ZrO2-Ti系材料的热力学分析与显微结构研究

通过热力学数据的预报与计算,对ＺｒＯ２－Ｔｉ体系的相间热力学稳定性进行了分析,并确定了材料民折和学条件。在此基础上常压烧结合不同组分配比的ＺｒＯ２－Ｔｉ系复合材料,并采用ＸＲＤ,ＳＥＭ,ＴＥＭ等方法对材料的显微结构进行了表征,ＺｒＯ２－Ｔｉ系均质复合材料由α－Ｔｉ相,四方ＺｒＯ２相和少量的单斜ＺｒＯ２相组成,ＸＲＤ和ＴＥＭ分析表明,组元Ｔｉ、ＺｒＯ２之间没有发生明显的化学反应,上有良好的化学相窝性     

ZrO2-Ti系材料的热力学分析与显微结构研究

通过热力学数据的预报与计算,对ＺｒＯ_２－Ｔｉ体系的相间热力学稳定性进行了分析,并确定了材料合成的热力学条件．在此基础上常压烧结合成了不同组分配比的ＺｒＯ_２－Ｔｉ系复合材料,并采用ＸＲＤ、ＳＥＭ、ＴＥＭ等方法对材料的显微结构进行了表征．ＺｒＯ_２－Ｔｉ系均质复合材料由α－Ｔｉ相,四方ＺｒＯ_２相和少量的单斜ＺｒＯ_２相组成．ＸＲＤ和ＴＥＭ分析表明,组元Ｔｉ和ＺｒＯ_２之间没有发生明显的化学反应,具有良好的化学相容性．     

TiO2-SiO2复合半导体气凝胶制备及光催化活性研究

ＴｉＯ２－ＳｉＯ２复合半导体气交是一种新型纳米光催化氧化剂。本文以正硅酸乙酯、钛酸丁酯为原料,用溶胶－凝胶法经超临界干燥制备出了ＴｉＯ２－ＳｉＯ２复合半导体气凝胶。研究了ＴｉＯ２：ＳｉＯ２不同配比对溶胶－凝胶过程的影响;用ＢＥＴ、ＸＲＤ、ＳＥＭ、ＴＥＭ等测试方法对其结构进行了表征;以苯酚为探针考察了ＴｉＯ２－ＳｉＯ２复合半导体气凝胶的光催化氧化活性,并与普通锐钛矿型钛白粉光催化剂进行了对比结果表明     

流态化CVD制备TiO2—Al2O3复合粒子

本文探讨了流态化ＣＶＤ反应器中Ｔｉ（ＯＣ４Ｈ９）４水解制备ＴｉＯ２－Ａｌ２Ｏ３复合粒子新工艺，借助于ＳＥＭ、ＴＥＭ、ＢＥＴ、ＸＲＦ和ＥＰＭＡ等现代测试手段研究了复合粒子结构和包覆过程特征。结果表明，在流态化ＣＶＤ反应器中Ａｌ２Ｏ３超细颗粒以团聚体形式存在，ＴｉＯ２包覆量随Ｔｉ（ＯＣ４Ｈ９）４进料浓度升高而增加，但反应温度影响不大；在包覆过程中，同时存在成核和成膜，成核包覆使复合粒子比表面积增加，成     

流态化CVD制备TiO_2－Al_2O_3复合粒子

本文探讨了流态化ＣＶＤ反应器中Ｔｉ（ＯＣ４Ｈ９）４水解制备ＴｉＯ２－Ａｌ２Ｏ３复合粒子新工艺，借助于ＳＥＭ、ＴＥＭ、ＢＥＴ、ＸＲＦ和ＥＰＭＡ等现代测试手段研究了复合粒子结构和包覆过程特征．结果表明，在流态化ＣＶＤ反应器中Ａｌ２Ｏ３超细颗粒以团聚体形式存在，ＴｉＯ２包覆量随Ｔｉ（ＯＣ４Ｈ９）４进料浓度升高而增加，但反应温度影响不大；在包覆过程中，同时存在成核和成膜，成核包覆使复合粒子比表面积增加，成膜包覆使复合粒子比表面积减小．     

PZT—NiTi铁电—铁弹多层膜的制备及表征

用溶胶－凝胶法制备了ＰＺＴ压电薄膜,研制了Ａｕ／ＰＺＴ／ＰＴ／ＴｉＯ２／ＮｉＴｉ／Ｓｉ（１００）多层膜结构,用ＸＲＤ,ＡＦＭ,ＴＥＭ－ＥＤＸ和ＳＡＤ技术考察了薄膜的表面形貌,相结构演化,以及面的元素分布特性。结果表明：ＰＺＴ膜与ＮｉＴｉ合金膜的结合良好,稳定;ＰＴ层的引入,使无定型ＰＺＴ薄膜在５５０℃退火后,转变为钙钛矿结构,降低了晶化温度,并有效地抑制焦碌石相的形成;ＮｉＴｉ薄膜结晶良好;ＴｉＯ     

等离子喷涂陶瓷涂层透射电镜样品的制备方法

介绍了在４５＃碳钢上等离子喷涂ＮｉＣｒＡｌ粘结层与Ａｌ２Ｏ３＋１３ｗｔ％ＴｉＯ２陶瓷涂层界面研究的ＴＥＭ样品制备方法。ＳＥＭ和ＴＥＭ初步研究结果表明，陶瓷呈层状结构，片层间除存在完全接触区外，同时存在非接触区、金属粘结层－陶瓷涂层界面具有一定的厚度。     

不同热化学还原LiNbO3∶Ti或Mn晶体杂质电荷态和点缺陷

采用光学吸收和电子顺磁共振（ＥＳＲ）技术表征不同热化学还原ＬｉＮｂＯ３∶Ｔｉ，Ｍｎ（ＬＮ∶Ｔｉ，Ｍｎ）和纯的Ｌｉ／Ｎｂ＝０．９４５一致熔化ＬｉＮｂＯ３（ＬＮ）晶体的热力学还原习性。将ＬＮ∶Ｔｉ（厚度为１ｍｍ）样品放在Ｌｉ２ＣＯ３中、６００℃、保温７ｈ，产生６９０ｎｍ（～１．８ｅＶ，Ｔ＝６７％）和峰值靠近７８５ｎｍ（Ｔ＝７１％）的７７０～８１０ｎｍ光学吸收带，它们分别对应于Ｔｉ＾３＋的＾２Ｔ→＾２Ｅ     

硬脂酸法制备纳米TiO_2及微结构控制

采用硬脂酸法制备了不同掺杂量的ＴｉＯ２纳米晶．通过ＦＴＩＲ、ＸＲＤ和ＴＥＭ等实验手段对所得纳米ＴｉＯ２进行分析和表征,并对反应历程进行了初步探讨．实验结果表明,利用硬脂酸法,金红石型ＴｉＯ２能在５００℃获得,掺杂Ｎａ＋和Ｋ＋后则得到锐钛矿型ＴｉＯ２,且随着掺杂量的增加,ＴｉＯ２的粒径减小．     

高取向锐钛矿TiO2薄膜的MOCVD法制备与表征

采用热壁低压ＭＯＣＶＤ方法，以Ｔｉ（ＯＣ４Ｈ９）４为源在ＳｉＯ２／Ｓｉ衬底上制备出高取向锐钛矿ＴｉＯ２薄膜。用Ｘ射线衍射技术研究了沉积温度和衬底对薄膜的结构和相组成的影响规律，采用ＸＰＳ和ＳＥＭ分别研究了薄膜的组成和形貌，结果表明，当沉积温度为５００＾０Ｃ和６００＾０Ｃ时，薄膜为锐钛矿结构，３００＾０Ｃ和４００＾０Ｃ地，薄膜以无定形结构为主，薄膜的组成为ＴｉＯ２，衬底影响薄膜的相组成，不同沉积温度     

Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates

In this paper, the electrical, structural and optical properties of indium tin oxide (ITO) films deposited on soda lime glass (SLG) haven been investigated, along with high strain point glass (HSPG) substrate, through radio frequency magnetron sputtering using a ceramic target (In₂O₃:SnO₂, 90:10 wt.%). The ITO films deposited on the SLG show a high electrical resistivity and structural defects compared with those deposited on HSPG due to the Na ions from the SLG diffusing to the ITO film by annealing. However, these properties can be improved by intercalating a barrier layer of SiO₂ or Al₂O₃ between the ITO film and the SLG substrate. SIMS analysis has confirmed that the barrier layer inhibits the Na ion's diffusion from the SLG. In particular, the ITO films deposited on the Al₂O₃ barrier layer, show better properties than those deposited on the SiO₂ barrier layer.     

电场对Au/SiO_2及Au-Ag/SiO_2表面结构与原子迁移特性的影响

利用扫描俄歇微探针（SAM）和原子力显微镜（AFM）研究了SiO2衬底上在外加直流电场作用下沉积的Au薄膜及Au－Ag复层薄膜的表面形貌、结构变化及电迁移扩散行为。结果表明：①在衬底表面施加水平方向电场辅助沉积制备的Au薄膜其表面显示出平整的椭球形晶粒，并沿外电场方向呈织构取向。与未加电场的热蒸发沉积膜相比，具有较为均匀、有序的表面微观结构。②SiO2表面Au-Ag复层薄膜在直流电场作用下，Au，Ag物种同时向负极方向作走向迁移扩散，这与Au－Ag复层薄膜在Si（111）表面电迁移时Au，Ag分别向两极扩散的特点不同，反映了衬底性质对表面原子电迁移的影响。③Au－Ag复膜在电迁移过程中还发生了表面原子聚集状态的变化，原来沉积排布的细小晶粒在电迁移扩散过程中出现不均匀长大，导致薄膜表面粗糙度显著增加。     

Depth distribution of ion-implanted argon in gadolinium and samarium films

The development of a model and theoretically evaluated distributions for impurities injected by ion bombardment into growing films are given. The influence of ion range distribution function, diffusion, impurity-defect interaction and film and substrate material differences upon the impurity concentration profiles is investigated. The possibility of uniform impurity distribution in the main part of the film with a sharp concentration gradient into the substrate is shown. The influence of diffusion leads to a decrease of gaseous impurity concentration in the film and penetration of impurities into the substrate; the relation of impurity diffusion coefficients and the segregation coefficient value is essential when the film and the substrate are made of different materials. Taking into account the trapping of impurities by defects we found that the distribution of the ‘free’ (mobile) impurities is inhomogeneous with a maximum near the growth boundary, this inhomogeneity is decreased with increased diffusion, while defect concentration increases. The concentration profiles of the trapped impurities (impurity-defect complexes) are very different, the complexes become distributed more homogeneously and the concentration of complexes increases as diffusion and the defect concentration increase.By use of secondary ion mass-spectrometry (SIMS) a distribution of ion-implanted argon through the film and part of the substrate depth was investigated as well as the distribution of the film and substrate materials themselves, using gadolinium and samarium films obtained by vacuum condensation on (100) molybdenum monocrystal under simultaneous 100 and 600 eV argon irradiation. The argon distribution through the film is found to be almost uniform with an exponential decrease in the substrate for gadolinium films at an energy of 100 eV. A considerable argon accumulation at the film-substrate boundary is found at an energy of 600 eV. For samarium films at an energy of 100 eV an anomalous argon and samarium penetration into the substrate as well as argon penetration into the layer deposited without irradiation of the film is obtained.     

The bending of silicon wafers by thin polycrystalline silicon film deposition and by film doping using boron diffusion

The existence of stress at the interface between a monocrystalline silicon substrate and a thin (under 1 μm) polycrystalline silicon film was demonstrated using X-ray topography. The wafer-bending direction was studied for a polycrystalline film doped by boron prediffusion and by prediffusion followed by drive-in diffusion. Wafer bending in the presence of SiO₂ thermal growth between the monocrystalline substrate and the polycrystalline film was also investigated. The causes of the wafer bending and its change during polycrystalline film doping are discussed.     

Heat diffusion in normal4He and3He thin films

We report measurements of heat diffusion at the surface of a glass substrate coated by normal⁴He and³He thin films. As the normal Helium film is grown, we observe for both isotopes that the diffusion of heat is strongly altered. Clearly a new diffusive channel is associated to the presence of the normal film itself, and for an³He film thickness of 7a.l. two distinct characteristic diffusion times are measured. The shorter time is characteristic of the diffusion of heat in the bare substrate while the longer one is associated to the diffusive process taking place in the normal adsorbed film. Considering the two diffusive channels as independent, we are able to obtain the diffusive contribution of the normal He film. The analysis of these data leads us to propose the picture of phonons traveling in the film with a wavevector parallel to the substrate plane. The existence of this independent diffusive mode, with a characteristic time larger than that of the substrate, is supported by the very slow decrease at long times of the measured temperature deviation for the coated substrate.     

Substrate-dependent optical absorption characteristics of titanium dioxide thin films

We used the electron-beam evaporation method in various oxygen partial pressure environments to deposit TiO(2) thin films on various glass substrates at 300 degrees C. We found the threshold oxygen partial pressures above which the film is transparent are different for films on various substrates. Below the threshold oxygen partial pressure, the refractive index and the extinction coefficient of the films varied from substrate to substrate. The films on substrates with higher threshold oxygen partial pressure were associated with a higher extinction coefficient and a higher growth rate. These phenomena are correlated with the appearance of rutile phase in the anatase phase, which is also correlated with variations in the Al(2)O(3) and Na(2)O content in the substrates. The Al(2)O(3) content in the substrate tends to enhance the formation of rutile phase in the film and to give a higher extinction coefficient for the film, while the Na(2)O content in the substrate tends to retard the rutile formation in the film and to give a lower extinction coefficient for the film.     

A study of the dynamic properties of photo-induced charge carriers at nanoporous TiO(2)/conductive substrate interfaces by the transient photovoltage technique

Two interfaces with opposite orientations of the built-in electric field, nanoporous TiO(2)?film/ FTO electrode and nanoporous TiO(2) film/semitransparent Pt substrate, were constructed. The separation and transport of photo-induced charge carriers in the two systems of nanoporous TiO(2)/conductive substrate were studied by the transient photovoltage technique. Various transient photovoltage responses were obtained when the laser beam was incident from the surface of the nanoporous TiO(2) film (top illumination) or the TiO(2)/substrate interface (bottom illumination). A linear and a logarithmic dependence of the photovoltage amplitude on the excitation level were observed for top illumination and bottom illumination, respectively. The results indicate that diffusion is the major way for the separation of charge carriers in the nanoporous TiO(2) film and that the excess carriers were separated by drift under the built-in electric field at the TiO(2)/substrate interfaces.     

Effect of N<Subscript>2</Subscript> gas annealing and SiO<Subscript>2</Subscript> barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO<Subscript>2</Subscript> conducting film

During the fabrication process of transparent conducting thin films of ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the SiO₂ buffer layer formed on the substrate and N₂ annealing treatment were investigated quantitatively. The deposited ATO thin film was identified as a crystalline SnO₂ phase and the film thickness was about 100 nm/layer at a withdrawal speed of 50 mm/min. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film that was deposited on SiO₂ buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84% and 5.0 × 10^–3cm, respectively. The XPS analysis confirmed that a SiO₂ buffer layer inhibited Na ion diffusion from the substrate, preventing the formation of a secondary phase such as Na₂SnO₃ and SnO and increasing Sb ion concentration and ratio of Sb⁵⁺/Sb³⁺ in the film. It was found that N₂ annealing treatment leads to the reduction of Sn⁴⁺ as well as Sb⁵⁺, however the reduction of Sn⁴⁺ is more effective, and consequently results in a decrease in the electrical resistivity to produce excellent electrical properties in the film. © Springer Science + Business Media, Inc.     

Ti/A1N快速退火界面反应的实验研究

在电子封装用的A1N陶瓷多晶衬底上生长250nm的Ti膜，并进行快速退火。用RBS（卢瑟福背散射）、AES（俄歇电子能谱）、SIMS（二次离子质谱）和XRD（X射线衍射）等实验技术对界面反应进行了分析研究，用划痕实验测量了退火对Ti／A1N界面粘附力的影响。实验结果表明：快速退火时，Ti，A1，N以及A1N中掺杂的O均发生明显的界面扩散和界面反应。样品表面的O和A1N衬底中掺杂的O都向Ti膜中扩散，在较低的退火温度下生成TiO2；在较高的退火温度下与扩散到Ti膜中的A1反应，在Ti膜中间形成Al2O3层。N向Ti中扩散，并与Ti反应生成TiN。在薄膜和衬底之间有Ti的氧化物生成。粘附力的测量结果表明：在较低的温度下进行快速退火可以明显提高Ti／A1N界面的强度，在较高的温度下，界面强度有所下降。     

Fabrication of CIGS solar cells with a Na-doped Molayer on a Na-free substrate

The photovoltaic properties of CIGS cells on an alumina substrate were improved through the use of Na-doped Mo as the bottom layer of a Mo back contact. Na was supplied to the CIGS bulk region from an alumina/Na-doped Mo/Mo structure, similar to the Na diffusion from soda-lime glass. The diffusion of Na from the Na-doped Mo was controlled effectively compared to that from Soda-lime glass (SLG). The present results indicate that Na-doped Mo acts as a Na source material and that the Na amount can be controlled by adjustment of thickness of Na-doped Mo layer, without the use of an alkali barrier layer. The highest conversion efficiency of 13.34% (J_sc = 34.62 mA/cm², V_oc = 0.58 V and FF = 66%) for an active area of 0.45 cm² on an alumina substrate was obtained for 100 nm Na-doped Mo/1000 nm Mo.