功率因数校正功率模块及其应用

本文介绍了ＡＰＴ公司生产的ＡＰＴ５０１２ＪＮＵ２型和ＩＸＹＳ公司推出的ＶＵＭ２４－０５Ｎ及ＶＵＭ３３－０５Ｎ型专用功率模块。该类模块适用于ＰＦＣ升压电路中，可从单相交流供电线路中传输１．５ＫＷ到４．５ＫＷ的功率。     

ErYb：氟氧化物玻璃在966nm激光激发下的能量“扩散—传递”上转 …

频率上转换的研究是光物理学科的热点前沿课题．本文研究的是 Ｅｒ（１ｍｏｌ％） Ｙｂ（１０ ｍｏｌ％）共掺的 ＳｉＯ２－ＡｌＯ１．５－ＰｂＦ２－ＣｄＦ２氟氧化物玻璃（ＥｒＹｂ：ＹＯＧ）样品的直接上转换敏化发光机制． 首先测量了在激光焦点ａ处和较大光斑位置ｂ处的上转换发光,发现有丰富的上转换荧光．其中较强的有（６６５．５ ｎｍ, ６５３．５ｎｍ）,（５４９．０ ｎｍ, ５４２．５ ｎｍ）和（５２１．５ ｎｍ, ５２７．０ ｎｍ）三条荧光线,容易指认出它们依次分别是４Ｆ９／２－４Ｉ１５／２,４Ｓ３／２－４Ｉ１５／…     

全耗尽CMOS／SIMOX器件研制

在表层硅厚度为１８０ｕｍ的ＳＩＭＯＸ材料上，用局部增强氧化隔离等工艺研制了沟道长度为２．５μｍ的全耗尽ＣＭＯＳ／ＳＩＭＯＸ器件。该工艺对边缘漏电的抑制及全耗尽结构对背沟漏电的抑制降低了器件的整体漏电水平，使ＰＭＣＯＳ和ＮＭＯＳ的漏电分别达到３．Ｏ×１０－１１Ａ／μｍ和２．２×１０－１０Ａ／μｍ。５Ｖ时，例相器的平均延迟时间达６ｎｓ。     

高开关比（I_（on）／I_（off））a－Si TFT

本文报道了采用倒置交错结构（Ｔａ／（Ｔａ２Ｏ５）ＳｉＮｘ／ｉｎ＋ａ－Ｓｉ／Ａ１）的ＴＥＴ矩阵研究结果．其关态电流（Ｉ_ｏｆｆ（－５Ｖ））在５—７×１０￣－１４Ａ（对Ｗ／Ｌ＝１０），开态电流Ｉ_ｏｎ（Ｚ０Ｖ）大于１０μＡ，Ｉ_ｏｎ／Ｉｏｆｆ在１０８量级，场效应迁移率可达０．７９ｃｍ２／Ｖ．ｓ．     

短沟道CMOS／SIMOX器件及电路的辐照特性研究

利用薄膜全耗尽ＣＭＯＳ／ＳＯＩ工艺成功地研制了沟道长度为１．０μｍ的薄膜抗辐照ＳＩＭＯＸＭＯＳＦＥＴ、ＣＭＯＳ／ＳＩＭＯＸ反相器和环振电路，Ｎ和ＰＭＯＳＦＥＴ在辐照剂量分别为３ｘ１０５ｒａｄ（Ｓｉ）和７ｘ１０５ｒａｄ（Ｓｉ）时的阈值电压漂移均小于１Ｖ，１９级ＣＭＯＳ／ＳＩＭＯＸ环振经过５ｘ１０５ｒａｄ（Ｓｉ）剂量的电离辐照后仍能正常工作，其门延迟时间由辐照前的２３７ｐｓ变为３２８ｐｓ。     

非晶硅X－射线探测阵列的研究

研制出ａ－Ｓｉ：Ｈｐｉｎ型Ｘ－射线间接探测线阵，它探测的是Ｘ－射线在闪光体（Ｃｓｌ）所激发的荧光，制备出单元面积分别为２．５×２．５ｍｍ２、１．６×１．６ｍｍ２和１００×１００μｍ２的１６、２５、３２０单元的线阵．器件的暗电流达到１e－１２Ａ／ｍｍ２（－１０ｍＶ），光灵敏度～０．３５μＡ／μＷ（６００ｎｍ）．本文报道了Ｘ－射线探测阵列的制备及测试结果．     

切割曝光技术及其在器件研究上的应用

本文描述了一种微电子工艺制造中的切割曝光技术,用这一技术在一台Ｇ线投影曝光机上制备出深亚微米图形．由此进一步研制成功０．２５μｍＰ＋多晶硅栅表面沟ＰＭＯＳＦＥＴ,它具有良好的器件特性和抵制短沟道效应的能力．对不同沟长ＮＭＯＳ和ＰＭＯＳＦＥＴ的研究表明,当沟道长度从２．０μｍ降至０．５μｍ时,表面沟ＰＭＯＳ管阈值电压的变化（ΔＶＴ）约为６０ｍＶ,而ＮＭＯＳ管相应ΔＶＴ为１１０ｍＶ．计算机模拟的切割曝光和单线曝光立体图象也清楚地表明,切割曝光方法对于消除二次谐波影响,提高分辨率具有一定作用．     

双多晶硅栅SOI MOS器件的研究

采用多晶硅栅全耗尽ＣＭＯＳ／ＳＩＭＯＸ工艺成功研制出多晶硅栅器件,其中Ｎ＋栅ＮＭＯＳ管的阈值电压为０．４５Ｖ,Ｐ＋栅ＰＭＯＳ管的阈值电压为－０．２２Ｖ,在１Ｖ和５Ｖ电源电压下多晶硅栅环振电路的单级门延迟时间分别为１．７ｎｓ和３５０ｐｓ,双多晶硅栅ＳＯＩ技术将是低压集成电路的一种较好选择。     

超薄SiO_2膜电子隧穿及低场传输电流的温度关系

在Ｎ－Ｓｉ〈１００〉衬底制作了１０ｎｍ超薄ＳｉＯ２作介质膜的ＭＯＳ结构．研究了温度从１００～４５０Ｋ电子从Ｓｉ界面积累层Ｆ－Ｎ隧穿超薄ＳｉＯ２的Ｉ－Ｖ特性及低场传输电流随温度的变化关系．研究结果表明：在较低的温度下，电流与温度基本无关；而在较高的温度下，电流随温度指数增加．为从理论上解释这些实验结果，认为在Ｆ－Ｎ隧穿电场范围，电流密度Ｊ１∝Ｆ２ｅｘｐ（－β／Ｆ），而在低场范围电流Ｊ＝Ｊ０＋Ｊ２，Ｊ２∝Ｆｅｘｐ（－Φ２／ｋＴ）．Ｊ０为低场漏电流．Ｊ１从实验数据可以求出，电子从Ｎ型Ｓｉ〈１００〉隧穿超薄ＳｉＯ     

一种新的用于高速波分复用系统的色散补偿方案

本文提出了一种用于高速多路波分复用（ＷＤＭ）陆上级联掺铒光纤放大器（ＥＤＦＡ）光纤通信系统的色散补偿方案，其特点是：利用特殊设计的色散位移光纤ＳＤＤＳＦ（零色散波长λ０≈１．６μｍ，色散斜率Ｓ＿０＝０．０５ｐｓ／ｋｍ／ｎｍ２），在１５５０ｎｍ处产生－２～－４ｐｓ／ｋｍ／ｎｍ的色散，以避免ＩＴＵ－ＴＧ．６５３色散位移光纤在多路复用时的四波混频（ＦＷＭ）效应；并利用ＩＴＵ－ＴＧ．６５２标准单模光纤（非色散位移光纤ＮＤＳＦ）在１５３０～１５７０ｎｍ（ＥＤＦＡ工作带宽）范围内，有效地补偿ＳＤＤＳＦ所引入的负色散。此方案可使单路数据率高于１０Ｇｂ／ｓ的波分复用系统，经１０００ｋｍ传输后因色散引入的眼图恶化量仍＜１ｄＢ。     

Electronic properties of zinc oxide thin films prepared by RF magnetron sputtering for varistor applications

ZnO thin films for varistor applications have been prepared by RF magnetron sputtering at a power of 0-1 kW using an argon pressure of 05 Pa. The films were polycrystalline with mean grain size typically 13 nm, and were preferentially oriented in the [002] direction. Optical absorption studies revealed a fundamental absorption edge at a wavelength of approximately 360 nm with a direct bandgap of 3.36 eV. van der Pauw measurements showed a decrease in resistivity from approximately 12ωm at thickness 50 nm to 0-5 ωm at thickness greater than 500 nm. Below 350 K the resistivity was essentially constant, while at higher temperatures an activation energy of approximately 0-2eV was observed, which was attributed to the effects of oxygen vacancies.     

Hole traps in natural type IIb diamond

Hole traps in natural type IIb diamond have been characterized with Schottky diodes using thermal and optical techniques. The Schottky diode capacitance variation with time was used to determine the detrapping rate of holes. For reverse-biased Schottky diodes the rate was found to be independent of both electric field from 0 to 3.6×10⁵ V cm^-1, and temperature from -25 to 102°C. Optical radiation below 1.4 eV (>890 nm) has no measurable effect on the detrapping rate, while the rate increases with decreasing wavelength below 870 nm, We speculate that the traps are caused by impurities, possibly nitrogen aggregates, distributed over an energy range 1.4-4 eV above the valence band     

Molecular weight and processing effects on the dissolution properties of thin poly(methyl methacrylate) films

An experimental set-up based on multiwavelength interferometry, is applied in order to study in-situ the dissolution process of thin resist films. The interference function was the basis for a fitting algorithm, which analyses the experimental data and evaluates the progress of the resist thickness with time. The dissolution of various PMMA molecular weights (15 K, 350 K, 996 K) and resist thicknesses (20-300 nm), in various developers, consisting of mixtures of methyl iso butyl ketone (MIBK), iso propanol (IPA), H₂O at various relative concentrations, was studied. Surface dissolution inhibition was shown in unexposed resists with high molecular weights and increased thickness in the case of MIBK-IPA 1-1 and IPA-H₂O 7-3 developers. After that the whole dissolution process evolved at a steady rate. Dissolution of thick films proved to be unpredictable showing complex dissolution curves. Low molecular weight resists presented a smooth dissolution curve without dissolution inhibition. Samples exposed with small DUV doses, exhibited dissolution behavior similar to the unexposed cases, whereas high exposure doses, within the lithographically useful range, led to smooth dissolution behavior. In the case of MIBK-IPA 1-3 developer significant swelling was observed.     

Injection electroluminescence in metal-semiconductor tunnel diodes

Injection electroluminescence has been studied in metal-semiconductor (MS) and in metal-insulator-semiconductor (MIS) tunnel diodes. The diodes were fabricated from degenerately doped p-type ZnTe. Bandgap recombination radiation has been observed at 293°K, 77°K and 4°K. The linewidth narrows from approximately 120 Å at 293°K to approximately 60 Å at temperatures below 77°K. External efficiencies of 10⁻⁴ to 10⁻⁶ have been observed. For current densities below 10³ A/cm² the light output increases as the fourth or fifth power of the current density. For current densities greater than 10³ A/cm² the light varies linearly or slightly sublinearly with current density. A new model for the emission from MS tunnel diodes is proposed which accounts for the observation that light emission occurs when the semiconductor is negatively biased. No evidence of stimulated emission has been observed up to current densities of 10⁴ A/cm².     

13nm投影光刻用激光等离子体软X射线源

软X射线投影光刻能够制作出特征线宽小于0．1μm的线条。激光等离子作源的研究是软X射线投影光刻中几项关键技术之一。本文报道了13nm投影光刻用激光等离子体软X射线源。对Sn（Z＝50）靶的激光打靶条件进行初步优化，测定了其在10～20nm波段范围内的辐射相对强度分布。     

超短脉冲强激光场中氙的高次谐波

在静态气室中,利用线偏振的掺钛蓝宝石(Ti:sapphire)超短脉冲激光(中心波长795nm,脉宽105fs,重复频率10Hz,单脉冲能量50mJ),获得氙气中5～17次(40～160nm)谐波的软X射线激光辐射。实验中着重观察了高次谐波谱线强度随激光强度的变化规律,由于激光强度已经接近甚至超过饱和,高次谐波谱相对强度随入射激光强度增加而增长到一定程度后开始下降,同时观察到介质的离子谱,证实了高次谐波谱的产生与离子辐射之间的转换关系。     

Electrical performance study of 25 nm Ω-FinFET under the influence of gamma radiation: A 3D simulation

In this research paper, a 3D process simulation of 25 nm n-channel Ω-FinFET and the effect of Gamma radiation on device characteristics have been studied. Device simulations are carried out under the influence of Gamma radiation under varying does conditions from 100 Krad (SiO₂) to 10 Mrad (SiO₂). Effects of Gamma radiation on the threshold voltage, transfer characteristics, drive current, off-state leakage current and subthreshold characteristics have been studied. Extracted parameters for virgin and irradiated devices have been compared in order to understand the degradation in the electrical characteristics of the Ω-FinFET under study. Simulation results under the low drain and high drain bias has been reported and discussed. It is found that Ω-FinFET delivers better performance under irradiation as compared with conventional single gate MOS structures. Ω-FinFET is shown to be significantly tolerant to gamma radiation upto dose of 5 Mrad (SiO₂). In addition, the influence of quantum effects on this nanoscale device is investigated in detail. Sentaurus simulation results obtained has been compared with the reported experimental data.     

Temperature effects on trigate SOI MOSFETs

Trigate silicon-on-insulator (SOI) MOSFETs have been measured in the 5-400 K temperature range. The device fin width and height is 45 and 82 nm, respectively, and the p-type doping concentration in the channel is 6/spl times/10/sup 17/ cm/sup -3/. The subthreshold slope varies linearly with temperature as predicted by fully depleted SOI MOS theory. The mobility is phonon limited for temperatures larger than 100 K, while it is limited by surface roughness below that temperature. The corner effect, in which the device corners have a lower threshold voltage than the top and sidewall Si/SiO/sub 2/ interfaces, shows up at temperatures lower than 150 K.     

Tunable coherent radiation in the soft X-ray and extremeultraviolet spectral regions

Undulator radiation, generated by relativistic electrons traversing a periodic magnet structure, can provide a continuously tunable source of very bright and partially coherent radiation in the extreme ultraviolet (EUV), soft X-ray (SXR), and X-ray regions of the electromagnetic spectrum. Typically, 1-10 W are radiated within a 1/N relative spectral bandwidth, where N is of order 100. Monochromators are frequently used to narrow the spectral bandwidth and increase the longitudinal coherence length, albeit with a more than proportionate loss of power. Pinhole spatial filtering is employed to provide spatially coherent radiation at a power level determined by the wavelength, electron beam, and undulator parameters. In this paper, experiments are described in which broadly tunable, spatially coherent power is generated at EUV and soft X-ray wavelengths extending from about 3 to 16 nm (80-430-eV photon energies). Spatially coherent power of order 10 μW is achieved in a relative spectral bandwidth of 9×10^-4, with 1.90-GeV electrons traversing an 8-cm period undulator of 55 periods. This radiation has been used in 13.4-nm interferometric tests that achieve an rms wavefront error (departure from sphericity) of λ_euv/330. These techniques scale in a straightforward manner to shorter soft X-ray wavelengths using 4-5-cm period undulators at 1.90 GeV and to X-ray wavelengths of order 0.1 nm using higher energy (6-8 GeV) electron beams at other facilities     

Extreme ultraviolet lithography

Current microlithography used in high-volume integrated circuit manufacturing employs some form of optical projection technology. The most advanced tools use deep-ultraviolet (DUV) radiation having a wavelength of 248 nm and are used to print 250-nm features. These tools will likely be extended for use at the 180-nm generation and perhaps below. New DUV tools using 193-nm radiation are actively under development and are expected to be used for 130-nm generation and perhaps even 100-nm generation. Extending these DUV optical projection tools for manufacturing in the 100-200-nm region will be paced by the development of new high numerical aperture imaging systems and highly complex phase shift masks. For future generations of integrated circuits with minimum feature sizes below 100 nm, 193-nm tools will have great difficulty meeting all manufacturing requirements. This paper describes an alternate optical approach, for sub-100-nm generations, based on extreme ultraviolet radiation at around 13 nm, called extreme ultraviolet lithography (EUVL). This approach uses a laser-produced plasma source of radiation, a reflective mask, and a 4× reduction all-reflective imaging system. The technology is currently in the engineering development phase for an alpha machine. This paper reviews its current status and describes the basic modules or building blocks of a generic EUVL exposure tool