度的轴角转换控制系统。     

高Al组分In1-xAlx Sb/InSb的MBE生长研究

高Al(10%~15%)组分的In1-xAlx Sb层可作为势垒层以抑制隧穿暗电流、提高器件工作温度而显得很重要。采用分子束外延的方法对InSb(100)衬底高Al组分的In1-xAlx Sb/InSb外延生长进行了实验探索,确定出了Al组分(约12.5%)并讨论了Al组分梯度递变的In1-xAlx Sb缓冲层和生长温度对外延薄膜质量的影响。