一个Ku波段高功率密度AlGaN/GaN HEMTs单片集成功率放大器

本文报道了一款工作于Ku波段的高功率密度单片集成功率放大器。该放大器采用金属有机化学气相淀积技术在2英寸半绝缘 4H-SiC衬底上生长0.2um AlGaN/GaN HEMTs工艺制作而成。在10%占空比的脉冲偏置Vds=25V,Vgs=-4V条件下,该单片放大器在12-14GHz频率范围内得到最大输出功率38dBm(6.3W),最高PAE 24.2%和线性增益6.4到7.5dB。以这种功率水平而论,该放大器的功率密度超过5W/mm。     

A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE

正We report a high power Ku band internally matched power amplifier(IMPA) with high power added efficiency(PAE) using 0.3μm AlGaN/GaN high electron mobility transistors(HEMTs) on 6H-SiC substrate.The internal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm.To improve the bandwidth of the amplifier,a T type pre-matching network is used at the input and output circuits,respectively.After optimization by a three-dimensional electromagnetic(3D-EM) simulator,the amplifier demonstrates a maximum output power of 42.5 dBm(17.8 W),PAE of 30%to 36.4%and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10%duty cycle pulse condition when operated at V_(ds) = 30 V and V_(gs)=—4 V.At such a power level and PAE,the amplifier exhibits a power density of 4.45 W/mm.     

具有平坦增益的X波段GaN单片功率放大器

A flat gain two-stage MMIC power amplifier with a 2.8 GHz bandwidth is successfully developed for X band frequency application based on a fully integrated micro-strip Al Ga N/Ga N HEMT technology on a semiinsulating Si C substrate. Designed with a binary-cluster matching structure integrated with RC networks and LRC networks, the developed power MMIC gets a very flat small signal gain of 15 d B with a gain ripple of 0.35 d B over 9.1–11.9 GHz at the drain bias of 20 V. These RC networks are very easy to improve the stability of used Ga N HEMTs with tolerance to the MMIC technology. Inside the frequency range of 9–11.2 GHz where the measurement system calibrated, the amplifier delivers a pulsed output power of 39 d Bm and an associated power added efficiency of about 20% at 28 V without saturation, as the available RF power is limited.     

GaN HEMT工艺的X波段发射前端多功能MMIC

采用0.25 μm GaN HEMT 工艺,研制了一款X 波段发射前端多功能MMIC,片上集成了一个单刀双掷(SPDT)开关和一个功率放大器电路。其中SPDT 开关采用对称的两路双器件并联结构,功率放大器采用三级放大拓扑结构设计,电路采用电抗匹配方式兼顾输出功率和效率。测试结果表明,在8～12 GHz 频带内,芯片发射通道饱和输出功率为38.6～40.2 dBm,功率附加效率为29%～34.5%,其中开关插入损耗约为0.8 dB,隔离度优于-45dB。该芯片面积为4 mm×2.1 mm。     

工作在1.8-3 GHz内的高效率GaAs pHEMT功率单片

本文报道了一款基于南京电子器件研究所GaAs pHEMT单片集成电路工艺的S波段宽带高效率功率放大器。为了提高芯片效率,该放大器采用驱动比为1:8的两级级联方式,并采用低通/高通滤波器相结合的拓扑结构设计每级的匹配电路。这种匹配电路在有效降低芯片面积的同时,在较宽的频带范围内实现对应于高效率的阻抗匹配。在5V漏压AB类偏置条件下,该功率放大器在1.8到3GHz频率范围内连续波输出饱和功率为33~34 dBm,相应的附加效率达到35%~45%,以及非常平坦的功率增益25~26 dB。芯片面积紧凑,尺寸仅为2.7mm×2.75mm。     

E波段3.5 W GaN宽带高功率放大器MMIC

基于自主开发的100 nm GaN高电子迁移率晶体管(HEMT)工艺,研制了一款工作频段覆盖E波段(60～90 GHz)的宽带高功率放大器芯片.放大器采用密集通孔结构的共源极晶体管,降低寄生效应,提高器件的高频增益.同时采用三级级联拓扑结构,结合紧凑的微带线宽带匹配电路,在60～92 GHz频率范围内,典型线性增益达到...     

Ku波段内匹配高功率且PAE超过30%的GaN HEMTs放大器

本文报道了一款工作于Ku波段的高功率高效率的内匹配功率放大器。该放大器采用外延于6H-SiC衬底上的栅长为0.3um、栅宽为4mm的 AlGaN/GaN 高电子迁移率晶体管制作而成。为了改善电路的带宽,在输入输出匹配电路中分别采用了T型 预匹配网络。通过使用三维电磁仿真工具优化无源匹配网络,该放大器在Vds=30V、Vgs=-4V,占空比为10%的脉冲偏置下,获得了在13.8~14.3GHz的频率范围内最大输出功率为42.5dBm、功率附加效率为30%~36.4%以及线性增益为7~9.3dB的性能。以这样的功率和效率而言,该放大器功率密度达到4.45W/mm。     

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_ds = 25 V and V_gs = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.