变电运行故障处理维护技术分析

自从改革开放以来,我国电力事业的发展速度大大加快.时至今日,我国电力事业的发展已经趋于成熟,电网布置也遍布全国.电力系统的运行难免会出现一些变电运行故障,如何及时做好变电运行故障处理维护工作,这是对电力事业工作人员的考验.针对于此,本次研究尝试探讨了变电运行故障处理维护技术,本文分析了变电运行故障处理维护工作的作用,同时提出了变电运行故障处理维护的相关技术.在文章的最后,对本次研究进行总结.     

变电运行故障处理维护技术解析

随着日常生活中人们用电量的增多,我国电力事业的高速发展,变电运行故障的处理维护技术也应该相应的不断提高,进而高效的改善电力的运行的稳定性,从而更好的促进我国经济的高速发展.但是由于人们生活水平的不断提高社会经济的高速运转,人们对电力运行方面的要求也越来越高,这就要求供电公司在解决处理故障时能够迅速及时,进而不影响到生产生活.然而在实际生活中,由于电力系统故障往往比较复杂,不能够在短时间内解决,从而会影响电力运行的稳定性.所以,本文主要分析了变电运行故障处理维护技术,希望能够提高变电维护技术,从而更好的促进电力事业的发展.     

电力变电运行管理模式的创新

随着社会经济的快速发展和科学技术水平的不断提高,我国的电力事业也繁荣发展起来。在电力系统运行的过程中,变电运行的管理是十分重要的,但是在实际的电力运行管理工作进行的过程中,常常会出现一些故障,这些故障应该及时解决,不然很可能会为相关的电力系统的正常运行带来一定的阻碍。文章以电力变电运行为切入点,积极探索电力变电运行管理模式的创新。     

红外测温在变电运行设备过热故障检测的应用

随着我国经济的发展和社会的进步,我国的电力事业也得到了快速的发展,这也增加了变电运行设备过热故障产生的频率,现代红外诊断技术其实是以红外辐射为能量和信息传递的手段,通过红外热像仪对电力设备故障进行诊断是红外技术在变电运行中的重要应用。在电力系统中可应用于各种电气设备的外部过热故障、内部缺油或绝缘损坏故障的诊断,为设备状态检修提供了依据,保证了电力系统的安全运行和提高供电可靠性。     

复杂接线方式下变电运行技术的应用研究

随着社会生产力的进步,我国的电力事业也因此获得了巨大的发展空间,因此,电力事业在现代工业中也变得越来越重要,并且和国民整体的经济发展有着密不可分的关系.然而,在这种情况下,受到电力事业整体快速发展的催动,变电站在规模上也不断扩大,导致变电运行技术中有关接线的方式也越发复杂.因此,有关变电运行的安全性有了更加高标准的要求.因此,本文根据复杂接线方式下变电运行技术的应用必要性详细探究了变电运行技术的运用现在及其作用,并且提出了复杂接线方式在变电运行技术下的运用策略.     

电力变电运行故障分析与排除探讨

近年来,随着我国社会的不断发展,电力工程也取得了长足的进步,电力工程技术也在紧跟着时代的步伐迅速壮大,处于最佳的状态运行。目前,我国电力变电运行基本处在较为稳定的状态,但由于多种因素的干扰,也会不定时出现运行故障,严重影响了电力系统的稳定性。本文对目前电力变电运行的故障进行了全面分析和排除,进一步探索电力过程中可能出现的难题,并提出了相应的排除策略。     

变电运行的安全问题分析及故障排除

随着社会的发展,人们的生活水平不断提升,人对电力的需求量逐渐扩大,在一定程度上提高了对电力部门变电运行工作的要求。目前而言,我国的电力系统还处于进一步的发展和完善过程中,变电运行安全方面还有待加强与完善。文章以当前我国电力系统变电运行中存在的安全问题为出发点,进行了初步的探索,针对变电运行中安全问题提出相关的故障排除策略和建议。     

电力系统变电运行中的故障类型及处理办法

随着我国国民经济水平的提高及现代化水平的不断提高,国家对于电力的需求不断的增长,这也给我国的电力系统带来了巨大的压力和挑战。在电力系统的变电运行中常会遇到一些故障,这些故障都会给电力系统的运行带来巨大影响,也会严重影响到国民正常的生活生产。电力系统稳定的变电运行是保证国民能够正常使用电力的重要保证。电力系统变电运行中的故障类型较为复杂,如何及时处理运行过程中出现的故障十分重要。因此,加强对电力系统变电运行过程中出现的故障类型分析及处理方法的探讨和研究具有重要意义。本文对电力系统变电运行中出现的常见的故障进行一些简单的分析和处理方法探讨,以期帮助维持电力系统的稳定运行。     

变电运行的故障及处理措施

变电系统的安全、可靠、稳定运行对我国国民经济的发展和电力用户的正常生产生活具有重要影响。如果变电运行出现故障,会造成电力系统的安全性和稳定性缺乏保证。因此,必须对变电运行的故障进行分析和处理。通过工作经验和实践,提出并分析常见的变电运行故障,并采取针对性的措施对变电运行故障进行处理,以提高变电运行的安全性、可靠性和稳定性。     

变电运行中的事故分析和处理措施

随着人们生活水平的不断提升,用电量也呈现出连年增长的趋势,随之而来的,供电企业所面临的问题和挑战也逐渐增多.现阶段,我国供电系统出现的故障较多,这些故障的产生不仅为人们的日常生活带来了极大的不便,同时也为国家以及社会造成了不可弥补的经济损失,在一定程度上阻碍了我国电力事业持续稳定的发展.基于此,本文主要针对变电运行中的事故进行分析,并提出有效的处理措施,希望能为相关人员的工作提供一定的参考和借鉴.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.