用吸收光谱和共振拉曼光谱研究水溶卟啉Cu（NACN）与DNA相互作用

本文用紫外一可见光谱和共振拉曼交谱发水溶金属卟啉４－Ｎ－乙腈基一吡啶基铜卟啉与ＤＮＡ的相互作用。分析表明，Ｃｕ（ＮＡＣＮ）以光沟槽方式与ＤＷＡ作用；与ＤＮＡ作用后，Ｃｕ（ＮＡＣＮ）的吡啶基团向垂直于卟啉环平面方向转过一个小的角度；在４４５ｎｍ的脉冲激光激发下，Ｃｕ（ＮＡＣＮ）与ＤＮＡ形成激发态复合物，而且Ｃｕ（ＮＡＣＮ）的激发态分子比基态分子现ＤＮＡ作用强。     

用SEM改装成的电子束光刻线宽10nm及套刻精度不足50nm的器件图形

用ＳＥＭ改装成的电子束光刻线宽１０ｎｍ及套刻精度不足５０ｎｍ的器件图形美国明尼苏达大学电子工程系的Ｐ．Ｂ．Ｆｉｓｃｈｅｒ和Ｓ．Ｙ．Ｃｈｏｕ等人利用一台ＪＥ－ＯＩＬ－８４０Ａ型扫描电镜（ＳＥＭ）改装成一台电子束直接光刻系统，采用Ｎｉ／Ａｕ剥离工艺，在大...     

Eu~（3＋）－N~1－（对－异硫氰基苄基）－DTTA标记抗CEA McAb C＿（17）

Ｅｕ￣（３＋）－Ｎ￣１－（对－异硫氰基苄基）－ＤＴＴＡ标记抗ＣＥＡＭｃＡｂＣ＿（１７）赵启仁，张福华，刘洁，林汉，李美佳，庄湘莲，陈艾，胡壁（中国医学科学院放射医学研究所，天津，３００１９２）ＴＲＩＦＭＡ中，制备比活性高、免疫活性高的Ｅｕ３＋标记抗体...     

复合物p—C6H4F2...NH3（ND3）外部振动的共振双光子电离光谱

利用共振光电离技术和飞行时间质谱技术,观察到了复合物ｐ－Ｃ６Ｈ４Ｆ２．．．ＮＨ３（ＮＤ３）的共振双光子电离光谱。光谱分析表明,复合物分子间的伸 振动频率为８６．４ｃｍ＾－１;由复合物光解离机理以及伸缩模的失谐参数与键有的关系。获得了复合物电子激发态Ｓ１和基态Ｓ０的键能信息。Ａｂｉｎｉｔｉｏ计算表明,ｐ－Ｃ６Ｈ４Ｆ２．．．ＮＨ３（ＮＤ）复合物的几何结构是：ＮＨ３分子中的Ｎ原子位于垂直ｐ－Ｃ６Ｈ４Ｆ２     

复合物p-C_6H_4F_2…NH_3(ND_3)外部振动的共振双光子电离光谱

利用共振光电离技术和飞行时间质谱技术,观察到了复合物 ｐ－Ｃ_６Ｈ_４Ｆ_２…ＮＨ_３（ＮＤ_３） 的共振双光子电离光谱．光谱分析表明。复合物分子间的伸缩振动频率为 ８６．４ ｃｍ~（－１）;由复合物的 光解离机理以及伸缩模的失谐参数与键能的关系,获得了复合物电子激发态 Ｓ_１和基态 Ｓ_０的键能 信息．Ａｂ ｉｎｉｔｉｏ　计算表明,ｐ－Ｃ_６Ｈ_４Ｆ_５…ＮＨ_３（ＮＤ_３）复合物的几何结构是：ＮＨ_３分子中的 Ｎ 原子位于垂直于ｐ－Ｃ_６Ｈ_４Ｆ_２分子环面的对称轴（Ｚ轴）上,距环面的高度为 ０．３５２ｎｍ; ＮＨ_３的 Ｃ_３轴与ｐ－Ｃ_６Ｈ_４Ｆ_２的对称轴夹角是 ５２．５°;且一个氢原子朝向环面; ＮＨ_３可绕 Ｐ－Ｃ_６Ｈ_４Ｆ_２分子 的Ｚ轴近似的自由转动．键能计算值和预计存在的内转动与实验吻合．     

Au／AuGeNi／n—GaAs欧姆接触失效机理的研究

对Ａｕ／ＡｕＧｅＮｉ／ｎ－ＧａＡｓ欧姆接触进行了三种不同的应力试验：（１）高温存储（ＨＴＳ），（２）常温大电流（ＨＣ）。（３）高温适当电流。试验结果表明，三种试验均造成了试验后期欧姆接触电阻增大，最后导致欧姆接触失效，ＡＥＳ分析表明，试验后的样品发生了Ｎｉ，Ａｕ和ＧａＡｓ的互扩散。     

Au／AuGeNi／n—GaAs欧姆接触失效机理的研究

本文对Ａｕ／ＡｕＧｅＮｉ／ｎ－ＧａＡｓ欧姆接触进行了三种不同的应力试验：（１）高温存储（ＨＴＳ），（２）常温大电流（ＨＣ），（３）高温适当电流。试验结果表明，三种试验均造成了实验后期欧姆接触电阻增大，最后导致欧姆接触失效。ＡＥＳ分析表明，试验后的样品发生了Ｎｉ，Ａｕ和ＧａＡｓ的互扩散。     

Au／AuGeNi／n－GaAs欧姆接触失效机理的研究

本文对Ａｕ／ＡｕＧｅＮｉ／ｎ－ＧａＡｓ欧姆接触进行了三种不同的应力试验：（１）高温存储（ＨＴＳ），（２）常温大电流（ＨＣ），（３）高温适当电流。试验结果表明，三种试验均造成了实验后期欧姆接触电阻增大，最后导致欧姆接触失效。ＡＥＳ分析表明，试验后的样品发生了Ｎｉ，Ａｕ和ＧａＡｓ的互扩散。     

双束共蒸发制备Fe－Cu包埋团簇

基于气体聚集（ＧＡ）形成团簇的过程，利用双束蒸发共沉积方法，在室温下成功地制备了Ｆｅ－Ｃｕ纳米磁性包埋团簇样品。对样品的ＴＥＭ／ＥＤ分析表明，平均直径为２０ｎｍ左右的Ｆｅ团簇被Ｃｕ原子所包裹，形成了以Ｆｅ团簇为芯，Ｃｕ原子为壳的良好的芯－壳式包埋结构。     

Au／AuGeNi／n－GaAs欧姆接触失效机理的研究

对Ａｕ／ＡｕＧｅＮｉ／ｎ－ＧａＡｓ欧姆接触进行了三种不同的应力试验：（１）高温存储（ＨＴＳ），（２）常温大电流（ＨＣ），（３）高温适当电流。试验结果表明，三种试验均造成了试验后期欧姆接触电阻增大，最后导致欧姆接触失效。ＡＥＳ分析表明，试验后的样品发生了Ｎｉ、Ａｎ和ＧａＡｓ的互扩散。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.