大功率二极管泵浦固体激光器

介绍了近几年来，大功率DPSSL的研究状部况，对各种新出现的DPSSL的核心部件-二极管泵浦头的设计结构作了简要的描述、分析。     

美国固体激光雷达技术新进展

1引言由于固体激光器工作物质的不均匀性和热效应，输出的光束质量较差。又由于工作物质本身的问题，其工作波长范围窄。此外，使用灯泵浦其效率低、不可靠以及散热等问题，使其难以高重复频率工作。这些都影响了固体激光器的性能，限制了固体激光雷达在成像和测速等方面的应用。80年代后期固体激光器取得了关键性的技术突破，在二极管泵浦，高平均功率和宽带可调谐三个方面取得了重要进展。二极管泵浦固体激光器（DPSSL）的主要优点是大大提高了效率和可靠性，克服热效应缺点，并使器件向小型化发展。由于二极管激光可与工作物质的TEM0…     

光纤激光器相关的薄膜设计

文章介绍了两种应用于光纤激光器的薄膜类型，分别为长波通和短波通截止滤光膜。光纤激光器用薄膜的显著特点，就是在具有较高的激光损伤阈值的同时，又能把近波长的光线按照光谱特性要求分离，这其中就包括泵浦光波长（980nm）和信号光波长（1050～1100nm）。     

大功率半导体激光器模块散热结构的数值优化

考虑大功率半导体激光bar外延结构中GaAs衬底热阻导致p、n面散热的非对称性,利用商用有限元软件Ansys对目前常用的DPSSL侧泵浦源亚封装子模块的散热性能进行了分析和结构优化,并根据优化结构实际制备出3 bar激光线阵泵浦源,其连续输出功率超过120 W,中心波长为807.7 nm,光谱宽度(FWHM)为2.8 nm.该数值分析结果对根据实际需要设计、封装出不同结构尺寸的大功率半导体激光泵浦源模块具有现实的指导意义.     

我国中低功率LD泵浦全固体激光器的研制与开发

指出了半导体激光二极管泵浦全固体激光器（DPSSL）的广阔市场前景和逐步占主导地位的发展趋势。着重介绍了我国科研院所及企业研制和开发中低功率DPSSL的进展情况,对以长春光机所、清华大学和山西大学等研究单位为代表的科研水平,以长春新产业、温州丰源和上海冠威等企业为代表的产品开发作了综合评述,最后对我国研制和开发中低功率DPSSL过程中存在的问题和产业化方向提出了一些意见和建议。     

二极管泵浦固体激光器迈向大功率金属处理

近年来二极管泵浦固体激光器(DPSSL)在低功率(<20W)固体激光器市场已经确立了牢固的地位.由于泵浦二极管的价格已经降低,同时显示出其许多优越性——小型化,功率稳定性,光束质量,节省运行成本,因此低功率市场已经打开.在诸如半导体处理,激光打标,眼科,仪器等应用中,DPSSL已经确立了坚实的地位并正在变成主导激光光源.     

端面泵浦Nd:YAG连续输出1052nm波长激光器

设计了一个简单紧凑的1052nm波长激光器.首次利用激光二极管（LD）端面泵浦Nd：YAG晶体,使用镀有高度选择性介质膜的反射镜产生该波段的激光.激光阈值为0.3W,当808nm波长泵浦光功率达到18W时产生了3.5W的1052nm波长激光输出.光-光转换效率为20%,输出激光功率波动不超过3%.     

端面泵浦Nd∶YAG连续输出1052nm波长激光器

设计了一个简单紧凑的1052nm波长激光器。首次利用激光二极管(LD)端面泵浦Nd∶YAG晶体,使用镀有高度选择性介质膜的反射镜产生该波段的激光。激光阈值为0. 3W, 当808nm波长泵浦光功率达到18W时产生了3. 5W的1052nm波长激光输出。光- 光转换效率为20% ,输出激光功率波动不超过3%。     

DPSSL激光器的高精度温控电路设计与实现

针对温度变化对于DPSSL激光器工作波长及稳定性的影响问题,提出了一种基于TEC和专用控制芯片LTC1923的温控方案,设计了温控电路及其保护电路,实现了DPSSL工作温度的精确控制。首先分析了DPSSL温控指标需求和TEC热电制冷原理,阐述了温控系统组成及原理;然后详细介绍了温控电路及其保护电路的设计,讨论了防电磁干扰措施及注意事项;最后针对某型DPSSL激光器负载,测试了温控系统的稳态误差、超调量等指标;实验数据显示,该温控系统稳态误差小,控制精度达±0.01℃,能保证DPSSL高稳定性工作。     

制造第二代薄膜固体激光器的研制途径

制造第二代薄膜固体激光器的研制途径日本东北大学金属材料研究所与创立基础研究小组共同研究，采用分子束外延法成功地生长优质掺Ｅｒ’”的ＣａＦ。和ＥｒＦ。单晶薄膜（照片１），在世界上首次观察到由振荡波长８０８ｕｒｎ的ＧａＡｓ半导体激光泵浦产生波长５３８ｕｒ...     

Current Situation and Developing Trend of Optical Thin Films for DPSSL

1 Introduction Since the world first laser developed by Maiman[1] in 1960, the research activities in this field has never been stopped, scientists in this field all over the world have sought to build the most efficient, the most power- ful or the most unique gas- , dye- , semiconductor- or solid state laser. In recent years, along with the im- provement of high power semiconductor laser"s perfor- mance, the high power visible solid - state lasers pumped by laser diode have been developed rap…     

Structures for organic diode lasers and optical properties oforganic semiconductors under intense optical and electrical excitations

The challenges to realizing diode lasers based on thin films of organic semiconductors are primarily related to low charge carrier mobility in these materials. This not only limits the thickness of organic films to ⩽100 nm in electrically pumped devices, but it also leads to changes in the optical properties of organic films induced by the large number of carriers trapped in the materials subjected to an intense electrical excitation. We describe organic waveguide laser structures composed of thin organic films and transparent indium-tin-oxide electrodes. These waveguides allow for efficient injection of an electrical current into the organic layers and provide for low optical losses required in a laser. The changes in the optical properties of organic thin films induced by electrical excitation are studied using electroluminescence and pump and probe spectroscopy. Induced transparency and absorption observed in the organic materials may be related to triplet excitons or trapped charge carriers. Pump-induced absorption is also observed in organic films under quasi-CW optical excitation. These effects must be taken into account both in the design of organic diode laser structures and in the selection of charge transporting materials     

The study on mechanism of ultraviolet laser emission at room temperature from nanocrystal thin ZnO films grown on sapphire substrate by L-MBE

ZnO nanocrystal thin films were fabricated on sapphire substrates by laser molecular beam epitaxy. The structure and optical properties of the films were investigated experimentally. The film having small nanocrystal size of about 50-200 nm shows optically pumped ultraviolet laser emission at room temperature. This paper discussed the theoretical mechanism of excitonic radiative recombination in relation with the nanocrystal structure on ZnO film ultraviolet laser research. It is concluded that the experimental results are consistent with the theoretical analysis.     

Green-emitting organic vertical-cavity laser pumped by InGaN-based laser diode

An organic vertical-cavity surface-emitting laser is demonstrated, which is pumped by an InGaN-based blue laser diode. The vertical-cavity laser structure consists of a poly-N-vinylcarbazole film doped with Coumarin 540A and two Bragg reflectors made of TiO₂/SiO₂ quarter-wave thin films. By driving the pump laser diode with a pulse width of 3.5 ns, singlemode lasing was achieved at a wavelength of 540 nm for a threshold pump power of 137 mW/pulse.     

缺陷诱导光学薄膜光场增强损伤分析

高损伤阈值的光学薄膜是高功率激光系统的关键器件。众多研究显示,纳米量级的缺陷是光学薄膜激光损伤的主要诱因,是制约光学薄膜向高损伤阈值发展的主要因素。基于有限差分时域方法分析了纳米大小的缺陷诱导SiO₂光学薄膜的局部光场增强导致的激光损伤。结果显示:缺陷的存在使SiO₂单层薄膜的光场分布发生了变化,无缺陷的SiO₂薄膜峰值光场位于膜层表面,而有缺陷的SiO₂薄膜峰值光场位于缺陷与薄膜的边界处,光场增强了约2.3倍;同时缺陷诱导的光场局部增强不仅依赖于缺陷与膜层之间的相对折射率,而且也依赖于缺陷的大小、缺陷在膜层中的分布深度,以及入射激光波长。缺陷与膜层的相对折射率越大,缺陷的直径越大,缺陷在膜层中的深度越小,入射激光波长越短,光场增强越大。研究结果显示光学薄膜中纳米大小的缺陷诱导的光场增强不可忽视,在研究光学薄膜的激光损伤过程中应予以考虑。     

Room Temperature Bolometric Applications Using Manganese Oxide Thin Films

We report the optical responses of magnetic manganese oxide La_2/3Ca_1/3MnO_δ thin films at room temperature. The voltage responses to a He-Ne laser at the wavelength of 0.63 μm and incident infrared (IR) power at the wavelength of 8-14 μm were measured. The measured signals were attributably to a bolometric response due to the heating of the sample by radiation. We report the optical responses in La_2/3Ca_1/3MnO_δ thin films as a function of chopping frequency and bias current. The noise behavior around room temperature was also discussed. It is suggested that perovskite manganese oxide thin films are suitable candidates for uncooled optical detectors.     

二氧化钒薄膜在激光防护上的应用研究

战场上激光武器的不断发展对激光防护提出了更高的要求。由于VO2薄膜的相变温度接近室温,具有良好的光电性能,成为相变材料中最有希望用于红外探测器的激光防护材料。介绍了VO2薄膜的光电特性,并探讨了其在激光防护应用方面的相关问题以及发展前景。     

酞菁染料薄膜的光存贮特性

本文研究了酞菁分子结构与光存贮性能的关系，给出作用在酞菁薄膜上的激光功率和辐照时间，其阈值随酞菁分子侧链的增长而增加的特性。     

氧化锌薄膜的电化学沉积法制备及受激发射研究

采用一种简单的电化学沉积法，在三电极化学池中，以单一的硝酸锌水溶液作为电沉积液，制备了高光学质量的半导体ZnO薄膜。透射光谱测量表明其光学带隙为3．35eV，400～2000nm波段的光学透过率大于80％。X射线衍射(XRD)和原子力显微镜(AFM)研究表明，ZnO薄膜为纤锌矿结构的无序多晶颗粒膜，微晶尺寸小于250nm。当用355nm的皮秒脉冲激光作为抽运源垂直入射薄膜表面时，可以检测到400nm附近的近紫外受激发射光，其强度随入射强度呈超线性增长关系，阈值在196．8kW／cm^2处，并且激光发射是多模的和各个方向的，还与被激发的面积有关，表现为随机激光发射机制。     

畅言光电技术发展 四海学人聚首北京——记1992年国际激光与光电子会议

本文概述了1992年10月在北京举行的1992国际激光与光电子会议。