二极管型非制冷红外探测器的前端电路设计

设计了一种二极管型非制冷红外探测器的前端电路,该电路采用Gm-C-OP积分放大器的结构,将探测器输出的微弱电压信号经跨导放大器(OTA)转化为电流信号,再经电容反馈跨阻放大器(CTIA)积分转化为电压信号输出。该OTA采用电流反馈型结构,可以获得比传统OTA更高的线性度和跨导值。输入采用差分结构,可以有效地消除环境温度及制造工艺对探测器输出信号的影响。电路采用0.35 m CMOS工艺进行设计并流片,5 V电源电压供电。Gm-C-OP积分放大器总面积0.012 6 mm2,当输入差分电压为0~5 mV时,测试结果表明:OTA跨导值与仿真结果保持一致,Gm-C-OP积分放大器可实现对动态输入差分信号到输出电压的线性转化,线性度达97%,输出范围大于2 V。     

一种超宽带伪差分跨导放大器

提出了一种超宽带伪差分运算跨导放大器.该放大器通过共模前馈和共模反馈方法使得运算跨导放大器单元具有更为简单的电路结构,易于设计验证并能够稳定工作在较高频率.以该放大器作为单元电路,可以实现截止频率到达百兆赫兹的高频连续时间滤波器,并作为中频滤波器用于射频接收机中.     

应用于中枢神经信号重建系统的跨导放大器

设计并实现了一种应用于中枢神经信号重建系统中的跨导放大器.采用前馈结构,有效地减小了输入失调电压,并提高了对共模信号的抑制能力,且电压输入范围允许自正电源电压至负电源电压.输出电流最高可达1mA.电路采用0.6μm CMOS工艺制造,面积0.6mm2.测试得到的电路跨导为0.38mS,输入失调电压为0.57mV,共模抑制比为-54dB,可满足中枢神经信号重建系统的要求.     

增益提高型套筒式全差分跨导放大器的设计与分析

提出了一种应用于流水线型模数转换器(ADC)的增益提高型套筒式全差分跨导放大器(OTA)的设计与分析方法.通过ADC的性能要求推导出OTA的设计指标.该设计中OTA的架构由主运放、增益辅助运放及共模反馈电路3部分子电路组成.设计采用SMIC CMOS 0.18mm工艺平台.该设计方法的实验结果表明:1pF负载下,跨导放大器.的直流增益达到145dB,单位增益带宽超过750MHz,相位裕度达到58°.闭环增益为4时,放大器在20ns内稳定到0.05%的精度.     

增益提高型套筒式全差分跨导放大器的设计与分析

提出了一种应用于流水线型模数转换器(ADC)的增益提高型套筒式全差分跨导放大器(OTA)的设计与分析方法.通过ADC的性能要求推导出OTA的设计指标.该设计中OTA的架构由主运放、增益辅助运放及共模反馈电路3部分子电路组成.设计采用SMIC CMOS 0.18mm工艺平台.该设计方法的实验结果表明:1pF负载下,跨导放大器.的直流增益达到145dB,单位增益带宽超过750MHz,相位裕度达到58°.闭环增益为4时,放大器在20ns内稳定到0.05%的精度.     

跨导放大器的设计考虑

2008年4月采用电压反馈放大器(VFA)来设计一个优质的电流到电压(跨导放大器)转换器是一项重大的挑战。理论上,一个光电二极管当曝露在光线中时可产生一个电流或电压输出,而跨导放大器(TIA)便是将这个很弱的电流转换成一个可用的电压信号,通常跨导放大器均需经过补偿才能正常工作。     

适用于高阶Sigma Delta调制器的全差分运算放大器的设计

比较了套筒式共源共栅、折叠式共源共栅和两级AB类输出的三种运算放大器结构,提出了一种可用于前馈型高阶Sigma Delta调制器的全差分跨导运算放大器.采用SIMC 0.18 μmCMOS工艺,完成了含共模反馈电路的两级AB类输出的跨导运算放大器的设计.利用Cadence/Spectre仿真器进行仿真,结果表明放大器的直流增益为62.19dB,单位增益带宽为205.56 MHz,相位裕度为70.81°,功耗仅为0.42 mW,适合于低压低功耗Sigma Delta调制器的应用.     

一种恒定跨导输入放大器

随着低电压系统的广泛应用和对性能要求的提高，要求输入跨导放大器具有宽输入电压动态范围。文章论述了一种较为简单的电路可以实现宽摆幅恒定跨导，包括主跨导放大器、负跨导放大器和求和电路。电路模拟证明这种简单结构具有很高的共模电压输入范围和很低的谐波失真。     

一种高共模抑制比恒定跨导运算放大器

介绍了一种基于电平位移技术实现恒定跨导的CMOS Rail-to-Rail运算放大器。该电路克服了一般运算放大器输入共模范围小的特点,输入级引入了电平位移电路,使运放在各种输入共模电压下的跨导几乎恒定。在此基础上,设计了一种具有高共模抑制比的恒定跨导运算放大器。该运算放大器具有Rail-to-Rail的输入、输出能力。整个电路采用Hynix 0.5μm CMOS工艺进行设计。     

下截止频率1.3～244Hz可调带通VGA设计

采用电压控制的伪电阻结构,设计了一款具有超低频下截止频率调节功能的带通可变增益放大器(VGA),由于该结构具有可调节超大的等效电阻和反馈电容使VGA的下截止频率可以调节.提出了一种改进的甲乙类运算跨导放大器(OTA)结构,采用新颖的浮动偏置设计,在满足高压摆率的条件下,有效提高共源共栅结构的电压输出范围.将伪电阻用于OTA的共模反馈,克服了阻性共模检测结构负载效应的问题.该VGA电路采用TSMC 0.18 μm标准工艺设计和流片,测试结果表明,1.2V电源电压下,其下截止频率调节范围为1.3～ 244 Hz,增益为49.2,44.2,39.2 dB,带宽为3.4,3.9,4.4 kHz,消耗电流为3.9 μA,共模抑制比达75.2 dB.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.