基于DSP+Builder线性相位滤波器组格型设计与实现

分析了线性相位完全重构滤波器组(LPPRF)的分析滤波器和综合滤波器,研究了一种线性相位滤波器组设计方法,格型结构。通过求解滤波器组的Lattice系数,进行了两通道线性相位完全重构滤波器组的格型结构设计。提出一种设计方案,利用DSP Builder技术,将Matlab/simulink设计工具和QuartusⅡ设计工具结合起来,实现有限冲激响应格型滤波器组.并以一个高阶低通FIR格型滤波器组的实现为例,设计并完成软硬件仿真与验证。结果表明,该方法简单易行,能满足设计要求。     

FIR数字滤波器的简化格型实现

格型滤波器在数值计算性能和结构的模块化等方面都优于直接型,但实现起来较复杂。本文提出一种实现PIR数字滤波器的简化格型结构,它所需的硬件设备量只有常规格型实现时的一半,与直接型实现时相当。文中给出了从直接型到简化格型的综合算法。并对线性相位FIR数字滤波器的格型综合算法作了简化。用实例演示了本文的主要结论。     

一种最优去噪线性相位滤波器组的FPGA实现

格型结构是一种可以快速高效设计过采样线性相位完全重建滤波器组的方法。一旦分析滤波器组设定后,对应的综合滤波器结构也就确定,但综合滤波器组参数却有很大的灵活性,从中可以找出具有最优去噪效果的综合滤波器组,构成一个完整的滤波器组。对于求解出的具有最优去噪效果的过采样线性相位完全重构滤波器组,文中用DSP Builder在FPGA上予以实现,并用modelsim进行功能仿真。     

布喇格反射型宽带单晶薄膜体声波滤波器

该文研究了一种新型布喇格反射型薄膜体声波（BAW）滤波器的设计方法与制备技术。BAW器件选择机电耦合系数较大的Y43° 铌酸锂（Y43° LN)单晶薄膜作为压电层材料,并以苯并环丁烯（BCB）作为晶圆键合层,采用离子注入剥离法将亚微米厚度的Y43° LN单晶薄膜转移至具有布喇格反射层的衬底。BCB既作为键合层,也作为布喇格反射层的第一低声阻抗层,实现了单晶BAW滤波器的制备。设计并制备了三阶BAW滤波器,中心频率为2.93 GHz,绝对带宽和分数带宽分别为247 MHz和8.4%。结果表明,采用薄膜转移技术制备的高机电耦合系数LN单晶薄膜能够实现大带宽BAW滤波器的制备。     

格型结构滤波器设计

近几年来,随着科技的发展,电子通信事业也蓬勃向前,但随之带来的信号干扰、稳定性差、难以控制等问题也亟待解决。格型数字滤波器凭借其独特的结构及优良的特性,被认为是解决此类问题的理想滤波器。本文首先对格型滤波器的结构特点做了简要介绍,对格型滤波器的结构优点进行说明。进而引出自适应格型滤波器算法和LMS算法及相关算法的基本原理。利用此原理设计一个二阶格型滤波器,并在MATLAB环境下完成了仿真工作。     

基于快速MVR-CORDIC算法的格型IIR滤波器

文章提出一种基于MVR-CORDIC算法的格型IIR滤波器结构。采用MVR-CORDIC算法来改进格型IIR滤波器结构中的Givens旋转模块,使改进的滤波器在SQNR性能不变的情况下,比采用常规CORDIC算法的格型IIR滤波器节省约70%的面积,速度提高60%左右,改进后的格型IIR滤波器更适合于高速实时信号处理领域。     

微型蓝牙LTCC平衡滤波器的设计与研究

提出一种基于低温共烧陶瓷(LTCC)技术实现的小型化平衡滤波器。该平衡滤波器频率范围为2.4～2.5GHz,可广泛应用于蓝牙通讯系统。在设计时利用垂直通孔互连工艺技术将滤波器和巴伦进行互连,并且集成在一个模块中,其中,蓝牙滤波器的设计采用半集总结构,Marchand巴伦采用独特的螺旋线宽边耦合带状线结构(SBCS),极大地缩小了巴伦尺寸。实现了具有阻抗变换功能的蓝牙波段微型平衡滤波器,其尺寸仅为2.5mm×2.0mm×1.2mm。测试结果表明,该平衡滤波器带内差损小于1.8dB,相位不平衡度小于±6°,均满足设计指标要求。     

一种基于遗传算法的混合滤波器组设计方法

针对可满足近似完全重构的双通道混合滤波器组,其中高阶数的模拟滤波器一般不容易设计优化。采用遗传算法设计5阶模拟分解滤波器,并基于逆快速傅里叶变换实现数字综合滤波器的设计优化以滤除掉镜像频谱,保证近似完全重构。文中设计了由5阶模拟分解滤波器和32阶数字综合滤波器组成的混合滤波器组,仿真结果表明:可以实现的最大失真误差为4.761 8×10-11dB,平均失真误差为-9.2×10-14dB,最大混叠误差为-154 dB,平均混叠误差为-200 dB,可满足24 bits的模数转换器系统的要求。     

一种红外海面小目标检测算法的ASIC结构实现

文章基于一种用于红外图像小目标检测的多级滤波算法,提出其硬件实现结构。该结构选用统一的1×3模板,通过改变滤波器的级连数目得到不同大小的滤波模板,从而检测不同大小的小目标。数据路径包含三个并行的数据通道,采用流水线形式对数据进行处理,分别检测1×1～1×3、1×4～1×5和1×6～1×7的目标。这种结构可以对输入的红外图像进行实时处理。     

新型高速CSD编码滤波器及VLSl的实现

通过对BOOTH型乘法器、高速加法器结构和CSD编码滤波器结构的深入研究,开发出一种新型高速CSD编码滤波器结构.采用此结构实现了正交幅度调制器中的一个高速反SINC滤波器,并在ALCATEL 0.35μm CMOS工艺实现.芯片规模7500门,面积1.00mm×0.42mm.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.