硅-蓝宝石高温大量程压力传感器设计

介绍了一种硅-蓝宝石高温大量程压力传感器的设计,提出了采用小直径C型膜片的一体化结构,通过合理排布力敏电阻条位置,能够制作出高精度大量程压力传感器.采用该设计研制出了量程分别为60MPa和100MPa压力传感器,其工作温度范围为-50～350℃;满量程输出≥100mV;精度优于0.1%;迟滞与重复性均优于0.05%FS.     

硅基TPMS集成传感器研究

本文介绍了一种应用于轮胎压力监测系统(TPMS)的传感器芯片的设计与制作.该传感器芯片集成了压阻式压力传感器和单电阻结构的温度传感器,根据量程需要,硅杯膜的厚度与面积比比较大,所以高应力区向膜外扩展,通过改变桥臂电阻的摆放位置和形状,提高了传感器的灵敏度,并且通过采取高浓度注入电阻拐角区域,得到了较好的零点输出.     

一种航空配套微压传感器芯片设计及制备

针对航空领域微小压力测量需求,介绍了一种沟槽梁膜复合结构压力芯片的设计和制备方法。设计的压力芯片解决了传统硅压阻压力传感器灵敏度与线性度的固有矛盾,通过有限元分析可动膜片应力应变输出,并结合曲线拟合分析,提出了一种优化芯片可动膜片结构尺寸的设计方法。利用MEMS加工工艺,实现了沟槽梁膜双重应力集中结构压力芯片的制备。在量程0~1 psi范围内,传感器灵敏度30.9 mV/V/psi,非线性误差0.25%FS,综合精度0.34%FS,实现了灵敏度和线性度的同步提高,满足了飞行器高度、风洞测试等领域的微压测试需求。     

压阻式高温压力传感器温度补偿与信号调理设计与测试

设计制作了一种集成信号调理电路的高温压阻式压力传感器,包含倒装式的压敏敏片、无源电阻温度补偿电路和信号调理电路组成;压敏芯片的制作采用SOI材料和MEMS标准工艺,温度补偿和信号调理电路采用高温电子元件;试验表明,无源电阻温度补偿具有显著的效果;此外,采用了高温信号调理电路来提高传感器的输出灵敏度,通过温度补偿来降低输出灵敏度;与传统的经验算法相比,所提出的无源电阻温度补偿技术具有更小的温度漂移,在220℃条件下传感器输出灵敏度为4.93 mV/100 kPa,传感器灵敏度为总体测量精度为±2%FS;此外,由于柔性传感器的输出电压可调,因此不需要使用一般的电压转换器随动压力变送器,这大大降低了测试系统的成本,有望在恶劣环境下的压力测量中得到高度应用。     

微型光纤光栅土压力传感器量程及其过载能力分析研究

为定量分析压力传感器的测量量程及其过载能力,提出一种微型光纤光栅土压力传感器并构建其气压标定系统。对微型光纤光栅土压力传感器进行理论分析得其灵敏度为7.5 nm/MPa,测量量程可达1.06 MPa。而分析光纤光栅土压力传感器性能测试数据得:该传感器压力灵敏度为5.9 nm/MP,线性度为99.93%,可测量实际量程为225 kPa,过载能力上限值为300 kPa。研究结果可用于指导设计规定量程的光纤光栅土压力传感器,具备一定应用价值。     

全SiC结构高温压力传感器制备及测试

面向极端条件下原位压力测量技术的需求,设计了一种光纤法珀式碳化硅（SiC）高温压力传感器。采用全SiC真空法珀（F-P）腔结构,以最大限度发挥SiC材料优异的耐高温特性。通过用反应离子刻蚀和高温高压键合技术成功制备了全SiC式高温压力传感器,实现高温环境下的原位压力测量。实验结果表明,该传感器能够实现650℃高温环境下6 MPa的压力测量。650℃下传感器的光谱压力灵敏度达到4.05 nm/MPa,温度压力交叉灵敏度为1.09×10^-3MPa/℃。研究成果为面向高温环境下压力原位测量的传感器开发提供了思路。     

一种大量程压力传感器的结构优化设计与仿真分析

设计了一种大量程硅压阻式压力传感器,通过理论模型分析优化传感器结构尺寸,保证薄膜的线性变化和抗过载能力;并通过有限元建模分析可动薄膜位移及应力随压力变化关系,对结构进行优化设计;同时用有限元仿真验证理论分析的正确性.通过理论与仿真优化分析,提出了采用C型膜片一体化硅压阻式压力传感器结构,可动薄膜选用方膜边长为1000μm,厚度为50μm,实现0~2 MPa的压力测量.     

SOI高温压力传感器的研究

介绍了SOI压力传感器的制作工艺,并且通过有限元软件对传感器输出特性进行模拟,模拟结果与实际测得结果是相符的.对SOI压力传感器测量结果表明,当温度增加到220℃传感器仍然能保持很好线性.另外对SOI压力传感器和多晶硅压力传感器进行比较,发现单晶硅SOI高温压力传感器灵敏度比多晶硅高温压力传感器灵敏度有较大提高.     

微型高温压力传感器芯片设计分析与优化

基于弹性力学和板壳力学理论,分析了微型高温压力传感器圆形膜片的受力分布,为力敏电阻在应变膜上的布置提供依据;利用有限元分析方法,借助ANSYS仿真软件,对微型高温压力传感器应变膜进行了一系列的分析和计算机模拟,探讨了传感器圆形应变膜简化应力模型的合理性以及温度对应力差分布的影响,得到了直观可靠的结果,为微型高温压力传感器芯片设计和研发新颖的微型高温压力传感器芯片提供有力的依据.     

簧片式硅压力传感器的研制

介绍了采用簧片式硅弹性膜芯片研制成功的压力敏感元件和传感器，利用这种硅芯片已制得灵敏度和量程范围各不相同的性能优良的压力传感器。     

耐高压FBG压力传感器实验研究

为了提高光纤Bragg光栅（FBG）的压力灵敏度以实现油气井下高压传感的测量要求,设计了一种以薄壁筒为衬底外加保护套的耐高压FBG传感器。将FBG沿着弹性筒的轴向用高温胶固化在筒的内部。由于外界油压将引起弹性筒轴向压缩并传递到FBG上引起FBG波长的变化,测量FBG波长的变化即可得到外界压力的变化。理论得到传感器的压力响应灵敏度为-0．035nm／MPa;0-40MPa压力范围内压力实验测得传感器压力响应灵敏度为-0．0339nm／MPa,线性拟合度为0．9997,理论和实验符合得很好。结果表明：该传感器性能稳定,线性度和重复性好,可以用于油气井下高压的实时测量。     

Design of bossed silicon membranes for high sensitivity microphone applications

This paper deals with the design optimization of new high sensitivity microphones in silicon on insulator (SOI) technology for gas sensing applications. A novel geometry of bossed silicon membranes used as mechanical transducer has been studied by finite element modelling. Device fabrication is achieved from SOI substrates through deep backside anisotropic etching and shallow front side reactive ion etching to define a bossed sensing membrane with two reinforced areas. Thus, the influence of thin film stresses on the device performance is largely decreased. Polysilicon gauges are located on the reinforced areas to get a better linearity in pressure.     

一种新颖的布拉格光栅气体压力传感器的设计与实验

设计了一种将光纤光栅悬空固定结构的气体压力传感器,利用金属不锈钢菱形结构将波纹管中的压强转化成该菱形结构的应变,同时实现将菱形纵向分布的压力转化成菱形横向的应变,通过菱形结构应变直接被传递给光纤光栅,从而实现了测量波纹管内压强的目的。实验结果表明,在0～0.45 MPa范围内,光纤光栅中心波长的漂移与波纹管中的压强呈很好的线性关系,线性度可达0.99以上.在压力测量范围内,压力灵敏度系数达到1.360×10-3/MPa(相当于灵敏度2.111 nm/MPa)。     

Silicon pressure sensor with integrated bias stabilization and temperature compensation

A piezoresistive pressure sensor for relative or differential pressure applications has been developed. The use of a 10 μm thick bossed membrane provides high sensitivity (typically 3.3 μV/V Pa) in the low-pressure range (0–60 hPa). Adaptation of sensor fabrication to a triple-diffusion bipolar process by application of an electrochemical etch-stop at a diffused n-type layer on a p-substrate allows monolithic integration of two different conditioning circuits operating with battery voltages of 12 to 20 V. Both circuits provide bias stabilization and temperature compensation for temperatures between −30 and +90°C. Thus the possibility of sensor fabrication by using standard IC technologies is demonstrated.     

A novel capacitive pressure sensor and interface circuitry

A novel capacitive pressure sensor with the island-notch structure is introduced. Its theory model is established based on the structure theory of the plate capacitive pressure sensor. The relationships between the external pressure and capacitance of the capacitive pressure sensor with the island-notch structure are studied by using the method of the finite element analysis (FEA). The results show that the linearity of the capacitive pressure sensor with island-notch structure reached up 0.9941 in the linear measurement zone, the sensitivity reached up 0.0019 pF/kPa, and the measurement range of the capacitive pressure sensor is enlarged. Thus, the contradictory among measure sensitivity, linearity and measure range is effectively relieved in the capacitive pressure sensors with island-notch. In addition, the interface circuitry of the charge transfer is designed, and the performance of the interface circuitry is analyzed.     

A flexible PDMS capacitive tactile sensor with adjustable measurement range for plantar pressure measurement

A flexible capacitive tactile sensor with adjustable characteristics, i.e., measurement range and sensitivity, has been developed. The proposed sensor is designed for large pressure measurement; therefore, polydimethylsiloxane (PDMS) material is selected as the material of the dielectric layer between the parallel plate electrodes of the sensor. Since the elasticity of the PDMS material can be adjusted by the mixing ratio of PDMS pre-polymer and curing agent during formation, sensors in different measurement ranges, i.e., 240–1,000 and 400–3,000 kPa, and corresponding sensitivities, i.e., 2.24 and 0.28 %/MPa, were respectively constructed and demonstrated. These measurement ranges are suitable for most of the biomechanical applications, especially for plantar pressure measurement. Moreover, because the output of the sensor, i.e., capacitance, is highly influenced by the dimension of the sensor structure, each sensor consists of four independent capacitance elements. The output of each sensor is averaged by four capacitances for single force measurement. This could improve the measurement accuracy in practical situation. Also, linearity of the measurement response could be enhanced and it was shown by the R-squared values in two measurement ranges, i.e., 0.9751 and 0.9881, respectively. The proposed sensor is flexible and miniaturized and has the potential to be applied to biomechanical applications.     

基于强度解调的Fabry－Perot型光纤MEMS压力传感器

运用微机械系统加工技术制作了一种新型法布里-珀罗干涉型光纤微机电系统压力传感器,该传感器通过测量反射光谱的移动测量压力.运用多腔干涉原理对该传感器进行理论以及模拟分析得出,通过改变压力传感器的尺寸可较容易的调节压力线性测量范围和灵敏度.实验结果表明,在压力线性测量范围[0.1～1.0]MBa内,灵敏度可达到12.71 nm/MPa(光谱移动/压力).